JP2006313913A - 有機薄膜トランジスタ表示板及びその製造方法 - Google Patents

有機薄膜トランジスタ表示板及びその製造方法 Download PDF

Info

Publication number
JP2006313913A
JP2006313913A JP2006129039A JP2006129039A JP2006313913A JP 2006313913 A JP2006313913 A JP 2006313913A JP 2006129039 A JP2006129039 A JP 2006129039A JP 2006129039 A JP2006129039 A JP 2006129039A JP 2006313913 A JP2006313913 A JP 2006313913A
Authority
JP
Japan
Prior art keywords
thin film
film transistor
transistor array
array panel
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006129039A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006313913A5 (https=
Inventor
Bo-Sung Kim
保 成 金
Woo Jae Lee
宇 宰 李
Munshaku Ko
洪 ▲ムン▼ 杓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006313913A publication Critical patent/JP2006313913A/ja
Publication of JP2006313913A5 publication Critical patent/JP2006313913A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30Devices controlled by radiation
    • H10K39/32Organic image sensors
    • AHUMAN NECESSITIES
    • A63SPORTS; GAMES; AMUSEMENTS
    • A63HTOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
    • A63H33/00Other toys
    • A63H33/04Building blocks, strips, or similar building parts
    • A63H33/046Building blocks, strips, or similar building parts comprising magnetic interaction means, e.g. holding together by magnetic attraction
    • AHUMAN NECESSITIES
    • A63SPORTS; GAMES; AMUSEMENTS
    • A63HTOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
    • A63H33/00Other toys
    • A63H33/04Building blocks, strips, or similar building parts
    • A63H33/10Building blocks, strips, or similar building parts to be assembled by means of additional non-adhesive elements
    • A63H33/108Building blocks, strips, or similar building parts to be assembled by means of additional non-adhesive elements with holes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65Light-sensitive field-effect devices, e.g. phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/125Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
JP2006129039A 2005-05-03 2006-05-08 有機薄膜トランジスタ表示板及びその製造方法 Pending JP2006313913A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050037082A KR101219035B1 (ko) 2005-05-03 2005-05-03 유기 박막 트랜지스터 표시판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
JP2006313913A true JP2006313913A (ja) 2006-11-16
JP2006313913A5 JP2006313913A5 (https=) 2009-06-04

Family

ID=36943764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006129039A Pending JP2006313913A (ja) 2005-05-03 2006-05-08 有機薄膜トランジスタ表示板及びその製造方法

Country Status (5)

Country Link
US (2) US20060197884A1 (https=)
JP (1) JP2006313913A (https=)
KR (1) KR101219035B1 (https=)
CN (1) CN100517744C (https=)
TW (1) TWI434446B (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008270744A (ja) * 2007-03-28 2008-11-06 Toppan Printing Co Ltd 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、およびアクティブマトリスクディスプレイ
JP2011071501A (ja) * 2009-08-24 2011-04-07 Ricoh Co Ltd 有機電子デバイスの製造方法および有機電子デバイス
KR20120094575A (ko) * 2011-02-17 2012-08-27 삼성전자주식회사 표시 기판 및 이의 제조 방법
JP2013531884A (ja) * 2010-05-28 2013-08-08 コーニング インコーポレイテッド 光活性有機材料を用いる強化半導体素子及びその作製方法
JP2014512108A (ja) * 2011-04-21 2014-05-19 シーピーアイ イノベーション サービシズ リミテッド トランジスタ

