JP2006041502A5 - - Google Patents

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Publication number
JP2006041502A5
JP2006041502A5 JP2005185380A JP2005185380A JP2006041502A5 JP 2006041502 A5 JP2006041502 A5 JP 2006041502A5 JP 2005185380 A JP2005185380 A JP 2005185380A JP 2005185380 A JP2005185380 A JP 2005185380A JP 2006041502 A5 JP2006041502 A5 JP 2006041502A5
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JP
Japan
Prior art keywords
region
release layer
forming
layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005185380A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006041502A (ja
JP4912627B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005185380A priority Critical patent/JP4912627B2/ja
Priority claimed from JP2005185380A external-priority patent/JP4912627B2/ja
Publication of JP2006041502A publication Critical patent/JP2006041502A/ja
Publication of JP2006041502A5 publication Critical patent/JP2006041502A5/ja
Application granted granted Critical
Publication of JP4912627B2 publication Critical patent/JP4912627B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005185380A 2004-06-24 2005-06-24 薄膜集積回路の作製方法 Expired - Fee Related JP4912627B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005185380A JP4912627B2 (ja) 2004-06-24 2005-06-24 薄膜集積回路の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004186543 2004-06-24
JP2004186543 2004-06-24
JP2005185380A JP4912627B2 (ja) 2004-06-24 2005-06-24 薄膜集積回路の作製方法

Publications (3)

Publication Number Publication Date
JP2006041502A JP2006041502A (ja) 2006-02-09
JP2006041502A5 true JP2006041502A5 (enExample) 2008-05-15
JP4912627B2 JP4912627B2 (ja) 2012-04-11

Family

ID=35906104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005185380A Expired - Fee Related JP4912627B2 (ja) 2004-06-24 2005-06-24 薄膜集積回路の作製方法

Country Status (1)

Country Link
JP (1) JP4912627B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5204959B2 (ja) 2006-06-26 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5264016B2 (ja) * 2006-06-30 2013-08-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2008036837A2 (en) * 2006-09-20 2008-03-27 The Board Of Trustees Of The University Of Illinois Release strategies for making transferable semiconductor structures, devices and device components
KR20200112851A (ko) * 2017-12-22 2020-10-05 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 나노스케일 정렬된 삼차원 적층 집적 회로

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
WO2003010825A1 (fr) * 2001-07-24 2003-02-06 Seiko Epson Corporation Procede de transfert, procede de fabrication d'un element en couche mince, procede de fabrication d'un circuit integre, substrat de circuit et son procede de fabrication, dispositif electro-optique et son procede de fabrication et carte a circuit integre et materiel electronique

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