JP2006173634A - ピクセルアレイを備えるｃｍｏｓイメージセンサー - Google Patents

ピクセルアレイを備えるｃｍｏｓイメージセンサー Download PDF

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Publication number
JP2006173634A
JP2006173634A JP2005363713A JP2005363713A JP2006173634A JP 2006173634 A JP2006173634 A JP 2006173634A JP 2005363713 A JP2005363713 A JP 2005363713A JP 2005363713 A JP2005363713 A JP 2005363713A JP 2006173634 A JP2006173634 A JP 2006173634A
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JP
Japan
Prior art keywords
unit
pixel
pattern
light receiving
image sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2005363713A
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English (en)
Japanese (ja)
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JP2006173634A5 (enExample
Inventor
Jung-Hyun Nam
丁鉉 南
Yun Hee Lee
允熙 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020040107181A external-priority patent/KR100690880B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006173634A publication Critical patent/JP2006173634A/ja
Publication of JP2006173634A5 publication Critical patent/JP2006173634A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
JP2005363713A 2004-12-16 2005-12-16 ピクセルアレイを備えるｃｍｏｓイメージセンサー Pending JP2006173634A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040107181A KR100690880B1 (ko) 2004-12-16 2004-12-16 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법
US11/264,437 US7710477B2 (en) 2004-12-16 2005-11-01 CMOS image sensors having pixel arrays with uniform light sensitivity

Publications (2)

Publication Number Publication Date
JP2006173634A true JP2006173634A (ja) 2006-06-29
JP2006173634A5 JP2006173634A5 (enExample) 2009-02-05

Family

ID=36673962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005363713A Pending JP2006173634A (ja) 2004-12-16 2005-12-16 ピクセルアレイを備えるｃｍｏｓイメージセンサー

Country Status (3)

Country Link
JP (1) JP2006173634A (enExample)
DE (1) DE102005060518B4 (enExample)
TW (1) TWI282621B (enExample)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235748A (ja) * 2007-03-23 2008-10-02 Seiko Epson Corp 固体撮像装置
JP2010067774A (ja) * 2008-09-10 2010-03-25 Canon Inc 光電変換装置及び撮像システム
JP2012199583A (ja) * 2005-09-12 2012-10-18 Intellectual Venturesii Llc 光干渉を減少させたイメージセンサ
JP2012212940A (ja) * 2012-07-26 2012-11-01 Canon Inc 光電変換装置および光電変換装置を用いた撮像システム
US8415602B2 (en) 2008-11-25 2013-04-09 Sony Corporation Solid-state imaging device and electronic apparatus having an element isolator in a semiconductor substrate
JP2013089880A (ja) * 2011-10-20 2013-05-13 Canon Inc 固体撮像装置およびカメラ
US8638379B2 (en) 2008-12-22 2014-01-28 Sony Corporation Solid-state image pickup device with shared amplifier nearest pixel corresponding to shortest light wavelength and electronic apparatus using the same
JP2015527570A (ja) * 2012-06-20 2015-09-17 コーニンクレッカ フィリップス エヌ ヴェ Ｘ線検出器のピクセルレイアウト
US9900530B2 (en) 2014-12-15 2018-02-20 Canon Kabushiki Kaisha Image sensing system
JP2020077879A (ja) * 2010-08-27 2020-05-21 株式会社半導体エネルギー研究所 半導体装置
KR20200119672A (ko) * 2019-04-10 2020-10-20 삼성전자주식회사 공유 픽셀들을 포함하는 이미지 센서
CN112038379A (zh) * 2019-11-27 2020-12-04 友达光电股份有限公司 像素阵列基板
CN113410176A (zh) * 2020-03-16 2021-09-17 合肥晶合集成电路股份有限公司 Oled器件及其制造方法
JP2021528653A (ja) * 2018-06-29 2021-10-21 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 周囲光検出器、検出器アレイ、および方法
JP2023099593A (ja) * 2017-12-13 2023-07-13 パナソニックＩｐマネジメント株式会社 撮像装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9235285B2 (en) 2013-05-13 2016-01-12 Himax Technologies Limited Pixel matrix, touch display device and drving method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140539A (ja) * 1997-07-18 1999-02-12 Mitsuteru Kimura フローティング部を有する半導体装置及びフローティング単結晶薄膜の形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124438A (ja) * 1998-10-19 2000-04-28 Toshiba Corp 固体撮像装置
JP2004104203A (ja) * 2002-09-05 2004-04-02 Toshiba Corp 固体撮像装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140539A (ja) * 1997-07-18 1999-02-12 Mitsuteru Kimura フローティング部を有する半導体装置及びフローティング単結晶薄膜の形成方法

