JP2006278522A5 - - Google Patents

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Publication number
JP2006278522A5
JP2006278522A5 JP2005092608A JP2005092608A JP2006278522A5 JP 2006278522 A5 JP2006278522 A5 JP 2006278522A5 JP 2005092608 A JP2005092608 A JP 2005092608A JP 2005092608 A JP2005092608 A JP 2005092608A JP 2006278522 A5 JP2006278522 A5 JP 2006278522A5
Authority
JP
Japan
Prior art keywords
polishing
abrasive
water
polishing agent
soluble
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005092608A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006278522A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005092608A priority Critical patent/JP2006278522A/ja
Priority claimed from JP2005092608A external-priority patent/JP2006278522A/ja
Priority to KR1020077018571A priority patent/KR20070112778A/ko
Priority to PCT/JP2006/303648 priority patent/WO2006103858A1/ja
Priority to EP06714785A priority patent/EP1865546A4/en
Priority to CN2006800094337A priority patent/CN101147242B/zh
Priority to TW095108278A priority patent/TW200716728A/zh
Publication of JP2006278522A publication Critical patent/JP2006278522A/ja
Priority to US11/863,852 priority patent/US7695345B2/en
Publication of JP2006278522A5 publication Critical patent/JP2006278522A5/ja
Withdrawn legal-status Critical Current

Links

JP2005092608A 2005-03-28 2005-03-28 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法 Withdrawn JP2006278522A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005092608A JP2006278522A (ja) 2005-03-28 2005-03-28 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
KR1020077018571A KR20070112778A (ko) 2005-03-28 2006-02-27 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체집적 회로 장치의 제조 방법
PCT/JP2006/303648 WO2006103858A1 (ja) 2005-03-28 2006-02-27 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
EP06714785A EP1865546A4 (en) 2005-03-28 2006-02-27 AGING MACHINE FOR AN INTEGRATED SEMICONDUCTOR SWITCHING DEVICE, METHOD FOR POLISHING THEREFOR AND PROCESS FOR PRODUCING AN INTEGRATED SEMICONDUCTOR SWITCHING DEVICE
CN2006800094337A CN101147242B (zh) 2005-03-28 2006-02-27 半导体集成电路装置用研磨剂、研磨方法及半导体集成电路装置的制造方法
TW095108278A TW200716728A (en) 2005-03-28 2006-03-10 Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing the same
US11/863,852 US7695345B2 (en) 2005-03-28 2007-09-28 Polishing compound for semiconductor integrated circuit device, polishing method and method for producing semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005092608A JP2006278522A (ja) 2005-03-28 2005-03-28 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2006278522A JP2006278522A (ja) 2006-10-12
JP2006278522A5 true JP2006278522A5 (https=) 2007-10-04

Family

ID=37053126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005092608A Withdrawn JP2006278522A (ja) 2005-03-28 2005-03-28 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法

Country Status (7)

Country Link
US (1) US7695345B2 (https=)
EP (1) EP1865546A4 (https=)
JP (1) JP2006278522A (https=)
KR (1) KR20070112778A (https=)
CN (1) CN101147242B (https=)
TW (1) TW200716728A (https=)
WO (1) WO2006103858A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI285668B (en) * 2002-07-22 2007-08-21 Seimi Chem Kk Semiconductor abrasive, process for producing the same and method of polishing
JPWO2006098141A1 (ja) * 2005-03-16 2008-08-21 旭硝子株式会社 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
SG136886A1 (en) 2006-04-28 2007-11-29 Asahi Glass Co Ltd Method for producing glass substrate for magnetic disk, and magnetic disk
JP4836731B2 (ja) 2006-07-18 2011-12-14 旭硝子株式会社 磁気ディスク用ガラス基板の製造方法
EP2061070A4 (en) * 2006-09-11 2010-06-02 Asahi Glass Co Ltd POLISHING AGENT FOR AN INTEGRATED SEMICONDUCTOR ELEMENTS, POLISHING METHOD AND METHOD FOR PRODUCING AN INTEGRATED SEMICONDUCTOR EQUIPMENT
KR101349983B1 (ko) * 2006-09-13 2014-01-13 아사히 가라스 가부시키가이샤 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법
JPWO2010052990A1 (ja) * 2008-11-07 2012-04-05 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
WO2016097915A1 (en) * 2014-12-16 2016-06-23 Basf Se Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium
JP2016154208A (ja) * 2015-02-12 2016-08-25 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
JP6708951B2 (ja) * 2016-03-28 2020-06-10 日立化成株式会社 研磨液及び研磨方法
TWI853798B (zh) * 2017-12-27 2024-09-01 日商霓塔杜邦股份有限公司 研磨用漿料
CN113004799A (zh) * 2019-12-19 2021-06-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
JPH1112561A (ja) 1997-04-28 1999-01-19 Seimi Chem Co Ltd 半導体用研磨剤および半導体用研磨剤の製造方法
KR20050006299A (ko) * 1998-12-25 2005-01-15 히다치 가세고교 가부시끼가이샤 Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 기판의 연마방법
JP2001007061A (ja) 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2001035818A (ja) 1999-07-16 2001-02-09 Seimi Chem Co Ltd 半導体用研磨剤
JP2001185514A (ja) * 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP4195212B2 (ja) * 2000-10-23 2008-12-10 花王株式会社 研磨液組成物
JP2003100752A (ja) * 2001-09-27 2003-04-04 Mitsubishi Electric Corp 半導体装置の製造方法
US6682575B2 (en) * 2002-03-05 2004-01-27 Cabot Microelectronics Corporation Methanol-containing silica-based CMP compositions
CA2484229A1 (en) 2002-05-14 2003-11-27 E.I. Du Pont De Nemours And Company Packaging and containers made of water-soluble polyamides and processes for their manufacture
JP2003347247A (ja) * 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
US6866793B2 (en) * 2002-09-26 2005-03-15 University Of Florida Research Foundation, Inc. High selectivity and high planarity dielectric polishing
TW200424299A (en) * 2002-12-26 2004-11-16 Kao Corp Polishing composition
JP4267348B2 (ja) * 2003-03-05 2009-05-27 花王株式会社 研磨基板の製造方法
JP2004277474A (ja) * 2003-03-13 2004-10-07 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法
JP2005005501A (ja) * 2003-06-12 2005-01-06 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法
KR101123210B1 (ko) * 2003-07-09 2012-03-19 다이니아 케미컬스 오이 화학적 기계적 평탄화용 비-중합성 유기 입자
JP2005038924A (ja) * 2003-07-16 2005-02-10 Sanyo Chem Ind Ltd Ｃｍｐプロセス用研磨液
JP2005048125A (ja) * 2003-07-31 2005-02-24 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法
JP2005048122A (ja) * 2003-07-31 2005-02-24 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法
WO2006086265A2 (en) * 2005-02-07 2006-08-17 Applied Materials, Inc. Method and composition for polishing a substrate
JPWO2006098141A1 (ja) * 2005-03-16 2008-08-21 旭硝子株式会社 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法

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