JP2005512229A - 混成の積み重ねられた集積回路ダイ要素を含む再構成可能なプロセッサモジュール - Google Patents
混成の積み重ねられた集積回路ダイ要素を含む再構成可能なプロセッサモジュール Download PDFInfo
- Publication number
- JP2005512229A JP2005512229A JP2003551682A JP2003551682A JP2005512229A JP 2005512229 A JP2005512229 A JP 2005512229A JP 2003551682 A JP2003551682 A JP 2003551682A JP 2003551682 A JP2003551682 A JP 2003551682A JP 2005512229 A JP2005512229 A JP 2005512229A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- circuit die
- die element
- array
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F15/00—Digital computers in general; Data processing equipment in general
- G06F15/76—Architectures of general purpose stored program computers
- G06F15/78—Architectures of general purpose stored program computers comprising a single central processing unit
- G06F15/7867—Architectures of general purpose stored program computers comprising a single central processing unit with reconfigurable architecture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F15/00—Digital computers in general; Data processing equipment in general
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/922—Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Microcomputers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/012,057 US6627985B2 (en) | 2001-12-05 | 2001-12-05 | Reconfigurable processor module comprising hybrid stacked integrated circuit die elements |
| PCT/US2002/035972 WO2003050694A1 (en) | 2001-12-05 | 2002-11-08 | Reconfigurable processor module comprising hybrid stacked integrated circuit die elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005512229A true JP2005512229A (ja) | 2005-04-28 |
| JP2005512229A5 JP2005512229A5 (enExample) | 2008-10-02 |
Family
ID=21753168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003551682A Pending JP2005512229A (ja) | 2001-12-05 | 2002-11-08 | 混成の積み重ねられた集積回路ダイ要素を含む再構成可能なプロセッサモジュール |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US6627985B2 (enExample) |
| EP (1) | EP1461715A4 (enExample) |
| JP (1) | JP2005512229A (enExample) |
| KR (1) | KR20040072645A (enExample) |
| AU (1) | AU2002352582A1 (enExample) |
| CA (1) | CA2467821C (enExample) |
| WO (1) | WO2003050694A1 (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014112082A1 (ja) * | 2013-01-17 | 2014-07-24 | 富士通株式会社 | プログラマブルロジック装置 |
| JP2022531983A (ja) * | 2019-05-21 | 2022-07-12 | アーバー・カンパニー・エルエルエルピイ | 積層集積回路ダイ素子と電池を集積するためのシステムおよび方法 |
| JP2022554255A (ja) * | 2019-10-28 | 2022-12-28 | ザイリンクス インコーポレイテッド | 適応システムの構成、セキュリティ、及び管理のためのサブシステム |
| JP2023531294A (ja) * | 2020-06-29 | 2023-07-21 | アーバー・カンパニー・エルエルエルピイ | プロセッサ非依存5Gモデムを有する3Dダイ・スタッキングの再構成可能プロセッサ・モジュールを使用するモバイルIoTエッジ・デバイス |
| US11797067B2 (en) | 2019-04-23 | 2023-10-24 | Arbor Company, Lllp | Systems and methods for reconfiguring dual-function cell arrays |
| JP2023178501A (ja) * | 2011-01-14 | 2023-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Families Citing this family (292)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9092595B2 (en) * | 1997-10-08 | 2015-07-28 | Pact Xpp Technologies Ag | Multiprocessor having associated RAM units |
| US6856007B2 (en) | 2001-08-28 | 2005-02-15 | Tessera, Inc. | High-frequency chip packages |
| US7030488B2 (en) * | 2001-10-30 | 2006-04-18 | Intel Corporation | Packaged combination memory for electronic devices |
| US6627985B2 (en) * | 2001-12-05 | 2003-09-30 | Arbor Company Llp | Reconfigurable processor module comprising hybrid stacked integrated circuit die elements |
| US7126214B2 (en) * | 2001-12-05 | 2006-10-24 | Arbor Company Llp | Reconfigurable processor module comprising hybrid stacked integrated circuit die elements |
