JP2006270036A5 - - Google Patents

Description

Hybrid module and manufacturing method thereof

  The present invention is a hybrid in which a plurality of IC (Integrated Circuit) elements, semiconductor circuit elements such as LSI (LargeScalIntegration) elements or memory elements, mounting parts such as electronic components or optical elements are mounted on a silicon substrate, and a wiring layer is provided. The present invention relates to a module and a manufacturing method thereof.

  For example, various electronic devices such as personal computers, mobile phones, video recorders, and audio devices are provided with various IC elements, LSI circuit elements, semiconductor circuit elements such as memory elements, and electronic components. An electronic device includes a so-called hybrid module that is hybridized by mounting, for example, the above-described semiconductor circuit element or electronic component having the same function on a base substrate on which a wiring layer is formed.

  In the hybrid module, many mounting parts are mounted on a silicon substrate or the like based on the downsizing, multi-functionality, or high-functionality of electronic devices, and high-density mounting, miniaturization, lightening, and the like are achieved. . For example, in Patent Document 1 or Patent Document 2, a large number of mounting parts are sealed in a resin base so that the respective input / output part forming surfaces form the same surface, and the main surface of the resin base is A hybrid module in which a wiring layer is formed is disclosed. In such a hybrid module, other components can be mounted on each mounted component via a wiring layer, thereby realizing high-density mounting while reducing the thickness.

  On the other hand, in an electronic device or the like, generally, signal transmission between each mounted component mounted in a board is performed by a wiring pattern formed in a wiring layer. In electronic devices and the like, higher speed processing is required, but in electrical signal transmission using wiring patterns, there are limits to miniaturization of wiring patterns, and signals based on CR (Capacitance-Resistance) time constants generated in wiring patterns. It is extremely difficult to cope with problems such as transmission delay, EMI (Electromagnetic Interference), EMC (Electromagnetic Compability), or crosstalk between wiring patterns.

  In electronic devices, optical signal transmission paths (optical buses), optical interconnections, etc. can be used to solve the above-mentioned problems caused by the electrical signal transmission structure and realize higher speed, multi-function, higher functionality, etc. Adoption of an optical signal transmission structure provided with optical components is being studied. The optical signal transmission structure is suitable for signal transmission at a relatively short distance between devices, between boards mounted on each device, or between mounted components in each board. The optical signal transmission structure makes it possible to form an optical signal transmission path on a wiring board on which mounting components are mounted, and to transmit an optical signal at a high speed and a large capacity using the optical signal transmission path as a transmission path. An optical element mixed hybrid module is disclosed in Patent Document 3, for example.

Japanese Patent Laid-Open No. 7-7134 JP 2000-106417 A JP 2004-193221 A

The hybrid modules disclosed in Patent Document 1 and Patent Document 2 described above have a plurality of mounting components such as semiconductor chips and functional devices mounted side by side on a base sheet supported by the base, and these mounting components are sealed. In this manner, the substrate body is formed of the resin on the base sheet. In such a hybrid module, the contact pads of each mounting component constitute substantially the same surface, so that each mounting component can be connected to a circuit board or the like at the same time, and the board body can have a maximum external dimension. overall the Rukoto be polished in accordance with the mounted components becomes thinner is achieved.

  However, since such a hybrid module has a structure in which a plurality of mounting components are sealed by a substrate body formed of resin, curing shrinkage occurs when the resin cures, resulting in a large dimensional change in the substrate body. End up. In a hybrid module, a phenomenon such as a large warp occurs in the board body, which causes the connection pads of each mounting component to be misaligned with respect to the mounting land on the circuit board side, and disconnection occurs at the connection site. There is a problem that mounting accuracy deteriorates due to such as. In addition, in the hybrid module, cracks are generated in the outer peripheral portion of each mounted component due to stress due to thermal deformation, resulting in a decrease in reliability due to a decrease in mounting strength, an internal short circuit or rust generation due to moisture penetration, etc. There was also.

  On the other hand, in the hybrid module, by providing an optical signal transmission structure as disclosed in Patent Document 2 described above, higher speed, multiple functions, higher functions, and the like can be achieved. In the hybrid module, an electrical signal input / output from an LSI element or the like that has been increased in processing speed and capacity is converted into an optical signal by an optical element such as a semiconductor laser, a light emitting diode, or a photodetector. Therefore, in the hybrid module, there is also provided an electric / optical signal mixed type hybrid module in which an optical signal transmission structure is mixed with an electric signal transmission structure.

  In the hybrid module of electrical / optical hybrid type, signal transmission delay due to the above-mentioned CR time constant in the electrical signal transmission structure, reduction of EMI noise, EMC, etc., along with the speeding up of signal transmission through the optical signal transmission structure It is extremely important to reduce the parasitic capacitance due to the above. In the hybrid module for electric / light hybrid type, heat may be generated when the optical component performs an electric / optical conversion operation, which may affect the characteristics of the mixed electric component.

  Therefore, in an electric / light hybrid type hybrid module, optical components and optical signal transmission paths are generally mounted on the main surface of a wiring layer, a circuit board, and the like in a separate process. In the hybrid module of electric / light hybrid type, there is a problem that the mounting process becomes complicated and low efficiency and the yield is lowered by mounting the electrical component and the optical component in separate processes. In an electric / light hybrid type hybrid module, an electric wiring pattern for connecting the electric component and the optical component to each other is also required, which makes it difficult to realize a low parasitic capacitance.

  Therefore, the present invention provides a hybrid module capable of mounting a large number of mounting components in a thin shape, and improving the mounting accuracy and mounting efficiency as well as the reliability and a method for manufacturing the same. Objective.

A hybrid module according to the present invention that achieves the above-described object includes a silicon substrate having a plurality of component loading openings formed of through-openings, and each input / output portion forming surface in each component loading opening. A plurality of mounting components that are loaded so as to form substantially the same surface as the first main surface, and a sealing material that is filled in each of the component loading openings, and each mounting component is provided with an input / output portion forming surface. A sealing resin layer embedded and fixed in each component loading opening while being exposed on the first main surface of the silicon substrate, and formed on the first main surface of the silicon substrate and exposed from the first main surface. It is comprised from the wiring layer which has a wiring pattern connected with the input / output part provided in each input / output part formation surface of each mounting component.

  In a hybrid module, a silicon substrate is used as a base substrate, so that high-precision component loading openings and wiring layers can be formed relatively easily and there is almost no change in size or shape due to the influence of heat or the like. The mounting components are positioned with high accuracy and the connection state with the wiring layer or the like is reliably held and mounted, whereby the reliability is improved. In the hybrid module, the silicon substrate functions as a ground for each mounted component and wiring layer and also has a heat dissipation function, so that a stable functional operation is achieved. In the hybrid module, each mounting component having a different external dimension is mounted in a state where the respective input / output part forming surfaces constitute the same surface and are embedded in the silicon substrate. In addition, the parasitic capacitance is reduced by connecting each mounting component and the wiring layer with vias in the shortest way without using bumps or the like.

The method for manufacturing a hybrid module according to the present invention that achieves the above-described object includes a component loading in which a plurality of component loading openings including through openings penetrating through a first main surface and a second main surface are formed in a silicon substrate. A silicon substrate processing step having an opening forming step, and a mounting component in which each input / output portion forming surface constitutes substantially the same surface as the first main surface of the silicon substrate in each component loading opening to integrate the mounting components. An integration step and a wiring layer forming step of forming a wiring layer by covering each mounting component on the main surface of the silicon substrate. A hybrid module is manufactured that is exposed in a state of substantially the same surface as one main surface and is embedded in each component loading opening.

In the hybrid module manufacturing method, the mounting component integration process includes a silicon substrate mounting process, a mounting part loading process, a sealing resin layer forming process, and a peeling process. In the hybrid module manufacturing method, in the silicon substrate mounting step, the silicon substrate is bonded onto the dummy substrate with the first main surface as the bonding surface, and the opening on the first main surface side of each component loading opening is closed. Like that. In the method for manufacturing a hybrid module, in the mounting component loading step, each mounting component is placed on the silicon substrate from the opening on the second main surface side into each component loading opening with the input / output portion forming surface as the loading side. By being loaded, the input / output unit forming surfaces are formed on the dummy substrate so as to form substantially the same surface. Method for manufacturing a hybrid module, in the encapsulating resin layer forming step, each sealing resin is cured by subjecting to a curing treatment in this sealing material after filling a sealing resin material such as an adhesive resin to the parts loading opening A layer is formed, and each mounting component is embedded and fixed in each component loading opening by these sealing resin layers. In the method of manufacturing the hybrid module, in the peeling process, the silicon substrate is peeled off from the dummy substrate, so that each input / output part forming surface is substantially the same as the first main surface, and each mounted component has its respective component loading opening. An intermediate embedded in the part is manufactured.

  In the method of manufacturing a hybrid module, a silicon substrate that hardly changes in shape or state due to heat is used as a base substrate, and a plurality of component loading openings formed on a silicon substrate with high accuracy and efficiency by, for example, etching, etc. It is possible to accurately position and integrate the mounted components. In the method for manufacturing a hybrid module, a hybrid module is manufactured in which the connection state between each mounted component and a wiring layer or the like is reliably maintained, and the occurrence of disconnection or the like is suppressed, thereby improving the reliability. In the method for manufacturing a hybrid module, the silicon substrate functions as a ground for each mounted component and wiring layer and also has a good heat dissipation function, so that a hybrid module that exhibits stable functional operation is manufactured. In the hybrid module manufacturing method, each mounted component is mounted in a state of being embedded in a silicon substrate, so that the size and thickness can be reduced, and the parasitic capacitance is reduced by connecting each mounted component and the wiring layer in the shortest possible time. In addition, a hybrid module that can achieve multiple functions and high functions by high-density mounting is efficiently manufactured.

