JP2006108580A - 固体撮像装置およびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000007787 solid Substances 0.000 title abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 81
- 239000011347 resin Substances 0.000 claims description 66
- 229920005989 resin Polymers 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 24
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 169
- 239000010408 film Substances 0.000 description 93
- 239000000049 pigment Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 16
- 239000000975 dye Substances 0.000 description 15
- 238000002156 mixing Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 238000012546 transfer Methods 0.000 description 12
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011163 secondary particle Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
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Abstract
【解決手段】 半導体基板11上に、光電変換素子13と、当該光電変換素子13上に形成されたカラーフィルタ層21とを有する画素がマトリクス状に複数配置された固体撮像装置1であって、隣接する光電変換素子13との境界領域上において、形成面から突出するように形成される樹脂部20を備え、各カラーフィルタ層21は、隣接する樹脂部20の頂部間にわたって形成され、頂部に対応する周辺部における各カラーフィルタ層21の膜厚は、中央部よりも薄く形成されることを特徴とする。
【選択図】 図1
Description
これらの固体撮像装置30,40は、第一導電型(例えばN型)のシリコン半導体からなる半導体基板11に第二導電型となるP型の半導体ウエル領域12が形成され、このP型半導体ウエル領域12にマトリクス配列の各光電変換素子13を構成するための、N型半導体領域が形成される。
(1) まず、N型の半導体基板11上にこのN型半導体基板11と逆特性のPウエル層12をマトリクス状に複数形成し、各Pウエル層12の表面にN型拡散層(光電変換素子)13を形成する。Pウエル層12およびN型拡散層(光電変換素子)13は、一般にフォトリソ工程、イオン注入工程、熱拡散工程を繰り返すことにより形成される。
緑色カラーフィルタ層21Gの形成が終わると、緑色カラーフィルタ層21Gと同様の方法で青色カラーフィルタ層21B、赤色カラーフィルタ層21Rを、それぞれの定められた位置に形成する。
以上のように樹脂部20によって、その後に形成される各カラーフィルタ層21G,21B,21Rの境界部分を光電変換素子13上よりも薄膜化されるため、凹レンズとしての効果が期待でき、集効率が増し、感度を向上させることができる。
11 N型半導体基板
12 Pウエル層
13 光電変換素子
14 ゲート絶縁膜
15 転送電極
16 層間絶縁膜
17 遮光膜
18 表面保護膜
19 第1の透明平坦化膜
20 樹脂部
21 カラーフィルタ層
21G 緑色カラーフィルタ層
21B 青色カラーフィルタ層
21R 赤色カラーフィルタ層
22 第2の透明平坦化膜
23 マイクロレンズ
Claims (11)
- 半導体基板上に、光電変換素子と、当該光電変換素子上に形成されたカラーフィルタ層とを有する画素がマトリクス状に複数配置された固体撮像装置であって、
隣接する光電変換素子との境界領域上において、形成面から突出するように形成される樹脂部を備え、
前記各カラーフィルタ層は、隣接する樹脂部の頂部間にわたって形成され、
前記頂部に対応する周辺部における前記各カラーフィルタ層の膜厚は、中央部よりも薄く形成される
ことを特徴とする固体撮像装置。 - 前記カラーフィルタ層は、染料内填型のカラーレジストで形成される
ことを特徴とする請求項1記載の固体撮像装置。 - 前記樹脂部は、隣接する光電変換素子との境界領域上に格子状に形成され、
前記カラーフィルタ層は、凹レンズとして機能する
ことを特徴とする請求項1または請求項2記載の固体撮像装置。 - 前記樹脂部は、前記カラーフィルタ層よりも低い屈折率の材料で形成される
ことを特徴とする請求項1〜3のいずれか1項に記載の固体撮像装置。 - 前記固体撮像装置は、さらに前記光電変換素子とカラーフィルタ層との間に、前記形成面と面一に形成される第1の透明平坦化膜を備え、
前記カラーフィルタ層は、前記第1の透明平坦化膜よりも高い屈折率の材料で形成される
ことを特徴とする請求項1〜4のいずれか1項に記載の固体撮像装置。 - 前記固体撮像装置は、さらに前記カラーフィルタ層上に形成される第2の透明平坦化膜を備え、
前記第2の透明平坦化膜は、前記カラーフィルタ層よりも低い屈折率の材料で形成される
ことを特徴とする請求項4または5記載の固体撮像装置。 - 前記固体撮像装置は、さらに前記第2の透明平坦化膜上に形成されるマイクロレンズを備え、
前記マイクロレンズは、前記第2の透明平坦化膜よりも高い屈折率の材料で形成される
ことを特徴とする請求項6記載の固体撮像装置。 - 前記マイクロレンズは、前記カラーフィルタ層よりも高い屈折率の材料で形成される
ことを特徴とする請求項7記載の固体撮像装置。 - 半導体基板上に、光電変換素子と、当該光電変換素子上に形成されたカラーフィルタ層とを有する画素がマトリクス状に複数配置された固体撮像装置の製造方法であって、
隣接する光電変換素子との境界領域上において、形成面から突出するように樹脂部を形成する工程と、
隣接する樹脂部の頂部間にわたって、前記頂部に対応する周辺部における膜厚を、中央部よりも薄く前記各カラーフィルタ層を形成する工程と
を含むことを特徴とする固体撮像装置の製造方法。 - 前記固体撮像装置の製造方法は、さらに前記カラーフィルタ層の上にマイクロレンズを形成する工程を含み、
前記樹脂部を形成する工程では、前記マイクロレンズを形成するためのマスクを使用して前記樹脂部を形成する
ことを特徴とする請求項9記載の固体撮像装置の製造方法。 - 前記樹脂部はネガ型レジストで、前記マイクロレンズはポジ型レジストで、それぞれ形成される
ことを特徴とする請求項10記載の固体撮像装置の製造方法。
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JP2004296672A JP4822683B2 (ja) | 2004-10-08 | 2004-10-08 | 固体撮像装置およびその製造方法 |
