JP2006135251A - レーザ結晶化装置 - Google Patents

レーザ結晶化装置 Download PDF

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Publication number
JP2006135251A
JP2006135251A JP2004325308A JP2004325308A JP2006135251A JP 2006135251 A JP2006135251 A JP 2006135251A JP 2004325308 A JP2004325308 A JP 2004325308A JP 2004325308 A JP2004325308 A JP 2004325308A JP 2006135251 A JP2006135251 A JP 2006135251A
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JP
Japan
Prior art keywords
laser
substrate support
phase change
substrate
crystallization apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004325308A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006135251A5 (enrdf_load_stackoverflow
Inventor
Motoyasu Terao
元康 寺尾
Yoshiaki Ogino
義明 荻野
Yasushi Horiguchi
泰視 堀口
Kotaro Fujiyoshi
幸太郎 藤吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Information and Telecommunication Engineering Ltd
Original Assignee
Hitachi Computer Peripherals Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Computer Peripherals Co Ltd, Hitachi Ltd filed Critical Hitachi Computer Peripherals Co Ltd
Priority to JP2004325308A priority Critical patent/JP2006135251A/ja
Priority to KR1020050010324A priority patent/KR101100441B1/ko
Publication of JP2006135251A publication Critical patent/JP2006135251A/ja
Publication of JP2006135251A5 publication Critical patent/JP2006135251A5/ja
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60G—VEHICLE SUSPENSION ARRANGEMENTS
    • B60G11/00—Resilient suspensions characterised by arrangement, location or kind of springs
    • B60G11/26—Resilient suspensions characterised by arrangement, location or kind of springs having fluid springs only, e.g. hydropneumatic springs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60G—VEHICLE SUSPENSION ARRANGEMENTS
    • B60G2202/00—Indexing codes relating to the type of spring, damper or actuator
    • B60G2202/10—Type of spring
    • B60G2202/15—Fluid spring
    • B60G2202/152—Pneumatic spring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60G—VEHICLE SUSPENSION ARRANGEMENTS
    • B60G2204/00—Indexing codes related to suspensions per se or to auxiliary parts
    • B60G2204/40—Auxiliary suspension parts; Adjustment of suspensions
    • B60G2204/43—Fittings, brackets or knuckles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60G—VEHICLE SUSPENSION ARRANGEMENTS
    • B60G2206/00—Indexing codes related to the manufacturing of suspensions: constructional features, the materials used, procedures or tools
    • B60G2206/01—Constructional features of suspension elements, e.g. arms, dampers, springs
    • B60G2206/012—Hollow or tubular elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60G—VEHICLE SUSPENSION ARRANGEMENTS
    • B60G2300/00—Indexing codes relating to the type of vehicle
    • B60G2300/02—Trucks; Load vehicles
    • B60G2300/024—Light trucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60G—VEHICLE SUSPENSION ARRANGEMENTS
    • B60G2600/00—Indexing codes relating to particular elements, systems or processes used on suspension systems or suspension control systems
    • B60G2600/22—Magnetic elements
    • B60G2600/26—Electromagnets; Solenoids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
    • B60Y2200/00—Type of vehicle
    • B60Y2200/10—Road Vehicles
    • B60Y2200/11—Passenger cars; Automobiles
    • B60Y2200/116—Ambulances
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
    • B60Y2200/00—Type of vehicle
    • B60Y2200/10—Road Vehicles
    • B60Y2200/14—Trucks; Load vehicles, Busses
    • B60Y2200/141—Light trucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Memories (AREA)
JP2004325308A 2004-11-09 2004-11-09 レーザ結晶化装置 Pending JP2006135251A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004325308A JP2006135251A (ja) 2004-11-09 2004-11-09 レーザ結晶化装置
KR1020050010324A KR101100441B1 (ko) 2004-11-09 2005-02-04 레이저 초기 결정화 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004325308A JP2006135251A (ja) 2004-11-09 2004-11-09 レーザ結晶化装置

Publications (2)

