JP2006253659A5 - - Google Patents
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- Publication number
- JP2006253659A5 JP2006253659A5 JP2006027923A JP2006027923A JP2006253659A5 JP 2006253659 A5 JP2006253659 A5 JP 2006253659A5 JP 2006027923 A JP2006027923 A JP 2006027923A JP 2006027923 A JP2006027923 A JP 2006027923A JP 2006253659 A5 JP2006253659 A5 JP 2006253659A5
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- JP
- Japan
- Prior art keywords
- impurity
- ion
- concentration
- compound
- acceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000012535 impurity Substances 0.000 claims 20
- 150000002500 ions Chemical class 0.000 claims 20
- 239000007789 gas Substances 0.000 claims 12
- 150000001875 compounds Chemical class 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 238000010790 dilution Methods 0.000 claims 4
- 239000012895 dilution Substances 0.000 claims 4
- 238000001819 mass spectrum Methods 0.000 claims 4
- 230000001133 acceleration Effects 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- -1 compound ion Chemical class 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 150000008040 ionic compounds Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006027923A JP4860287B2 (ja) | 2005-02-10 | 2006-02-06 | ドーピング方法及び電界効果型トランジスタの作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005034719 | 2005-02-10 | ||
| JP2005034719 | 2005-02-10 | ||
| JP2006027923A JP4860287B2 (ja) | 2005-02-10 | 2006-02-06 | ドーピング方法及び電界効果型トランジスタの作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006253659A JP2006253659A (ja) | 2006-09-21 |
| JP2006253659A5 true JP2006253659A5 (https=) | 2009-03-26 |
| JP4860287B2 JP4860287B2 (ja) | 2012-01-25 |
Family
ID=37093747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006027923A Expired - Fee Related JP4860287B2 (ja) | 2005-02-10 | 2006-02-06 | ドーピング方法及び電界効果型トランジスタの作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4860287B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2066138B1 (en) | 2006-09-20 | 2020-11-11 | NEC Corporation | Mobile communication system, user equipment, and method for reducing communication processing completion time used for them |
| CN101281912B (zh) | 2007-04-03 | 2013-01-23 | 株式会社半导体能源研究所 | Soi衬底及其制造方法以及半导体装置 |
| EP1993127B1 (en) * | 2007-05-18 | 2013-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08225938A (ja) * | 1995-02-22 | 1996-09-03 | Ishikawajima Harima Heavy Ind Co Ltd | イオンシャワードーピング装置 |
| US6101971A (en) * | 1998-05-13 | 2000-08-15 | Axcelis Technologies, Inc. | Ion implantation control using charge collection, optical emission spectroscopy and mass analysis |
| EP0964074A3 (en) * | 1998-05-13 | 2001-02-07 | Axcelis Technologies, Inc. | Ion implantation control using optical emission spectroscopy |
| JP2000114198A (ja) * | 1998-10-05 | 2000-04-21 | Matsushita Electric Ind Co Ltd | 表面処理方法および装置 |
| JP4326756B2 (ja) * | 2002-07-04 | 2009-09-09 | 株式会社半導体エネルギー研究所 | ドーピング方法、ドーピング装置の制御システム、およびドーピング装置 |
-
2006
- 2006-02-06 JP JP2006027923A patent/JP4860287B2/ja not_active Expired - Fee Related
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