US11/243,979 US7683302B2 (en) | 2004-10-08 | 2005-10-06 | Solid-state imaging device having on-chip color filter layers and solid-state imaging device manufacturing method of the solid-state imaging device |
CNA2005101086072A CN1763963A (zh) | 2004-10-08 | 2005-10-08 | 固体摄像器件及其制造方法 |
US12/698,345 US7989752B2 (en) | 2004-10-08 | 2010-02-02 | Solid-state imaging device and solid-state imaging device manufacturing method |
US13/155,571 US8134110B2 (en) | 2004-10-08 | 2011-06-08 | Solid-state imaging device and solid-state imaging device manufacturing method |
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Cited By (4)
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JP2008098345A (ja) * | 2006-10-11 | 2008-04-24 | Sony Corp | 固体撮像装置及びその製造方法並びにカメラ |
WO2011077695A1 (en) * | 2009-12-22 | 2011-06-30 | Canon Kabushiki Kaisha | Solid-state image pickup device and method of producing the same |
JP4880794B1 (ja) * | 2011-04-22 | 2012-02-22 | パナソニック株式会社 | 固体撮像装置とその製造方法 |
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KR102506837B1 (ko) * | 2017-11-20 | 2023-03-06 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
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Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01270362A (ja) * | 1988-04-22 | 1989-10-27 | Toshiba Corp | 固体撮像装置の製造方法 |
JPH0437165A (ja) * | 1990-06-01 | 1992-02-07 | Nec Corp | 固体撮像素子 |
JPH04257261A (ja) * | 1991-02-12 | 1992-09-11 | Sony Corp | 固体撮像装置 |
JPH0653457A (ja) * | 1992-08-03 | 1994-02-25 | Matsushita Electron Corp | カラー固体撮像装置 |
JPH06132502A (ja) * | 1992-10-15 | 1994-05-13 | Matsushita Electron Corp | 固体撮像装置 |
JPH0818025A (ja) * | 1994-06-30 | 1996-01-19 | Nec Corp | 固体撮像素子 |
JPH08316448A (ja) * | 1995-05-22 | 1996-11-29 | Matsushita Electron Corp | 固体撮像装置及びその製造方法 |
JPH0922995A (ja) * | 1995-05-02 | 1997-01-21 | Matsushita Electron Corp | 固体撮像装置及びその製造方法 |
JPH0945885A (ja) * | 1995-07-26 | 1997-02-14 | Lg Semicon Co Ltd | Ccd固体撮像素子及びその製造方法 |
JPH1114817A (ja) * | 1997-06-20 | 1999-01-22 | Sony Corp | 色フィルタの製造方法 |
JPH11154742A (ja) * | 1992-10-06 | 1999-06-08 | Matsushita Electron Corp | 固体撮像装置 |
JP2001237405A (ja) * | 2000-02-24 | 2001-08-31 | Victor Co Of Japan Ltd | 固体撮像装置および固体撮像装置の製造方法 |
JP2003060176A (ja) * | 2001-08-08 | 2003-02-28 | Toppan Printing Co Ltd | 固体撮像素子 |
JP2004047919A (ja) * | 2002-05-16 | 2004-02-12 | Victor Co Of Japan Ltd | 半導体集積回路の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4667092A (en) * | 1982-12-28 | 1987-05-19 | Nec Corporation | Solid-state image device with resin lens and resin contact layer |
JPS59122193A (ja) | 1982-12-28 | 1984-07-14 | Nec Corp | 固体撮像装置 |
JPH03107101A (ja) * | 1989-09-20 | 1991-05-07 | Dainippon Printing Co Ltd | 集光性フィルター及びその製造方法 |
JP2950714B2 (ja) * | 1993-09-28 | 1999-09-20 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
US5739548A (en) * | 1995-05-02 | 1998-04-14 | Matsushita Electronics Corporation | Solid state imaging device having a flattening layer and optical lenses |
JPH11284158A (ja) * | 1998-03-27 | 1999-10-15 | Sony Corp | 固体撮像素子と固体撮像素子の製造方法 |
JPH11337715A (ja) | 1998-05-21 | 1999-12-10 | Matsushita Electron Corp | カラーフィルタおよびこれを用いた固体撮像装置 |
US6482669B1 (en) * | 2001-05-30 | 2002-11-19 | Taiwan Semiconductor Manufacturing Company | Colors only process to reduce package yield loss |