Publication Number Publication Date
JP2006135251A true JP2006135251A (ja) 2006-05-25
JP2006135251A5 JP2006135251A5 (enrdf_load_stackoverflow) 2007-06-28

Family

ID=36728495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004325308A Pending JP2006135251A (ja) 2004-11-09 2004-11-09 レーザ結晶化装置

Country Status (2)

Country Link
JP (1) JP2006135251A (enrdf_load_stackoverflow)
KR (1) KR101100441B1 (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009020927A (ja) * 2007-07-10 2009-01-29 Hitachi Computer Peripherals Co Ltd 相変化方法及び相変化装置
KR101001551B1 (ko) * 2008-06-18 2010-12-17 삼성모바일디스플레이주식회사 레이저 어닐링 장치
JP2015520507A (ja) * 2012-07-25 2015-07-16 シャンハイ マイクロ エレクトロニクス イクイプメント カンパニー リミティド レーザアニーリング装置及びレーザアニーリング方法
JP2018049897A (ja) * 2016-09-21 2018-03-29 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
JP2021077904A (ja) * 2021-01-21 2021-05-20 株式会社日本製鋼所 レーザ照射装置
JPWO2021131711A1 (enrdf_load_stackoverflow) * 2019-12-26 2021-07-01

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100810633B1 (ko) * 2006-05-17 2008-03-06 삼성에스디아이 주식회사 레이저 조사장치, 레이저 결정화 장치 및 그를 이용한결정화 방법
JP2008093682A (ja) * 2006-10-10 2008-04-24 Tokyo Electron Ltd レーザ発光装置の位置調整方法
KR100939679B1 (ko) * 2007-12-11 2010-02-03 (주)가하 자동 초점 조절 장치 및 그 방법
JP6602207B2 (ja) * 2016-01-07 2019-11-06 株式会社ディスコ ＳｉＣウエーハの生成方法
DE102016116241A1 (de) * 2016-08-31 2018-03-01 Infineon Technologies Ag Verfahren zum bearbeiten eines wafers und verfahren zum bearbeiten eines trägers
KR102000015B1 (ko) * 2017-05-18 2019-07-17 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102117355B1 (ko) * 2018-09-27 2020-06-02 세메스 주식회사 기판 처리 장치

