JP2006278522A - 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法 Download PDF

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Publication number
JP2006278522A
JP2006278522A JP2005092608A JP2005092608A JP2006278522A JP 2006278522 A JP2006278522 A JP 2006278522A JP 2005092608 A JP2005092608 A JP 2005092608A JP 2005092608 A JP2005092608 A JP 2005092608A JP 2006278522 A JP2006278522 A JP 2006278522A
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JP
Japan
Prior art keywords
polishing
abrasive
water
polishing agent
polished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005092608A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006278522A5 (https=
Inventor
Iori Yoshida
伊織 吉田
Yoshinori Kin
喜則 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seimi Chemical Co Ltd
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Seimi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, Seimi Chemical Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP2005092608A priority Critical patent/JP2006278522A/ja
Priority to PCT/JP2006/303648 priority patent/WO2006103858A1/ja
Priority to KR1020077018571A priority patent/KR20070112778A/ko
Priority to CN2006800094337A priority patent/CN101147242B/zh
Priority to EP06714785A priority patent/EP1865546A4/en
Priority to TW095108278A priority patent/TW200716728A/zh
Publication of JP2006278522A publication Critical patent/JP2006278522A/ja
Priority to US11/863,852 priority patent/US7695345B2/en
Publication of JP2006278522A5 publication Critical patent/JP2006278522A5/ja
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2005092608A 2005-03-28 2005-03-28 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法 Withdrawn JP2006278522A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005092608A JP2006278522A (ja) 2005-03-28 2005-03-28 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
PCT/JP2006/303648 WO2006103858A1 (ja) 2005-03-28 2006-02-27 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
KR1020077018571A KR20070112778A (ko) 2005-03-28 2006-02-27 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체집적 회로 장치의 제조 방법
CN2006800094337A CN101147242B (zh) 2005-03-28 2006-02-27 半导体集成电路装置用研磨剂、研磨方法及半导体集成电路装置的制造方法
EP06714785A EP1865546A4 (en) 2005-03-28 2006-02-27 AGING MACHINE FOR AN INTEGRATED SEMICONDUCTOR SWITCHING DEVICE, METHOD FOR POLISHING THEREFOR AND PROCESS FOR PRODUCING AN INTEGRATED SEMICONDUCTOR SWITCHING DEVICE
TW095108278A TW200716728A (en) 2005-03-28 2006-03-10 Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing the same
US11/863,852 US7695345B2 (en) 2005-03-28 2007-09-28 Polishing compound for semiconductor integrated circuit device, polishing method and method for producing semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005092608A JP2006278522A (ja) 2005-03-28 2005-03-28 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2006278522A true JP2006278522A (ja) 2006-10-12
JP2006278522A5 JP2006278522A5 (https=) 2007-10-04

Family

ID=37053126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005092608A Withdrawn JP2006278522A (ja) 2005-03-28 2005-03-28 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法

Country Status (7)

Country Link
US (1) US7695345B2 (https=)
EP (1) EP1865546A4 (https=)
JP (1) JP2006278522A (https=)
KR (1) KR20070112778A (https=)
CN (1) CN101147242B (https=)
TW (1) TW200716728A (https=)
WO (1) WO2006103858A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008032680A1 (en) * 2006-09-11 2008-03-20 Asahi Glass Co., Ltd. Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing semiconductor integrated circuit device
WO2008032681A1 (en) * 2006-09-13 2008-03-20 Asahi Glass Co., Ltd. Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing semiconductor integrated circuit device
JP2009535816A (ja) * 2006-04-27 2009-10-01 キャボット マイクロエレクトロニクス コーポレイション ポリエーテルアミンを含有する研磨組成物
JP2017178986A (ja) * 2016-03-28 2017-10-05 日立化成株式会社 研磨液及び研磨方法
JPWO2019131885A1 (ja) * 2017-12-27 2021-01-14 ニッタ・デュポン株式会社 研磨用スラリー