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698266B2 (en) 2005-09-12 2014-04-15 Intellectual Ventures Ii Llc Image sensor with decreased optical interference between adjacent pixels
JP2012199583A (ja) * 2005-09-12 2012-10-18 Intellectual Venturesii Llc 光干渉を減少させたイメージセンサ
JP2008235748A (ja) * 2007-03-23 2008-10-02 Seiko Epson Corp 固体撮像装置
JP2010067774A (ja) * 2008-09-10 2010-03-25 Canon Inc 光電変換装置及び撮像システム
US8415602B2 (en) 2008-11-25 2013-04-09 Sony Corporation Solid-state imaging device and electronic apparatus having an element isolator in a semiconductor substrate
US8638379B2 (en) 2008-12-22 2014-01-28 Sony Corporation Solid-state image pickup device with shared amplifier nearest pixel corresponding to shortest light wavelength and electronic apparatus using the same
JP2020077879A (ja) * 2010-08-27 2020-05-21 株式会社半導体エネルギー研究所 半導体装置
JP2013089880A (ja) * 2011-10-20 2013-05-13 Canon Inc 固体撮像装置およびカメラ
JP2015527570A (ja) * 2012-06-20 2015-09-17 コーニンクレッカ フィリップス エヌ ヴェ Ｘ線検出器のピクセルレイアウト
JP2012212940A (ja) * 2012-07-26 2012-11-01 Canon Inc 光電変換装置および光電変換装置を用いた撮像システム
US9900530B2 (en) 2014-12-15 2018-02-20 Canon Kabushiki Kaisha Image sensing system
JP7641546B2 (ja) 2017-12-13 2025-03-07 パナソニックＩｐマネジメント株式会社 撮像装置
JP2023099593A (ja) * 2017-12-13 2023-07-13 パナソニックＩｐマネジメント株式会社 撮像装置
JP2021528653A (ja) * 2018-06-29 2021-10-21 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 周囲光検出器、検出器アレイ、および方法
JP7186247B2 (ja) 2018-06-29 2022-12-08 エイエムエス－オスラム インターナショナル ゲーエムベーハー 周囲光検出器、検出器アレイ、および方法
KR102609559B1 (ko) 2019-04-10 2023-12-04 삼성전자주식회사 공유 픽셀들을 포함하는 이미지 센서
KR20200119672A (ko) * 2019-04-10 2020-10-20 삼성전자주식회사 공유 픽셀들을 포함하는 이미지 센서
US12328961B2 (en) 2019-04-10 2025-06-10 Samsung Electronics Co., Ltd. Image sensor including shared pixels
CN112038379B (zh) * 2019-11-27 2023-06-30 友达光电股份有限公司 像素阵列基板
CN112038379A (zh) * 2019-11-27 2020-12-04 友达光电股份有限公司 像素阵列基板
CN113410176A (zh) * 2020-03-16 2021-09-17 合肥晶合集成电路股份有限公司 Oled器件及其制造方法
CN113410176B (zh) * 2020-03-16 2023-10-27 合肥晶合集成电路股份有限公司 Oled器件及其制造方法

Also Published As

Publication number Publication date
DE102005060518A1 (de) 2006-08-03
DE102005060518B4 (de) 2015-02-19
TWI282621B (en) 2007-06-11
TW200627637A (en) 2006-08-01

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