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150238A (en) * 1979-05-10 1980-11-22 Matsushita Electric Ind Co Ltd Method of irradiating laser beam
JPS58197816A (ja) * 1982-05-14 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> 薄膜結晶の製造方法
JPS61179524A (ja) * 1985-02-04 1986-08-12 Toshiba Corp 多結晶シリコン膜の単結晶方法
JPS62222442A (ja) * 1986-03-22 1987-09-30 Nippon Telegr & Teleph Corp <Ntt> 書換型光記録媒体
JPH0227731A (ja) * 1988-07-15 1990-01-30 Seiko Epson Corp 半導体装置
JPH06232271A (ja) * 1993-01-29 1994-08-19 Nippon Telegr & Teleph Corp <Ntt> 結線材料及び入出力制御方法
JPH0724587A (ja) * 1993-07-13 1995-01-27 Matsushita Electric Ind Co Ltd レーザ照射装置
JPH1126393A (ja) * 1997-07-09 1999-01-29 Sanyo Electric Co Ltd レーザーアニール装置
JP2002299279A (ja) * 2001-03-30 2002-10-11 Iwate Prefecture レーザー加熱装置及びレーザー加熱方法
JP2003234288A (ja) * 2002-02-07 2003-08-22 Sony Corp 多結晶半導体膜と半導体素子の製造方法及び製造装置
WO2003089184A1 (en) * 2002-04-18 2003-10-30 Applied Materials, Inc. Thermal flux processing by scanning electromagnetic radiation
JP2004103628A (ja) * 2002-09-05 2004-04-02 Hitachi Ltd レーザアニール装置及びｔｆｔ基板のレーザアニール方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332257A (ja) 2002-05-17 2003-11-21 Fujitsu Ltd 半導体結晶化方法及び装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150238A (en) * 1979-05-10 1980-11-22 Matsushita Electric Ind Co Ltd Method of irradiating laser beam
JPS58197816A (ja) * 1982-05-14 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> 薄膜結晶の製造方法
JPS61179524A (ja) * 1985-02-04 1986-08-12 Toshiba Corp 多結晶シリコン膜の単結晶方法
JPS62222442A (ja) * 1986-03-22 1987-09-30 Nippon Telegr & Teleph Corp <Ntt> 書換型光記録媒体
JPH0227731A (ja) * 1988-07-15 1990-01-30 Seiko Epson Corp 半導体装置
JPH06232271A (ja) * 1993-01-29 1994-08-19 Nippon Telegr & Teleph Corp <Ntt> 結線材料及び入出力制御方法
JPH0724587A (ja) * 1993-07-13 1995-01-27 Matsushita Electric Ind Co Ltd レーザ照射装置
JPH1126393A (ja) * 1997-07-09 1999-01-29 Sanyo Electric Co Ltd レーザーアニール装置
JP2002299279A (ja) * 2001-03-30 2002-10-11 Iwate Prefecture レーザー加熱装置及びレーザー加熱方法
JP2003234288A (ja) * 2002-02-07 2003-08-22 Sony Corp 多結晶半導体膜と半導体素子の製造方法及び製造装置
WO2003089184A1 (en) * 2002-04-18 2003-10-30 Applied Materials, Inc. Thermal flux processing by scanning electromagnetic radiation
JP2004103628A (ja) * 2002-09-05 2004-04-02 Hitachi Ltd レーザアニール装置及びｔｆｔ基板のレーザアニール方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009020927A (ja) * 2007-07-10 2009-01-29 Hitachi Computer Peripherals Co Ltd 相変化方法及び相変化装置
KR101001551B1 (ko) * 2008-06-18 2010-12-17 삼성모바일디스플레이주식회사 레이저 어닐링 장치
JP2015520507A (ja) * 2012-07-25 2015-07-16 シャンハイ マイクロ エレクトロニクス イクイプメント カンパニー リミティド レーザアニーリング装置及びレーザアニーリング方法
US9455164B2 (en) 2012-07-25 2016-09-27 Shanghai Micro Electronics Equipment Co., Ltd. Laser annealing apparatus and laser annealing method
JP2018049897A (ja) * 2016-09-21 2018-03-29 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
CN114830295A (zh) * 2019-12-26 2022-07-29 东京毅力科创株式会社 基板处理方法和基板处理装置
JPWO2021131711A1 (enrdf_load_stackoverflow) * 2019-12-26 2021-07-01
WO2021131711A1 (ja) * 2019-12-26 2021-07-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7304433B2 (ja) 2019-12-26 2023-07-06 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TWI867116B (zh) * 2019-12-26 2024-12-21 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
JP2025072682A (ja) * 2019-12-26 2025-05-09 東京エレクトロン株式会社 基板処理方法及び基板処理システム
TWI884111B (zh) * 2019-12-26 2025-05-11 日商東京威力科創股份有限公司 基板處理方法、基板處理裝置及基板處理系統
US12322656B2 (en) 2019-12-26 2025-06-03 Tokyo Electron Limited Substrate laser processing method and substrate laser processing apparatus
CN114830295B (zh) * 2019-12-26 2025-06-10 东京毅力科创株式会社 基板处理方法和基板处理装置
JP7727869B2 (ja) 2019-12-26 2025-08-21 東京エレクトロン株式会社 基板処理方法及び基板処理システム
JP2021077904A (ja) * 2021-01-21 2021-05-20 株式会社日本製鋼所 レーザ照射装置
JP7159363B2 (ja) 2021-01-21 2022-10-24 Ｊｓｗアクティナシステム株式会社 レーザ照射装置

Also Published As

Publication number Publication date
KR20060041687A (ko) 2006-05-12
KR101100441B1 (ko) 2011-12-29

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