JP2005536896A - 電磁放射線を発する半導体チップの製造法及び電磁放射線を発する半導体チップ - Google Patents
電磁放射線を発する半導体チップの製造法及び電磁放射線を発する半導体チップ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 230000005670 electromagnetic radiation Effects 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims abstract description 10
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- ZGNPLWZYVAFUNZ-UHFFFAOYSA-N tert-butylphosphane Chemical compound CC(C)(C)P ZGNPLWZYVAFUNZ-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 13
- 229910005540 GaP Inorganic materials 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Abstract
本発明によれば、以下の処理工程:基板を準備する工程;基板上に、光子を発する活性層を含有する半導体層構造体を施与する工程;及びGax(InyAl1−y)1−xP(0.8≦x及び0≦y≦1)を含む透明な減結合層を施与する工程を含む、AlGaInP−ベースの放射線を発する半導体チップの製造法において、基板がゲルマニウムから形成されており、かつ透明な減結合層を低温で施与することが予定されている。
Description
−前記基板は、材料系AlGaInP及びAlGaAsが単結晶質で堆積するのを可能にする格子定数を有していなければならないという条件
−前記基板は、使用されるプロセス温度でなお十分に堅固でなければならないという条件、及び
−前記基板は、十分に良好な品質で市販されていなければならないという条件。
Claims (11)
- 以下の処理工程:
−基板(12)を準備する工程;
−基板上に、光子を発する活性層(22)を含有する半導体層構造体を施与する工程;及び
−透明な減結合層(16)を施与する工程
を含む、AlGaInP−ベースの放射線を発する半導体チップの製造法において、
−基板(12)が本質的にゲルマニウムから形成されており、かつ
−透明な減結合層(16)を最高800℃までの温度領域内で施与すること
を特徴とする、AlGaInP−ベースの放射線を発する半導体チップの製造法。 - 透明な減結合層(16)を、リン源としてのt−ブチルホスフィンの使用下に施与する、請求項1記載の方法。
- 透明な減結合層(16)を、780℃を下回る、有利に750℃を下回る温度で施与する、請求項1又は2記載の方法。
- 透明な減結合層(16)を約700℃の温度で施与する、請求項1から3までのいずれか1項記載の方法。
- 透明な減結合層(16)を、ガリウム源としてのトリメチルガリウムの使用下に施与する、請求項1から4までのいずれか1項記載の方法。
- 透明な減結合層(16)を、有機金属気相エピタクシー(OMVPE)を用いて施与する、請求項1から5までのいずれか1項記載の方法。
- 減結合層がGax(InyAl1−y)1−xP(0.8≦x及び0≦y≦1)、殊にGaPを含む、請求項2から6までのいずれか1項記載の方法。
- 透明な減結合層(16)を5〜20、有利に約10のV/III−比で成長させる、請求項6又は7記載の方法。
- 以下:
−基板(12);
−基板上に施与された、光子を発する活性層(22)を含有する半導体層構造体(14);
及び
−半導体層構造体(14)上に配置された透明な減結合層(16)
を含有する、AlGaInP−ベースの放射線を発する半導体チップにおいて、
−基板(12)がゲルマニウムから形成されていること
を特徴とする、AlGaInP−ベースの放射線を発する半導体チップ。 - 透明な減結合層(16)がGax(InyAl1−y)1−xP(0.8≦x及び0≦y≦1)、殊にGaPを含んでいる、請求項9記載の放射線を発する半導体チップ。
- 透明な減結合層(16)が、約1μm〜約10μm、殊に約2μm〜約10μmの厚さを有する、請求項9又は10記載の放射線を発する半導体チップ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10239045A DE10239045A1 (de) | 2002-08-26 | 2002-08-26 | Verfahren zum Herstellen eines elektromagnetische Strahlung emittierenden Halbleiterchips und elektromagnetische Strahlung emittierender Halbleiterchip |
PCT/DE2003/002786 WO2004021457A2 (de) | 2002-08-26 | 2003-08-21 | Verfahren zum herstellen eines elektromagnetische strahlung emittierenden halbleiterchips und elektromagnetische strahlung emittierender halbleiterchip |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005536896A true JP2005536896A (ja) | 2005-12-02 |
Family
ID=31501947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004531691A Pending JP2005536896A (ja) | 2002-08-26 | 2003-08-21 | 電磁放射線を発する半導体チップの製造法及び電磁放射線を発する半導体チップ |
Country Status (7)
Country | Link |
---|---|
US (1) | US7195991B2 (ja) |
EP (1) | EP1532694A2 (ja) |
JP (1) | JP2005536896A (ja) |
CN (1) | CN100420042C (ja) |
DE (1) | DE10239045A1 (ja) |
TW (1) | TWI224399B (ja) |
WO (1) | WO2004021457A2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI460881B (zh) | 2006-12-11 | 2014-11-11 | Univ California | 透明發光二極體 |
JP5346443B2 (ja) * | 2007-04-16 | 2013-11-20 | ローム株式会社 | 半導体発光素子およびその製造方法 |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5129636B1 (ja) * | 1970-12-25 | 1976-08-26 | ||
DE2752107A1 (de) * | 1976-11-22 | 1978-06-01 | Mitsubishi Monsanto Chem | Elektrolumineszenzelement und verfahren zu seiner herstellung |
US5003548A (en) * | 1988-09-21 | 1991-03-26 | Cornell Research Foundation, Inc. | High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laser |
US5233204A (en) * | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
JP3809464B2 (ja) * | 1999-12-14 | 2006-08-16 | 独立行政法人理化学研究所 | 半導体層の形成方法 |
WO2002009242A2 (en) * | 2000-07-21 | 2002-01-31 | Motorola, Inc. | Optical structure on compliant substrate |
TW515106B (en) * | 2000-09-13 | 2002-12-21 | Toshiba Corp | Bipolar transistor, semiconductor light emitting device and semiconductor device |
-
2002
- 2002-08-26 DE DE10239045A patent/DE10239045A1/de not_active Withdrawn
-
2003
- 2003-08-21 US US10/524,186 patent/US7195991B2/en not_active Expired - Lifetime
- 2003-08-21 WO PCT/DE2003/002786 patent/WO2004021457A2/de active Application Filing
- 2003-08-21 TW TW092122994A patent/TWI224399B/zh not_active IP Right Cessation
- 2003-08-21 EP EP03750286A patent/EP1532694A2/de not_active Withdrawn
- 2003-08-21 CN CNB038202603A patent/CN100420042C/zh not_active Expired - Fee Related
- 2003-08-21 JP JP2004531691A patent/JP2005536896A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1532694A2 (de) | 2005-05-25 |
US20060003467A1 (en) | 2006-01-05 |
TW200405584A (en) | 2004-04-01 |
CN1679176A (zh) | 2005-10-05 |
DE10239045A1 (de) | 2004-03-11 |
CN100420042C (zh) | 2008-09-17 |
WO2004021457A2 (de) | 2004-03-11 |
US7195991B2 (en) | 2007-03-27 |
TWI224399B (en) | 2004-11-21 |
WO2004021457A3 (de) | 2004-12-23 |
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