JP2006295209A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006295209A5 JP2006295209A5 JP2006175346A JP2006175346A JP2006295209A5 JP 2006295209 A5 JP2006295209 A5 JP 2006295209A5 JP 2006175346 A JP2006175346 A JP 2006175346A JP 2006175346 A JP2006175346 A JP 2006175346A JP 2006295209 A5 JP2006295209 A5 JP 2006295209A5
- Authority
- JP
- Japan
- Prior art keywords
- opening
- film
- conductor film
- connection
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims description 118
- 239000004065 semiconductor Substances 0.000 claims description 69
- 229920001721 Polyimide Polymers 0.000 claims description 54
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 238000005342 ion exchange Methods 0.000 claims description 18
- 238000009713 electroplating Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 239000009719 polyimide resin Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 189
- 230000004048 modification Effects 0.000 description 15
- 238000006011 modification reaction Methods 0.000 description 15
- 239000003822 epoxy resin Substances 0.000 description 10
- 229920000647 polyepoxide Polymers 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000000875 corresponding Effects 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000005341 cation exchange Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000005462 imide group Chemical group 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L Copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052803 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006175346A JP2006295209A (ja) | 2006-06-26 | 2006-06-26 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006175346A JP2006295209A (ja) | 2006-06-26 | 2006-06-26 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000089174A Division JP4177950B2 (ja) | 2000-03-28 | 2000-03-28 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006295209A JP2006295209A (ja) | 2006-10-26 |
| JP2006295209A5 true JP2006295209A5 (ko) | 2007-05-17 |
Family
ID=37415348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006175346A Pending JP2006295209A (ja) | 2006-06-26 | 2006-06-26 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006295209A (ko) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2751242B2 (ja) * | 1988-09-28 | 1998-05-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3285919B2 (ja) * | 1992-02-05 | 2002-05-27 | 株式会社東芝 | 半導体装置 |
| JPH07211723A (ja) * | 1994-01-25 | 1995-08-11 | Casio Comput Co Ltd | 半導体装置の製造方法 |
| JP3475260B2 (ja) * | 1994-12-07 | 2003-12-08 | 日本リーロナール株式会社 | 樹脂製品への機能性皮膜の形成方法 |
| JPH08162456A (ja) * | 1994-12-07 | 1996-06-21 | Kawasaki Steel Corp | バンプの製造方法 |
| JP3589794B2 (ja) * | 1996-06-25 | 2004-11-17 | 富士通株式会社 | 外部接続用電極の製造方法及び外部接続用電極及び 半導体装置 |
| JP3675091B2 (ja) * | 1997-03-06 | 2005-07-27 | 日本リーロナール株式会社 | ポリイミド樹脂表面への導電性皮膜形成方法 |
| JPH11354563A (ja) * | 1998-06-11 | 1999-12-24 | Citizen Watch Co Ltd | 半導体配線の構造 |
| JP4177950B2 (ja) * | 2000-03-28 | 2008-11-05 | ローム株式会社 | 半導体装置の製造方法 |
-
2006
- 2006-06-26 JP JP2006175346A patent/JP2006295209A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8900993B2 (en) | Semiconductor device sealed in a resin section and method for manufacturing the same | |
| US8597983B2 (en) | Semiconductor device packaging having substrate with pre-encapsulation through via formation | |
| US8564116B2 (en) | Semiconductor device with reinforcement plate and method of forming same | |
| US20080164575A1 (en) | Method for manufacturing a three-dimensional semiconductor device and a wafer used therein | |
| JP2006210745A (ja) | 半導体装置及びその製造方法 | |
| JP2006165252A (ja) | チップ内蔵基板の製造方法 | |
| JP2015041773A (ja) | インターポーザ基板およびその製造方法 | |
| KR20080062225A (ko) | 전력 소자 패키지 | |
| JP4177950B2 (ja) | 半導体装置の製造方法 | |
| US7923835B2 (en) | Package, electronic device, substrate having a separation region and a wiring layers, and method for manufacturing | |
| JP4070470B2 (ja) | 半導体装置用多層回路基板及びその製造方法並びに半導体装置 | |
| US8723051B2 (en) | Wiring substrate and method for manufacturing wiring substrate | |
| JP2009105301A (ja) | 半導体パッケージ及びその製造方法、半導体パッケージを備える半導体装置 | |
| JP4179186B2 (ja) | 配線基板およびその製造方法および半導体装置 | |
| JP4084737B2 (ja) | 半導体装置 | |
| TW200843063A (en) | Structure of semiconductor chip and package structure having semiconductor chip embedded therein | |
| JP2004342990A (ja) | 半導体装置及びその製造方法、回路基板並びに電子機器 | |
| US10651374B2 (en) | Semiconductor device, and method for manufacturing the same | |
| JP2006295209A5 (ko) | ||
| JP2018088505A (ja) | 半導体装置およびその製造方法 | |
| US6734042B2 (en) | Semiconductor device and method for fabricating the same | |
| JP2006295209A (ja) | 半導体装置 | |
| JP2009135193A (ja) | シリコンスルーホールを有する半導体チップ装置及びその製造方法 | |
| JP2000332155A (ja) | 半導体装置及びその製造方法 | |
| KR20020090301A (ko) | 반도체 디바이스 및 그 제조 방법 |