According to the present invention, the mounting component is integrated with the sealing resin layer embedded so that the input / output portion forming surface forms substantially the same surface as the main surface in the component loading opening formed in the silicon substrate. A hybrid layer is formed by forming a wiring layer electrically connected to each mounting component on the main surface of the silicon substrate. Therefore, according to the present invention, it is possible to obtain a hybrid module that is reduced in size and thickness, and has a reduced parasitic capacitance by connecting each mounted component and the wiring layer in the shortest distance. According to the present invention, each mounted component is positioned and integrated with high precision and is formed between the wiring layers by using a silicon substrate that is hardly changed in size or shape due to the influence of heat or the like as a base substrate. It is possible to obtain a highly accurate hybrid module that suppresses occurrence of disconnection or the like. According to the present invention, the silicon substrate functions as a power supply unit and a ground unit for each mounted component and wiring layer and also has a good heat dissipation function. Therefore, stable functional operation is achieved and reliability is improved. A hybrid module can be obtained.

  Hereinafter, a hybrid module 1 shown in the drawings and a hybrid circuit device 2 equipped with the hybrid module 1 will be described as embodiments of the present invention. As shown in FIG. 1, the hybrid module 1 includes a plurality of mounting components 4A and 4D (hereinafter collectively referred to as mounting components 4 unless otherwise described), and sandwiches a silicon substrate 3 between them. The wiring layer 5 is formed on the first main surface 3A and the heat dissipation plate 6 is joined to the second main surface 3B. As will be described in detail later, the hybrid module 1 can be thinned by using a silicon substrate 3 that has been polished to a thickness that is slightly larger than the thickness of the mounting component 4.

  As shown in FIG. 2, the hybrid module 1 constitutes the hybrid circuit device 2 by being mounted on a base substrate portion 7 whose details will be described later with the wiring layer 5 as a mounting surface. In the hybrid circuit device 2, the base substrate portion 7 is mounted on a mother board, an interposer or the like, and is provided in, for example, a personal computer, a mobile phone, or various electronic devices. By providing the hybrid module 1, the hybrid circuit device 2 includes an electrical wiring structure that transmits and receives electrical control signals and data signals or power supply, and an optical wiring structure that transmits and receives optical control signals and data signals. In addition, control signals and data signals are processed at high speed and capacity.

  The hybrid module 1 mounts an electronic component such as the first LSI 4A, the second LSI 4B, or the semiconductor element 4C and a mounting component 4 such as the optical element 4D, which perform related operations, on the silicon substrate 3. The first LSI 4A and the second LSI 4B are LSIs with a multi-pin configuration that are not described in detail but have been increased in speed and capacity. The semiconductor element 4C is an electronic component such as a semiconductor memory, various semiconductor devices, or a decoupling capacitor. The optical element 4D is a light emitting element such as a semiconductor laser or a light emitting diode, or a light receiving element such as a photodetector, which emits an optical signal under the control of the first LSI 4A, the second LSI 4B, or the semiconductor element 4C. Needless to say, the optical element 4D may be a composite optical element having a light emitting function and a light receiving function.

  The hybrid module 1 includes a first component loading opening 8A to a fourth component loading opening 8D formed by the mounting component 4 in the silicon substrate 3 as will be described later (hereinafter, the component loading opening unless otherwise described). 8) and embedded in first sealing resin layer 9A to fourth sealing resin layer 9D (hereinafter collectively referred to as sealing resin layer 9 unless otherwise described). And integrated with the silicon substrate 3. In the hybrid module 1, one representative mounting component 4 is shown, but it goes without saying that a predetermined number may be provided.

  The mounting component 4 has a predetermined number of input / output electric signals whose details are omitted from the first main surfaces 10A to 10D (hereinafter collectively referred to as the input / output portion forming surface 10 unless otherwise described). Input / output pads 11 </ b> A to 11 </ b> D (hereinafter collectively referred to as input / output pads 11 except when individually described) are formed to form the input / output portion forming surface 10. Since the mounting components 4 are different types (different characteristics) as described above, they have different sizes and different specifications.

  As will be described later, the mounting component 4 is loaded into the component loading opening 8 facing each other with the input / output portion forming surface 10 as a loading surface. The mounting component 4 has a heat radiation plate 6 laminated on the second main surfaces 12A to 12D (hereinafter collectively referred to as the bottom surface 12 unless otherwise described) facing the input / output portion forming surface 10. The optical element 4D is provided with an optical signal input / output unit 13 including an output unit for emitting an optical signal or a light receiving unit for receiving an optical signal together with the input / output pad 11D on the input / output unit forming surface 10D.

  In the hybrid module 1, a mounting component 4 that generates heat, such as the first LSI 4 </ b> A, the second LSI 4 </ b> B, or the optical element 4 </ b> D, is embedded in the silicon substrate 3 with a sealing resin layer 9. In order for the hybrid module 1 to efficiently transmit the heat generated from these mounting components 4 to the heat radiating plate 6 to perform heat dissipation, the individual heat radiating plates 14A, 14B, and 14D (hereinafter referred to as the heat radiating plates 14A, 14B, 14D) Except when individually described, it is generally referred to as an individual heat dissipating plate 14).

  The individual heat dissipating plate 14 is a metal plate that is equal to or slightly larger than the mounting component 4 (4A, 4B, 4D), light weight, and high thermal conductivity, such as a metal plate such as a copper plate or an aluminum plate, or a silicon plate. Is used. The individual heat dissipating plate 14 is joined to the bottom surface 12 of the mounting component 4 facing each other by insulating adhesives 15A, 15B, and 15D. The individual heat radiating plate 14 may have a thickness protruding from the opening of the component loading opening 8 in a state of being joined to the mounting component 4, and the second heat radiating plate 14 and the second main surface 3 </ b> B of the silicon substrate 3 by a polishing process described later. It is polished and thinned until it forms substantially the same surface. The individual heat radiation plate 14 is joined to the mounting component 4 by the insulating adhesives 15A, 15B, and 15D, but may be joined by an appropriate joining method such as anodic joining.

  The silicon substrate 3 is subjected to an etching process, which will be described in detail later, and is loaded with mounting components 4 which are respectively opened in the first main surface 3A and the second main surface 3B while penetrating in the thickness direction. The above-described component loading opening 8 having a sufficient opening size is formed. Since the silicon substrate 3 is thinned by polishing to a predetermined thickness in advance as described above, each component loading opening 8 can be efficiently and accurately formed. The silicon substrate 3 is subjected to a polishing process on the bottom surface with a recess corresponding to the component loading opening 8 formed from the second main surface 3B side to a predetermined depth so as to penetrate the component loading opening 8. The first main surface 3A may be formed.

  The component loading opening 8 is formed in the silicon substrate 3 as a trapezoidal opening having a large diameter on the second main surface 3B side serving as an etching surface and gradually becoming a small diameter toward the first main surface side 3A side. . The component loading opening 8 allows the sealing resin material, which is filled from the second main surface 3 </ b> B side and forms the sealing resin layer 9, to flow into the outer peripheral portion of the mounted component 4 inside.

  The sealing resin layer 9 is made of, for example, a thermosetting adhesive resin material such as an epoxy resin, and is formed by subjecting the adhesive resin material filled in the component loading opening 8 to a curing process. Inside, the mounting component 4 is integrated with the silicon substrate 3. As will be described in detail later, the sealing resin layer 9 is formed with a sufficient thickness so as to wrap the entire mounting component 4 to which the silicon substrate 3 and the individual heat dissipation plate 14 are joined, and then individually until the second main surface 3B is exposed. It is polished together with the heat radiating plate 14.

  In the hybrid module 1, the mounting component 4 is formed on the first main surface 3 </ b> A of the silicon substrate 3 while the input / output portion forming surfaces 10 constitute the same surface as shown in FIG. On the other hand, it forms the same surface and is embedded and integrated in the component loading opening 8 by the sealing resin layer 9. In the hybrid module 1, the mounting component 4 is exposed from the sealing resin layer 9 on the first main surface 3 </ b> A side so that the input / output portion forming surface 10 is exposed outward from the opening of the component loading opening 8. The structure is directly connected to a wiring layer 5 (described later) formed on the first main surface 3A of the silicon substrate 3.

  In the silicon substrate 3, a conductive layer 16 having a thickness substantially equal to the height of the input / output pad 11 of the mounting component 4 is formed on the first main surface 3 </ b> A. The conductive layer 16 is formed of, for example, a copper film, and the silicon substrate 3 and the wiring layer 5 are electrically and reliably connected so that the silicon substrate 3 efficiently functions as a power supply unit or a ground unit. Specifically, in the hybrid module 1, the input / output pad 11 provided on the input / output portion forming surface 10 and the conductive layer 16 formed on the first main surface 3A constitute substantially the same surface, and the mounting component 4 is made of silicon. Embedded in the component loading opening 8 of the substrate 3. Of course, the hybrid module 1 does not need to form the conductive layer 16 described above.

  In the hybrid module 1, the wiring layer 5 is laminated on the first main surface 3 </ b> A of the silicon substrate 3 so as to cover the mounting component 4. The wiring layer 5 is formed by a general multilayer wiring technique, and includes a first insulating resin layer 17A and a second insulating resin layer 17B (hereinafter collectively referred to as an insulating resin layer 17 unless otherwise described). One wiring pattern 18A and second wiring pattern 18B (hereinafter collectively referred to as wiring pattern 18 unless otherwise described), and a plurality of first vias 19A and second vias 19B (hereinafter individually described). Except for the case, it is generally referred to as via 19.) The wiring layer 5 is formed of a copper pattern in which the wiring pattern 18 and the via 19 are subjected to copper plating. The wiring layer 5 is provided with a large number of bumps 20 at appropriate positions on the surface 5 </ b> A serving as a mounting surface to the base substrate portion 7. In the wiring layer 5, the two-layer wiring pattern 18 is formed on the insulating resin layer 17, but it goes without saying that one or more multilayer wiring patterns 18 may be formed.

In the wiring layer 5, the insulating resin layer 17 is made of an insulating resin material having photosensitive light transmission as an insulating resin material , such as an epoxy resin, a polyimide resin, an acrylic resin, a polyolefin resin, or a rubber resin. It is formed. The insulating resin layer 17 may be made of a benzocyclobutene resin having an optical transparency excellent in high frequency characteristics as an insulating resin material .

