JP2005536056A5 - - Google Patents
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- Publication number
- JP2005536056A5 JP2005536056A5 JP2004529203A JP2004529203A JP2005536056A5 JP 2005536056 A5 JP2005536056 A5 JP 2005536056A5 JP 2004529203 A JP2004529203 A JP 2004529203A JP 2004529203 A JP2004529203 A JP 2004529203A JP 2005536056 A5 JP2005536056 A5 JP 2005536056A5
- Authority
- JP
- Japan
- Prior art keywords
- defining
- semiconductor device
- conductive material
- conductive
- pedestal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 125000006850 spacer group Chemical group 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/219,190 | 2002-08-16 | ||
| US10/219,190 US7045845B2 (en) | 2002-08-16 | 2002-08-16 | Self-aligned vertical gate semiconductor device |
| PCT/US2003/023558 WO2004017419A1 (en) | 2002-08-16 | 2003-07-28 | Vertical gate semiconductor device with a self-aligned structure |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005536056A JP2005536056A (ja) | 2005-11-24 |
| JP2005536056A5 true JP2005536056A5 (enExample) | 2006-07-06 |
| JP5036130B2 JP5036130B2 (ja) | 2012-09-26 |
Family
ID=31714695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004529203A Expired - Fee Related JP5036130B2 (ja) | 2002-08-16 | 2003-07-28 | 自己整合した垂直ゲート半導体装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7045845B2 (enExample) |
| EP (1) | EP1535344B1 (enExample) |
| JP (1) | JP5036130B2 (enExample) |
| KR (1) | KR101026953B1 (enExample) |
| CN (1) | CN100438071C (enExample) |
| AU (1) | AU2003254226A1 (enExample) |
| WO (1) | WO2004017419A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005116304A2 (en) * | 2004-04-23 | 2005-12-08 | Asm America, Inc. | In situ doped epitaxial films |
| JP4929579B2 (ja) * | 2004-10-26 | 2012-05-09 | 日産自動車株式会社 | 半導体装置の製造方法 |
| ITMI20042243A1 (it) * | 2004-11-19 | 2005-02-19 | St Microelectronics Srl | Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazione |
| US7875936B2 (en) * | 2004-11-19 | 2011-01-25 | Stmicroelectronics, S.R.L. | Power MOS electronic device and corresponding realizing method |
| US7397084B2 (en) * | 2005-04-01 | 2008-07-08 | Semiconductor Components Industries, L.L.C. | Semiconductor device having enhanced performance and method |
| US7276747B2 (en) * | 2005-04-25 | 2007-10-02 | Semiconductor Components Industries, L.L.C. | Semiconductor device having screening electrode and method |
| US7446354B2 (en) * | 2005-04-25 | 2008-11-04 | Semiconductor Components Industries, L.L.C. | Power semiconductor device having improved performance and method |
| US7300850B2 (en) * | 2005-09-30 | 2007-11-27 | Semiconductor Components Industries, L.L.C. | Method of forming a self-aligned transistor |
| KR20080089403A (ko) * | 2005-12-22 | 2008-10-06 | 에이에스엠 아메리카, 인코포레이티드 | 도핑된 반도체 물질들의 에피택시 증착 |
| US20110084332A1 (en) * | 2009-10-08 | 2011-04-14 | Vishay General Semiconductor, Llc. | Trench termination structure |
| JP2012253291A (ja) * | 2011-06-07 | 2012-12-20 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法 |
| US20130154017A1 (en) * | 2011-12-14 | 2013-06-20 | Microchip Technology Incorporated | Self-Aligned Gate Structure for Field Effect Transistor |
| US10217644B2 (en) * | 2012-07-24 | 2019-02-26 | Infineon Technologies Ag | Production of adhesion structures in dielectric layers using photoprocess technology and devices incorporating adhesion structures |
| US9818831B2 (en) * | 2013-03-11 | 2017-11-14 | Semiconductor Components Industreis, Llc | DMOS transistor including a gate dielectric having a non-uniform thickness |
| CN109616447A (zh) * | 2018-12-13 | 2019-04-12 | 武汉新芯集成电路制造有限公司 | 一种半导体器件及其制造方法 |
| US11569378B2 (en) | 2020-12-22 | 2023-01-31 | Texas Instruments Incorporated | Semiconductor on insulator on wide band-gap semiconductor |
| US11557673B2 (en) | 2020-12-29 | 2023-01-17 | Texas Instruments Incorporated | Hybrid semiconductor device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04256367A (ja) * | 1991-02-08 | 1992-09-11 | Hitachi Ltd | 半導体素子 |
| JP3173094B2 (ja) * | 1992-01-23 | 2001-06-04 | ソニー株式会社 | Ｍｏｓトランジスタの製造方法 |
| JPH065864A (ja) * | 1992-06-23 | 1994-01-14 | Shindengen Electric Mfg Co Ltd | 絶縁ゲ−ト型電界効果トランジスタおよび製造方法 |
| JP3113426B2 (ja) | 1992-11-27 | 2000-11-27 | 三洋電機株式会社 | 絶縁ゲート半導体装置及びその製造方法 |
| JP3166148B2 (ja) | 1995-07-11 | 2001-05-14 | 横河電機株式会社 | 半導体装置 |
| US6110783A (en) | 1997-06-27 | 2000-08-29 | Sun Microsystems, Inc. | Method for forming a notched gate oxide asymmetric MOS device |
| DE19731496A1 (de) * | 1997-07-22 | 1999-01-28 | Siemens Ag | Herstellungsverfahren für ein durch Feldeffekt gesteuertes Halbleiterbauelement |
| US6593617B1 (en) * | 1998-02-19 | 2003-07-15 | International Business Machines Corporation | Field effect transistors with vertical gate side walls and method for making such transistors |
| US6197640B1 (en) * | 1998-12-21 | 2001-03-06 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
| US6051456A (en) | 1998-12-21 | 2000-04-18 | Motorola, Inc. | Semiconductor component and method of manufacture |
| FR2788629B1 (fr) * | 1999-01-15 | 2003-06-20 | Commissariat Energie Atomique | Transistor mis et procede de fabrication d'un tel transistor sur un substrat semiconducteur |
| KR20000051294A (ko) | 1999-01-20 | 2000-08-16 | 김덕중 | 전기적 특성이 향상된 디모스 전계 효과 트랜지스터 및 그 제조 방법 |
-
2002
- 2002-08-16 US US10/219,190 patent/US7045845B2/en not_active Expired - Lifetime
-
2003
- 2003-07-28 KR KR1020057002625A patent/KR101026953B1/ko not_active Expired - Fee Related
- 2003-07-28 CN CNB038193604A patent/CN100438071C/zh not_active Expired - Fee Related
- 2003-07-28 EP EP03788285A patent/EP1535344B1/en not_active Expired - Lifetime
- 2003-07-28 WO PCT/US2003/023558 patent/WO2004017419A1/en not_active Ceased
- 2003-07-28 AU AU2003254226A patent/AU2003254226A1/en not_active Abandoned
- 2003-07-28 JP JP2004529203A patent/JP5036130B2/ja not_active Expired - Fee Related
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