JP2006286118A5 - - Google Patents

Download PDF

Info

Publication number
JP2006286118A5
JP2006286118A5 JP2005106446A JP2005106446A JP2006286118A5 JP 2006286118 A5 JP2006286118 A5 JP 2006286118A5 JP 2005106446 A JP2005106446 A JP 2005106446A JP 2005106446 A JP2005106446 A JP 2005106446A JP 2006286118 A5 JP2006286118 A5 JP 2006286118A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2005106446A
Other versions
JP2006286118A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005106446A priority Critical patent/JP2006286118A/ja
Priority claimed from JP2005106446A external-priority patent/JP2006286118A/ja
Priority to US11/377,433 priority patent/US7280409B2/en
Priority to CNB2006100716680A priority patent/CN100472655C/zh
Publication of JP2006286118A publication Critical patent/JP2006286118A/ja
Publication of JP2006286118A5 publication Critical patent/JP2006286118A5/ja
Ceased legal-status Critical Current

Links

JP2005106446A 2005-04-01 2005-04-01 閾値電圧制御機能を有する不揮発性記憶装置 Ceased JP2006286118A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005106446A JP2006286118A (ja) 2005-04-01 2005-04-01 閾値電圧制御機能を有する不揮発性記憶装置
US11/377,433 US7280409B2 (en) 2005-04-01 2006-03-17 Non-volatile memory device with threshold voltage control function
CNB2006100716680A CN100472655C (zh) 2005-04-01 2006-03-30 具有阈值电压控制功能的非易失性存储器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005106446A JP2006286118A (ja) 2005-04-01 2005-04-01 閾値電圧制御機能を有する不揮発性記憶装置

Publications (2)

Publication Number Publication Date
JP2006286118A JP2006286118A (ja) 2006-10-19
JP2006286118A5 true JP2006286118A5 (ja) 2008-04-10

Family

ID=37030529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005106446A Ceased JP2006286118A (ja) 2005-04-01 2005-04-01 閾値電圧制御機能を有する不揮発性記憶装置

Country Status (3)