| US7082591B2 (en) * | 2002-01-17 | 2006-07-25 | Irvine Sensors Corporation | Method for effectively embedding various integrated circuits within field programmable gate arrays |
| US7649386B2 (en) * | 2002-01-17 | 2010-01-19 | Ozguz Volkan H | Field programmable gate array utilizing dedicated memory stacks in a vertical layer format |
| US7673273B2 (en) * | 2002-07-08 | 2010-03-02 | Tier Logic, Inc. | MPGA products based on a prototype FPGA |
| US6992503B2 (en) * | 2002-07-08 | 2006-01-31 | Viciciv Technology | Programmable devices with convertibility to customizable devices |
| US7064018B2 (en) * | 2002-07-08 | 2006-06-20 | Viciciv Technology | Methods for fabricating three dimensional integrated circuits |
| US7064579B2 (en) * | 2002-07-08 | 2006-06-20 | Viciciv Technology | Alterable application specific integrated circuit (ASIC) |
| US20040004251A1 (en) * | 2002-07-08 | 2004-01-08 | Madurawe Raminda U. | Insulated-gate field-effect thin film transistors |
| US7112994B2 (en) | 2002-07-08 | 2006-09-26 | Viciciv Technology | Three dimensional integrated circuits |
| US7312109B2 (en) * | 2002-07-08 | 2007-12-25 | Viciciv, Inc. | Methods for fabricating fuse programmable three dimensional integrated circuits |
| US6747478B2 (en) * | 2002-07-08 | 2004-06-08 | Viciciv | Field programmable gate array with convertibility to application specific integrated circuit |
| US7129744B2 (en) * | 2003-10-23 | 2006-10-31 | Viciciv Technology | Programmable interconnect structures |
| US7062744B2 (en) * | 2002-09-04 | 2006-06-13 | Osann Jr Robert | Emulation solution for programmable instruction DSP |
| US8643162B2 (en) * | 2007-11-19 | 2014-02-04 | Raminda Udaya Madurawe | Pads and pin-outs in three dimensional integrated circuits |
| US7812458B2 (en) * | 2007-11-19 | 2010-10-12 | Tier Logic, Inc. | Pad invariant FPGA and ASIC devices |
| US20040125093A1 (en) * | 2002-12-30 | 2004-07-01 | Serge Rutman | Micro-controller with integrated light modulator |
| US6917219B2 (en) * | 2003-03-12 | 2005-07-12 | Xilinx, Inc. | Multi-chip programmable logic device having configurable logic circuitry and configuration data storage on different dice |
| JP4419049B2 (ja) * | 2003-04-21 | 2010-02-24 | エルピーダメモリ株式会社 | メモリモジュール及びメモリシステム |
| US6972480B2 (en) | 2003-06-16 | 2005-12-06 | Shellcase Ltd. | Methods and apparatus for packaging integrated circuit devices |
| CN100587962C (zh) | 2003-07-03 | 2010-02-03 | 泰塞拉技术匈牙利公司 | 用于封装集成电路器件的方法和设备 |
| WO2005031863A1 (en) * | 2003-09-26 | 2005-04-07 | Tessera, Inc. | Structure and method of making capped chips having vertical interconnects |
| US20050116344A1 (en) * | 2003-10-29 | 2005-06-02 | Tessera, Inc. | Microelectronic element having trace formed after bond layer |
| US7030651B2 (en) * | 2003-12-04 | 2006-04-18 | Viciciv Technology | Programmable structured arrays |
| US7176713B2 (en) * | 2004-01-05 | 2007-02-13 | Viciciv Technology | Integrated circuits with RAM and ROM fabrication options |
| DE102004001669B4 (de) * | 2004-01-12 | 2008-06-05 | Infineon Technologies Ag | Konfigurierbares Logikbauelement ohne lokalen Konfigurationsspeicher mit parallelem Konfigurationsbus |
| JP4045506B2 (ja) * | 2004-01-21 | 2008-02-13 | セイコーエプソン株式会社 | 積層型半導体記憶装置 |
| KR100564611B1 (ko) * | 2004-02-14 | 2006-03-29 | 삼성전자주식회사 | 하드 디스크 드라이브의 완충 구조체 |
| US6991947B1 (en) | 2004-03-22 | 2006-01-31 | Tushar Gheewala | Hybrid semiconductor circuit with programmable intraconnectivity |
| US7038324B2 (en) * | 2004-03-31 | 2006-05-02 | Intel Corporation | Wafer stacking using interconnect structures of substantially uniform height |
