JP2006073779A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2006073779A JP2006073779A JP2004255131A JP2004255131A JP2006073779A JP 2006073779 A JP2006073779 A JP 2006073779A JP 2004255131 A JP2004255131 A JP 2004255131A JP 2004255131 A JP2004255131 A JP 2004255131A JP 2006073779 A JP2006073779 A JP 2006073779A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- alignment mark
- scribe line
- alignment
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/042—Automatically aligning the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Abstract
チッピング防止のために、スクライブラインにレーザを照射し層間絶縁膜の除去を行うと、アライメントマークも除去されてしまう。その結果、後のダイシング時に、ダイシングブレードのアライメントができなくなる。
【解決手段】
一部のアライメントマークにはレーザを照射しないか、強度もしくはパワーを落として照射する。これにより、当該アライメントマークが残存し、ダイシング時のアライメント用に用いることができる。
【選択図】図5
Description
2 半導体チップ
3 スクライブライン
4 アクセサリパターン
41,411,412 アライメントマーク
42 TEG
5 電極パッド
6 層間絶縁膜
7 レーザ照射領域
I 半導体ウエハの中心
P,P’ アライメントマークを残存させる場所
Claims (5)
- スクライブラインと前記スクライブライン上に形成されたアライメントマークとを有する半導体ウエハを用意する工程と、
前記スクライブラインにレーザを照射する工程と、
を有し、
前記レーザを照射する工程において、少なくとも一つのアライメントマークが残存するようにレーザを照射すること、
を特徴とする半導体装置の製造方法。 - 前記レーザを照射する工程において、少なくとも一つの前記アライメントマークにレーザを照射しないことを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記レーザを照射する工程において、少なくとも一つの前記アライメントマークにレーザが照射される際にレーザの強度を低下させることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記レーザを照射する工程において、少なくとも一つの前記アライメントマークにレーザが照射される際にレーザのパワーを低下させることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記レーザ照射を行った後、前記アライメントマークにより位置合わせを行うことによりダイシングを行う工程をさらに含むことを特徴とする請求項1ないし請求項4に記載の半導体装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004255131A JP4741822B2 (ja) | 2004-09-02 | 2004-09-02 | 半導体装置の製造方法 |
KR1020050081357A KR100751550B1 (ko) | 2004-09-02 | 2005-09-01 | 반도체장치의 가공에 있어서 반도체웨이퍼 가공를 위한레이저빔가공장치, 거기에 실시된 레이저빔가공방법 및그것에 의해 가공된 반도체웨이퍼 |
CN200510099670A CN100587914C (zh) | 2004-09-02 | 2005-09-02 | 处理半导体晶片的激光束处理设备、方法及半导体晶片 |
US11/217,436 US7545024B2 (en) | 2004-09-02 | 2005-09-02 | Laser beam processing apparatus for processing semiconductor wafer in production of semiconductor devices, laser beam processing method executed therein, and such semiconductor wafer processed thereby |
TW094130132A TWI280616B (en) | 2004-09-02 | 2005-09-02 | Laser beam processing apparatus for processing semiconductor wafer in production of semiconductor devices, laser beam processing method executed therein, and such semiconductor wafer processed thereby |
US11/968,830 US20080099454A1 (en) | 2004-09-02 | 2008-01-03 | Laser beam processing apparatus for processing semiconductor wafer in production of semiconductor devices, laser beam processing method executed therein, and such semiconductor wafer processed thereby |
US11/968,718 US7829439B2 (en) | 2004-09-02 | 2008-01-03 | Laser beam processing method for making a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004255131A JP4741822B2 (ja) | 2004-09-02 | 2004-09-02 | 半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011082495A Division JP2011155294A (ja) | 2011-04-04 | 2011-04-04 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006073779A true JP2006073779A (ja) | 2006-03-16 |
JP4741822B2 JP4741822B2 (ja) | 2011-08-10 |
Family
ID=35943871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004255131A Expired - Fee Related JP4741822B2 (ja) | 2004-09-02 | 2004-09-02 | 半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7545024B2 (ja) |
JP (1) | JP4741822B2 (ja) |
KR (1) | KR100751550B1 (ja) |
CN (1) | CN100587914C (ja) |
TW (1) | TWI280616B (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008041727A (ja) * | 2006-08-02 | 2008-02-21 | Disco Abrasive Syst Ltd | レーザー加工装置のアライメント方法 |
JP2008193034A (ja) * | 2007-02-08 | 2008-08-21 | Matsushita Electric Ind Co Ltd | 半導体チップの製造方法 |
JP2008226940A (ja) * | 2007-03-09 | 2008-09-25 | Matsushita Electric Ind Co Ltd | 半導体チップの製造方法 |
JP2011155294A (ja) * | 2011-04-04 | 2011-08-11 | Renesas Electronics Corp | 半導体装置の製造方法 |
US9601440B2 (en) | 2013-03-19 | 2017-03-21 | Fuji Electric Co., Ltd. | Method for manufacturing semiconductor device and exposure mask used in the same method |
JP2019200444A (ja) * | 2019-08-30 | 2019-11-21 | キヤノン株式会社 | リソグラフィ装置、パターン形成方法及び物品の製造方法 |
US11243462B2 (en) | 2018-03-30 | 2022-02-08 | Canon Kabushiki Kaisha | Lithography apparatus, method of forming pattern, and method of manufacturing article |
Families Citing this family (15)
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US8604383B2 (en) * | 2004-08-06 | 2013-12-10 | Hamamatsu Photonics K.K. | Laser processing method |