  In the wiring layer 5, the first via 19A and the first wiring pattern 18A are formed in the first insulating resin layer 17A, and the second via 19B and the second wiring pattern 18B are formed in the second insulating resin layer 17B. Is done. As will be described later, the wiring layer 5 conducts a conductive treatment on a large number of first via holes 21A formed in the first insulating resin layer 17A with the input / output pads 11 and the conductive layer 16 of the mounting component 4 facing outward. The first via 19A is formed, and the input / output pad 11 and the conductive layer 16 are directly connected to the first wiring pattern 18A through the first via 19A.

  In the wiring layer 5, the first insulating resin layer 17B is formed on the first insulating resin layer 17A by covering the first wiring pattern 18A. In the wiring layer 5, the second via 19 </ b> B is formed by conducting a conductive process on the multiple second via holes 21 </ b> B formed in the second insulating resin layer 17 </ b> B with the lands of the first wiring pattern 18 </ b> A facing outward. The The wiring layer 5 directly connects the first wiring pattern 18A and the second wiring pattern 18B through the second via 19B.

  As described above, the hybrid module 1 has a structure in which the mounting component 4 embedded in the silicon substrate 3 and the wiring pattern 18 of the wiring layer 5 are directly connected by the vias 19 without using bumps or the like. Therefore, in the hybrid module 1, the wiring is shortened and the parasitic capacitance in the connection portion is reduced, and the characteristics are improved by delay of signal transmission due to the CR time constant, reduction of EMI noise, EMC, and the like.

  Further, in the hybrid module 1, the wiring layer 5 is formed on the first main surface 3A of the flattened silicon substrate 3 as described later. Therefore, in the hybrid module 1, it is possible to form a fine and highly accurate wiring layer 5 by a so-called semiconductor process, and a thin film passive element such as a capacitor element, a resistor element or an inductor element can be formed in the layer. Is possible. In the hybrid module 1, these passive elements, which have been conventionally handled by chip components, are formed in the wiring layer 5, whereby the wiring can be further shortened, downsized, or mounted with high density.

As described above, the wiring layer 5 forms the insulating resin layer 17 with an insulating resin material having optical transparency, so that the insulating resin layer 17 is configured as an optical signal transmission path for the optical element 4D. That is, in the wiring layer 5, the portion facing the optical signal input / output unit 13 of the optical element 4 </ b> D is a portion where the wiring pattern 18 is not formed over the entire area in the thickness direction in the insulating resin layer 17. 5B is configured.

  In the wiring layer 5, as indicated by an arrow in FIG. 1, an optical signal emitted from the optical signal input / output unit 13 of the optical element 4D is transmitted through the optical signal transmission path 5B and emitted from the surface 5A. To do. The wiring layer 5 allows an optical signal incident from the surface 5A to pass through the optical signal transmission path 5B and be received by the optical signal input / output unit 13 of the optical element 4D. In the hybrid module 1, a part of the wiring layer 5 is configured as the optical signal transmission path 5B. However, in order to transmit the optical signal more efficiently, the hybrid module 1 faces the optical signal input / output unit 13 of the optical element 4D. An optical waveguide member covered with a clad material using a light guide member formed of a transparent resin material as a core material may be provided.

  The bumps 20 are formed on the lands of the second wiring pattern 18B to have a predetermined height, for example, by gold plating, and the hybrid module 1 is flip-chip mounted on the base substrate portion 7 to obtain the structure shown in FIG. The hybrid circuit device 2 shown is manufactured. The bump 20 may be an appropriate structure depending on the mounting method of the hybrid module 1 on the base substrate portion 7, and may be, for example, a solder ball or a metal ball provided on the land of the second wiring pattern 18B.

  The heat radiating plate 6 is formed of a light metal plate having a high thermal conductivity, such as a metal plate such as a copper plate or an aluminum plate, or a silicon plate, and is bonded to the entire surface of the second main surface 3B of the silicon substrate 3 by an adhesive layer 22. The As described above, the heat radiating plate 6 is flattened by polishing the individual heat radiating plate 14 bonded to the second main surface 3B of the silicon substrate 3 and the mounting component 4, so that the heat radiating plate 6 is in close contact with the entire surface. It joins in a state and efficient heat conduction comes to be performed.

  By the way, the component loading opening 8 is formed in a substantially trapezoidal cross section with the second main surface 3B side having a large diameter as described above, and the silicon substrate 3 is made thin. For example, the sealing resin is sufficiently cured. For example, the bonding force between the sealing resin layer 9 and the silicon substrate 3 may be weakened, and the mounting component 4 may be dropped or displaced together with the sealing resin layer 9 from the inside during the polishing process. The heat radiating plate 6 is bonded to the silicon substrate 3 so as to close the component loading opening 8 on the second main surface 3B side, whereby the mounting component 4 and the sealing resin layer 9 are placed in the component loading opening 8. Hold securely. Further, the heat radiation plate 6 is lined with a thin silicon substrate 3 so that the mechanical rigidity is maintained.

  In the hybrid module 1, the individual heat radiating plate 14 is joined to the mounting component 4 and the heat radiating plate 6 is joined to the silicon substrate 3 to configure the heat radiating structure generated from the mounting component 4. If the generated heat is not so large, there is no need to provide it. Further, in the state where the hybrid module 1 is mounted on the base substrate portion 7 to constitute the hybrid circuit device 2, the heat spreader 23 is joined to the heat radiating plate 6 as shown in FIG. You may do it.

  In the hybrid module 1, the mounting components 4 embedded in the silicon substrate 3 are electrically connected to each other via the wiring pattern 18 of the wiring layer 5 as described above. In the hybrid module 1, power is supplied to the light emitting element 4D via the wiring layer 5, and the light emitting element 4D converts an electrical signal output from the first LSI 4A or the second LSI 4B into an optical signal, It is converted into an electric signal and supplied to the first LSI 4A and the second LSI 4B. In the hybrid module 1, the electronic components such as the first LSI 4A and the second LSI 4B and the optical element 4D are arranged close to each other and are electrically connected by the wiring pattern 18 shortened by being formed in the same layer. Therefore, in the hybrid module 1, the electrical connection portion has a low parasitic capacitance, and high-speed and high-capacity processing of data signals and control signals is achieved.

  In the hybrid module 1, the input / output unit forming surfaces 10 are formed in the component loading opening 8 so that the input / output unit forming surfaces 10 are substantially the same as the first main surface 3A. The mounting component 4 is embedded and integrated as configured. The hybrid module 1 includes a plurality of mounting parts 4 having different sizes. With this configuration, the hybrid module 1 can be reduced in size and thickness, and can be multi-functional and highly functional by high-density mounting. It becomes possible.

  In the hybrid module 1, the mounting component 4 is integrated with the silicon substrate 3 that hardly changes in size and shape due to the influence of heat or the like as a base substrate, so that the mounting component 4 is positioned and mounted with high accuracy. Occurrence of disconnection or the like between the wiring layer 5 is suppressed. In the hybrid module 1, the silicon substrate 3 functions as a ground for the mounting component 4 and the wiring layer 5 and also has a good heat dissipation function, so that a stable functional operation is achieved and reliability is improved. Become.

  As shown in FIG. 2, the hybrid module 1 configured as described above has the surface 5A of the wiring layer 5 as a mounting surface, and the bump 20 is positioned and bonded to the land of the base wiring board 25 facing the other. The hybrid circuit device 2 is configured by being mounted on the base substrate portion 7 together with the electronic component 24. The hybrid circuit device 2 is shown in which two hybrid modules 1A and 1B are mounted on the base substrate portion 7 and a heat spreader 23 is joined to the hybrid module 1A side as shown in FIG. One or more ones may be mounted and a large number of electronic components 24 may be mounted.

  The hybrid circuit device 2 is configured by mounting an optical waveguide member 26 on a base wiring board 25 manufactured by a conventionally known multilayer wiring board technique. The base wiring board 25 forms, for example, a multilayer wiring pattern constituting a base wiring layer through an insulating layer using an organic substrate such as glass epoxy or an inorganic substrate such as ceramic as a base material, and between the wiring patterns of each layer. Layers are connected by vias. The base wiring board 25 is manufactured by an appropriate multilayer wiring board technique such as bonding a double-sided board through a prepreg, for example.

  The base wiring board 25 is formed with lands for mounting the hybrid modules 1A and 1B and the electronic component 24 on the uppermost wiring pattern, although details are omitted, and these mounting components are electrically connected by the wiring pattern of each layer. To do. A power supply pattern or a ground pattern having a relatively large area for supplying power to the hybrid module 1 is formed on the base wiring board 25, and highly regulated power supply is supplied to the hybrid module 1.

  The hybrid circuit device 2 includes, for example, a light emitting element as the optical element 4D on the first hybrid module 1A side and a light receiving element as the optical element 4D on the second hybrid module 1B side. The hybrid circuit device 2 allows an electrical signal to be exchanged between the first hybrid module 1A and the second hybrid module 1B by the wiring pattern of the base wiring board 25, and the optical element on the second hybrid module 1B side. The optical signal emitted from 4D is received by the optical element 4D on the first hybrid module 1A side to be exchanged. In the hybrid circuit device 2, a large number of electrode pads are formed on the bottom surface side of the base wiring board 25, and bumps are provided on these electrode pads so as to be mounted on a mother board or the like (not shown).

An insulating protective layer 27 is formed on the main surface of the base wiring board 25 on which the hybrid module 1 is mounted. The base wiring board 25 has a large number of lands formed in the wiring pattern facing the opening formed in the insulating protective layer 27 corresponding to the above-described bump 20 of the hybrid module 1. The hybrid module 1 is positioned and assembled to the base wiring board 25, and the bumps 20 are bonded onto the lands from the opposed openings. The insulating protective layer 27, and an optical element 4D and the optical waveguide member 2 6 hybrid module 1 as described below from the optically coupled, is formed by an insulating resin material having optical transparency.

  In the base substrate portion 7, an optical waveguide member 26 is provided in the insulating layer of the base wiring substrate 25 so as to face the hybrid modules 1 </ b> A and 1 </ b> B mounted adjacent to each other. As is well known, the optical waveguide member 26 is made of a light guide material formed of a light-transmitting resin such as polyimide resin, epoxy resin, acrylic resin, polyolefin resin, or rubber resin, with a different optical refractive index. It is configured to be sealed by a clad layer. The optical waveguide member 26 constitutes an optical confinement optical waveguide that transmits an optical signal in a two-dimensional or three-dimensionally confined state.