Country Link
US (1) US7280409B2 (ja)
JP (1) JP2006286118A (ja)
CN (1) CN100472655C (ja)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7432812B2 (en) * 2006-04-26 2008-10-07 Xerox Corporation Passive radio frequency device for monitoring wear in components
US8239735B2 (en) 2006-05-12 2012-08-07 Apple Inc. Memory Device with adaptive capacity
WO2007132457A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
US8050086B2 (en) 2006-05-12 2011-11-01 Anobit Technologies Ltd. Distortion estimation and cancellation in memory devices
WO2008026203A2 (en) 2006-08-27 2008-03-06 Anobit Technologies Estimation of non-linear distortion in memory devices
WO2008053472A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7924648B2 (en) * 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US8151166B2 (en) 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US8369141B2 (en) 2007-03-12 2013-02-05 Apple Inc. Adaptive estimation of memory cell read thresholds
JP2008270343A (ja) * 2007-04-17 2008-11-06 Renesas Technology Corp 不揮発性半導体記憶装置
US8001320B2 (en) 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US8429493B2 (en) 2007-05-12 2013-04-23 Apple Inc. Memory device with internal signap processing unit
US8234545B2 (en) 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
JP5241148B2 (ja) * 2007-06-08 2013-07-17 スパンション エルエルシー 半導体装置及びその制御方法
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US8000141B1 (en) * 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US8527819B2 (en) 2007-10-19 2013-09-03 Apple Inc. Data storage in analog memory cell arrays having erase failures
US8068360B2 (en) 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
KR101509836B1 (ko) 2007-11-13 2015-04-06 애플 인크. 멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
JP2009146474A (ja) * 2007-12-12 2009-07-02 Toshiba Corp 不揮発性半導体記憶装置
US8209588B2 (en) 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8085586B2 (en) 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
WO2009090731A1 (ja) * 2008-01-16 2009-07-23 Fujitsu Limited 半導体記憶装置、制御装置、制御方法
US8159874B2 (en) 2008-01-22 2012-04-17 Micron Technology, Inc. Cell operation monitoring
US8156398B2 (en) 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US8230300B2 (en) 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8059457B2 (en) 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
JP2009266349A (ja) 2008-04-28 2009-11-12 Toshiba Corp 不揮発性半導体記憶装置
KR101373751B1 (ko) * 2008-06-03 2014-03-13 삼성전자주식회사 칩 면적을 줄여 트리밍 작업의 확장성을 갖는 불휘발성메모리 장치
JP5072723B2 (ja) * 2008-06-11 2012-11-14 株式会社東芝 不揮発性半導体記憶装置
JP4505766B2 (ja) * 2008-06-30 2010-07-21 ルネサスエレクトロニクス株式会社 データ処理装置及びトリミングデータ読み出し方法
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US7995388B1 (en) 2008-08-05 2011-08-09 Anobit Technologies Ltd. Data storage using modified voltages
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
US8208304B2 (en) 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8248831B2 (en) 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8832354B2 (en) 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8572311B1 (en) 2010-01-11 2013-10-29 Apple Inc. Redundant data storage in multi-die memory systems
JP2011211767A (ja) * 2010-03-29 2011-10-20 Toshiba Corp 半導体集積回路装置
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8767459B1 (en) 2010-07-31 2014-07-01 Apple Inc. Data storage in analog memory cells across word lines using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
JP5380508B2 (ja) * 2011-09-27 2014-01-08 株式会社東芝 不揮発性半導体記憶装置
TWI514391B (zh) * 2013-07-23 2015-12-21 Winbond Electronics Corp 半導體記憶裝置及其抹除方法
US9589645B2 (en) * 2014-10-06 2017-03-07 Sandisk Technologies Llc Block refresh to adapt to new die trim settings
US9928126B1 (en) 2017-06-01 2018-03-27 Apple Inc. Recovery from cross-temperature read failures by programming neighbor word lines
TWI717749B (zh) * 2019-06-10 2021-02-01 慧榮科技股份有限公司 記憶體之資料清除方法及應用其之儲存裝置
JP2021174566A (ja) * 2020-04-27 2021-11-01 キオクシア株式会社 半導体記憶装置
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07320488A (ja) * 1994-05-19 1995-12-08 Hitachi Ltd 一括消去型不揮発性記憶装置とその消去方法
JP2000348493A (ja) 1999-06-03 2000-12-15 Fujitsu Ltd 不揮発性メモリ回路
US6452837B2 (en) * 1999-12-27 2002-09-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory and threshold voltage control method therefor
JP3653449B2 (ja) 2000-06-15 2005-05-25 シャープ株式会社 不揮発性半導体記憶装置
JP4663094B2 (ja) 2000-10-13 2011-03-30 株式会社半導体エネルギー研究所 半導体装置
JP2002133887A (ja) * 2000-10-31 2002-05-10 Matsushita Electric Ind Co Ltd 不揮発性半導体メモリ装置
JP4039812B2 (ja) * 2001-01-15 2008-01-30 松下電器産業株式会社 不揮発性記憶装置
JP2003178597A (ja) * 2001-12-11 2003-06-27 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2005228371A (ja) * 2004-02-10 2005-08-25 Toshiba Corp 半導体記憶装置及びその閾値電圧制御方法

Similar Documents

Publication Publication Date Title
FR19C1042I1 (ja)
BE2012C042I2 (ja)
BRPI0601358B8 (pt) Aplicador de clipe cirúrgico
BRPI0601402B8 (pt) Aplicador de grampos cirúrgicos
JP2006286118A5 (ja)
IN2008DE04421A (ja)
BR122017004707A2 (ja)
JP2005187480A5 (ja)
BRPI0609157A8 (ja)
BRPI0608519A2 (ja)
BR122020005056A2 (ja)
AP2140A (ja)
JP2007062561A5 (ja)
JP2006211873A5 (ja)
JP2007064627A5 (ja)
BR122016029989A2 (ja)
JP2007040914A5 (ja)
JP2007018397A5 (ja)
JP2006313276A5 (ja)
JP2007061867A5 (ja)
JP2006352555A5 (ja)
JP2006276045A5 (ja)
BRPI0618215B8 (ja)
JP2006165549A5 (ja)
JP2006309606A5 (ja)