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070053060A (ko) * 2005-11-19 2007-05-23 삼성전자주식회사 표시장치와 이의 제조방법
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
KR101197059B1 (ko) * 2006-07-11 2012-11-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP2010040897A (ja) * 2008-08-07 2010-02-18 Sony Corp 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、および電子機器
KR20130011856A (ko) * 2011-07-22 2013-01-30 삼성디스플레이 주식회사 표시기판 및 그 제조방법
DE102011052583A1 (de) 2011-08-11 2013-02-14 Hella Kgaa Hueck & Co. Lichtmodul für eine Außenleuchte
KR101774491B1 (ko) 2011-10-14 2017-09-13 삼성전자주식회사 유기 포토다이오드를 포함하는 유기 픽셀, 이의 제조 방법, 및 상기 유기 픽셀을 포함하는 장치들
US9366905B2 (en) * 2011-12-05 2016-06-14 Shenzhen China Star Optoelectronics Technology Co., Ltd. Liquid crystal panel and manufacturing method for the same
US20140036188A1 (en) * 2012-08-01 2014-02-06 Cheng-Hung Chen Liquid Crystal Display Device, Array Substrate and Manufacturing Method Thereof
KR102027361B1 (ko) * 2013-02-13 2019-10-01 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법과 상기 박막 트랜지스터 표시판을 포함하는 전자 소자
CN103383946B (zh) * 2013-07-12 2016-05-25 京东方科技集团股份有限公司 一种阵列基板、显示装置及阵列基板的制备方法
GB2519081B (en) * 2013-10-08 2019-07-03 Flexenable Ltd Electronic devices including organic materials
CN104091886B (zh) * 2014-07-04 2016-11-23 京东方科技集团股份有限公司 一种有机薄膜晶体管、阵列基板及制备方法、显示装置
CN106876415B (zh) * 2017-03-20 2019-09-10 上海天马微电子有限公司 一种薄膜晶体管阵列基板及其制造方法
CN111725242B (zh) * 2020-06-30 2022-09-02 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
US12009369B2 (en) 2021-04-29 2024-06-11 Tcl China Star Optoelectronics Technology Co., Ltd. Display panel and display device
CN113193031B (zh) * 2021-04-29 2022-10-04 Tcl华星光电技术有限公司 显示面板和显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148483A (ja) * 1999-09-30 2001-05-29 Internatl Business Mach Corp <Ibm> フラット・パネル・ディスプレイ用の高性能薄膜トランジスタおよびアクティブ・マトリックス・プロセス
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法
JP2003202587A (ja) * 2001-12-28 2003-07-18 Sanyo Electric Co Ltd 表示装置及びその製造方法
US20040119073A1 (en) * 2002-12-20 2004-06-24 International Business Machines Corporation Synthesis and application of photosensitive pentacene precursor in organic thin film transistors
JP2004260057A (ja) * 2003-02-27 2004-09-16 Konica Minolta Holdings Inc 有機薄膜トランジスタおよびその製造方法
WO2004100282A2 (en) * 2003-05-12 2004-11-18 Cambridge University Technical Services Limited Manufacture of a polymer device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
WO2001008242A1 (en) * 1999-07-21 2001-02-01 E Ink Corporation Preferred methods for producing electrical circuit elements used to control an electronic display
US6882045B2 (en) * 1999-10-28 2005-04-19 Thomas J. Massingill Multi-chip module and method for forming and method for deplating defective capacitors
GB2373095A (en) 2001-03-09 2002-09-11 Seiko Epson Corp Patterning substrates with evaporation residues
GB0112611D0 (en) 2001-05-23 2001-07-18 Plastic Logic Ltd Patterning of devices
GB0116735D0 (en) 2001-07-09 2001-08-29 Plastic Logic Ltd Alignment of polymers
EP1282175A3 (en) * 2001-08-03 2007-03-14 FUJIFILM Corporation Conductive pattern material and method for forming conductive pattern
GB2379083A (en) * 2001-08-20 2003-02-26 Seiko Epson Corp Inkjet printing on a substrate using two immiscible liquids
KR100961251B1 (ko) 2001-10-01 2010-06-03 코닌클리케 필립스 일렉트로닉스 엔.브이. 조성물, 전자 디바이스 및 전자 디바이스의 제조 방법
JP2003229579A (ja) 2001-11-28 2003-08-15 Konica Corp 電界効果トランジスタ及びその製造方法
JP4360801B2 (ja) * 2001-12-25 2009-11-11 シャープ株式会社 トランジスタおよびそれを用いた表示装置
KR100774258B1 (ko) 2001-12-27 2007-11-08 엘지.필립스 엘시디 주식회사 액정표시장치용 잉크젯 방식 스페이서
JP2003318190A (ja) 2002-04-22 2003-11-07 Seiko Epson Corp 半導体装置の製造方法、電気光学装置の製造方法、電子機器
JP2004031933A (ja) 2002-05-09 2004-01-29 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法及び、それにより製造された有機薄膜トランジスタと有機薄膜トランジスタシート
GB2388709A (en) 2002-05-17 2003-11-19 Seiko Epson Corp Circuit fabrication method
GB2391385A (en) 2002-07-26 2004-02-04 Seiko Epson Corp Patterning method by forming indent region to control spreading of liquid material deposited onto substrate
JP2004273982A (ja) 2003-03-12 2004-09-30 Konica Minolta Holdings Inc 薄膜トランジスタシートの製造方法
JP4713818B2 (ja) 2003-03-28 2011-06-29 パナソニック株式会社 有機トランジスタの製造方法、及び有機el表示装置の製造方法
KR20050029426A (ko) * 2003-09-22 2005-03-28 삼성에스디아이 주식회사 칼라필터층 또는 색변환층을 갖는 풀칼라 유기전계발광소자
CN1605916B (zh) * 2003-10-10 2010-05-05 乐金显示有限公司 具有薄膜晶体管阵列基板的液晶显示板及它们的制造方法
JP4385812B2 (ja) * 2004-03-26 2009-12-16 株式会社日立製作所 薄膜トランジスタおよびその製造方法
KR100635565B1 (ko) * 2004-06-29 2006-10-17 삼성에스디아이 주식회사 유기전계발광 표시장치의 제조방법과 그에 따른 표시장치
JP4349307B2 (ja) * 2005-03-16 2009-10-21 セイコーエプソン株式会社 有機半導体装置の製造方法、有機半導体装置、電子デバイスおよび電子機器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148483A (ja) * 1999-09-30 2001-05-29 Internatl Business Mach Corp <Ibm> フラット・パネル・ディスプレイ用の高性能薄膜トランジスタおよびアクティブ・マトリックス・プロセス
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法
JP2003202587A (ja) * 2001-12-28 2003-07-18 Sanyo Electric Co Ltd 表示装置及びその製造方法
US20040119073A1 (en) * 2002-12-20 2004-06-24 International Business Machines Corporation Synthesis and application of photosensitive pentacene precursor in organic thin film transistors
JP2004260057A (ja) * 2003-02-27 2004-09-16 Konica Minolta Holdings Inc 有機薄膜トランジスタおよびその製造方法
WO2004100282A2 (en) * 2003-05-12 2004-11-18 Cambridge University Technical Services Limited Manufacture of a polymer device
JP2007527542A (ja) * 2003-05-12 2007-09-27 ケンブリッジ エンタープライズ リミティド ポリマーデバイスの製造

