JP2006310594A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2006310594A JP2006310594A JP2005132093A JP2005132093A JP2006310594A JP 2006310594 A JP2006310594 A JP 2006310594A JP 2005132093 A JP2005132093 A JP 2005132093A JP 2005132093 A JP2005132093 A JP 2005132093A JP 2006310594 A JP2006310594 A JP 2006310594A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000010306 acid treatment Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】半導体基板(1)上に第1のマスクを形成する工程と、前記第1のマスクを加工して微細部分の第1のマスクパターンを形成する工程と、前記第1のマスクパターンが形成された前記半導体基板上に第2のマスク(3)を形成する工程と、前記第2のマスク上の所定部分に第2のマスクパターンを形成する工程と、前記第2のマスクを前記第2のマスクパターンにより異方性エッチングで加工し、第3のマスクパターンを形成する工程と、前記第2のマスクパターン及び前記第1のマスクパターンを除去する工程と、前記第3のマスクパターンにより前記半導体基板を加工する工程と、を有する。
【選択図】 図15
Description
図1〜図8は、第1の実施の形態に係る半導体装置の製造工程を模式的に示した平面図であり、図9〜図16は、図1〜図8にそれぞれ対応するA−A断面図である。
図17〜図25は、第2の実施の形態に係る半導体装置の製造工程を模式的に示した平面図であり、図26〜図34は、図17〜図25にそれぞれ対応するA−A断面図である。本第2の実施の形態では、ダマシンゲートプロセスを用い、第1の実施の形態に比べてFin部分の間の距離が短いアクティブエリアを形成する。
Claims (8)
- 半導体基板上に第1のマスクを形成する工程と、
前記第1のマスクを加工して微細部分の第1のマスクパターンを形成する工程と、
前記第1のマスクパターンが形成された前記半導体基板上に第2のマスクを形成する工程と、
前記第2のマスク上の所定部分に第2のマスクパターンを形成する工程と、
前記第2のマスクを前記第2のマスクパターンにより異方性エッチングで加工し、第3のマスクパターンを形成する工程と、
前記第2のマスクパターン及び前記第1のマスクパターンを除去する工程と、
前記第3のマスクパターンにより前記半導体基板を加工する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記第1のマスクはシリコン酸化膜であり、前記第2のマスクはシリコン窒化膜であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第3のマスクパターンは、前記第2のマスクパターンが形成されていない領域の前記第1のマスクパターンの側壁に形成されることを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 半導体基板上に第1のマスクを形成する工程と、
前記第1のマスク及び前記半導体基板を加工して微細部分となる凸部分を形成する工程と、
前記凸部分が形成された前記半導体基板上にダミー層間膜を埋め込む工程と、
前記第1のマスクを除去し、ダミー層間膜パターンを形成する工程と、
前記ダミー層間膜パターンが形成された前記前記半導体基板上に第2のマスクを形成する工程と、
前記第2のマスク上の所定部分に第1のマスクパターンを形成する工程と、
前記第2のマスクを前記第1のマスクパターンにより異方性エッチングで加工し、第2のマスクパターンを形成する工程と、
前記第1のマスクパターンを除去する工程と、
前記第2のマスクパターンにより前記半導体基板を加工する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記第1のマスク及び前記第2のマスクはシリコン窒化膜であることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記半導体基板はSOI基板であることを特徴とする請求項1乃至5のいずれかに記載の半導体装置の製造方法。
- 前記第2のマスクにより前記SOI基板のシリコン活性膜を加工することを特徴とする請求項6に記載の半導体装置の製造方法。
- 前記第2のマスクパターンは、前記第1のマスクパターンが形成されていない領域の前記ダミー層間膜パターンの内壁に形成されることを特徴とする請求項4乃至7のいずれかに記載の半導体装置の製造方法。
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JP2005132093A JP4987244B2 (ja) | 2005-04-28 | 2005-04-28 | 半導体装置の製造方法 |
US11/411,800 US7709395B2 (en) | 2005-04-28 | 2006-04-27 | Semiconductor device fabrication method |
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JP2005132093A JP4987244B2 (ja) | 2005-04-28 | 2005-04-28 | 半導体装置の製造方法 |
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JP4987244B2 JP4987244B2 (ja) | 2012-07-25 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008219002A (ja) * | 2007-02-28 | 2008-09-18 | Internatl Business Mach Corp <Ibm> | ゲート・フィン間の重なりセンシティビティが低減されたFinFET |
WO2009147772A1 (ja) * | 2008-06-05 | 2009-12-10 | パナソニック株式会社 | 半導体装置及びその製造方法 |
Families Citing this family (1)
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JP5193582B2 (ja) | 2007-12-12 | 2013-05-08 | 株式会社東芝 | 半導体装置の製造方法 |
