US7432812B2
(en)
*
|
2006-04-26 |
2008-10-07 |
Xerox Corporation |
Passive radio frequency device for monitoring wear in components
|
US8239735B2
(en)
|
2006-05-12 |
2012-08-07 |
Apple Inc. |
Memory Device with adaptive capacity
|
WO2007132457A2
(en)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies Ltd. |
Combined distortion estimation and error correction coding for memory devices
|
US8050086B2
(en)
|
2006-05-12 |
2011-11-01 |
Anobit Technologies Ltd. |
Distortion estimation and cancellation in memory devices
|
WO2008026203A2
(en)
|
2006-08-27 |
2008-03-06 |
Anobit Technologies |
Estimation of non-linear distortion in memory devices
|
WO2008053472A2
(en)
|
2006-10-30 |
2008-05-08 |
Anobit Technologies Ltd. |
Reading memory cells using multiple thresholds
|
US7924648B2
(en)
*
|
2006-11-28 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory power and performance management
|
US8151163B2
(en)
|
2006-12-03 |
2012-04-03 |
Anobit Technologies Ltd. |
Automatic defect management in memory devices
|
US8151166B2
(en)
|
2007-01-24 |
2012-04-03 |
Anobit Technologies Ltd. |
Reduction of back pattern dependency effects in memory devices
|
US8369141B2
(en)
|
2007-03-12 |
2013-02-05 |
Apple Inc. |
Adaptive estimation of memory cell read thresholds
|
JP2008270343A
(ja)
*
|
2007-04-17 |
2008-11-06 |
Renesas Technology Corp |
不揮発性半導体記憶装置
|
US8001320B2
(en)
|
2007-04-22 |
2011-08-16 |
Anobit Technologies Ltd. |
Command interface for memory devices
|
US8429493B2
(en)
|
2007-05-12 |
2013-04-23 |
Apple Inc. |
Memory device with internal signap processing unit
|
US8234545B2
(en)
|
2007-05-12 |
2012-07-31 |
Apple Inc. |
Data storage with incremental redundancy
|
JP5241148B2
(ja)
*
|
2007-06-08 |
2013-07-17 |
スパンション エルエルシー |
半導体装置及びその制御方法
|
US7925936B1
(en)
|
2007-07-13 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory device with non-uniform programming levels
|
US8259497B2
(en)
|
2007-08-06 |
2012-09-04 |
Apple Inc. |
Programming schemes for multi-level analog memory cells
|
US8174905B2
(en)
|
2007-09-19 |
2012-05-08 |
Anobit Technologies Ltd. |
Programming orders for reducing distortion in arrays of multi-level analog memory cells
|
US8000141B1
(en)
*
|
2007-10-19 |
2011-08-16 |
Anobit Technologies Ltd. |
Compensation for voltage drifts in analog memory cells
|
US8527819B2
(en)
|
2007-10-19 |
2013-09-03 |
Apple Inc. |
Data storage in analog memory cell arrays having erase failures
|
US8068360B2
(en)
|
2007-10-19 |
2011-11-29 |
Anobit Technologies Ltd. |
Reading analog memory cells using built-in multi-threshold commands
|
KR101509836B1
(ko)
|
2007-11-13 |
2015-04-06 |
애플 인크. |
멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택
|
US8225181B2
(en)
|
2007-11-30 |
2012-07-17 |
Apple Inc. |
Efficient re-read operations from memory devices
|
JP2009146474A
(ja)
*
|
2007-12-12 |
2009-07-02 |
Toshiba Corp |
不揮発性半導体記憶装置
|
US8209588B2
(en)
|
2007-12-12 |
2012-06-26 |
Anobit Technologies Ltd. |
Efficient interference cancellation in analog memory cell arrays
|
US8085586B2
(en)
|
2007-12-27 |
2011-12-27 |
Anobit Technologies Ltd. |
Wear level estimation in analog memory cells
|
WO2009090731A1
(ja)
*
|
2008-01-16 |
2009-07-23 |
Fujitsu Limited |
半導体記憶装置、制御装置、制御方法
|
US8159874B2
(en)
|
2008-01-22 |
2012-04-17 |
Micron Technology, Inc. |
Cell operation monitoring
|
US8156398B2
(en)
|
2008-02-05 |
2012-04-10 |
Anobit Technologies Ltd. |
Parameter estimation based on error correction code parity check equations
|
US7924587B2
(en)
|
2008-02-21 |
2011-04-12 |
Anobit Technologies Ltd. |
Programming of analog memory cells using a single programming pulse per state transition
|
US8230300B2
(en)
|
2008-03-07 |
2012-07-24 |
Apple Inc. |
Efficient readout from analog memory cells using data compression
|
US8059457B2
(en)
|
2008-03-18 |
2011-11-15 |
Anobit Technologies Ltd. |
Memory device with multiple-accuracy read commands
|
US8400858B2
(en)
|
2008-03-18 |
2013-03-19 |
Apple Inc. |
Memory device with reduced sense time readout
|
JP2009266349A
(ja)
|
2008-04-28 |
2009-11-12 |
Toshiba Corp |
不揮発性半導体記憶装置
|
KR101373751B1
(ko)
*
|
2008-06-03 |
2014-03-13 |
삼성전자주식회사 |
칩 면적을 줄여 트리밍 작업의 확장성을 갖는 불휘발성메모리 장치
|
JP5072723B2
(ja)
*
|
2008-06-11 |
2012-11-14 |
株式会社東芝 |
不揮発性半導体記憶装置
|
JP4505766B2
(ja)
*
|
2008-06-30 |
2010-07-21 |
ルネサスエレクトロニクス株式会社 |
データ処理装置及びトリミングデータ読み出し方法
|
