WO2004021457A3 - Verfahren zum herstellen eines elektromagnetische strahlung emittierenden halbleiterchips und elektromagnetische strahlung emittierender halbleiterchip - Google Patents

Verfahren zum herstellen eines elektromagnetische strahlung emittierenden halbleiterchips und elektromagnetische strahlung emittierender halbleiterchip Download PDF

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Publication number
WO2004021457A3
WO2004021457A3 PCT/DE2003/002786 DE0302786W WO2004021457A3 WO 2004021457 A3 WO2004021457 A3 WO 2004021457A3 DE 0302786 W DE0302786 W DE 0302786W WO 2004021457 A3 WO2004021457 A3 WO 2004021457A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor chip
emitting semiconductor
electromagnetic radiation
producing
substrate
Prior art date
Application number
PCT/DE2003/002786
Other languages
English (en)
French (fr)
Other versions
WO2004021457A2 (de
Inventor
Christian Karnutsch
Peter Stauss
Klaus Streubel
Original Assignee
Osram Opto Semiconductors Gmbh
Christian Karnutsch
Peter Stauss
Klaus Streubel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Christian Karnutsch, Peter Stauss, Klaus Streubel filed Critical Osram Opto Semiconductors Gmbh
Priority to EP03750286A priority Critical patent/EP1532694A2/de
Priority to JP2004531691A priority patent/JP2005536896A/ja
Priority to US10/524,186 priority patent/US7195991B2/en
Publication of WO2004021457A2 publication Critical patent/WO2004021457A2/de
Publication of WO2004021457A3 publication Critical patent/WO2004021457A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound

Abstract

Bei einem Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips auf AlGaInP-Basis mit den Verfahrensschritten: Bereitstellen eines Substrats; Aufbringen einer Halbleiterschichtfolge auf das Substrat, welche eine Photonen emittierende aktive Schicht enthält; und Aufbringen einer transparenten Auskoppelschicht, die Gax(InyAl1-y)1-xP mit 0,8 ≤ x und 0 ≤ y ≤ 1 umfaßt, ist erfindungsgemäß vorgesehen, daß das Substrat aus Germanium gebildet ist und daß die transparente Auskoppelschicht bei niedriger Temperatur aufgebracht wird.
PCT/DE2003/002786 2002-08-26 2003-08-21 Verfahren zum herstellen eines elektromagnetische strahlung emittierenden halbleiterchips und elektromagnetische strahlung emittierender halbleiterchip WO2004021457A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03750286A EP1532694A2 (de) 2002-08-26 2003-08-21 Verfahren zum herstellen eines elektromagnetische strahlung emittierenden halbleiterchips und elektromagnetische strahlung emittierender halbleiterchip
JP2004531691A JP2005536896A (ja) 2002-08-26 2003-08-21 電磁放射線を発する半導体チップの製造法及び電磁放射線を発する半導体チップ
US10/524,186 US7195991B2 (en) 2002-08-26 2003-08-21 Method for producing an electromagnetic radiation-emitting semiconductor chip and a corresponding electromagnetic radiation-emitting semiconductor chip

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10239045.2 2002-08-26
DE10239045A DE10239045A1 (de) 2002-08-26 2002-08-26 Verfahren zum Herstellen eines elektromagnetische Strahlung emittierenden Halbleiterchips und elektromagnetische Strahlung emittierender Halbleiterchip

Publications (2)

Publication Number Publication Date
WO2004021457A2 WO2004021457A2 (de) 2004-03-11
WO2004021457A3 true WO2004021457A3 (de) 2004-12-23

Family

ID=31501947

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/002786 WO2004021457A2 (de) 2002-08-26 2003-08-21 Verfahren zum herstellen eines elektromagnetische strahlung emittierenden halbleiterchips und elektromagnetische strahlung emittierender halbleiterchip

Country Status (7)

Country Link
US (1) US7195991B2 (de)
EP (1) EP1532694A2 (de)
JP (1) JP2005536896A (de)
CN (1) CN100420042C (de)
DE (1) DE10239045A1 (de)
TW (1) TWI224399B (de)
WO (1) WO2004021457A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010512662A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 透明発光ダイオード
JP5346443B2 (ja) * 2007-04-16 2013-11-20 ローム株式会社 半導体発光素子およびその製造方法
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3745423A (en) * 1970-12-25 1973-07-10 Hitachi Ltd Optical semiconductor device and method of manufacturing the same
US4218270A (en) * 1976-11-22 1980-08-19 Mitsubishi Monsanto Chemical Company Method of fabricating electroluminescent element utilizing multi-stage epitaxial deposition and substrate removal techniques
WO2002009242A2 (en) * 2000-07-21 2002-01-31 Motorola, Inc. Optical structure on compliant substrate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003548A (en) * 1988-09-21 1991-03-26 Cornell Research Foundation, Inc. High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laser
US5233204A (en) 1992-01-10 1993-08-03 Hewlett-Packard Company Light-emitting diode with a thick transparent layer
JP3809464B2 (ja) * 1999-12-14 2006-08-16 独立行政法人理化学研究所 半導体層の形成方法
TW515106B (en) * 2000-09-13 2002-12-21 Toshiba Corp Bipolar transistor, semiconductor light emitting device and semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3745423A (en) * 1970-12-25 1973-07-10 Hitachi Ltd Optical semiconductor device and method of manufacturing the same
US4218270A (en) * 1976-11-22 1980-08-19 Mitsubishi Monsanto Chemical Company Method of fabricating electroluminescent element utilizing multi-stage epitaxial deposition and substrate removal techniques
WO2002009242A2 (en) * 2000-07-21 2002-01-31 Motorola, Inc. Optical structure on compliant substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MODAK P ET AL: "InAlGaP MCLEDs on Ge", JOURNAL OF CRYSTAL GROWTH, vol. 221, 2000, pages 668 - 673, XP004226940, ISSN: 0022-0248 *

Also Published As

Publication number Publication date
US7195991B2 (en) 2007-03-27
CN1679176A (zh) 2005-10-05
DE10239045A1 (de) 2004-03-11
EP1532694A2 (de) 2005-05-25
TW200405584A (en) 2004-04-01
US20060003467A1 (en) 2006-01-05
TWI224399B (en) 2004-11-21
JP2005536896A (ja) 2005-12-02
WO2004021457A2 (de) 2004-03-11
CN100420042C (zh) 2008-09-17

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