US7465596B2 (en) * | 2005-06-30 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US7510950B2 (en) * | 2005-06-30 | 2009-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2008003577A (ja) * | 2006-05-25 | 2008-01-10 | Canon Inc | 画像表示装置の製造方法および分断方法 |
JP5134216B2 (ja) * | 2006-06-23 | 2013-01-30 | 株式会社ディスコ | ウエーハの加工結果管理方法 |
US20080070378A1 (en) * | 2006-09-19 | 2008-03-20 | Jong-Souk Yeo | Dual laser separation of bonded wafers |
DE102007004953A1 (de) * | 2007-01-26 | 2008-07-31 | Tesa Ag | Heizelement |
JP5309728B2 (ja) * | 2008-06-27 | 2013-10-09 | 富士通セミコンダクター株式会社 | レチクルデータ作成方法及びレチクルデータ作成装置 |
US20120322235A1 (en) * | 2011-06-15 | 2012-12-20 | Wei-Sheng Lei | Wafer dicing using hybrid galvanic laser scribing process with plasma etch |
EP2957378A1 (de) | 2014-06-16 | 2015-12-23 | Synova SA | Bearbeitungskopf zum Einkopplen eines Laserstrahles in einem Flüssigkeitsstrahl mit einer Flüssigkeitschnittstelle |
US9788416B2 (en) * | 2014-12-22 | 2017-10-10 | Intel Corporation | Multilayer substrate for semiconductor packaging |
US11011394B2 (en) * | 2017-11-21 | 2021-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for annealing die and wafer |
CN109732213A (zh) * | 2019-03-19 | 2019-05-10 | 深圳市升达康科技有限公司 | 一种用于与stm设备相连的pcb激光打标机 |
US20220325433A1 (en) * | 2019-06-27 | 2022-10-13 | Khalifa University of Science and Technology | An additive fabrication method of transparent rock micromodels with in-situ mineral coating |
US20220270925A1 (en) * | 2019-07-22 | 2022-08-25 | Massachusetts Institute Of Technology | Flexing semiconductor structures and related techniques |
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JPH01304721A (ja) * | 1988-06-01 | 1989-12-08 | Mitsubishi Electric Corp | 標識を有する半導体基板 |
JPH0777188B2 (ja) * | 1986-04-24 | 1995-08-16 | 株式会社ニコン | 加工装置 |
JPH11233458A (ja) * | 1998-02-18 | 1999-08-27 | Hitachi Ltd | 半導体素子の製造方法およびその製造に用いる半導体ウエハ |
JP2002176140A (ja) * | 2000-12-06 | 2002-06-21 | Seiko Epson Corp | 半導体集積回路ウェハ |
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JP2004106048A (ja) * | 2002-09-20 | 2004-04-08 | Toshiba Corp | 加工方法、及び加工装置 |
JP2004221286A (ja) * | 2003-01-14 | 2004-08-05 | Toshiba Corp | 半導体装置及びその製造方法 |
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2004
- 2004-09-02 JP JP2004255131A patent/JP4741822B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-01 KR KR1020050081357A patent/KR100751550B1/ko not_active IP Right Cessation
- 2005-09-02 US US11/217,436 patent/US7545024B2/en not_active Expired - Fee Related
- 2005-09-02 TW TW094130132A patent/TWI280616B/zh not_active IP Right Cessation
- 2005-09-02 CN CN200510099670A patent/CN100587914C/zh not_active Expired - Fee Related
-
2008
- 2008-01-03 US US11/968,830 patent/US20080099454A1/en not_active Abandoned
- 2008-01-03 US US11/968,718 patent/US7829439B2/en not_active Expired - Fee Related
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JPH01304721A (ja) * | 1988-06-01 | 1989-12-08 | Mitsubishi Electric Corp | 標識を有する半導体基板 |
JPH11233458A (ja) * | 1998-02-18 | 1999-08-27 | Hitachi Ltd | 半導体素子の製造方法およびその製造に用いる半導体ウエハ |
JP2002176140A (ja) * | 2000-12-06 | 2002-06-21 | Seiko Epson Corp | 半導体集積回路ウェハ |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008041727A (ja) * | 2006-08-02 | 2008-02-21 | Disco Abrasive Syst Ltd | レーザー加工装置のアライメント方法 |
JP2008193034A (ja) * | 2007-02-08 | 2008-08-21 | Matsushita Electric Ind Co Ltd | 半導体チップの製造方法 |
JP2008226940A (ja) * | 2007-03-09 | 2008-09-25 | Matsushita Electric Ind Co Ltd | 半導体チップの製造方法 |
JP2011155294A (ja) * | 2011-04-04 | 2011-08-11 | Renesas Electronics Corp | 半導体装置の製造方法 |
US9601440B2 (en) | 2013-03-19 | 2017-03-21 | Fuji Electric Co., Ltd. | Method for manufacturing semiconductor device and exposure mask used in the same method |
US11243462B2 (en) | 2018-03-30 | 2022-02-08 | Canon Kabushiki Kaisha | Lithography apparatus, method of forming pattern, and method of manufacturing article |
JP2019200444A (ja) * | 2019-08-30 | 2019-11-21 | キヤノン株式会社 | リソグラフィ装置、パターン形成方法及び物品の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20060050935A (ko) | 2006-05-19 |
US20060046435A1 (en) | 2006-03-02 |
TWI280616B (en) | 2007-05-01 |
CN1744284A (zh) | 2006-03-08 |
US20080099454A1 (en) | 2008-05-01 |
US7829439B2 (en) | 2010-11-09 |
CN100587914C (zh) | 2010-02-03 |
JP4741822B2 (ja) | 2011-08-10 |
KR100751550B1 (ko) | 2007-08-23 |
US20080113494A1 (en) | 2008-05-15 |
US7545024B2 (en) | 2009-06-09 |
TW200616061A (en) | 2006-05-16 |
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