TWI282621B - CMOS image sensors having pixel arrays with uniform light sensitivity - Google Patents
CMOS image sensors having pixel arrays with uniform light sensitivity Download PDFInfo
- Publication number
- TWI282621B TWI282621B TW094144658A TW94144658A TWI282621B TW I282621 B TWI282621 B TW I282621B TW 094144658 A TW094144658 A TW 094144658A TW 94144658 A TW94144658 A TW 94144658A TW I282621 B TWI282621 B TW I282621B
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- image sensing
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
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- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040107181A KR100690880B1 (ko) | 2004-12-16 | 2004-12-16 | 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법 |
| US11/264,437 US7710477B2 (en) | 2004-12-16 | 2005-11-01 | CMOS image sensors having pixel arrays with uniform light sensitivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200627637A TW200627637A (en) | 2006-08-01 |
| TWI282621B true TWI282621B (en) | 2007-06-11 |
Family
ID=36673962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094144658A TWI282621B (en) | 2004-12-16 | 2005-12-16 | CMOS image sensors having pixel arrays with uniform light sensitivity |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2006173634A (enExample) |
| DE (1) | DE102005060518B4 (enExample) |
| TW (1) | TWI282621B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9235285B2 (en) | 2013-05-13 | 2016-01-12 | Himax Technologies Limited | Pixel matrix, touch display device and drving method thereof |
| CN104412129B (zh) * | 2012-06-20 | 2018-05-25 | 皇家飞利浦有限公司 | X射线探测器像素布局 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7598581B2 (en) | 2005-09-12 | 2009-10-06 | Crosstek Capital, LLC | Image sensor with decreased optical interference between adjacent pixels |
| JP5245267B2 (ja) * | 2007-03-23 | 2013-07-24 | セイコーエプソン株式会社 | 固体撮像装置 |
| JP5274166B2 (ja) * | 2008-09-10 | 2013-08-28 | キヤノン株式会社 | 光電変換装置及び撮像システム |
| JP4978614B2 (ja) | 2008-11-25 | 2012-07-18 | ソニー株式会社 | 固体撮像装置 |
| JP5109962B2 (ja) | 2008-12-22 | 2012-12-26 | ソニー株式会社 | 固体撮像装置および電子機器 |
| JP5763474B2 (ja) * | 2010-08-27 | 2015-08-12 | 株式会社半導体エネルギー研究所 | 光センサ |
| JP6071183B2 (ja) * | 2011-10-20 | 2017-02-01 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| JP5539458B2 (ja) * | 2012-07-26 | 2014-07-02 | キヤノン株式会社 | 光電変換装置および光電変換装置を用いた撮像システム |
| JP2016115815A (ja) | 2014-12-15 | 2016-06-23 | キヤノン株式会社 | 撮像装置および撮像システム |
| CN109920808B (zh) * | 2017-12-13 | 2024-05-14 | 松下知识产权经营株式会社 | 摄像装置 |
| US10852182B2 (en) * | 2018-06-29 | 2020-12-01 | Osram Opto Semiconductors Gmbh | Ambient light detector, detector array and method |
| KR102609559B1 (ko) * | 2019-04-10 | 2023-12-04 | 삼성전자주식회사 | 공유 픽셀들을 포함하는 이미지 센서 |
| US11086452B2 (en) * | 2019-11-27 | 2021-08-10 | Au Optronics Corporation | Pixel array substrate |
| CN113410176B (zh) * | 2020-03-16 | 2023-10-27 | 合肥晶合集成电路股份有限公司 | Oled器件及其制造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1140539A (ja) * | 1997-07-18 | 1999-02-12 | Mitsuteru Kimura | フローティング部を有する半導体装置及びフローティング単結晶薄膜の形成方法 |
| JP2000124438A (ja) * | 1998-10-19 | 2000-04-28 | Toshiba Corp | 固体撮像装置 |
| JP2004104203A (ja) * | 2002-09-05 | 2004-04-02 | Toshiba Corp | 固体撮像装置 |
-
2005
- 2005-12-12 DE DE102005060518.4A patent/DE102005060518B4/de not_active Expired - Lifetime
- 2005-12-16 JP JP2005363713A patent/JP2006173634A/ja active Pending
- 2005-12-16 TW TW094144658A patent/TWI282621B/zh active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104412129B (zh) * | 2012-06-20 | 2018-05-25 | 皇家飞利浦有限公司 | X射线探测器像素布局 |
| US9235285B2 (en) | 2013-05-13 | 2016-01-12 | Himax Technologies Limited | Pixel matrix, touch display device and drving method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102005060518A1 (de) | 2006-08-03 |
| DE102005060518B4 (de) | 2015-02-19 |
| JP2006173634A (ja) | 2006-06-29 |
| TW200627637A (en) | 2006-08-01 |
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