JP2006270036A5 - - Google Patents
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- Publication number
- JP2006270036A5 JP2006270036A5 JP2005296734A JP2005296734A JP2006270036A5 JP 2006270036 A5 JP2006270036 A5 JP 2006270036A5 JP 2005296734 A JP2005296734 A JP 2005296734A JP 2005296734 A JP2005296734 A JP 2005296734A JP 2006270036 A5 JP2006270036 A5 JP 2006270036A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon substrate
- hybrid module
- component
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 253
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 196
- 229910052710 silicon Inorganic materials 0.000 claims description 196
- 239000010703 silicon Substances 0.000 claims description 196
- 229920005989 resin Polymers 0.000 claims description 185
- 239000011347 resin Substances 0.000 claims description 185
- 238000000034 method Methods 0.000 claims description 130
- 238000007789 sealing Methods 0.000 claims description 113
- 238000011068 loading method Methods 0.000 claims description 99
- 230000008569 process Effects 0.000 claims description 90
- 238000004519 manufacturing process Methods 0.000 claims description 59
- 238000005498 polishing Methods 0.000 claims description 41
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 32
- 229910052802 copper Inorganic materials 0.000 claims description 32
- 239000010949 copper Substances 0.000 claims description 32
- 238000007747 plating Methods 0.000 claims description 29
- 230000010354 integration Effects 0.000 claims description 13
- 238000007517 polishing process Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000003566 sealing material Substances 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 8
- 238000005304 joining Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000003014 reinforcing effect Effects 0.000 claims 7
- 238000000347 anisotropic wet etching Methods 0.000 claims 1
- 230000020169 heat generation Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 292
- 230000003287 optical effect Effects 0.000 description 144
- 239000010408 film Substances 0.000 description 48
- 239000000463 material Substances 0.000 description 48
- 238000005530 etching Methods 0.000 description 41
- 230000008054 signal transmission Effects 0.000 description 31
- 230000006870 function Effects 0.000 description 28
- 230000017525 heat dissipation Effects 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 17
- 230000003071 parasitic effect Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000004840 adhesive resin Substances 0.000 description 3
- 229920006223 adhesive resin Polymers 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000010396 two-hybrid screening Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920006124 polyolefin elastomer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005296734A JP4810957B2 (ja) | 2005-02-28 | 2005-10-11 | ハイブリットモジュール及びその製造方法 |
| US11/528,965 US20070080458A1 (en) | 2005-10-11 | 2006-09-27 | Hybrid module and method of manufacturing the same |
| CN2006101411105A CN1949506B (zh) | 2005-10-11 | 2006-10-09 | 混合模块和其制造方法 |
| KR1020060098287A KR20070040305A (ko) | 2005-10-11 | 2006-10-10 | 하이브리드 모듈 및 그 제조 방법 |
| US12/077,486 US7915076B2 (en) | 2005-10-11 | 2008-03-19 | Hybrid module and method of manufacturing the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005054848 | 2005-02-28 | ||
| JP2005054848 | 2005-02-28 | ||
| JP2005296734A JP4810957B2 (ja) | 2005-02-28 | 2005-10-11 | ハイブリットモジュール及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006270036A JP2006270036A (ja) | 2006-10-05 |
| JP2006270036A5 true JP2006270036A5 (https=) | 2008-11-27 |
| JP4810957B2 JP4810957B2 (ja) | 2011-11-09 |
Family
ID=37205613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005296734A Expired - Fee Related JP4810957B2 (ja) | 2005-02-28 | 2005-10-11 | ハイブリットモジュール及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4810957B2 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2917233B1 (fr) * | 2007-06-07 | 2009-11-06 | Commissariat Energie Atomique | Integration 3d de composants verticaux dans des substrats reconstitues. |
| FR2917234B1 (fr) * | 2007-06-07 | 2009-11-06 | Commissariat Energie Atomique | Dispositif multi composants integres dans une matrice semi-conductrice. |
| US8736065B2 (en) * | 2010-12-22 | 2014-05-27 | Intel Corporation | Multi-chip package having a substrate with a plurality of vertically embedded die and a process of forming the same |
| JP6561602B2 (ja) * | 2015-06-09 | 2019-08-21 | 富士通株式会社 | 電子装置の製造方法 |
| CN115298589B (zh) * | 2020-03-19 | 2026-03-20 | 日东电工株式会社 | 光电传输复合模块 |
| JPWO2022030001A1 (https=) * | 2020-08-07 | 2022-02-10 | ||
| JP2022115723A (ja) * | 2021-01-28 | 2022-08-09 | アイオーコア株式会社 | 光電気モジュール |
| WO2023195236A1 (ja) * | 2022-04-08 | 2023-10-12 | ソニーセミコンダクタソリューションズ株式会社 | パッケージおよびパッケージの製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4630096A (en) * | 1984-05-30 | 1986-12-16 | Motorola, Inc. | High density IC module assembly |
| FR2667443A1 (fr) * | 1990-09-28 | 1992-04-03 | Thomson Csf | Procede de realisation d'un module hybride. |
| JP3819483B2 (ja) * | 1996-07-17 | 2006-09-06 | 三洋電機株式会社 | 半導体装置 |
| JP2004079736A (ja) * | 2002-08-15 | 2004-03-11 | Sony Corp | チップ内蔵基板装置及びその製造方法 |
| JP4042555B2 (ja) * | 2002-12-09 | 2008-02-06 | ソニー株式会社 | 半導体回路素子・光学素子混載ハイブリットモジュール及びその製造方法 |
| EP1487019A1 (en) * | 2003-06-12 | 2004-12-15 | Koninklijke Philips Electronics N.V. | Electronic device and method of manufacturing thereof |
-
2005
- 2005-10-11 JP JP2005296734A patent/JP4810957B2/ja not_active Expired - Fee Related
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