| CA2560219A1 (en) * | 2004-05-13 | 2005-11-24 | Basf Aktiengesellschaft | Triazolopyrimidine derivative-based fungicide mixtures |
| US7489164B2 (en) * | 2004-05-17 | 2009-02-10 | Raminda Udaya Madurawe | Multi-port memory devices |
| US7556775B2 (en) * | 2004-05-25 | 2009-07-07 | The United States Of America As Represented By The Secretary Of The Navy | Microelectro-mechanical chemical sensor |
| US7299339B2 (en) * | 2004-08-30 | 2007-11-20 | The Boeing Company | Super-reconfigurable fabric architecture (SURFA): a multi-FPGA parallel processing architecture for COTS hybrid computing framework |
| US7459772B2 (en) * | 2004-09-29 | 2008-12-02 | Actel Corporation | Face-to-face bonded I/O circuit die and functional logic circuit die system |
| US7301242B2 (en) * | 2004-11-04 | 2007-11-27 | Tabula, Inc. | Programmable system in package |
| US7750669B2 (en) * | 2005-01-06 | 2010-07-06 | Justin Martin Spangaro | Reprogrammable integrated circuit |
| US8201124B1 (en) | 2005-03-15 | 2012-06-12 | Tabula, Inc. | System in package and method of creating system in package |
| US8143095B2 (en) | 2005-03-22 | 2012-03-27 | Tessera, Inc. | Sequential fabrication of vertical conductive interconnects in capped chips |
| US20060225020A1 (en) * | 2005-04-01 | 2006-10-05 | Anantha Chandrakasan | Methods and apparatus for 3-D FPGA design |
| US7382154B2 (en) * | 2005-10-03 | 2008-06-03 | Honeywell International Inc. | Reconfigurable network on a chip |
| US7327159B1 (en) * | 2005-11-28 | 2008-02-05 | Lattice Semiconductor Corporation | Interface block architectures |
| US8093717B2 (en) | 2005-12-09 | 2012-01-10 | Intel Corporation | Microstrip spacer for stacked chip scale packages, methods of making same, methods of operating same, and systems containing same |
| US20070138644A1 (en) * | 2005-12-15 | 2007-06-21 | Tessera, Inc. | Structure and method of making capped chip having discrete article assembled into vertical interconnect |
| US7936062B2 (en) | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
| US7486111B2 (en) * | 2006-03-08 | 2009-02-03 | Tier Logic, Inc. | Programmable logic devices comprising time multiplexed programmable interconnect |
| US7714450B2 (en) | 2006-03-27 | 2010-05-11 | Marvell International Technology Ltd. | On-die bond wires system and method for enhancing routability of a redistribution layer |
| KR100883655B1 (ko) * | 2006-12-04 | 2009-02-18 | 삼성전자주식회사 | 재구성 가능한 프로세서를 갖는 문맥 교환 시스템 및 방법 |
| US8604605B2 (en) | 2007-01-05 | 2013-12-10 | Invensas Corp. | Microelectronic assembly with multi-layer support structure |
| US8241567B2 (en) | 2007-04-20 | 2012-08-14 | Becton, Dickinson And Company | Hydrogel compositions |
| US7518398B1 (en) * | 2007-10-04 | 2009-04-14 | Xilinx, Inc. | Integrated circuit with through-die via interface for die stacking |
| US8415783B1 (en) | 2007-10-04 | 2013-04-09 | Xilinx, Inc. | Apparatus and methodology for testing stacked die |
| US7635988B2 (en) * | 2007-11-19 | 2009-12-22 | Tier Logic, Inc. | Multi-port thin-film memory devices |
| US20090128189A1 (en) * | 2007-11-19 | 2009-05-21 | Raminda Udaya Madurawe | Three dimensional programmable devices |
| US7795913B2 (en) * | 2007-12-26 | 2010-09-14 | Tier Logic | Programmable latch based multiplier |
| US7573293B2 (en) * | 2007-12-26 | 2009-08-11 | Tier Logic, Inc. | Programmable logic based latches and shift registers |
| US7573294B2 (en) * | 2007-12-26 | 2009-08-11 | Tier Logic, Inc. | Programmable logic based latches and shift registers |
