JP2005170693A - 圧電/電歪磁器組成物、圧電/電歪体、及び圧電/電歪膜型素子 - Google Patents
圧電/電歪磁器組成物、圧電/電歪体、及び圧電/電歪膜型素子 Download PDFInfo
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- JP2005170693A JP2005170693A JP2003408826A JP2003408826A JP2005170693A JP 2005170693 A JP2005170693 A JP 2005170693A JP 2003408826 A JP2003408826 A JP 2003408826A JP 2003408826 A JP2003408826 A JP 2003408826A JP 2005170693 A JP2005170693 A JP 2005170693A
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Abstract
【解決手段】Pb(Mg1/3Nb2/3)O3−PbTiO3−PbZrO3三成分固溶系組成物を主成分とし、NiをNiO換算で0.05〜3.0質量%、及びSiをSiO2換算で0.003〜0.01質量%それぞれ含有する圧電/電歪磁器組成物である。
【選択図】なし
Description
Pbx(Mgy/3Nb2/3)aTibZrcO3 …(1)
(上記式(1)中、0.95≦x≦1.05、0.8≦y≦1.0であり、かつa,b,cが、前記a,b,cの3つを座標軸とする座標中、(a,b,c)=(0.550,0.425,0.025)、(0.550,0.325,0.125)、(0.375,0.325,0.300)、(0.100,0.425,0.475)、(0.100,0.525,0.375)、(0.375,0.425,0.200)で囲まれる範囲の小数である(但し、a+b+c=1.000である))
Pbx{(Mg1-yNiy)(1/3)×aNb2/3}bTicZrdO3 …(2)
(上記式(2)中、0.95≦x≦1.05、0.05≦y≦0.20、0.90≦a≦1.10であり、かつb,c,dが、前記b,c,dを座標軸とする座標中、(b,c,d)=(0.550,0.425,0.025)、(0.550,0.325,0.125)、(0.375,0.325,0.300)、(0.100,0.425,0.475)、(0.100,0.525,0.375)、(0.375,0.425,0.200)で囲まれる範囲の小数である(但し、(b+c+d)=1.000である))
Pbx(Mgy/3Nb2/3)aTibZrcO3 …(1)
(上記式(1)中、0.95≦x≦1.05、0.8≦y≦1.0であり、かつa,b,cが、前記a,b,cの3つを座標軸とする座標中、(a,b,c)=(0.550,0.425,0.025)、(0.550,0.325,0.125)、(0.375,0.325,0.300)、(0.100,0.425,0.475)、(0.100,0.525,0.375)、(0.375,0.425,0.200)で囲まれる範囲の小数である(但し、a+b+c=1.000である))
不純物としてのSi源の含有量が種々異なる原材料、及び水を用いて、その組成が、Pb{(Mg0.87Ni0.13)1/3Nb2/3}0.20Ti0.43Zr0.37O3として表される、Pb(Mg、Ni)1/3Nb2/3O3−PbTiO3−PbZrO3三成分固溶系組成物を主成分とする、Si含有量の異なる4種類の圧電/電歪磁器組成物の粉末(実施例1,2、比較例1,2)を調製した。なお、誘導結合高周波プラズマ(ICP)分光分析で測定したSiO2換算のSi含有量は、それぞれ0.002質量%(比較例1)、0.003質量%(実施例1)、0.01質量%(実施例2)、及び0.02質量%(比較例2)であった。