US7924613B1
(en)
|
2008-08-05 |
2011-04-12 |
Anobit Technologies Ltd. |
Data storage in analog memory cells with protection against programming interruption
|
US7995388B1
(en)
|
2008-08-05 |
2011-08-09 |
Anobit Technologies Ltd. |
Data storage using modified voltages
|
US8169825B1
(en)
|
2008-09-02 |
2012-05-01 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells subjected to long retention periods
|
US8949684B1
(en)
|
2008-09-02 |
2015-02-03 |
Apple Inc. |
Segmented data storage
|
US8482978B1
(en)
|
2008-09-14 |
2013-07-09 |
Apple Inc. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8000135B1
(en)
|
2008-09-14 |
2011-08-16 |
Anobit Technologies Ltd. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8239734B1
(en)
|
2008-10-15 |
2012-08-07 |
Apple Inc. |
Efficient data storage in storage device arrays
|
US8261159B1
(en)
|
2008-10-30 |
2012-09-04 |
Apple, Inc. |
Data scrambling schemes for memory devices
|
US8208304B2
(en)
|
2008-11-16 |
2012-06-26 |
Anobit Technologies Ltd. |
Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
|
US8248831B2
(en)
|
2008-12-31 |
2012-08-21 |
Apple Inc. |
Rejuvenation of analog memory cells
|
US8397131B1
(en)
|
2008-12-31 |
2013-03-12 |
Apple Inc. |
Efficient readout schemes for analog memory cell devices
|
US8924661B1
(en)
|
2009-01-18 |
2014-12-30 |
Apple Inc. |
Memory system including a controller and processors associated with memory devices
|
US8228701B2
(en)
|
2009-03-01 |
2012-07-24 |
Apple Inc. |
Selective activation of programming schemes in analog memory cell arrays
|
US8259506B1
(en)
|
2009-03-25 |
2012-09-04 |
Apple Inc. |
Database of memory read thresholds
|
US8832354B2
(en)
|
2009-03-25 |
2014-09-09 |
Apple Inc. |
Use of host system resources by memory controller
|
US8238157B1
(en)
|
2009-04-12 |
2012-08-07 |
Apple Inc. |
Selective re-programming of analog memory cells
|
US8479080B1
(en)
|
2009-07-12 |
2013-07-02 |
Apple Inc. |
Adaptive over-provisioning in memory systems
|
US8495465B1
(en)
|
2009-10-15 |
2013-07-23 |
Apple Inc. |
Error correction coding over multiple memory pages
|
US8677054B1
(en)
|
2009-12-16 |
2014-03-18 |
Apple Inc. |
Memory management schemes for non-volatile memory devices
|
US8694814B1
(en)
|
2010-01-10 |
2014-04-08 |
Apple Inc. |
Reuse of host hibernation storage space by memory controller
|
US8572311B1
(en)
|
2010-01-11 |
2013-10-29 |
Apple Inc. |
Redundant data storage in multi-die memory systems
|
JP2011211767A
(ja)
*
|
2010-03-29 |
2011-10-20 |
Toshiba Corp |
半導体集積回路装置
|
US8694853B1
(en)
|
2010-05-04 |
2014-04-08 |
Apple Inc. |
Read commands for reading interfering memory cells
|
US8572423B1
(en)
|
2010-06-22 |
2013-10-29 |
Apple Inc. |
Reducing peak current in memory systems
|
US8595591B1
(en)
|
2010-07-11 |
2013-11-26 |
Apple Inc. |
Interference-aware assignment of programming levels in analog memory cells
|
US9104580B1
(en)
|
2010-07-27 |
2015-08-11 |
Apple Inc. |
Cache memory for hybrid disk drives
|
US8767459B1
(en)
|
2010-07-31 |
2014-07-01 |
Apple Inc. |
Data storage in analog memory cells across word lines using a non-integer number of bits per cell
|
US8856475B1
(en)
|
2010-08-01 |
2014-10-07 |
Apple Inc. |
Efficient selection of memory blocks for compaction
|
US8694854B1
(en)
|
2010-08-17 |
2014-04-08 |
Apple Inc. |
Read threshold setting based on soft readout statistics
|
US9021181B1
(en)
|
2010-09-27 |
2015-04-28 |
Apple Inc. |
Memory management for unifying memory cell conditions by using maximum time intervals
|
JP5380508B2
(ja)
*
|
2011-09-27 |
2014-01-08 |
株式会社東芝 |
不揮発性半導体記憶装置
|
TWI514391B
(zh)
*
|
2013-07-23 |
2015-12-21 |
Winbond Electronics Corp |
半導體記憶裝置及其抹除方法
|
US9589645B2
(en)
*
|
2014-10-06 |
2017-03-07 |
Sandisk Technologies Llc |
Block refresh to adapt to new die trim settings
|
US9928126B1
(en)
|
2017-06-01 |
2018-03-27 |
Apple Inc. |
Recovery from cross-temperature read failures by programming neighbor word lines
|
TWI717749B
(zh)
*
|
2019-06-10 |
2021-02-01 |
慧榮科技股份有限公司 |
記憶體之資料清除方法及應用其之儲存裝置
|
JP2021174566A
(ja)
*
|
2020-04-27 |
2021-11-01 |
キオクシア株式会社 |
半導体記憶装置
|
US11556416B2
(en)
|
2021-05-05 |
2023-01-17 |
Apple Inc. |
Controlling memory readout reliability and throughput by adjusting distance between read thresholds
|
US11847342B2
(en)
|
2021-07-28 |
2023-12-19 |
Apple Inc. |
Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
|