JP2006019456A5 - - Google Patents

Download PDF

Info

Publication number
JP2006019456A5
JP2006019456A5 JP2004194970A JP2004194970A JP2006019456A5 JP 2006019456 A5 JP2006019456 A5 JP 2006019456A5 JP 2004194970 A JP2004194970 A JP 2004194970A JP 2004194970 A JP2004194970 A JP 2004194970A JP 2006019456 A5 JP2006019456 A5 JP 2006019456A5
Authority
JP
Japan
Prior art keywords
ridge portion
refractive index
layer
current confinement
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004194970A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006019456A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004194970A priority Critical patent/JP2006019456A/ja
Priority claimed from JP2004194970A external-priority patent/JP2006019456A/ja
Publication of JP2006019456A publication Critical patent/JP2006019456A/ja
Publication of JP2006019456A5 publication Critical patent/JP2006019456A5/ja
Pending legal-status Critical Current

Links

JP2004194970A 2004-06-30 2004-06-30 半導体レーザ素子 Pending JP2006019456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004194970A JP2006019456A (ja) 2004-06-30 2004-06-30 半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004194970A JP2006019456A (ja) 2004-06-30 2004-06-30 半導体レーザ素子

Publications (2)

Publication Number Publication Date
JP2006019456A JP2006019456A (ja) 2006-01-19
JP2006019456A5 true JP2006019456A5 (enExample) 2007-07-19

Family

ID=35793442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004194970A Pending JP2006019456A (ja) 2004-06-30 2004-06-30 半導体レーザ素子

Country Status (1)

Country Link
JP (1) JP2006019456A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266574A (ja) * 2006-02-28 2007-10-11 Sanyo Electric Co Ltd 半導体レーザ素子及び半導体レーザ素子の製造方法
JP5247630B2 (ja) * 2009-08-27 2013-07-24 三洋電機株式会社 半導体レーザ素子
JP5853367B2 (ja) * 2010-12-29 2016-02-09 三菱電機株式会社 半導体発光素子の製造方法
CN108512034B (zh) * 2017-02-28 2020-04-03 山东华光光电子股份有限公司 一种横向非对称光波导半导体激光器芯片及其制备方法
CN116231453B (zh) * 2023-05-09 2023-07-18 泉州三安半导体科技有限公司 一种半导体激光元件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS628588A (ja) * 1985-07-04 1987-01-16 Nec Corp 半導体レ−ザ
JP2531719B2 (ja) * 1987-12-22 1996-09-04 キヤノン株式会社 半導体レ―ザ―
JP2000133879A (ja) * 1998-08-19 2000-05-12 Hitachi Ltd 半導体レ―ザ装置及びそれを用いた光情報処理装置
JP2002151790A (ja) * 2000-11-16 2002-05-24 Sony Corp 半導体レーザおよびその製造方法
JP4125937B2 (ja) * 2002-09-24 2008-07-30 松下電器産業株式会社 半導体レーザ装置及びその製造方法

Similar Documents

Publication Publication Date Title
EP1610427A4 (en) TWIN-DIMENSIONAL, SURFACE-EMITTING LASER WITH PHOTONIC CRYSTAL
JP2003036969A5 (enExample)
EP1737047A4 (en) PHOTODIODE AND A METHOD FOR MANUFACTURING THE SAME
EP1841023A3 (en) Temperature tuning of the wavelength of a laser diode by heating
JP2010016406A5 (enExample)
ATE381996T1 (de) Sicherheitselement mit beugungsstrukturen
JP2008516283A5 (enExample)
EP1306944A4 (en) SEMICONDUCTOR LASER ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
JP2011197653A5 (ja) 半導体装置
JP2010537399A5 (enExample)
DE60238195D1 (de) Halbleiterlaserelement
WO2003005513A1 (fr) Laser a emission par la surface, cristallin et photonique, bidimensionnel
WO2009038122A1 (ja) 発光素子
JP2011524065A5 (enExample)
JP2008210665A5 (enExample)
EP3258167A3 (en) Optical constructions incorporating a light guide and low refractive index films
WO2016047045A1 (ja) 有機エレクトロルミネッセンス素子、基材及び発光装置
TW200638645A (en) Semiconductor laser device
JP2007531031A5 (enExample)
JP2006019456A5 (enExample)
JP2004253811A5 (enExample)
JPWO2020121097A5 (ja) 発光デバイス
WO2006014407A3 (en) Total internal reflection fresnel lens and devices
EP1801892A4 (en) METHOD OF MANUFACTURING A SEMICONDUCTOR LIGHT EMISSION ELEMENT AND SEMICONDUCTOR LIGHT EMISSION ELEMENT
TWI378264B (en) Microlens