  Although not described in detail, the optical waveguide member 26 is configured as a mirror surface in which both end portions constituting the incident portion and the emission portion are cut at 45 °, and converts the optical path of the optical signal guided inside by 90 °. . In the state where the hybrid modules 1A and 1B are mounted on the base substrate portion 7, the optical waveguide member 26 has both ends at the optical signal transmission paths 5B of the respective wiring layers 5, in other words, the optical signal input / output portion of the optical element 4D. 13 is opposed. Accordingly, the optical waveguide member 26, for example, allows an optical signal emitted from the optical element (light emitting element) 4D of the hybrid module 1A to enter from one end portion, guide the inside, and emit from the other end side to emit from the other end side. The optical element (light receiving element) 4D receives light.

  The hybrid circuit device 2 configured as described above is a hybrid module that is small and thin as described above and performs highly accurate and stable operation that can achieve multiple functions and high functionality by high-density mounting. 1 is mounted on a base substrate portion 7. In the hybrid circuit device 2, the generation of deformation due to heat or the like is suppressed when the hybrid module 1 uses the silicon substrate 3 as the base substrate, so that the occurrence of disconnection or cracks at the connection portion with the base substrate portion 7 is suppressed. Therefore, the reliability is improved.

In the hybrid circuit device 2, the hybrid modules 1 A and 1 B mounted on the base substrate unit 7 connect the electronic components such as the first LSI 4 A, the second LSI 4 B, or the semiconductor element 4 C and the optical element 4 D through the wiring layer 5 in a precise and shortest manner. As a whole, the parasitic capacitance is reduced by being electrically connected, and an optical signal is transmitted between the hybrid modules 1A and 1B via the optical element 4D and the optical waveguide member 26 at high speed. The transmission should be made with increased capacity.

The manufacturing process of the hybrid module 1 configured as described above will be described below. The manufacturing process of the hybrid module 1 manufactures the hybrid module 1 through a silicon substrate processing process, a mounting component integration process, and a wiring layer formation process. The silicon substrate processing step is a step of manufacturing the silicon substrate 3 by performing predetermined processing on a silicon substrate material 28 equivalent to a silicon wafer used in a general semiconductor manufacturing process supplied to the process. A polishing process for polishing the substrate material 28 to a predetermined thickness, a component loading opening forming process for forming the component loading opening 8, a conductive layer forming process for forming the conductive layer 16, and the like.

The mounting component integration process is a process in which the mounting component 4 is embedded and integrated in the silicon substrate 3 formed by polishing the silicon substrate material 28 to a predetermined thickness. The dummy substrate is formed on the silicon substrate 3 via the release film 29. A dummy substrate bonding step for bonding 30, a mounting component loading step for loading the mounting component 4 into the component loading opening 8, a sealing resin layer forming step for forming the sealing resin layer 9, and the sealing resin layer 9 The intermediate 31 is manufactured through a sealing resin layer polishing step for polishing the substrate to a predetermined thickness, a heat dissipation plate bonding step for bonding the heat dissipation plate 6, a dummy substrate peeling step for peeling the dummy substrate 30, and the like. The manufacturing process of the hybrid module 1 completes the hybrid module 1 through a wiring layer forming process for forming the wiring layer 5 on the intermediate 31.

Silicon substrate processing steps, a slightly greater thickness than the height from the use of a general-purpose silicon substrate material 28, the silicon substrate material 28 to mount components 4 with relatively thick as illustrated in FIG. 3 by the grinding process as described above The silicon substrate 3 is manufactured by polishing up to the above. Of course, it is not necessary to carry out the polishing process when the silicon substrate 3 having a predetermined thickness is supplied to the process.

  In the silicon substrate processing step, the silicon substrate 3 is etched in the component loading opening forming step to form a plurality of component loading openings 8 at once. The component loading opening forming process includes a silicon etching film forming process for patterning the silicon etching film 32 on the second main surface 3B of the silicon substrate 3, and an etching process for performing an etching process from the second main surface 2B side. In the manufacturing process of the hybrid module 1, a conductive layer forming process is performed in a process preceding the etching process, and the conductive film 16 is formed on the first main surface 3 </ b> A of the silicon substrate 3.

In the silicon etching film forming step, the portions corresponding to the respective component loading openings 8 are masked on the second main surface 3B of the silicon substrate 3, and for example, silicon dioxide (SiO ₂ ), silicon nitride (SixNy) or the like is used. A silicon etching film 32 is formed. In the silicon etching film forming step, a silicon dioxide film is formed on the silicon substrate 3 by a silicon thermal oxidation process, or a silicon dioxide film or a silicon nitride film is formed by a chemical vapor deposition (CVD) or sputtering method. Is deposited.

  In the silicon etching film forming step, openings 33A to 33D were formed on the second main surface 3B of the silicon substrate 3 in accordance with the above-described processing, as shown in FIG. A silicon etching film 32 is formed. In the silicon etching film forming step, for example, after the silicon etching film 32 is formed over the entire surface of the second main surface 3B of the silicon substrate 3, the portions where the component loading openings 8 are formed are removed and the openings 33 are formed. May be formed. In the silicon etching film forming step, the silicon etching film 32 may be formed by other so-called patterning technology.

  The conductive film forming process is performed in a post-process or a pre-process of the silicon etching film forming process, and the conductive film 16 is formed over the entire surface of the first main surface 3A of the silicon substrate 3. In the conductive layer forming step, the copper thin film layer having the predetermined thickness described above is formed on the entire surface of the first main surface 3A by an appropriate method such as sputtering or electroless plating. In the conductive layer forming step, a conductive film 16 having etching resistance characteristics that is not removed by an etching process applied to the silicon substrate 3 described later is formed. Note that the conductive layer forming step may be performed after the etching step when the conductive film 16 cannot sufficiently secure the etching resistance characteristics depending on the content of the etching process. Of course, the conductive layer forming step is not performed when the conductive film 16 is unnecessary as described above.

In the etching process, the silicon substrate 3 exposed in the openings 33A to 33D of the silicon etching film 32 is etched until it reaches the conductive film 16, thereby collectively forming a plurality of component loading openings 8 as shown in FIG. Form. In the etching step, as described above, for example, when a substrate having a surface orientation of 100 is used as the silicon substrate material 28 for forming the silicon substrate 3, an anisotropic etching process using an alkaline etching solution such as KOH or TMAH is performed. Thus, the part loading opening 8 having a trapezoidal cross section is formed. In the etching process, isotropic etching may be performed if the orientation of the silicon substrate material 28 is different, or the component loading opening 8 may be formed by a dry etching method.

  In the silicon substrate processing step, the silicon etching film 32 remains on the second main surface 3B of the silicon substrate 3, but the silicon etching film 32 is removed by a polishing step described later. In the silicon substrate processing step, depending on the polishing conditions, the silicon etching film 32 may be removed in advance by performing the silicon etching film removing step without polishing up to the silicon etching film 32.

  In the silicon substrate processing step, as shown in FIG. 5, since the component loading opening 8 is closed by the conductive layer 16 formed on the first main surface 3A side of the silicon substrate 3, this portion of the conductive layer 16 is removed. A conductive layer processing step is performed. In the conductive layer processing step, by removing a part of the conductive layer 16 by an appropriate method such as a wet etching method or a dry etching method, the silicon substrate 3 that opens also on the first main surface 3A side as shown in FIG. A part loading opening 8 is formed.

  In the mounting component integration step, the mounting component 4 is combined and integrated with the silicon substrate 3 manufactured through the above-described silicon substrate processing step. In the mounting component integration step, a first intermediate body 40 is manufactured in which the dummy substrate 30 is bonded to the silicon substrate 3 provided with the release film 29 as shown in FIG. 7 in the dummy substrate bonding step. In the dummy substrate bonding step, for example, a dummy substrate 30 having a flat main surface and a slightly larger size than the silicon substrate 3 is used, which is made of a glass substrate or a silicon substrate having a relatively large mechanical rigidity. In the dummy substrate bonding step, a peeling film that can be peeled off from the silicon substrate 3 in a later step, for example, a heat peelable film that can be peeled off by heating to be peeled off or a predetermined solution is immersed in the dummy substrate bonding step. An appropriate release film 29 such as a release film that can be peeled off due to a decrease in adhesive strength is used.

  The first intermediate 40 is loaded into the component loading opening 8 by bonding the dummy substrate 30 to the first main surface 3A of the silicon substrate 3, specifically the conductive layer 16, via the release film 29. The reference surface of the mounted component 4 is configured. The first intermediate body 40 has an action of maintaining the overall mechanical rigidity by bonding the dummy substrate 30 to the thin silicon substrate 3, improving the handling property in the subsequent process and preventing deformation and the like. Play. In the first intermediate 40, the release film 29 joins the silicon substrate 3 and the dummy substrate 30, and closes the opening of the component loading opening 8 so that the mounted component 4 is loaded into each input / output unit. The effect | action which joins and temporarily holds the formation surface 10 is also show | played.

In the mounting component integration step, the mounting component 4 is loaded into the component loading opening 8 from the second main surface 3B side with the input / output portion forming surface 10 as a loading surface in the mounting component loading step. In the mounting component loading step, for example, the mounting component 4 is positioned with respect to the silicon substrate 3 by an appropriate component mounting apparatus and loaded into the component loading opening 8 . In the mounting component loading process, the mounted mounting component 4 is abutted against the main surface of the dummy substrate 30 (release film 29) with the input / output portion forming surface 10 as shown in FIG. 8, the second intermediate body 41 is manufactured so that the input / output portion forming surfaces 10 are aligned with each other.

  In the mounting component loading step, predetermined mounting components 4A, 4B, and 4D are loaded in a state where the individual heat radiation plate 14 is bonded in advance by the insulating adhesive materials 15A, 15B, and 15D as described above. The mounting components 4A, 4B, and 4D each have a height greater than the thickness of the silicon substrate 3, and the individual heat dissipation plate 14 protrudes from the second main surface 3B as shown in FIG. Is loaded. In the mounting component loading process, the mounting component 4 </ b> C that does not require heat dissipation is directly loaded into the component loading opening 8.

