JP2006074036A - 半導体発光装置およびその製作方法 - Google Patents

半導体発光装置およびその製作方法 Download PDF

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Publication number
JP2006074036A
JP2006074036A JP2005241441A JP2005241441A JP2006074036A JP 2006074036 A JP2006074036 A JP 2006074036A JP 2005241441 A JP2005241441 A JP 2005241441A JP 2005241441 A JP2005241441 A JP 2005241441A JP 2006074036 A JP2006074036 A JP 2006074036A
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JP
Japan
Prior art keywords
semiconductor light
light emitting
emitting device
phosphor
substrate
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Pending
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JP2005241441A
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English (en)
Japanese (ja)
Inventor
Meikun Sha
明勳 謝
Chia-Fen Tsai
嘉芬 蔡
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Epistar Corp
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Epistar Corp
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Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of JP2006074036A publication Critical patent/JP2006074036A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2005241441A 2004-09-01 2005-08-23 半導体発光装置およびその製作方法 Pending JP2006074036A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093126439A TWI241728B (en) 2004-09-01 2004-09-01 Semiconductor light-emitting device and production method thereof

Publications (1)

Publication Number Publication Date
JP2006074036A true JP2006074036A (ja) 2006-03-16

Family

ID=35745894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005241441A Pending JP2006074036A (ja) 2004-09-01 2005-08-23 半導体発光装置およびその製作方法

Country Status (4)

