JP2006019456A - 半導体レーザ素子 - Google Patents

半導体レーザ素子 Download PDF

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Publication number
JP2006019456A
JP2006019456A JP2004194970A JP2004194970A JP2006019456A JP 2006019456 A JP2006019456 A JP 2006019456A JP 2004194970 A JP2004194970 A JP 2004194970A JP 2004194970 A JP2004194970 A JP 2004194970A JP 2006019456 A JP2006019456 A JP 2006019456A
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JP
Japan
Prior art keywords
layer
ridge portion
refractive index
type
ridge
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Pending
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JP2004194970A
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English (en)
Japanese (ja)
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JP2006019456A5 (enExample
Inventor
Masayuki Hata
雅幸 畑
Nobuhiko Hayashi
伸彦 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2004194970A priority Critical patent/JP2006019456A/ja
Publication of JP2006019456A publication Critical patent/JP2006019456A/ja
Publication of JP2006019456A5 publication Critical patent/JP2006019456A5/ja
Pending legal-status Critical Current

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JP2004194970A 2004-06-30 2004-06-30 半導体レーザ素子 Pending JP2006019456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004194970A JP2006019456A (ja) 2004-06-30 2004-06-30 半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004194970A JP2006019456A (ja) 2004-06-30 2004-06-30 半導体レーザ素子

Publications (2)

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JP2006019456A true JP2006019456A (ja) 2006-01-19
JP2006019456A5 JP2006019456A5 (enExample) 2007-07-19

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ID=35793442

Family Applications (1)

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JP2004194970A Pending JP2006019456A (ja) 2004-06-30 2004-06-30 半導体レーザ素子

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JP (1) JP2006019456A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266574A (ja) * 2006-02-28 2007-10-11 Sanyo Electric Co Ltd 半導体レーザ素子及び半導体レーザ素子の製造方法
JP2011049364A (ja) * 2009-08-27 2011-03-10 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2012142448A (ja) * 2010-12-29 2012-07-26 Mitsubishi Electric Corp 半導体発光素子の製造方法
CN108512034A (zh) * 2017-02-28 2018-09-07 山东华光光电子股份有限公司 一种横向非对称光波导半导体激光器芯片及其制备方法
WO2024230822A1 (zh) * 2023-05-09 2024-11-14 泉州三安半导体科技有限公司 一种半导体激光元件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS628588A (ja) * 1985-07-04 1987-01-16 Nec Corp 半導体レ−ザ
JPH01165189A (ja) * 1987-12-22 1989-06-29 Canon Inc 半導体レーザー
JP2000133879A (ja) * 1998-08-19 2000-05-12 Hitachi Ltd 半導体レ―ザ装置及びそれを用いた光情報処理装置
JP2002151790A (ja) * 2000-11-16 2002-05-24 Sony Corp 半導体レーザおよびその製造方法
JP2004119512A (ja) * 2002-09-24 2004-04-15 Matsushita Electric Ind Co Ltd 半導体レーザ装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS628588A (ja) * 1985-07-04 1987-01-16 Nec Corp 半導体レ−ザ
JPH01165189A (ja) * 1987-12-22 1989-06-29 Canon Inc 半導体レーザー
JP2000133879A (ja) * 1998-08-19 2000-05-12 Hitachi Ltd 半導体レ―ザ装置及びそれを用いた光情報処理装置
JP2002151790A (ja) * 2000-11-16 2002-05-24 Sony Corp 半導体レーザおよびその製造方法
JP2004119512A (ja) * 2002-09-24 2004-04-15 Matsushita Electric Ind Co Ltd 半導体レーザ装置及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266574A (ja) * 2006-02-28 2007-10-11 Sanyo Electric Co Ltd 半導体レーザ素子及び半導体レーザ素子の製造方法
JP2011049364A (ja) * 2009-08-27 2011-03-10 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2012142448A (ja) * 2010-12-29 2012-07-26 Mitsubishi Electric Corp 半導体発光素子の製造方法
CN108512034A (zh) * 2017-02-28 2018-09-07 山东华光光电子股份有限公司 一种横向非对称光波导半导体激光器芯片及其制备方法
CN108512034B (zh) * 2017-02-28 2020-04-03 山东华光光电子股份有限公司 一种横向非对称光波导半导体激光器芯片及其制备方法
WO2024230822A1 (zh) * 2023-05-09 2024-11-14 泉州三安半导体科技有限公司 一种半导体激光元件

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