In the mounting component integration step, in the sealing resin layer forming step, the sealing resin layer 9 having a sufficient thickness in which the individual heat dissipation plate 14 protruding from the second main surface 3B of the silicon substrate 3 is embedded is formed. In the sealing resin layer forming process, an insulating sealing resin material such as a thermosetting liquid epoxy resin material or a liquid polyimide resin material, which is generally used in a semiconductor manufacturing process, is used. Layer 9 is formed. In the sealing resin layer forming step, the silicon substrate 3 is placed in a cavity such as a mold, and the insulating sealing resin material is filled in the cavity, so that the insulating sealing resin material becomes the component loading opening. It flows into the outer peripheral part of the mounting component 4 loaded in 8.

In the sealing resin layer forming step, for example, the insulating sealing resin material is cured by performing a curing process such as heating the mold, so that the silicon substrate 3 and the mounted component are formed on the dummy substrate 30 as shown in FIG. A third intermediate 42 in which 4 is embedded in the sealing resin layer 9 is manufactured. The third intermediate body 42 is made integral with the silicon substrate 3 by being formed of an insulating sealing resin material in which the sealing resin layer 9 is embedded and cured in the component loading opening 8. The third intermediate body 42 is configured between the main surface of the dummy substrate 30 and the input / output portion forming surface 10 because the mounting component 4 has the input / output pad 11 abutted against the dummy substrate 30 in detail. The insulating sealing resin material permeates into the gap to form the sealing resin layer 9, and the coating film on the input / output portion forming surface 10 is also configured. In the third intermediate 42, the input / output part forming surface 10 of the mounted component 4 is protected by this coating film.

  In the third intermediate 42, the sealing resin layer 9 having a sufficient thickness is formed, so that the mounting component 4 is damaged in the subsequent sealing resin layer polishing step or an excessive load is applied to the mounting component 4. Is prevented from directly moving and peeling off from the sealing resin layer 9 and moving. The sealing resin layer 9 may be formed at least to the extent that the mounting component 4 is embedded in the component loading opening 8. In the sealing resin layer forming step, for example, the sealing resin layer 9 may be formed by an appropriate resin package forming method employed in various chip manufacturing processes.

In the mounting component integration step, the sealing resin layer 9 is polished by the sealing resin layer polishing step until the second main surface 3B of the silicon substrate 3 is exposed to the third intermediate body 42 as shown in FIG. As shown in the drawing, a fourth intermediate body 43 that is thin as a whole is manufactured. In other words, in the sealing resin layer polishing step, the sealing resin layer 9 is polished from the main surface toward the silicon substrate 3 side with respect to the third intermediate 42 by, for example, a mechanical / chemical polishing method. In the sealing resin layer polishing step, as described above, the dummy substrate 30 is bonded and the polishing process is performed on the sealing resin layer 9 having a relatively large mechanical rigidity. Can be done.

  In the sealing resin layer polishing step, as described above, the individual heat dissipation plate 14 bonded to the bottom surface 12 of the mounting component 4 protrudes from the second main surface 3B of the silicon substrate 3, and these individual heat dissipation plates 14 are also shown in FIG. As shown in FIG. 4, the sealing resin layer 9 is polished and made thin until it forms the same surface as the second main surface 3B. In the sealing resin layer polishing step, the silicon etching film 32 left on the second main surface 3B of the silicon substrate 3 is simultaneously polished and removed. Since the sealing resin layer polishing step is performed to reduce the thickness of the hybrid module 1 and improve the heat dissipation characteristics, at least until the individual heat dissipation plate 14 bonded to the mounting component 4 is exposed. 9 may be a step of performing a polishing process.

In the mounting component integration process, the heat radiating plate 6 formed by a copper plate or the like on the second main surface 3B of the silicon substrate 3 with respect to the fourth intermediate body 43 through the adhesive layer 22 by the heat radiating plate joining step The fifth intermediate body 44 is manufactured as shown in FIG. The fifth intermediate body 44 covers the entire surface of the individual heat radiating plate 14 bonded to the mounting component 4 by bonding the heat radiating plate 6 onto the second main surface 3B flattened through the sealing resin layer polishing step. And good heat conduction.

The fifth intermediate body 44 is reinforced by the heat dissipation plate 6 to reduce the thickness of the fourth intermediate body 43 so that handling in the subsequent process is simplified. The fifth intermediate 44 is mounted by the sealing resin layer 9 in the component loading opening 8 of the silicon substrate 3 formed in a substantially trapezoidal cross section with the second main surface 3B side having a large diameter by the heat radiating plate 6. The part 4 is prevented from falling off or being displaced. In the fifth intermediate 44, the mounted component 4 and the sealing resin layer 9 are securely held in the component loading opening 8 by the heat radiating plate 6.

  In the mounting component integration process, the dummy substrate peeling process is used to bond the fourth intermediate body 43 to the thinned silicon substrate 3 as shown in FIG. The dummy substrate 30 that has been removed is peeled off. In the dummy substrate peeling step, for example, the dummy substrate 30 bonded to the silicon substrate 3 via the peeling film 29 on the first main surface 3A of the silicon substrate 3 as described above using a heat peeling film is used as the fourth intermediate. The intermediate body 31 shown in FIG. 13 is manufactured by being peeled off together with the release film 29 by performing heat treatment on 43.

The intermediate body 31 retains a large mechanical rigidity even after the dummy substrate 30 is peeled off by bonding the heat dissipation plate 6 to the second main surface 3B of the silicon substrate 3 in the heat dissipation plate bonding step of the previous process. As shown in FIG. 13, the intermediate body 31 includes a sealing resin in the component loading opening 8 in which the mounting component 4 constitutes substantially the same surface as each input / output portion forming surface 10 with respect to the first main surface 3 </ b> A. Embedded with the layer 9 and integrated with the silicon substrate 3. Intermediate 31 by the dummy substrate 30 is peeled off, along with the input and output pads 11 and the optical element 4 D of the optical signal input-output unit 13 is provided to the input-output portion forming surface 10 of the mounting part 4 is exposed parts A conductive layer 16 is formed on the first main surface 3A where the loading opening 8 is opened.

The intermediate body 31 is subjected to a wiring layer forming process by a general multilayer wiring technique on the first main surface 3A of the silicon substrate 3 to form the wiring layer 5 as shown in FIG. Specifically, the wiring layer forming step includes a first insulating resin layer forming step of forming the first insulating resin layer 17A on the first main surface 3A of the silicon substrate 3 , and a plurality of the first insulating resin layers 17A. A first via hole forming step for forming the first via hole 21A, a first wiring pattern forming step for forming the first wiring pattern 18A on the first insulating resin layer 17A, and conducting the conductive process to the first via hole 21A. A first via forming step for forming one via 19A.

The wiring layer forming step includes a second insulating resin layer forming step of covering the first insulating resin layer 17A with the first wiring pattern 18A to form the second insulating resin layer 17B, and the second insulating resin layer 17B. A second via hole forming step for forming a plurality of second via holes 21B therein, a second wiring pattern forming step for forming a second wiring pattern 18B on the second insulating resin layer 17B, and a conduction treatment to the second via hole 21B. The intermediate hybrid module 45 shown in FIG. 14 is manufactured with the second via forming step of forming the second via 19B. In the wiring layer formation step, the multilayer wiring layer 5 may be formed by repeating the above-described steps.

In the wiring layer forming step, the first insulating resin layer 17A and the second insulating resin layer 17B are formed of an insulating resin material having photosensitive light transmittance such as an epoxy resin. In the first insulating resin layer forming step, an insulating resin material is applied to the first main surface 3A of the silicon substrate 3 with a uniform thickness by a spin coating method, a dip method, or the like, and then subjected to a heat treatment to be cured. An insulating resin layer 17A is formed. In the first via hole forming process, predetermined masking is performed on the first insulating resin layer 17A to perform photosensitivity / development processing, and the insulating resin material layer is removed by etching processing. A first via hole 21A is formed to allow the output pad 11 to face outward. In the first via hole formation step, when the first insulating resin layer 17A is formed using a non-photosensitive insulating resin material , the first via hole 21A is formed by a dry etching method such as laser processing.

  In the wiring layer forming step, the first via hole 21A formed by the first via hole forming step is subjected to the first via forming step to form the first via 19A. In the first via formation step, the desmear process is performed in the first via hole 21A and, for example, an electroless copper plating process is performed to make the inner wall portion conductive. In the first via forming step, the first via 19A is formed by filling the first via hole 21A with a conductive paste and performing a lid forming process or the like.

  Although the details of the first wiring pattern forming step are omitted, for example, after patterning with a plating resist on the first insulating resin layer 17A, an electroless copper plating process or the like is performed to form a copper plating layer having a predetermined thickness. Then, by removing unnecessary plating resist, the first wiring pattern 18A made of a predetermined copper wiring pattern is formed. In the first wiring pattern forming step, as described above, the first wiring is formed on the first insulating resin layer 17A in the optical signal transmission path 5B through which the optical signal is transmitted facing the optical signal input / output unit 13 of the optical element 4D. Pattern design is appropriately performed so that the pattern 18A and the first via 19 are not formed.

The second insulating resin layer forming process is the same process as the first insulating resin layer forming process described above, and the first insulating resin layer 17A having the first wiring pattern 18A formed thereon has a uniform thickness over the entire surface. Two insulating resin layers 17B are formed. In the second insulating resin layer forming step, the same insulating resin material is used an insulating resin material for forming the first insulating resin layer 17A, the insulating resin material on the first insulating resin layer 17A by spin coating or the like After coating with a uniform thickness, the second insulating resin layer 17B is formed by performing a curing process such as heating.

  In the wiring layer forming step, the second via hole 21B is formed so that the land formed on the first wiring pattern 18A is exposed outward by the second via hole forming step similar to the first via hole forming step described above with respect to the second insulating resin layer 17B. Form. In the wiring layer forming step, the second wiring pattern 18B is formed on the second insulating resin layer 17B by the second wiring pattern forming step similar to the first wiring pattern forming step described above. The second wiring pattern 18B is interlayer-connected to the first wiring pattern 18A via the second via hole 21B, and a land for connection with the base substrate portion 7 is omitted.

