JP2006310317A - 有機エレクトロルミネッセンス素子及びその製造方法 - Google Patents
有機エレクトロルミネッセンス素子及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000005401 electroluminescence Methods 0.000 title claims description 31
- 239000010408 film Substances 0.000 claims abstract description 120
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 229910052771 Terbium Inorganic materials 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000001771 vacuum deposition Methods 0.000 claims description 7
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- 229910016048 MoW Inorganic materials 0.000 description 18
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- -1 0.1 to 0.5 atomic% Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
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- 238000002425 crystallisation Methods 0.000 description 5
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
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- 230000008025 crystallization Effects 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229920000265 Polyparaphenylene Polymers 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- TWPMMLHBHPYSMT-UHFFFAOYSA-N 3-methyl-n-phenylaniline Chemical compound CC1=CC=CC(NC=2C=CC=CC=2)=C1 TWPMMLHBHPYSMT-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000005266 diarylamine group Chemical group 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007715 excimer laser crystallization Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
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Abstract
【解決手段】基板300上に半導体層310,ゲート電極330及びソース/ドレイン電極350,355を含む薄膜トランジスタ,及びソース/ドレイン電極350,355と接続される第1の電極360を同一層に形成し,第1の電極360上に積層され,少なくとも有機発光層を有する有機膜層380と,有機膜層380上に積層される第2の電極390とを含み,ソース/ドレイン電極及び第1の電極は,透明導電膜と,透明導電膜の下部に,0.1〜0.3原子%のSm,0.1〜0.5原子%のTb,0.1〜0.4原子%のAu及び0.4〜1.0原子%のCuを含むAg合金で形成される反射膜とを含んで形成される有機エレクトロルミネッセンス素子が提供される。
【選択図】図2
Description
Ag合金(0.3原子%のSm,0.1原子%〜0.5原子%のTb,0.4原子%のAu及び0.4〜1.0原子%のCuを含む物質)を,スパッタリング法により有機エレクトロルミネッセンス素子のソース/ドレイン電極として500nmの厚さで積層した。この他の構成は,通常の薄膜トランジスタと同様に形成した。
上記のソース/ドレイン電極をMoW(50nm)/Al−Nd(400nm)/MoW(50nm)の厚さからなる3重膜で積層したことを除いては,上記の実施例1と同様に形成した。
上記のソース/ドレイン電極をTi(70nm)/Al(380nm)/MoW(100nm)の厚さからなる3重膜で積層したことを除いては,上記の実施例1と同様に形成した。
上記のソース/ドレイン電極をTi(150nm)/Al(300nm)/MoW(100nm)の厚さからなる3重膜で積層したことを除いては,上記の実施例1と同様に形成した。
305 バッファ層
310 半導体層
310a,310c ソース/ドレイン領域
310b チャンネル領域
320 ゲート絶縁膜
330 ゲート電極
340 層間絶縁膜
341,345 コンタクトホール
350,355 ソース/ドレイン電極
350a,355a,360a 反射膜
350b,355b,360b 透明導電膜
360 第1の電極
370 画素定義膜
371 開口部
380 有機膜層
390 第2の電極
Claims (13)
- 基板と;
前記基板上に半導体層,ゲート電極及びソース/ドレイン電極を含む薄膜トランジスタと;
前記ソース/ドレイン電極のいずれか一方と接続されて同一層に形成されている第1の電極と;
前記第1の電極上に積層され,少なくとも有機発光層を含む有機膜層と;
前記有機膜層上に積層される第2の電極と;
を含み,
前記ソース/ドレイン電極及び前記第1の電極は,透明導電膜と,前記透明導電膜の下部に,0.1原子%〜0.3原子%のSm,0.1原子%〜0.5原子%のTb,0.1原子%〜0.4原子%のAu及び0.4原子%〜1.0原子%のCuを含むAg合金で形成される反射膜とを含んで形成されることを特徴とする,有機エレクトロルミネッセンス素子。 - 前記Ag合金の抵抗は,3μΩ・cmであることを特徴とする,請求項1に記載の有機エレクトロルミネッセンス素子。
- 前記反射膜の厚さは,70nm〜120nmであることを特徴とする,請求項1に記載の有機エレクトロルミネッセンス素子。
- 前記透明導電膜の厚さは,5nm〜10nmであることを特徴とする,請求項1に記載の有機エレクトロルミネッセンス素子。
- 前記ソース/ドレイン電極の幅は,2μm〜3μmであることを特徴とする,請求項1に記載の有機エレクトロルミネッセンス素子。
- 前記第2の電極は,Mg,Al,Ag,Ca,およびこれらの合金からなる群より選ばれる1種で形成される透過電極であることを特徴とする,請求項1に記載の有機エレクトロルミネッセンス素子。
- 基板上に半導体層,ゲート電極及びソース/ドレイン電極を含む薄膜トランジスタと,前記ソース/ドレイン電極と接続される第1の電極を同一層に形成する段階と;
前記第1の電極の上部に少なくとも有機発光層を含む有機膜層を形成する段階と;
前記有機膜層の上部に第2の電極を形成する段階と;
を含み,
前記ソース/ドレイン電極及び前記第1の電極は,透明導電膜と,前記透明導電膜の下部に,0.1原子%〜0.3原子%のSm,0.1原子%〜0.5原子%のTb,0.1原子%〜0.4原子%のAu及び0.4原子%〜1.0原子%のCuを含むAg合金で形成される反射膜とを含んで形成されることを特徴とする,有機エレクトロルミネッセンス素子の製造方法。 - 前記Ag合金の抵抗は,3μΩ・cmであることを特徴とする,請求項7に記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記反射膜の厚さは,70nm〜120nmであることを特徴とする,請求項7に記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記透明導電膜の厚さは,5nm〜10nmであることを特徴とする,請求項7に記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記ソース/ドレイン電極の幅は,2μm〜3μmであることを特徴とする,請求項7に記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記第2の電極は,Mg,Al,Ag,Ca,およびこれらの合金からなる群より選ばれる1種で形成される透過電極であることを特徴とする,請求項7に記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記ソース/ドレイン電極及び第1の電極は,スパッタリング法または真空蒸着法で形成されることを特徴とする,請求項7に記載の有機エレクトロルミネッセンス素子の製造方法。
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Also Published As
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US20060243976A1 (en) | 2006-11-02 |
KR20060112964A (ko) | 2006-11-02 |
KR100731739B1 (ko) | 2007-06-22 |
CN1855526A (zh) | 2006-11-01 |
US7511309B2 (en) | 2009-03-31 |
CN100472798C (zh) | 2009-03-25 |
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