JP2006185950A - 圧電/電歪体、圧電/電歪積層体、及び圧電/電歪膜型アクチュエータ - Google Patents
圧電/電歪体、圧電/電歪積層体、及び圧電/電歪膜型アクチュエータ Download PDFInfo
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- JP2006185950A JP2006185950A JP2004374756A JP2004374756A JP2006185950A JP 2006185950 A JP2006185950 A JP 2006185950A JP 2004374756 A JP2004374756 A JP 2004374756A JP 2004374756 A JP2004374756 A JP 2004374756A JP 2006185950 A JP2006185950 A JP 2006185950A
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- 239000013078 crystal Substances 0.000 claims abstract description 73
- 239000002245 particle Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 39
- 238000006073 displacement reaction Methods 0.000 abstract description 38
- 238000005452 bending Methods 0.000 abstract description 32
- 239000000203 mixture Substances 0.000 description 48
- 229910052573 porcelain Inorganic materials 0.000 description 26
- 239000010410 layer Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 23
- 239000000919 ceramic Substances 0.000 description 13
- 238000010304 firing Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 238000007650 screen-printing Methods 0.000 description 11
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 9
- 229910001928 zirconium oxide Inorganic materials 0.000 description 9
- 239000006104 solid solution Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 229910002659 PbMg1/3Nb2/3O3 Inorganic materials 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- 239000000443 aerosol Substances 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011268 mixed slurry Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910020215 Pb(Mg1/3Nb2/3)O3PbTiO3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
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Abstract
【解決手段】圧電/電歪性を有する多数の結晶粒子31からなる膜状又は1以上の層を持つ層状の圧電/電歪体30である。任意の厚み方向の断面において観察される多数の結晶粒子31に占める、厚み方向の少なくともいずれかの外部との界面35a,35bにその一部が露出している結晶粒子32の個数割合が、80%以上である。
【選択図】図1
Description
Pbx(Mgy/3Nb2/3)aTibZrcO3 …(1)
(前記組成式(1)中、0.95≦x≦1.05、0.8≦y≦1.0であり、かつa,b,cが、前記a,b,cの3つを座標軸とする座標中、(a,b,c)=(0.550,0.425,0.025)、(0.550,0.325,0.125)、(0.375,0.325,0.300)、(0.050,0.425,0.525)、(0.050,0.525,0.425)、(0.375,0.425,0.200)で囲まれる範囲の小数(但し、a+b+c=1.00)である)
Pbx{(Mg1-yNiy)(1/3)×aNb2/3}bTicZrdO3 …(2)
(前記組成式(2)中、0.95≦x≦1.05、0.05≦y≦0.20、0.90≦a≦1.10であり、かつb,c,dが、前記b,c,dを座標軸とする座標中、(b,c,d)=(0.550,0.425,0.025),(0.550,0.325,0.125),(0.375,0.325,0.300),(0.050,0.425,0.525),(0.050,0.525,0.425),(0.375,0.425,0.200)で囲まれる範囲の小数(但し、(b+c+d)=1.000)である)
Y2O3で安定化された、薄肉部が平坦なZrO2基体(薄肉部の寸法:1.6×1.1mm、厚さ:7μm)上に、Ptからなる下部電極(寸法:1.2×0.8mm、厚さ:3μm)をスクリーン印刷法により形成し、1300℃、2時間の熱処理により基体と一体化させた。次いで、その上に、Pb1.00(Mg1/3Nb2/3)0.20Ti0.43Zr0.37O398.5質量%と、NiO1.5質量%とを含有する、その平均粒子径が表1に示す値である圧電磁器組成物からなる圧電材料をスクリーン印刷法により、寸法1.3×0.9mm、厚み8μmで積層した積層体を得た。得られた積層体を、容器内空間単位体積当たりに含まれる雰囲気調整材料の量が9mg/cm3となるように、圧電磁器組成物と同一組成の雰囲気調整材料を共存させて雰囲気を調整した容器に入れ、1275℃、2時間熱処理(焼成)した。熱処理後の圧電部の厚みは、いずれも5μmであった。次に、圧電部の上に、Auからなる上部電極(寸法:1.2×0.8mm、厚さ:0.5μm)をスクリーン印刷法により形成した後、熱処理して、膜状の圧電駆動部を有する圧電膜型アクチュエータ(実施例1,2、比較例1)を製造した。製造した圧電膜型アクチュエータの物性値、及び屈曲変位の測定結果を表1に示す。