  The wiring layer forming step is shown in FIG. 1 by forming a large number of bumps 20 on the surface 5A of the wiring layer 5 by performing a bump forming step of forming the bumps 20 on the lands of the second wiring pattern 18B. The completed hybrid module 1 is completed. In the bump formation step, bumps 20 having a predetermined height are formed on the lands by, for example, gold plating. As described above, the bump forming step may be a step of providing, for example, solder balls or metal balls on the lands by the mounting method for the base substrate portion 7 of the hybrid module 1.

The hybrid module manufacturing process includes a large number of mounting components 4 having different outer shapes as described above. However, since the mounting components 4 are mounted in a state of being embedded in the silicon substrate 3, the size and thickness can be reduced. Thus, the hybrid module 1 is manufactured in which the mounting component 4 and the wiring layer 5 are connected in the shortest time to reduce the parasitic capacitance and improve the characteristics. In the hybrid module manufacturing process, the wiring layer 5 is formed by a wafer process performed in a so-called semiconductor manufacturing process by forming the wiring layer 5 having a multilayer structure on the first main surface 3A of the planarized silicon substrate 3. Therefore, it is possible to form a fine and high-precision wiring pattern 18 on the insulating resin layer 17, and the hybrid module 1 is manufactured that is thinned and has high-density mounting and multi-functionality.

  The hybrid module manufacturing process manufactures the hybrid module 1 in which the mounting component 4 is embedded and fixed in the component loading opening 8 by using the silicon substrate 3 that hardly changes in shape and state due to heat as a base substrate. To do. In the hybrid module manufacturing process, deformation of the silicon substrate 3 due to the influence of heat in an etching process performed in the process or a reflow soldering process mounted on the base substrate 7 is suppressed, and the mounting component 4 is positioned and mounted with high accuracy. Thus, the hybrid module 1 is manufactured in which the connection state between the mounting component 4 and the wiring layer 5 is reliably maintained and the occurrence of disconnection or the like is suppressed to improve the reliability.

  In the hybrid module manufacturing process, since the silicon substrate 3 functions as a ground for the mounting component 4 and the wiring layer 5 and also exhibits a good heat dissipation action, the hybrid module 1 that exhibits stable functional operation is manufactured. The hybrid module manufacturing method manufactures the hybrid module 1 having excellent heat dissipation characteristics by providing the individual heat dissipating plate 14 on the necessary mounting component 4 and also providing the large heat dissipating plate 6.

  The hybrid module 1 manufactured through the above steps is mounted on the base substrate portion 7 together with other electronic components 24 and the like by a mounting method such as a flip chip mounting method via the bumps 20 in the hybrid module mounting step. 2 is completed. In the hybrid module mounting process, the hybrid circuit device 2 is completed by mounting the two hybrid modules 1A and 1B on the base substrate portion 7 as described above. Of course, the electronic component 24 may be mounted and configured.

  In the hybrid module mounting step, the hybrid module 1 is mounted on the base substrate portion 7 together with the electronic components 24 and the like with the surface 5A of the wiring layer 5 as a mounting surface. In the hybrid module mounting step, the hybrid module 1 is mounted by performing processing such as ultrasonic welding in a state where the bumps 20 are aligned with the opposing lands of the base substrate portion 7.

The base substrate unit 7 includes an optical waveguide member 26 mounted on a base wiring substrate 25 manufactured by a conventionally known multilayer wiring substrate technology, and electrically connects the hybrid module 1 and the electronic component 24 to the uppermost wiring pattern. Lands are formed for fixing. The base substrate 7, insulating protective layer 27 and the optical waveguide member 26 is provided, hybrid module 1 is mounted in alignment with the input and output end portions of the optical elements 4D and the optical waveguide member 2 6. In the hybrid circuit device 2, a heat spreader 23 is joined on the heat dissipation plate 6 of the hybrid module 1.

  The hybrid circuit device 2 in which the hybrid module 1 is mounted on the base substrate portion 7 through the above steps is mounted on a mother board or the like via electrode pads formed on the bottom surface side of the base wiring substrate 25. In the hybrid circuit device 2, the bump 20 is formed on the hybrid module 1 side, but the bump may be formed on the base substrate portion 7 side. The bump is formed by an appropriate method such as forming a copper bump by a copper plating method and performing nickel-gold plating or solder plating on the copper bump. For the base substrate portion 7, a so-called rigid-type multilayer wiring board is used, but a flexible wiring board using a polyimide film, for example, may be used.

  In the above-described embodiment, the optical element 4D is mounted as the mounting component 4 mounted on the silicon substrate 3, and the electrical signal processing function and the optical control signal for transmitting and receiving electrical control signals and data signals and supplying power are provided. Although the hybrid module 1 and the hybrid circuit device 2 having an optical signal processing function for transmitting and receiving data signals are shown, the present invention is not limited to such a configuration. Of course, the present invention may be, for example, a hybrid module and a hybrid circuit device having only an electric signal processing function. In the hybrid module and the hybrid circuit device, it is not particularly necessary to form the insulating layer with a light-transmitting insulating resin material.

  In the above-described embodiment, the hybrid module 1 in which the wiring layer 5 is formed on the first main surface 3A of the silicon substrate 3 in which the mounting component 4 is embedded is shown. However, the present invention is limited to such a configuration. For example, a second component mounting layer 51 having a second mounting component 52 such as a third LSI 52A and a fourth LSI 52B on the wiring layer 5 like the hybrid module 50 shown in FIG. 15 as the second embodiment. May be formed by laminating.

  The hybrid module 50 has the same configuration as the above-described hybrid module 1 except for the second component mounting layer 51. Therefore, the description thereof is omitted by attaching the same reference numerals to the corresponding portions. In the hybrid module 50, the third LSI 52A and the fourth LSI 52B are mounted on the wiring layer 5 as the second mounting component 52. However, not only the LSI but also a semiconductor element and other electronic components are mounted. Of course, may be implemented.

  In the hybrid module 50, as described above, a large number of connection pads 62 are formed on a part of the second wiring pattern 18B formed on the surface (uppermost layer) 5A of the wiring layer 5, and these connection pads are formed. A second mounting component 52 is mounted on 62 by, for example, a flip chip mounting method, and a large number of external connection columns 53 are formed. Further, in the hybrid module 50, the optical waveguide member 26 is mounted on the surface 5A of the wiring layer 5 with the end portion on which the mirror surface is formed facing the optical signal transmission path 5B.

In the hybrid module 50, the second sealing resin layer 54 is formed so as to cover the surface 5 </ b> A of the wiring layer 5. The second sealing resin layer 54 is also made of an insulating sealing resin material such as a thermosetting liquid epoxy resin material or a liquid polyimide resin material, similar to the sealing resin layer 9 described above. The second mounting component 52, the external connection column 53, or the optical waveguide member 26 described above is formed with a thickness sufficient to embed. The second sealing resin layer 54 fixes each mounting component described above on the wiring layer 5 by performing a curing process on the insulating sealing resin material.

In the hybrid module 50, the second sealing resin layer 54 is polished to a predetermined thickness by being subjected to a polishing process after being subjected to a curing process on the wiring layer 5. The hybrid module 50 can be thinned by polishing the so-called back surface within a range in which the third LSI 52A and the fourth LSI 52B do not impair the functions of the second sealing resin layer 54 during the polishing process. In the hybrid module 50, by polishing the second sealing resin layer 54 , each external connection column 53 has its upper end surface substantially flush with the surface of the second sealing resin layer 54 and the polishing surface of the second mounting component 52. And is exposed to the outside. In each external connection column 53, bumps 55 are formed on the exposed upper end surface by gold plating, tin plating, solder plating, or the like.

  In the hybrid module 50, as described above, a plurality of mounting components 4 having different characteristics are embedded in the silicon substrate 3, and the wiring formed on the first main surface 3A of the silicon substrate 3 is mounted. The second mounting component 52 is also mounted on the surface 5A of the layer 5. The hybrid module 50 is slightly thicker than the above-described hybrid module 1 by the amount of mounting of the second mounting component 52, but can be more multifunctional and highly functional. Even in the hybrid module 50, the overall reduction in size and thickness is maintained by skillful high-density mounting.

  In the hybrid module 50, the mounting component 4 is integrated with the silicon substrate 3 that hardly changes in size and shape due to the influence of heat or the like as a base substrate, and a highly accurate wiring layer 5 is formed. 2 The mounting component 52 is mounted. In the hybrid module 50, the silicon substrate 3 functions as the ground of the mounting component 4, the wiring layer 5, or the second mounting component 52 and also exhibits a good heat dissipation function, thereby achieving stable functional operation and reliability. Improvement comes to be achieved. Also in the hybrid module 50, the mounting component 4 and the second mounting component 52 are directly connected to the wiring layer 5 by the via 19 to shorten the wiring and reduce the regulation capacity in the connection portion, and the CR time constant. The characteristics can be improved by reducing signal transmission delay, EMI noise or EMC.

The hybrid module 50 configured as described above is mounted on a wiring board 56 such as a mother board or an interposer whose details are omitted as shown in FIG. Configure. The hybrid module 50 is shown with only the third LSI 52A mounted for convenience of explanation. The hybrid circuit device 58 is equipped with the hybrid module 50 and, like the hybrid circuit device 2 described above, transmits and receives electrical control signals and data signals or supplies power, and optical control signals and data signals. And an optical wiring structure for transmitting and receiving control signals, data signals, and the like for high speed and high capacity transmission .

  The hybrid circuit device 56 is, for example, configured as a high-frequency optical front-end module by being flip-chip mounted on a control board or the like on the device side (not shown) via connection bumps 59 provided on the bottom surface of the wiring board 56. In the hybrid circuit device 56, the optical connector member 60 is connected to the other end portion guided to the side of the optical waveguide member 26 mounted on the second component mounting layer 51 of the hybrid module 50 as described above.