実施例1,2、比較例1,2の圧電/電歪磁器組成物の粉末を使用し、0.5t/cm2の圧力で直径20mm×厚み6mmの大きさに圧粉成形して圧粉成形体を得た。得られた圧粉成形体をマグネシア容器内に収納し、1250℃で3時間焼成して焼成体を得た。得られた焼成体を、12mm×3mm×1mmの大きさに加工し、その両面に銀ペーストを塗布して電極を焼き付け、これを70℃のシリコンオイル中に浸漬するとともに、電極間に2kV/mmの直流電圧を15分間印加することにより分極して、圧電/電歪体(実施例3,4、比較例3,4)を得た。
Y2O3で安定化された、薄肉部が平坦なZrO2基体(薄肉部の寸法:1.6×1.1mm、厚さ:10μm)上に、白金からなる下部電極(寸法:1.2×0.8mm、厚さ:3μm)をスクリーン印刷法により形成し、1300℃、2時間の熱処理により基体と一体化させた。次いで、その上に、実施例1,2、比較例1,2の圧電/電歪磁器組成物のそれぞれからなる圧電/電歪材料を、スクリーン印刷法により、寸法1.3×0.9mm、厚さ10μmで積層した。次に、積層した圧電/電歪材料の上に、白金からなる内部電極(寸法:1.0×1.1mm、厚さ:3μm)をスクリーン印刷法により積層した。更に、内部電極上に前記圧電/電歪材料を、スクリーン印刷法により、寸法1.3×0.9mm、厚さ10μmで積層した。次いで、圧電/電歪材料と同一組成の雰囲気制御用材料を、雰囲気単位体積当たりのNiO換算量で0.15mg/cm3容器内に共存させて、1275℃、2時間熱処理した。熱処理後の圧電/電歪部の厚さは、何れも7μmであった。最後に、最上層の圧電/電歪部上に、金からなる上部電極(寸法:1.2×0.8mm、厚さ:0.5μm)をスクリーン印刷法により形成した後、熱処理して、2層の圧電・電歪部を備えた圧電/電歪膜型素子(実施例5,6、比較例5,6)を製造した。
Claims (19)
- Pb(Mg1/3Nb2/3)O3−PbTiO3−PbZrO3三成分固溶系組成物を主成分とし、NiをNiO換算で0.05〜3.0質量%、及びSiをSiO2換算で0.003〜0.01質量%それぞれ含有する圧電/電歪磁器組成物。
- 前記Pb(Mg1/3Nb2/3)O3−PbTiO3−PbZrO3三成分固溶系組成物の組成が、下記式(1)により表される請求項1に記載の圧電/電歪磁器組成物。
Pbx(Mgy/3Nb2/3)aTibZrcO3 …(1)
(上記式(1)中、0.95≦x≦1.05、0.8≦y≦1.0であり、かつa,b,cが、前記a,b,cの3つを座標軸とする座標中、(a,b,c)=(0.550,0.425,0.025)、(0.550,0.325,0.125)、(0.375,0.325,0.300)、(0.100,0.425,0.475)、(0.100,0.525,0.375)、(0.375,0.425,0.200)で囲まれる範囲の小数である(但し、a+b+c=1.000である)) - Pb(Mg、Ni)1/3Nb2/3O3−PbTiO3−PbZrO3三成分固溶系組成物を主成分とし、Siを、SiO2換算で0.003〜0.01質量%含有する圧電/電歪磁器組成物。
- 前記Pb(Mg、Ni)1/3Nb2/3O3−PbTiO3−PbZrO3三成分固溶系組成物の組成が、下記式(2)により表される請求項3に記載の圧電/電歪磁器組成物。
Pbx{(Mg1-yNiy)(1/3)×aNb2/3}bTicZrdO3 …(2)
(上記式(2)中、0.95≦x≦1.05、0.05≦y≦0.20、0.90≦a≦1.10であり、かつb,c,dが、前記b,c,dを座標軸とする座標中、(b,c,d)=(0.550,0.425,0.025)、(0.550,0.325,0.125)、(0.375,0.325,0.300)、(0.100,0.425,0.475)、(0.100,0.525,0.375)、(0.375,0.425,0.200)で囲まれる範囲の小数である(但し、(b+c+d)=1.000である)) - 請求項1又は2の圧電/電歪磁器組成物により構成された結晶粒子からなる圧電/電歪体。