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* Cited by examiner, † Cited by third party
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WO2004010487A1 (ja) * 2002-07-22 2004-01-29 Seimi Chemical Co., Ltd. 半導体用研磨剤、その製造方法及び研磨方法
CN100578740C (zh) * 2005-03-16 2010-01-06 旭硝子株式会社 半导体集成电路装置用研磨剂、研磨方法及半导体集成电路装置的制造方法
SG136886A1 (en) 2006-04-28 2007-11-29 Asahi Glass Co Ltd Method for producing glass substrate for magnetic disk, and magnetic disk
JP4836731B2 (ja) 2006-07-18 2011-12-14 旭硝子株式会社 磁気ディスク用ガラス基板の製造方法
CN102210012B (zh) * 2008-11-07 2014-12-17 旭硝子株式会社 研磨剂、研磨方法和半导体集成电路装置的制造方法
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JP2018506176A (ja) * 2014-12-16 2018-03-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ゲルマニウムを含む基板の高効率研磨のための化学機械研磨（ｃｍｐ）組成物
JP2016154208A (ja) * 2015-02-12 2016-08-25 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
CN113004799A (zh) * 2019-12-19 2021-06-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液

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JP2001185514A (ja) * 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2002201462A (ja) * 2000-10-23 2002-07-19 Kao Corp 研磨液組成物
JP2003347247A (ja) * 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
JP2004269577A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤
JP2005038924A (ja) * 2003-07-16 2005-02-10 Sanyo Chem Ind Ltd Ｃｍｐプロセス用研磨液
JP2005048125A (ja) * 2003-07-31 2005-02-24 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法

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JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
JPH1112561A (ja) 1997-04-28 1999-01-19 Seimi Chem Co Ltd 半導体用研磨剤および半導体用研磨剤の製造方法
KR100797218B1 (ko) * 1998-12-25 2008-01-23 히다치 가세고교 가부시끼가이샤 Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 기판의 연마방법
JP2001007061A (ja) 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2001035818A (ja) 1999-07-16 2001-02-09 Seimi Chem Co Ltd 半導体用研磨剤
JP2003100752A (ja) * 2001-09-27 2003-04-04 Mitsubishi Electric Corp 半導体装置の製造方法
US6682575B2 (en) * 2002-03-05 2004-01-27 Cabot Microelectronics Corporation Methanol-containing silica-based CMP compositions
US7057008B2 (en) 2002-05-14 2006-06-06 E.I. Du Pont De Nemours And Company Packaging and containers made of water-soluble polyamides and processes for their manufacture
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JP2005005501A (ja) * 2003-06-12 2005-01-06 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法
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JP2005048122A (ja) * 2003-07-31 2005-02-24 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法
WO2006086265A2 (en) * 2005-02-07 2006-08-17 Applied Materials, Inc. Method and composition for polishing a substrate
CN100578740C (zh) * 2005-03-16 2010-01-06 旭硝子株式会社 半导体集成电路装置用研磨剂、研磨方法及半导体集成电路装置的制造方法

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Publication number Priority date Publication date Assignee Title
JP2001185514A (ja) * 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2002201462A (ja) * 2000-10-23 2002-07-19 Kao Corp 研磨液組成物
JP2003347247A (ja) * 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
JP2004269577A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤
JP2005038924A (ja) * 2003-07-16 2005-02-10 Sanyo Chem Ind Ltd Ｃｍｐプロセス用研磨液
JP2005048125A (ja) * 2003-07-31 2005-02-24 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、研磨方法及び半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009535816A (ja) * 2006-04-27 2009-10-01 キャボット マイクロエレクトロニクス コーポレイション ポリエーテルアミンを含有する研磨組成物
WO2008032680A1 (en) * 2006-09-11 2008-03-20 Asahi Glass Co., Ltd. Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing semiconductor integrated circuit device
JPWO2008032680A1 (ja) * 2006-09-11 2010-01-28 旭硝子株式会社 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
WO2008032681A1 (en) * 2006-09-13 2008-03-20 Asahi Glass Co., Ltd. Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing semiconductor integrated circuit device
JPWO2008032681A1 (ja) * 2006-09-13 2010-01-28 旭硝子株式会社 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
JP5157908B2 (ja) * 2006-09-13 2013-03-06 旭硝子株式会社 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
JP2017178986A (ja) * 2016-03-28 2017-10-05 日立化成株式会社 研磨液及び研磨方法
JPWO2019131885A1 (ja) * 2017-12-27 2021-01-14 ニッタ・デュポン株式会社 研磨用スラリー

Also Published As

Publication number Publication date
EP1865546A4 (en) 2009-11-25
KR20070112778A (ko) 2007-11-27
EP1865546A1 (en) 2007-12-12
WO2006103858A1 (ja) 2006-10-05
CN101147242B (zh) 2010-11-17
US7695345B2 (en) 2010-04-13
CN101147242A (zh) 2008-03-19
US20080085663A1 (en) 2008-04-10
TW200716728A (en) 2007-05-01

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