In hybrid circuit device 5-8, an optical signal transmitted through the optical signal transmission path 5B of emitted wiring layer 5 from the optical element 4D hybrid module 50, it is incident from one end of the optical waveguide member 26. In hybrid circuit device 5 8, the optical waveguide member 26 is an optical signal transmitted to the optical connector member 60 by the mirror surface, the output to the control unit or the like (not shown) via an optical fiber 61 connected to the optical connector member 60 To do. Hybrid circuit device 5 8, when the optical element 4D hybrid module 50 is a light receiving element, an optical signal transmitted to the optical connector member 60 via the optical fiber 61 is emitted from the control unit or the like, the optical waveguide member 26 The mirror surface is made incident on the optical signal transmission path 5B of the wiring layer 5. In hybrid circuit device 5-8, so that the optical signal is received by the optical element 4D passes through the optical signal transmission path 5B.

Hereinafter, although the manufacturing process of the hybrid module 50 is demonstrated, since the process to a wiring layer formation process is made equivalent to the manufacturing process of the hybrid module 1 mentioned above, the description is abbreviate | omitted. The manufacturing process of the hybrid module 50 includes a connection pad forming process in which a large number of connection pads 62 are formed on the surface 5A of the wiring layer 5, and a large number of external connection columns are provided via the connection pads 62. An external connection column forming step for forming 53 and a second component mounting step for forming a second component mounting layer 51 on which a plurality of second mounting components 52 are mounted are performed. The manufacturing process of the hybrid module 50 includes an optical waveguide member mounting process for mounting the optical waveguide member 26. The manufacturing process of the hybrid module 50 includes a second sealing resin layer forming process for forming the second sealing resin layer 54 on the surface 5A of the wiring layer 5, and polishing the second sealing resin layer 54 to a predetermined thickness. A second sealing resin layer polishing step and a connection bump forming step for forming a large number of connection bumps 59 are performed.

  As described in the above-described manufacturing process of the hybrid module 1, the manufacturing process of the hybrid module 50 includes forming the second wiring pattern 18B by the wiring layer forming process, and a plurality of the wiring modules 50 at appropriate positions of the second wiring pattern 18B. The connection pads 62 are integrally formed. In the connection pad forming step, the connection pad 62 is formed simultaneously when the copper plating layer formed on the second insulating resin layer 17B is subjected to patterning to form the second wiring pattern 18B.

  The external connection column forming step is a step of forming the external connection column 53 on each predetermined connection pad 62A formed on the surface 5A of the wiring layer 5, and is, for example, plating employed in the multilayer wiring board technology. A well-known Pactel method, a Plated Riser method, or the like for forming via pillars is formed. In the external connection column forming step, a predetermined connection pad 62 is opened to form a plating resist pattern using a dry film, and a columnar external connection column 53 having a predetermined height is formed into electrolytic copper as shown in FIG. It is formed by plating. In the external connection column forming step, the external connection column 53 may be constituted by, for example, solder balls.

  In the second component mounting step, the third LSI 52A and the fourth LSI 52B are mounted as the second mounting component 52 on the predetermined connection pad 62B formed on the surface 5A of the wiring layer 5 by, for example, a flip chip method. In the second component mounting step, the second mounting component 52 is positioned and assembled on the surface 5A of the wiring layer 5 with the input / output portion forming surface on which the input / output pads 63 for inputting / outputting electrical signals are formed as the mounting surface. In the second component mounting step, as shown in FIG. 18, the second mounting component 52 is mounted by bonding each input / output pad 63 to the opposing connection pad 62B. The second mounting component 52 has a thickness smaller than the height of the external connection column 53 as shown in FIG.

In the optical waveguide member mounting step, the optical waveguide member 26 is mounted on the surface 5A of the wiring layer 5 as shown in FIG. In the optical waveguide member mounting process, although not described in detail, the optical waveguide member 26 with an appropriate adhesive applied to the outer peripheral portion has one end portion constituting the mirror surface as one end portion on the optical signal transmission path 5B of the wiring layer 5. to face it is bonded onto the front surface 5A. The other end of the optical waveguide member 26 is pulled out sideways as shown in FIG. In the manufacturing process of the hybrid module 50, the sixth intermediate body 64 in which the second mounting component 52, the external connection column 53, and the optical waveguide member 26 are mounted on the surface 5A of the wiring layer 5 is formed through the above-described steps. .

In the second sealing resin layer forming step, the second sealing resin layer 54 having a thickness sufficient to embed these mounting components on the surface thereof is formed on the surface of the sixth intermediate body 64. In the second sealing resin layer forming step, the intermediate 64 is placed in a cavity such as a mold, and an insulating sealing resin material equivalent to the insulating sealing resin material for forming the sealing resin layer 9 described above, for example, A thermosetting liquid epoxy resin material or polyimide resin material is filled in the cavity. In the second sealing resin layer forming step, for example, by performing a curing process such as heating the mold to cure the insulating sealing resin material, as shown in FIG. A seventh intermediate 65 is formed by burying 53 and the optical waveguide member 26 with the second sealing layer 54. In the seventh intermediate 65, the second mounting component 52, the external connection column 53, and the optical waveguide member 26 are firmly fixed by the second sealing resin layer 54 on the surface 5 </ b> A of the wiring layer 5. In the second sealing resin layer forming step, the second sealing resin layer 54 may be formed by an appropriate resin packaging method employed in various chip manufacturing steps.

In the second sealing resin layer polishing step, the second sealing resin layer 54 is polished from the surface side to a predetermined thickness with respect to the seventh intermediate 65 to reduce the thickness, and the upper end portion of the external connection column 53 is The eighth intermediate body 66 shown in FIG. 20 is formed by exposing to the outside. In the second sealing resin layer polishing step, for example, the second sealing resin layer 54 is polished from the surface side toward the wiring layer 5 side by a mechanical / chemical polishing method. Since the plates 6 are laminated and have a relatively large mechanical rigidity as a whole, high-precision and efficient polishing is performed.

In the second sealing resin layer polishing step, even after the upper portion of the external connection column 53 is exposed polishing of the second sealing resin layer 54 is continuously performed. In the second sealing resin layer polishing step, the functions of the third LSI 52A and the fourth LSI 52B mounted with the bottom surface facing the surface side of the second sealing resin layer 54 are indicated by chain lines in FIG. By performing the back surface polishing within the thickness range, the entire thickness can be reduced. In the second sealing resin layer polishing step, as shown in FIG. 20, the upper surface of each external connection column 53 and the bottom surfaces of the third LSI 52A and the fourth LSI 52B are flush with the polishing surface of the second sealing resin layer 54. A configured eighth intermediate 66 is formed.

In the connection bump forming step, connection bumps 59 are formed on the upper end surfaces of the respective external connection columns 53 exposed on the polished surface of the second sealing resin layer 54 as shown in FIG. In the connecting bump forming step, the connecting bump 59 having a predetermined height is formed on the connecting bump 59 by, for example, a gold pattern plating process. Note that the connecting bump forming step may be a step of providing, for example, a solder ball or a metal ball on the connecting bump 59 according to the mounting method on the wiring board 56.

In the hybrid module manufacturing process, the hybrid module 50 formed through the above-described processes is mounted on the wiring board 56 to manufacture the hybrid circuit device 58 shown in FIG. In the hybrid module manufacturing process, the hybrid module 50 performs, for example, an ultrasonic deposition process on the connection bumps 59 in a state where the external connection columns 53 are aligned on the opposing lands with respect to the wiring board 56. In this way, the hybrid circuit device 58 is manufactured. In the hybrid circuit device 58, the heat spreader 23 is joined to the heat radiation plate 6 of the hybrid module 50, and the optical connector 60 is coupled to the end of the optical waveguide member 26.

  In the hybrid module manufacturing process, a hybrid module 50 is manufactured in which a large number of mounting components 4 are mounted on one side with the wiring layer 5 interposed therebetween and a large number of second mounting components 52 are mounted on the other side. Also in the hybrid module manufacturing process, by connecting each mounting component 4 on one side and the second mounting component 52 on the other side through the wiring layer 5 in the shortest time, the parasitic capacitance due to the wiring pattern is reduced and the characteristics are improved. The hybrid module 50 is manufactured.

In the hybrid module manufacturing process, each mounting component 4 on one side is mounted with being embedded in the silicon substrate 3, and the second mounting component 52 on the other side is back-polished in the second sealing resin layer 54. As a result, the hybrid module 50 mounted with a minimum thickness is manufactured. Also in the hybrid module manufacturing process, by providing a large number of mounting parts 4 and 52, the multi-function and high performance can be further achieved, and the hybrid module 50 designed to cope with thinning and high-density mounting is manufactured.

In the hybrid module manufacturing process, each mounting component 4 is mounted in a state where it is embedded in the silicon substrate 3 in which the shape and state hardly change due to heat, and is mounted on the first main surface 3A of the silicon substrate 3. The wiring layer 5 is formed, and the hybrid module 50 in which the second component mounting layer 51 in which the second mounting component 52 is sealed with the second sealing resin layer 54 is formed on the wiring layer 5 is manufactured. Also in the hybrid module manufacturing process, although it is affected by heat in an etching process performed in the process or a reflow soldering process for mounting on the wiring substrate 56, the deformation of the silicon substrate 3 is suppressed and the mounting component 4 or the second mounting component 52 is suppressed. The hybrid module 50 is manufactured by positioning and mounting with high accuracy, reliably maintaining the connection state with the wiring layer 5 and suppressing occurrence of disconnection or the like to improve reliability.

  In the hybrid module manufacturing process, the silicon substrate 3 functions as the ground of the mounting component 4, the second mounting component 52, or the wiring layer 5, and also has a good heat dissipation action, and manufactures the hybrid module 50 that exhibits stable functional operation. In the hybrid module manufacturing method, the individual heat dissipating plate 14 and the large heat dissipating plate 6 are provided on the mounting component 4 that needs to dissipate heat on one side, and the heat generated from the second mounting component 52 on the other side is also applied to the wiring layer 5. The hybrid module 50 having excellent heat dissipation characteristics in which heat is dissipated in the shortest way is manufactured.

  The hybrid module 50 also has an electrical signal processing function for mounting an optical element 4D as a mounting component 4 to be mounted on the silicon substrate 3 to exchange electrical control signals and data signals and supply power, and optical control signals and data signals. However, the present invention is not limited to such a configuration. In the hybrid module 50, for example, only the electric signal processing function may be provided. In this case, it is not necessary to form the insulating layer with a light-transmitting insulating resin material.