Country Link
JP (1) JP2006074036A (ko)
KR (1) KR101068649B1 (ko)
DE (1) DE102005040522B4 (ko)
TW (1) TWI241728B (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010054695A (ja) * 2008-08-27 2010-03-11 National Institute Of Advanced Industrial Science & Technology 光デバイスの製造方法
WO2010125792A1 (ja) * 2009-05-01 2010-11-04 昭和電工株式会社 発光ダイオード及びその製造方法、並びに発光ダイオードランプ
JP2012069977A (ja) * 2011-11-08 2012-04-05 Citizen Electronics Co Ltd 発光装置及び発光装置の製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006026481A1 (de) 2006-06-07 2007-12-13 Siemens Ag Verfahren zum Anordnen einer Pulverschicht auf einem Substrat sowie Schichtaufbau mit mindestens einer Pulverschicht auf einem Substrat
KR100757800B1 (ko) * 2006-06-30 2007-09-11 서울옵토디바이스주식회사 절연보호막을 갖는 교류용 발광 다이오드 및 그것을제조하는 방법
DE102006051746A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer Lumineszenzkonversionsschicht
DE102006061175A1 (de) * 2006-12-22 2008-06-26 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren
KR101420214B1 (ko) * 2008-01-21 2014-07-17 엘지이노텍 주식회사 질화물계 발광 소자
WO2010143114A1 (en) * 2009-06-11 2010-12-16 Koninklijke Philips Electronics N.V. Led illumination device
DE102010046966B4 (de) 2010-09-29 2018-05-24 Infineon Technologies Ag Baustein und Verfahren zur Herstellung eines Bausteins
TWI470838B (zh) * 2012-05-25 2015-01-21 Phostek Inc 半導體發光裝置的形成方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173100A (ja) * 1984-09-18 1986-04-15 コニカ株式会社 放射線画像情報読取装置
JPH09260060A (ja) * 1996-03-25 1997-10-03 Uchitsugu Minami エレクトロルミネッセンス素子及びその製造法
JPH1140858A (ja) * 1997-07-17 1999-02-12 Nichia Chem Ind Ltd 発光ダイオード及びその形成方法
JPH1187778A (ja) * 1997-09-02 1999-03-30 Toshiba Corp 半導体発光素子、半導体発光装置およびその製造方法
JP2002016284A (ja) * 2000-06-29 2002-01-18 Toshiba Corp 窒化ガリウム系半導体発光素子の製造方法
JP2002151747A (ja) * 2001-09-03 2002-05-24 Nichia Chem Ind Ltd 発光ダイオード及びその形成方法
WO2003065464A1 (fr) * 2002-01-28 2003-08-07 Nichia Corporation Dispositif a semi-conducteur a base de nitrure comprenant un substrat de support, et son procede de realisation
JP2003243727A (ja) * 2001-12-14 2003-08-29 Nichia Chem Ind Ltd 発光装置
JP2004006986A (ja) * 1993-03-19 2004-01-08 Lumileds Lighting Us Llc 発光ダイオード層と接合されたウェーハとの間の反射性境界面
JP2004031669A (ja) * 2002-06-26 2004-01-29 Seiko Epson Corp 半導体素子部材及び半導体装置並びにそれらの製造方法、電気光学装置、電子機器
JP2004140007A (ja) * 2002-10-15 2004-05-13 Ricoh Co Ltd 面発光レーザ及び面発光レーザアレイ及び光送信モジュール及び光送受信モジュール及び光通信システム及びレーザプリンター及び光ピックアップシステム
JP2004158823A (ja) * 2002-07-15 2004-06-03 Shogen Koden Kofun Yugenkoshi 接着層を有する発光ダイオード及びその製造方法
JP2004207576A (ja) * 2002-12-26 2004-07-22 Toshiba Lighting & Technology Corp 発光ダイオードランプ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340824B1 (en) 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
JP4770058B2 (ja) 2000-05-17 2011-09-07 日亜化学工業株式会社 発光素子及び装置
US6650044B1 (en) * 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
JP5110744B2 (ja) 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 発光装置及びその製造方法
US6642652B2 (en) 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173100A (ja) * 1984-09-18 1986-04-15 コニカ株式会社 放射線画像情報読取装置
JP2004006986A (ja) * 1993-03-19 2004-01-08 Lumileds Lighting Us Llc 発光ダイオード層と接合されたウェーハとの間の反射性境界面
JPH09260060A (ja) * 1996-03-25 1997-10-03 Uchitsugu Minami エレクトロルミネッセンス素子及びその製造法
JPH1140858A (ja) * 1997-07-17 1999-02-12 Nichia Chem Ind Ltd 発光ダイオード及びその形成方法
JPH1187778A (ja) * 1997-09-02 1999-03-30 Toshiba Corp 半導体発光素子、半導体発光装置およびその製造方法
JP2002016284A (ja) * 2000-06-29 2002-01-18 Toshiba Corp 窒化ガリウム系半導体発光素子の製造方法
JP2002151747A (ja) * 2001-09-03 2002-05-24 Nichia Chem Ind Ltd 発光ダイオード及びその形成方法
JP2003243727A (ja) * 2001-12-14 2003-08-29 Nichia Chem Ind Ltd 発光装置
WO2003065464A1 (fr) * 2002-01-28 2003-08-07 Nichia Corporation Dispositif a semi-conducteur a base de nitrure comprenant un substrat de support, et son procede de realisation
JP2004031669A (ja) * 2002-06-26 2004-01-29 Seiko Epson Corp 半導体素子部材及び半導体装置並びにそれらの製造方法、電気光学装置、電子機器
JP2004158823A (ja) * 2002-07-15 2004-06-03 Shogen Koden Kofun Yugenkoshi 接着層を有する発光ダイオード及びその製造方法
JP2004140007A (ja) * 2002-10-15 2004-05-13 Ricoh Co Ltd 面発光レーザ及び面発光レーザアレイ及び光送信モジュール及び光送受信モジュール及び光通信システム及びレーザプリンター及び光ピックアップシステム
JP2004207576A (ja) * 2002-12-26 2004-07-22 Toshiba Lighting & Technology Corp 発光ダイオードランプ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010054695A (ja) * 2008-08-27 2010-03-11 National Institute Of Advanced Industrial Science & Technology 光デバイスの製造方法
WO2010125792A1 (ja) * 2009-05-01 2010-11-04 昭和電工株式会社 発光ダイオード及びその製造方法、並びに発光ダイオードランプ
JP2010263050A (ja) * 2009-05-01 2010-11-18 Showa Denko Kk 発光ダイオード及びその製造方法、並びに発光ダイオードランプ
JP2012069977A (ja) * 2011-11-08 2012-04-05 Citizen Electronics Co Ltd 発光装置及び発光装置の製造方法

Also Published As

Publication number Publication date
KR101068649B1 (ko) 2011-09-28
DE102005040522B4 (de) 2022-03-03
TW200610174A (en) 2006-03-16
DE102005040522A1 (de) 2006-03-02
KR20060048984A (ko) 2006-05-18
TWI241728B (en) 2005-10-11

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