JP2006114803A - 半導体製造装置、液量監視装置、半導体製造装置の液体材料監視方法、及び、液量監視方法 - Google Patents
半導体製造装置、液量監視装置、半導体製造装置の液体材料監視方法、及び、液量監視方法 Download PDFInfo
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Abstract
【解決手段】 本発明の半導体製造装置100は、液体材料を収容する容器Xb,Ab,Bb,Cbを含み、該容器から前記液体材料を供給する液体材料供給部と、前記液体材料供給部により供給された前記液体材料を気化させてガスを生成する液体気化部と、前記液体気化部から供給される前記ガスを用いて成膜処理を行う処理部と、前記処理部を排気する排気部と、前記容器の底部に配置され、前記液体材料の液位を音波により検出する液位検出器Xs,As,Bs,Csと、を具備することを特徴とする。
【選択図】図3
Description
半導体製造装置100は、液体有機金属や有機金属溶液などの液体材料を供給する液体材料供給部110と、液体材料供給部110から供給された液体材料を気化してガスを生成する気化器(液体気化部)120と、気化器120から供給されたガスに基づいて成膜を行う処理部130と、気化器120、処理部130及び液体材料供給部110を排気するための排気部140とを備えている。
次に、本実施形態の動作について説明する。本実施形態では、図3に示す制御部100Xにおいて動作プログラムを実行することにより、装置全体を自動的に動作させることができるように構成されている。例えば、動作プログラムはMPUの内部メモリに格納され、この動作プログラムは内部メモリから読み出され、CPUによって実行される。また、動作プログラムは種々の動作パラメータを有し、操作部100Pからの入力操作により、上記の動作パラメータを適宜に設定できるように構成することが好ましい。
(1)半導体製造装置において、音波を用いて液位を検出する液位検出器を容器底部に配置し、液体材料と非接触で液位を検出できるように構成したことにより、容器内の液体材料の実際の残量を正確に検出することができ、実際の液面を適時に確認して残量推定値のずれを防止ことなどが可能になるため、高価な液体材料の無駄を低減でき、半導体の製造コストの削減を図ることが可能になる。
Claims (12)
- 液体材料を収容する容器を含み、該容器から前記液体材料を供給する液体材料供給部と、
前記液体材料供給部により供給された前記液体材料を気化させてガスを生成する液体気化部と、
前記液体気化部から供給される前記ガスを用いて処理を行う処理部と、
前記処理部を排気する排気部と、
前記容器の底部に配置され、前記液体材料の液位を音波により検出する液位検出器と、
を具備することを特徴とする半導体製造装置。 - 液体を収容する容器と、
前記容器に接続された液体供給ラインと、
前記液体供給ラインの途中に設けられた流量制御器若しくは流量検出器と、
前記容器の底部に配置され、前記液体の液位を音波により検出する液位検出器と、
前記流量制御器に対する流量設定値若しくは前記流量検出器による流量検出値に基づいて液体使用量若しくは前記容器内の液体残量を算出する液量算出手段と、
前記液量算出手段により算出された前記液体使用量若しくは前記液体残量を、前記液位検出器により検出された液位検出値により修正する液量修正手段と、
を具備することを特徴とする液量監視装置。 - 前記液量修正手段は、前記液体使用量若しくは前記液体残量を前記液位検出値に基づいて導出された値に更新する手段であることを特徴とする請求項2に記載の液量監視装置。
- 前記液量修正手段は、前記液体使用量若しくは前記液体残量が既定値になったときに修正を行うことを特徴とする請求項2又は3に記載の液量監視装置。
- 前記液量修正手段は、前記液体使用量若しくは前記液体残量及び前記液位検出値に基づいて修正パラメータを予め算出し、その後、該修正パラメータを前記液体使用量若しくは前記液体残量に適用して修正を行うことを特徴とする請求項2に記載の液量監視装置。
- 前記液量修正手段は、前記液体使用量若しくは前記液体残量の既定範囲における前記液体使用量若しくは前記液体残量の変化量と前記液位検出値の変化量とを比較して前記修正パラメータを算出することを特徴とする請求項5に記載の液量監視装置。
- 液体材料を収容する容器から前記液体材料を送り出して気化させてガスを生成し、前記ガスを処理部に送って処理を行う半導体製造装置の液体材料監視方法であって、
前記容器の底部に前記液体材料の液位を音波により検出する液位検出器を配置し、該液位検出器の液位検出値を用いて前記容器内の前記液体材料の残量を確認することを特徴とする半導体製造装置の液体材料監視方法。 - 液体を収容する容器に接続された液体供給ラインを介して前記液体を供給する過程において前記容器内の前記液体を監視する液量監視方法であって、
前記液体供給ラインにおける前記液体の流量に基づいて液体使用量若しくは前記容器内の液体残量を算出し、
前記容器の底部に前記液体の液位を音波により検出する液位検出器を配置し、
前記液体使用量若しくは前記液体残量を、前記液位検出器により検出された液位検出値に基づいて修正することを特徴とする液量監視方法。 - 前記液体使用量若しくは前記液体残量は、前記液位検出値に基づいて導出された値に更新することにより修正されることを特徴とする請求項8に記載の液量監視方法。
- 前記液体使用量若しくは前記液体残量は、既定値になったときに修正されることを特徴とする請求項8又は9に記載の液量監視方法。
- 前記液体使用量若しくは前記液体残量及び前記液位検出値に基づいて修正パラメータを予め算出し、その後、該修正パラメータを前記液体使用量若しくは前記液体残量に適用することにより修正を行うことを特徴とする請求項8に記載の液量監視方法。