It is sectional drawing of the hybrid module shown as embodiment. It is sectional drawing of the hybrid circuit apparatus carrying a hybrid module. It is a manufacturing process figure of a hybrid module, and is sectional drawing of the silicon substrate which performed the grinding process to the silicon base material. It is sectional drawing of the silicon substrate in which the silicon etching film was formed. It is sectional drawing of the silicon substrate in which the component loading opening part and the conductive layer were formed. It is sectional drawing of the silicon substrate which formed the opening part in the conductive layer. It is sectional drawing of the 1st intermediate body which joined the dummy substrate. It is sectional drawing of the 2nd intermediate body which loaded mounting components in the component loading opening part. It is sectional drawing of the 3rd intermediate body in which the sealing resin layer was formed. It is sectional drawing of the 4th intermediate body which thinned by giving the sealing process to the sealing resin layer. It is sectional drawing of the 5th intermediate body which joined the heat sink. It is explanatory drawing of the process of peeling a dummy substrate from a silicon substrate. It is sectional drawing of the intermediate body which peeled the dummy substrate. It is sectional drawing of the intermediate module which formed the wiring layer in the intermediate body. It is sectional drawing of the hybrid module shown as 2nd Embodiment. It is sectional drawing of the hybrid circuit apparatus carrying a hybrid module. It is sectional drawing of the intermediate body which formed the column for external connection on the wiring layer. It is sectional drawing of the 6th intermediate body which mounted the 2nd mounting component on the wiring layer. It is sectional drawing of the 7th intermediate body in which the 2nd sealing resin layer was formed. It is sectional drawing of the 8th intermediate body which grind | polished the 2nd sealing resin layer.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Hybrid module, 2 Hybrid circuit apparatus, 3 Silicon substrate, 4 Mounting components, 4D optical element, 5 Wiring layer, 6 Radiation plate, 7 Base board part, 8 Component loading opening part, 9 Sealing resin layer, 10 Input / output part Forming surface, 11 Input / output pad, 13 Optical signal input / output section, 14 Individual heat dissipation plate, 16 Conductive layer, 17 Insulating resin layer, 18 Wiring pattern, 19 Via, 20 Bump, 23 Heat spreader, 24 Electronic component, 25 Base wiring Substrate, 26 Optical waveguide member, 29 Release film, 30 Dummy substrate, 31 Intermediate, 32 Silicon etching film, 33 Opening, 50 Hybrid module, 51 Second component mounting layer, 52 Second mounting component, 53 External connection column 54 Second sealing resin layer, 55 bump, 56 wiring board, 58 hybrid circuit device, 60 light Connector, 61 Optical fiber, 62 Connection pad

Claims (20)

A silicon substrate having a plurality of component loading openings formed of through openings;
A plurality of mounting components loaded in the respective component loading openings, each input / output portion forming surface constituting substantially the same surface as the first main surface of the silicon substrate;
Each component loading opening is formed by a sealing material filled in each component loading portion, and each mounting component is loaded with each component in a state where the input / output portion forming surface is exposed to the first main surface of the silicon substrate. A sealing resin layer embedded and fixed in the opening,
A wiring pattern formed on the first main surface of the silicon substrate and connected to an input / output unit provided on the input / output unit forming surface of each mounting component exposed from the first main surface; A hybrid module comprising a wiring layer.   2. The hybrid module according to claim 1, wherein a reinforcing plate member is bonded to the second main surface of the silicon substrate by closing the opening of each of the component loading openings. 4. The hybrid module according to claim 3 , wherein a metal plate having a high thermal conductivity characteristic is used as the reinforcing plate member, and also serves as a heat radiating member that radiates heat generated from each mounting component.   An individual heat dissipating member is joined to the mounting part having heat generation characteristics on the bottom side facing the input / output portion forming surface, and heat is transferred from the individual heat dissipating member to the reinforcing plate member. The hybrid module according to claim 3, wherein heat generated in the component is radiated.   2. The hybrid module according to claim 1, wherein each of the mounted components is a component having different characteristics. A conductive layer formed on the first main surface of the silicon substrate to electrically connect the silicon substrate and the wiring pattern of the wiring layer;
The hybrid module according to claim 1, wherein the silicon substrate is caused to act as a power supply unit or a ground unit through the conductive layer.   The wiring layer includes at least one insulating layer formed on the first main surface of the silicon substrate, and a copper wiring pattern formed by patterning a copper plating layer formed on each insulating layer. 2. The hybrid module according to claim 1, wherein a via and a plurality of external connection pads for connecting the wiring pattern and the input / output portion of each mounted component are formed on the uppermost layer.   The wiring layer includes at least one insulating layer formed on the first main surface of the silicon substrate, and a copper wiring pattern formed by patterning a copper plating layer formed on each insulating layer. In the uppermost layer, a large number of connection pads connected to the input / output portions of the respective mounting components via vias are formed, and a plurality of second mounting components are mounted via these connection pads. The hybrid module according to claim 1, wherein a plurality of external connection columns are formed. Polishing for exposing at least the upper end surface of the external connection column to the second sealing material layer formed by embedding the second mounting component and the external connection column provided on the wiring layer. The hybrid module according to claim 8, wherein the second sealing resin layer is formed by processing. A silicon substrate processing step having a component loading opening forming step of forming a plurality of component loading openings formed of through openings penetrating the first principal surface and the second principal surface in the silicon substrate, and each of the component loading openings. A mounting component integration step in which each of the input / output portion forming surfaces forms substantially the same surface as the first main surface of the silicon substrate to integrate the mounting components, and on the first main surface of the silicon substrate . A wiring layer forming step of covering each mounting component and forming a wiring layer;
The mounting component integration process
A dummy substrate bonding step for bonding the dummy substrate on the first main surface to the silicon substrate so that the opening on the first main surface side of each component loading opening is closed;
By loading each mounting component on the silicon substrate into the component loading opening from the opening on the second main surface side with the input / output portion forming surface as the loading side, on the dummy substrate A mounting component loading step for configuring each of the input / output unit forming surfaces to hold substantially the same surface, and
Each component loaded by a sealing material filled in the opening and solidified to form each encapsulating resin layer, sealing resin for fixing by embedding each mounted component on each component loading opening by the sealed resin layer A layer forming step;
A peeling step of peeling the silicon substrate from the dummy substrate,
A hybrid module is manufactured in which each of the mounted components is exposed in a state in which each of the input / output unit forming surfaces is substantially the same as the first main surface of the silicon substrate and is embedded in each of the component loading openings. A method for manufacturing a hybrid module, comprising: The component loading opening forming step is a step of forming the component loading opening by subjecting a silicon substrate having a surface orientation of 100 to anisotropic wet etching from the second main surface side,
11. The method of manufacturing a hybrid module according to claim 10, wherein the component loading opening having a trapezoidal cross section having a large diameter on the second main surface side and gradually becoming a small diameter toward the first main surface side. .   11. The silicon substrate polishing step of performing a polishing process in which the silicon substrate has a thickness substantially equal to or greater than the maximum thickness of the mounted component in a step before the component loading opening forming step. A method for manufacturing a hybrid module. In step after the sealing resin layer forming step, it has a second major surface or the sealing resin layer polishing step of performing polishing to expose the bottom surface of the mounting component of the silicon substrate with respect to the sealing resin layer The method for producing a hybrid module according to claim 10. 14. The method for manufacturing a hybrid module according to claim 13, further comprising a reinforcing plate member joining step for joining a reinforcing plate member covering the entire polishing surface in a subsequent step of the sealing resin layer polishing step. .   15. The reinforcing plate member joining step is made of a metal plate having high thermal conductivity characteristics, and the reinforcing plate member that also serves as a heat radiating member that radiates heat generated from each mounted component is joined. The manufacturing method of the hybrid module as described in any one of.   11. The method for manufacturing a hybrid module according to claim 10, wherein the mounting component loading step loads the mounting components having different characteristics into the component loading opening. As a pre-process of the component loading opening forming step, a conductive layer forming step of forming a conductive layer over the entire surface of the first main surface of the silicon substrate,
The conductive layer left on the first main surface of the silicon substrate through the component loading opening forming step electrically connects the silicon substrate and a predetermined wiring pattern of the wiring layer to form the silicon The method of manufacturing a hybrid module according to claim 10, wherein a conductive pattern layer is provided that causes the substrate to act as a power supply unit or a ground unit. The wiring layer forming step includes an insulating layer forming step of forming an insulating layer on the first main surface of the silicon substrate, and a copper plating layer forming in which a copper plating process is performed on the insulating layer to form a copper plating layer Forming a copper wiring pattern by performing a patterning process on the copper plating layer, and vias connecting the copper wiring pattern and the electrode pads provided on the input / output portion forming surface of each mounted component A step of forming at least one wiring layer through a via forming step to be formed,
11. The method of manufacturing a hybrid module according to claim 10, wherein the wiring layer having an external connection pad forming step of forming an external connection pad on the uppermost wiring layer is formed. The wiring layer forming step includes an insulating layer forming step of forming an insulating layer on the first main surface of the silicon substrate, and a copper plating layer forming in which a copper plating process is performed on the insulating layer to form a copper plating layer Forming a copper wiring pattern by performing a patterning process on the copper plating layer, and vias connecting the copper wiring pattern and the electrode pads provided on the input / output portion forming surface of each mounted component A connection layer is formed by forming at least one wiring layer through the via forming step and forming a large number of connection pads connected to the input / output portions of the respective mounted components via vias on the uppermost layer. A pad forming step,
As a subsequent step of the wiring layer forming step, a second mounting component mounting step of mounting a plurality of second mounting components on the uppermost layer of the wiring layer via the connection pads, and a plurality of external connections The method for manufacturing a hybrid module according to claim 10, wherein an external connection column forming step of forming a column for use is performed. As a subsequent step of the second mounting component mounting step and the external connection column forming step, a second seal for embedding the second mounting component and the external connection column on the uppermost layer of the wiring layer with a sealing material. a second sealing material layer forming step of forming a sealing material layer, the second sealing resin layer Strain facilities polishing treatment to expose the upper surface of the external connection column relative to the second sealing material layer The method for producing a hybrid module according to claim 19, further comprising a second sealing resin layer forming step to be formed.