スクリーン印刷法を繰り返すことにより、その厚みが35μmとなるまで圧電材料を積層したこと以外は、前述の実施例1の場合と同様にして、圧電膜型アクチュエータ(実施例3)を製造した。製造した圧電膜型アクチュエータの物性値、及び屈曲変位の測定結果を表2に示す。
スクリーン印刷法により圧電材料を8μmの厚みで積層した後、熱処理する前に、Ptからなる上部電極、及び8μm厚みの圧電材料をスクリーン印刷法により形成し、次いで熱処理すること以外は、前述の実施例1の場合と同様にして、圧電膜型アクチュエータ(実施例4)を製造した。製造した圧電膜型アクチュエータの物性値、及び屈曲変位の測定結果を表3に示す。
スクリーン印刷法により圧電材料を5μmの厚みで積層したこと以外は、実施例1の場合と同様にして、圧電膜型アクチュエータ(実施例5)を製造した。製造した圧電膜型アクチュエータの物性値、及び屈曲変位の測定結果を表4に示す。
Claims (6)
- 圧電/電歪性を有する多数の結晶粒子からなる膜状又は1以上の層を持つ層状の圧電/電歪体であって、
任意の厚み方向の断面において観察される多数の前記結晶粒子に占める、厚み方向の少なくともいずれかの外部との界面にその一部が露出している結晶粒子の個数割合が、80%以上である圧電/電歪体。 - 任意の厚み方向の断面において観察される多数の前記結晶粒子に占める、厚み方向の外部との両界面にその一部が露出している結晶粒子の個数割合が、50%以上である請求項1に記載の圧電/電歪体。
- 厚みが1〜20μmである請求項1又は2に記載の圧電/電歪体。
- 任意の厚み方向の断面において観察される多数の前記結晶粒子の、厚み方向の粒子径(T)に対する幅方向の粒子径(W)の比(W/T)の平均値が、1.3以上である請求項1〜3のいずれか一項に記載の記載の圧電/電歪体。
- 請求項1〜4のいずれか一項に記載の複数の圧電/電歪体と、膜状又は層状の複数の電極とを備え、
複数の前記圧電/電歪体が、複数の前記電極により交互に挟持・積層された圧電/電歪積層体。 - セラミックからなる基板と、前記基板上に配設される、少なくとも1の圧電/電歪部及び少なくとも1対の電極を有する圧電/電歪駆動部とを備えてなり、前記圧電/電歪駆動部の駆動により前記基板が変位する圧電/電歪アクチュエータであって、
前記圧電/電歪部が、請求項1〜4のいずれか一項に記載の圧電/電歪体により構成された圧電/電歪アクチュエータ。
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US11/305,661 US7417361B2 (en) | 2004-12-24 | 2005-12-16 | Piezoelectric/electrostrictive body, piezoelectric/electrostrictive laminate, and piezoelectric/electrostrictive actuator |
EP20050257880 EP1675192A3 (en) | 2004-12-24 | 2005-12-20 | Piezoelectric/electrostrictive body, piezoelectric/electrostrictive laminate, and piezoelectric/electrostrictive actuator |
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EP1975137A1 (en) | 2007-02-26 | 2008-10-01 | Ngk Insulator, Ltd. | Ceramic sheet, method for producing the same, and method for producing crystallographically-oriented ceramic |
JP2009040672A (ja) * | 2007-02-26 | 2009-02-26 | Ngk Insulators Ltd | 板状多結晶粒子、板状多結晶粒子の製造方法、結晶配向セラミックスの製造方法 |
JP2009046376A (ja) * | 2007-02-26 | 2009-03-05 | Ngk Insulators Ltd | セラミックスシート、その製造方法及び結晶配向セラミックスの製造方法 |
EP2086031A2 (en) | 2008-01-30 | 2009-08-05 | NGK Insulators, Ltd. | Piezoelectric/electrostrictive film element and method manufacturing the same |
EP2104153A2 (en) | 2008-03-21 | 2009-09-23 | NGK Insulators, Ltd. | Piezoelectric/electrostrictive film element |
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US8158255B2 (en) | 2007-02-26 | 2012-04-17 | Ngk Insulators, Ltd. | Plate-like polycrystalline particle, method for producing plate-like polycrystalline particles, and method for producing crystallographically-oriented ceramic |
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JP4782413B2 (ja) | 2011-09-28 |
US20060138900A1 (en) | 2006-06-29 |
EP1675192A2 (en) | 2006-06-28 |
EP1675192A3 (en) | 2006-07-05 |
US7417361B2 (en) | 2008-08-26 |
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