JP4860287B2 - ドーピング方法及び電界効果型トランジスタの作製方法 - Google Patents
ドーピング方法及び電界効果型トランジスタの作製方法 Download PDFInfo
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- JP4860287B2 JP4860287B2 JP2006027923A JP2006027923A JP4860287B2 JP 4860287 B2 JP4860287 B2 JP 4860287B2 JP 2006027923 A JP2006027923 A JP 2006027923A JP 2006027923 A JP2006027923 A JP 2006027923A JP 4860287 B2 JP4860287 B2 JP 4860287B2
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- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 230000005669 field effect Effects 0.000 title description 11
- 150000002500 ions Chemical class 0.000 claims description 191
- 239000012535 impurity Substances 0.000 claims description 88
- 239000007789 gas Substances 0.000 claims description 75
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 33
- 239000001257 hydrogen Substances 0.000 claims description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 29
- 230000014509 gene expression Effects 0.000 claims description 29
- 238000001819 mass spectrum Methods 0.000 claims description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 23
- 230000001133 acceleration Effects 0.000 claims description 20
- 238000010790 dilution Methods 0.000 claims description 8
- 239000012895 dilution Substances 0.000 claims description 8
- -1 compound ion Chemical class 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 150000008040 ionic compounds Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 58
- 229910052796 boron Inorganic materials 0.000 description 36
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 35
- 239000010410 layer Substances 0.000 description 23
- 239000010409 thin film Substances 0.000 description 15
- 238000005259 measurement Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000009832 plasma treatment Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000010884 ion-beam technique Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000007865 diluting Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical class [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006027923A JP4860287B2 (ja) | 2005-02-10 | 2006-02-06 | ドーピング方法及び電界効果型トランジスタの作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005034719 | 2005-02-10 | ||
| JP2005034719 | 2005-02-10 | ||
| JP2006027923A JP4860287B2 (ja) | 2005-02-10 | 2006-02-06 | ドーピング方法及び電界効果型トランジスタの作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006253659A JP2006253659A (ja) | 2006-09-21 |
| JP2006253659A5 JP2006253659A5 (https=) | 2009-03-26 |
| JP4860287B2 true JP4860287B2 (ja) | 2012-01-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006027923A Expired - Fee Related JP4860287B2 (ja) | 2005-02-10 | 2006-02-06 | ドーピング方法及び電界効果型トランジスタの作製方法 |
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| Country | Link |
|---|---|
| JP (1) | JP4860287B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2066138B1 (en) | 2006-09-20 | 2020-11-11 | NEC Corporation | Mobile communication system, user equipment, and method for reducing communication processing completion time used for them |
| CN101281912B (zh) | 2007-04-03 | 2013-01-23 | 株式会社半导体能源研究所 | Soi衬底及其制造方法以及半导体装置 |
| EP1993127B1 (en) * | 2007-05-18 | 2013-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08225938A (ja) * | 1995-02-22 | 1996-09-03 | Ishikawajima Harima Heavy Ind Co Ltd | イオンシャワードーピング装置 |
| US6101971A (en) * | 1998-05-13 | 2000-08-15 | Axcelis Technologies, Inc. | Ion implantation control using charge collection, optical emission spectroscopy and mass analysis |
| EP0964074A3 (en) * | 1998-05-13 | 2001-02-07 | Axcelis Technologies, Inc. | Ion implantation control using optical emission spectroscopy |
| JP2000114198A (ja) * | 1998-10-05 | 2000-04-21 | Matsushita Electric Ind Co Ltd | 表面処理方法および装置 |
| JP4326756B2 (ja) * | 2002-07-04 | 2009-09-09 | 株式会社半導体エネルギー研究所 | ドーピング方法、ドーピング装置の制御システム、およびドーピング装置 |
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- 2006-02-06 JP JP2006027923A patent/JP4860287B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
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| JP2006253659A (ja) | 2006-09-21 |
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