- 前記修正パラメータは、既定範囲における前記液体使用量若しくは前記液体残量の変化量と前記液位検出値の変化量との比較により算出されることを特徴とする請求項11に記載の液量監視方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2004302563A JP4626956B2 (ja) | 2004-10-18 | 2004-10-18 | 半導体製造装置、液量監視装置、半導体製造装置の液体材料監視方法、及び、液量監視方法 |
US11/577,456 US20070261735A1 (en) | 2004-10-18 | 2005-10-18 | Liquid Amount Monitoring Apparatus, Semiconductor Manufacturing Apparatus Having the Liquid Amount Monitoring Apparatus Mounted Thereon, and Liquid Material/Liquid Amount Monitoring Method |
PCT/JP2005/019136 WO2006043561A1 (ja) | 2004-10-18 | 2005-10-18 | 液量監視装置及び、液量監視装置を搭載する半導体製造装置及び、液体材料・液量監視方法 |
CNB2005800264403A CN100485871C (zh) | 2004-10-18 | 2005-10-18 | 液量监视装置、搭载液量监视装置的半导体制造装置、以及液体材料和液量的监视方法 |
KR1020077008705A KR100896833B1 (ko) | 2004-10-18 | 2005-10-18 | 액량 감시 장치, 액량 감시 장치를 탑재하는 반도체 제조장치, 및 액체 재료·액량 감시 방법 |
KR1020097001486A KR100935484B1 (ko) | 2004-10-18 | 2005-10-18 | 액량 감시 방법 |
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JP (1) | JP4626956B2 (ja) |
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JP2013233961A (ja) * | 2012-05-08 | 2013-11-21 | Nippon Shokubai Co Ltd | 密閉容器及び梱包体 |
WO2014007028A1 (ja) * | 2012-07-04 | 2014-01-09 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP2015009828A (ja) * | 2013-06-28 | 2015-01-19 | 日新製鋼株式会社 | 薬液用大型タンク |
JP2017085088A (ja) * | 2015-10-02 | 2017-05-18 | ラム リサーチ コーポレーションLam Research Corporation | 原子層堆積のための動的前駆体注入 |
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JP2013233961A (ja) * | 2012-05-08 | 2013-11-21 | Nippon Shokubai Co Ltd | 密閉容器及び梱包体 |
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WO2014007028A1 (ja) * | 2012-07-04 | 2014-01-09 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
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US11180850B2 (en) | 2014-08-22 | 2021-11-23 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
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US11970772B2 (en) | 2014-08-22 | 2024-04-30 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
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Also Published As
Publication number | Publication date |
---|---|
WO2006043561A1 (ja) | 2006-04-27 |
KR100935484B1 (ko) | 2010-01-06 |
CN100485871C (zh) | 2009-05-06 |
KR20070052354A (ko) | 2007-05-21 |
US20070261735A1 (en) | 2007-11-15 |
CN1993805A (zh) | 2007-07-04 |
JP4626956B2 (ja) | 2011-02-09 |
KR100896833B1 (ko) | 2009-05-12 |
KR20090018223A (ko) | 2009-02-19 |
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