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008270744A (ja) * 2007-03-28 2008-11-06 Toppan Printing Co Ltd 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、およびアクティブマトリスクディスプレイ
JP2011071501A (ja) * 2009-08-24 2011-04-07 Ricoh Co Ltd 有機電子デバイスの製造方法および有機電子デバイス
JP2013531884A (ja) * 2010-05-28 2013-08-08 コーニング インコーポレイテッド 光活性有機材料を用いる強化半導体素子及びその作製方法
KR20120094575A (ko) * 2011-02-17 2012-08-27 삼성전자주식회사 표시 기판 및 이의 제조 방법
JP2014512108A (ja) * 2011-04-21 2014-05-19 シーピーアイ イノベーション サービシズ リミテッド トランジスタ
US10090482B2 (en) 2011-04-21 2018-10-02 Cpi Innovation Services Limited Transistors

Also Published As

Publication number Publication date
US20060197884A1 (en) 2006-09-07
US20110014736A1 (en) 2011-01-20
US8293569B2 (en) 2012-10-23
CN1870284A (zh) 2006-11-29
TW200703735A (en) 2007-01-16
CN100517744C (zh) 2009-07-22
TWI434446B (zh) 2014-04-11
KR20060114889A (ko) 2006-11-08
KR101219035B1 (ko) 2013-01-07

Similar Documents

Publication Publication Date Title
US8293569B2 (en) Organic thin film transistor array panel and method of manufacturing the same
US8039296B2 (en) Organic thin film transistor array panel and manufacturing method thereof
US7768000B2 (en) Thin film transistor array panel and manufacturing method thereof
US7919778B2 (en) Making organic thin film transistor array panels
KR20060098522A (ko) 유기 박막 트랜지스터 표시판 및 그 제조 방법
US20070024766A1 (en) Organic thin film transistor display panel
US7915074B2 (en) Thin film transistor array panel and manufacturing method thereof
CN101355095A (zh) 有机薄膜晶体管阵列面板及其制造方法
US8399311B2 (en) Thin film transistor array panel and method of manufacture
JP2007140520A (ja) 有機薄膜トランジスタ表示板及びその製造方法
KR20060104092A (ko) 유기 박막 트랜지스터 표시판 및 그 제조 방법
JP2008078655A (ja) 薄膜トランジスタ表示板の製造方法
JP4928926B2 (ja) インクジェットプリンティングシステム及びこれを用いた薄膜トランジスタ表示板の製造方法
CN1983620B (zh) 有机薄膜晶体管阵列面板
JP5132880B2 (ja) 有機薄膜トランジスタ表示板及びその製造方法
JP2007053380A (ja) 有機薄膜トランジスタ表示板及びその製造方法
KR20060097967A (ko) 유기 박막 트랜지스터 표시판 및 그 제조 방법
KR100656920B1 (ko) 유기 박막 트랜지스터 표시판의 제조 방법
KR20070094252A (ko) 박막 트랜지스터 표시판 및 그 제조 방법
KR20050077569A (ko) 유기 박막 트랜지스터 표시판의 제조 방법
KR20080082226A (ko) 유기 박막 트랜지스터 표시판 및 그 제조 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090421

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090421

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120709

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120717

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20121218