- 前記結晶粒子の平均粒子径が、0.5〜5μmである請求項5に記載の圧電/電歪体。
- 請求項3又は4の圧電/電歪磁器組成物により構成された結晶粒子からなる圧電/電歪体。
- 前記結晶粒子の平均粒子径が、0.5〜5μmである請求項7に記載の圧電/電歪体。
- セラミックスからなる基体と、膜状の圧電/電歪部と、前記圧電/電歪部に電気的に接続される膜状の電極とを備え、前記圧電/電歪部が前記基体上に直接又は前記電極を介して固着されてなる圧電/電歪膜型素子であって、
前記圧電/電歪部が、請求項1又は2の圧電/電歪磁器組成物により構成された結晶粒子からなる圧電/電歪膜型素子。 - 前記結晶粒子の平均粒子径が、0.5〜5μmである請求項9に記載の圧電/電歪膜型素子。
- 前記圧電/電歪部及び前記電極をそれぞれ複数備え、複数の前記圧電/電歪部が、複数の前記電極により交互に挟持・積層されてなる請求項9又は10に記載の圧電/電歪膜型素子。
- 一の前記圧電/電歪部の厚みが、0.5〜50μmである請求項9〜11のいずれか一項に記載の圧電/電歪膜型素子。
- セラミックスからなる基体と、膜状の圧電/電歪部と、前記圧電/電歪部に電気的に接続される膜状の電極とを備え、前記圧電/電歪部が前記基体上に直接又は前記電極を介して固着されてなる圧電/電歪膜型素子であって、
前記圧電/電歪部が、請求項3又は4の圧電/電歪磁器組成物により構成された結晶粒子からなる圧電/電歪膜型素子。 - 前記結晶粒子の平均粒子径が、0.5〜5μmである請求項13に記載の圧電/電歪膜型素子。
- 前記圧電/電歪部及び前記電極をそれぞれ複数備え、複数の前記圧電/電歪部が、複数の前記電極により交互に挟持・積層されてなる請求項13又は14に記載の圧電/電歪膜型素子。
- 一の前記圧電/電歪部の厚みが、0.5〜50μmである請求項13〜15のいずれか一項に記載の圧電/電歪膜型素子。
- セラミックスからなる基体と、圧電/電歪磁器組成物からなる複数の膜状の圧電/電歪部と、前記圧電/電歪部に電気的に接続される、複数の膜状の電極とを備え、前記圧電/電歪部と前記電極とが前記基体上に交互に積層され、かつ、前記圧電/電歪部のうちの最下層に位置する最下圧電/電歪部が、前記基体上に直接、又は前記電極のうちの最下層に位置する最下電極を介して固着されてなる圧電/電歪膜型素子であって、
少なくとも一の前記圧電/電歪部(第一の圧電/電歪部)が、請求項1又は2の圧電/電歪磁器組成物により構成されてなるとともに、
少なくとも一の、前記第一の圧電/電歪部以外の圧電/電歪部(第二の圧電/電歪部)が、請求項3又は4の圧電/電歪磁器組成物により構成されてなる圧電/電歪膜型素子。 - 複数の前記圧電/電歪部の厚みが、それぞれ0.5〜50μmである請求項17に記載の圧電/電歪膜型素子。
- 前記最下圧電/電歪部を構成する前記圧電/電歪磁器組成物の、NiOに換算したNiの含有率が、前記最下圧電/電歪部以外の前記圧電/電歪部を構成する前記圧電/電歪磁器組成物の、NiOに換算したNiの含有率よりも小さい請求項17又は18に記載の圧電/電歪膜型素子。
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JP2007001838A (ja) * | 2005-06-27 | 2007-01-11 | Ngk Insulators Ltd | 圧電/電歪磁器組成物、圧電/電歪体、及び圧電/電歪膜型素子 |
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JP2007284344A (ja) * | 2006-04-13 | 2007-11-01 | Agency For Science Technology & Research | 低焼結温度を有する強誘電性セラミック材料 |
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