Citations (4)
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---|---|---|---|---|
JPH05198817A (ja) * | 1991-08-28 | 1993-08-06 | Sharp Corp | 半導体装置の構造および製造方法 |
US6391782B1 (en) * | 2000-06-20 | 2002-05-21 | Advanced Micro Devices, Inc. | Process for forming multiple active lines and gate-all-around MOSFET |
JP2002198538A (ja) * | 2000-10-18 | 2002-07-12 | Internatl Business Mach Corp <Ibm> | 半導体側壁フィンを製造する方法 |
WO2005004206A2 (en) * | 2003-07-01 | 2005-01-13 | International Business Machines Corporation | Integrated circuit having pairs of parallel complementary finfets |
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JP4044276B2 (ja) | 2000-09-28 | 2008-02-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2002280388A (ja) | 2001-03-15 | 2002-09-27 | Toshiba Corp | 半導体装置の製造方法 |
JP4014891B2 (ja) | 2001-03-29 | 2007-11-28 | 株式会社東芝 | 半導体装置の製造方法 |
US6583469B1 (en) | 2002-01-28 | 2003-06-24 | International Business Machines Corporation | Self-aligned dog-bone structure for FinFET applications and methods to fabricate the same |
US6706571B1 (en) * | 2002-10-22 | 2004-03-16 | Advanced Micro Devices, Inc. | Method for forming multiple structures in a semiconductor device |
US6872647B1 (en) * | 2003-05-06 | 2005-03-29 | Advanced Micro Devices, Inc. | Method for forming multiple fins in a semiconductor device |
JP3863516B2 (ja) | 2003-10-03 | 2006-12-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
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- 2005-04-28 JP JP2005132093A patent/JP4987244B2/ja active Active
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- 2006-04-27 US US11/411,800 patent/US7709395B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05198817A (ja) * | 1991-08-28 | 1993-08-06 | Sharp Corp | 半導体装置の構造および製造方法 |
US6391782B1 (en) * | 2000-06-20 | 2002-05-21 | Advanced Micro Devices, Inc. | Process for forming multiple active lines and gate-all-around MOSFET |
JP2002198538A (ja) * | 2000-10-18 | 2002-07-12 | Internatl Business Mach Corp <Ibm> | 半導体側壁フィンを製造する方法 |
WO2005004206A2 (en) * | 2003-07-01 | 2005-01-13 | International Business Machines Corporation | Integrated circuit having pairs of parallel complementary finfets |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008219002A (ja) * | 2007-02-28 | 2008-09-18 | Internatl Business Mach Corp <Ibm> | ゲート・フィン間の重なりセンシティビティが低減されたFinFET |
US8518767B2 (en) | 2007-02-28 | 2013-08-27 | International Business Machines Corporation | FinFET with reduced gate to fin overlay sensitivity |
US8536632B2 (en) | 2007-02-28 | 2013-09-17 | International Business Machines Corporation | FinFET with reduced gate to fin overlay sensitivity |
WO2009147772A1 (ja) * | 2008-06-05 | 2009-12-10 | パナソニック株式会社 | 半導体装置及びその製造方法 |
Also Published As
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JP4987244B2 (ja) | 2012-07-25 |
US20060246685A1 (en) | 2006-11-02 |
US7709395B2 (en) | 2010-05-04 |
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