ITMI20061541A1 - Processo per fabbricare un transistore tft - Google Patents
Processo per fabbricare un transistore tftInfo
- Publication number
- ITMI20061541A1 ITMI20061541A1 IT001541A ITMI20061541A ITMI20061541A1 IT MI20061541 A1 ITMI20061541 A1 IT MI20061541A1 IT 001541 A IT001541 A IT 001541A IT MI20061541 A ITMI20061541 A IT MI20061541A IT MI20061541 A1 ITMI20061541 A1 IT MI20061541A1
- Authority
- IT
- Italy
- Prior art keywords
- manufacturing
- tft transistor
- tft
- transistor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT001541A ITMI20061541A1 (it) | 2006-08-02 | 2006-08-02 | Processo per fabbricare un transistore tft |
US11/890,031 US20080067516A1 (en) | 2006-08-02 | 2007-08-02 | Method for manufacturing a TFT transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT001541A ITMI20061541A1 (it) | 2006-08-02 | 2006-08-02 | Processo per fabbricare un transistore tft |
Publications (1)
Publication Number | Publication Date |
---|---|
ITMI20061541A1 true ITMI20061541A1 (it) | 2008-02-03 |
Family
ID=39187647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT001541A ITMI20061541A1 (it) | 2006-08-02 | 2006-08-02 | Processo per fabbricare un transistore tft |
Country Status (2)
Country | Link |
---|---|
US (1) | US20080067516A1 (it) |
IT (1) | ITMI20061541A1 (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11362215B2 (en) | 2018-03-30 | 2022-06-14 | Intel Corporation | Top-gate doped thin film transistor |
US11257956B2 (en) | 2018-03-30 | 2022-02-22 | Intel Corporation | Thin film transistor with selectively doped oxide thin film |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6773971B1 (en) * | 1994-07-14 | 2004-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions |
US7211828B2 (en) * | 2001-06-20 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
DE10245608A1 (de) * | 2002-09-30 | 2004-04-15 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterelement mit verbesserten Halo-Strukturen und Verfahren zur Herstellung der Halo-Strukturen eines Halbleiterelements |
KR100731739B1 (ko) * | 2005-04-28 | 2007-06-22 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그의 제조 방법 |
-
2006
- 2006-08-02 IT IT001541A patent/ITMI20061541A1/it unknown
-
2007
- 2007-08-02 US US11/890,031 patent/US20080067516A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20080067516A1 (en) | 2008-03-20 |
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