JP2004111867A (ja) * | 2002-09-20 | 2004-04-08 | Canon Inc | 固体撮像素子 |
US7474350B2 (en) * | 2003-09-08 | 2009-01-06 | Sanyo Electric Co., Ltd. | Solid state image pickup device comprising lenses for condensing light on photodetection parts |
US7115853B2 (en) * | 2003-09-23 | 2006-10-03 | Micron Technology, Inc. | Micro-lens configuration for small lens focusing in digital imaging devices |
KR100760922B1 (ko) * | 2006-07-31 | 2007-09-21 | 동부일렉트로닉스 주식회사 | 실리콘 산화막을 이용한 씨모스 이미지 센서의마이크로렌즈 및 그 제조방법 |
-
2004
- 2004-10-08 JP JP2004296672A patent/JP4822683B2/ja not_active Expired - Fee Related
-
2005
- 2005-10-06 US US11/243,979 patent/US7683302B2/en active Active
- 2005-10-08 CN CNA2005101086072A patent/CN1763963A/zh active Pending
-
2010
- 2010-02-02 US US12/698,345 patent/US7989752B2/en not_active Expired - Fee Related
-
2011
- 2011-06-08 US US13/155,571 patent/US8134110B2/en not_active Expired - Fee Related
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01270362A (ja) * | 1988-04-22 | 1989-10-27 | Toshiba Corp | 固体撮像装置の製造方法 |
JPH0437165A (ja) * | 1990-06-01 | 1992-02-07 | Nec Corp | 固体撮像素子 |
JPH04257261A (ja) * | 1991-02-12 | 1992-09-11 | Sony Corp | 固体撮像装置 |
JPH0653457A (ja) * | 1992-08-03 | 1994-02-25 | Matsushita Electron Corp | カラー固体撮像装置 |
JPH11154742A (ja) * | 1992-10-06 | 1999-06-08 | Matsushita Electron Corp | 固体撮像装置 |
JPH06132502A (ja) * | 1992-10-15 | 1994-05-13 | Matsushita Electron Corp | 固体撮像装置 |
JPH0818025A (ja) * | 1994-06-30 | 1996-01-19 | Nec Corp | 固体撮像素子 |
JPH0922995A (ja) * | 1995-05-02 | 1997-01-21 | Matsushita Electron Corp | 固体撮像装置及びその製造方法 |
JPH08316448A (ja) * | 1995-05-22 | 1996-11-29 | Matsushita Electron Corp | 固体撮像装置及びその製造方法 |
JPH0945885A (ja) * | 1995-07-26 | 1997-02-14 | Lg Semicon Co Ltd | Ccd固体撮像素子及びその製造方法 |
JPH1114817A (ja) * | 1997-06-20 | 1999-01-22 | Sony Corp | 色フィルタの製造方法 |
JP2001237405A (ja) * | 2000-02-24 | 2001-08-31 | Victor Co Of Japan Ltd | 固体撮像装置および固体撮像装置の製造方法 |
JP2003060176A (ja) * | 2001-08-08 | 2003-02-28 | Toppan Printing Co Ltd | 固体撮像素子 |
JP2004047919A (ja) * | 2002-05-16 | 2004-02-12 | Victor Co Of Japan Ltd | 半導体集積回路の製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008098345A (ja) * | 2006-10-11 | 2008-04-24 | Sony Corp | 固体撮像装置及びその製造方法並びにカメラ |
WO2011077695A1 (en) * | 2009-12-22 | 2011-06-30 | Canon Kabushiki Kaisha | Solid-state image pickup device and method of producing the same |
JP2011134788A (ja) * | 2009-12-22 | 2011-07-07 | Canon Inc | 固体撮像装置及び固体撮像装置の製造方法 |
JP4880794B1 (ja) * | 2011-04-22 | 2012-02-22 | パナソニック株式会社 | 固体撮像装置とその製造方法 |
US8669632B2 (en) | 2011-04-22 | 2014-03-11 | Panasonic Corporation | Solid-state imaging device and method for manufacturing the same |
JP2021097238A (ja) * | 2015-06-05 | 2021-06-24 | ソニーグループ株式会社 | 光検出装置、および測距センサ |
US11557621B2 (en) | 2015-06-05 | 2023-01-17 | Sony Group Corporation | Solid-state imaging sensor |
Also Published As
Publication number | Publication date |
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JP4822683B2 (ja) | 2011-11-24 |
US8134110B2 (en) | 2012-03-13 |
US20060077268A1 (en) | 2006-04-13 |
CN1763963A (zh) | 2006-04-26 |
US20110233704A1 (en) | 2011-09-29 |
US20100134663A1 (en) | 2010-06-03 |
US7989752B2 (en) | 2011-08-02 |
US7683302B2 (en) | 2010-03-23 |
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