| US7602213B2 (en) * | 2007-12-26 | 2009-10-13 | Tier Logic, Inc. | Using programmable latch to implement logic |
| US7777330B2 (en) * | 2008-02-05 | 2010-08-17 | Freescale Semiconductor, Inc. | High bandwidth cache-to-processing unit communication in a multiple processor/cache system |
| US7973555B1 (en) | 2008-05-28 | 2011-07-05 | Xilinx, Inc. | Configuration interface to stacked FPGA |
| US8230375B2 (en) | 2008-09-14 | 2012-07-24 | Raminda Udaya Madurawe | Automated metal pattern generation for integrated circuits |
| US20100123477A1 (en) * | 2008-11-20 | 2010-05-20 | Shih-Wei Sun | Programmable array module |
| US9577642B2 (en) * | 2009-04-14 | 2017-02-21 | Monolithic 3D Inc. | Method to form a 3D semiconductor device |
| US8174841B2 (en) * | 2009-04-27 | 2012-05-08 | International Business Machines Corporation | Adaptive interconnect structure |
| US8063654B2 (en) * | 2009-07-17 | 2011-11-22 | Xilinx, Inc. | Apparatus and method for testing of stacked die structure |
| US10388863B2 (en) | 2009-10-12 | 2019-08-20 | Monolithic 3D Inc. | 3D memory device and structure |
| US11374118B2 (en) | 2009-10-12 | 2022-06-28 | Monolithic 3D Inc. | Method to form a 3D integrated circuit |
| US12027518B1 (en) | 2009-10-12 | 2024-07-02 | Monolithic 3D Inc. | 3D semiconductor devices and structures with metal layers |
| US11984445B2 (en) | 2009-10-12 | 2024-05-14 | Monolithic 3D Inc. | 3D semiconductor devices and structures with metal layers |
| US10157909B2 (en) | 2009-10-12 | 2018-12-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10043781B2 (en) | 2009-10-12 | 2018-08-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10910364B2 (en) | 2009-10-12 | 2021-02-02 | Monolitaic 3D Inc. | 3D semiconductor device |
| US10366970B2 (en) | 2009-10-12 | 2019-07-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11018133B2 (en) | 2009-10-12 | 2021-05-25 | Monolithic 3D Inc. | 3D integrated circuit |
| US10354995B2 (en) | 2009-10-12 | 2019-07-16 | Monolithic 3D Inc. | Semiconductor memory device and structure |
| US8159060B2 (en) | 2009-10-29 | 2012-04-17 | International Business Machines Corporation | Hybrid bonding interface for 3-dimensional chip integration |
| US8315068B2 (en) * | 2009-11-12 | 2012-11-20 | International Business Machines Corporation | Integrated circuit die stacks having initially identical dies personalized with fuses and methods of manufacturing the same |
| US10217667B2 (en) | 2011-06-28 | 2019-02-26 | Monolithic 3D Inc. | 3D semiconductor device, fabrication method and system |
| US20140013129A1 (en) * | 2012-07-09 | 2014-01-09 | L. Pierre de Rochemont | Hybrid computing module |
| US10497713B2 (en) | 2010-11-18 | 2019-12-03 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US12362219B2 (en) | 2010-11-18 | 2025-07-15 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US11482440B2 (en) | 2010-12-16 | 2022-10-25 | Monolithic 3D Inc. | 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits |
| US11257867B1 (en) | 2010-10-11 | 2022-02-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with oxide bonds |
| US10290682B2 (en) | 2010-10-11 | 2019-05-14 | Monolithic 3D Inc. | 3D IC semiconductor device and structure with stacked memory |
| US10896931B1 (en) | 2010-10-11 | 2021-01-19 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11018191B1 (en) | 2010-10-11 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11600667B1 (en) | 2010-10-11 | 2023-03-07 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
| US11158674B2 (en) | 2010-10-11 | 2021-10-26 | Monolithic 3D Inc. | Method to produce a 3D semiconductor device and structure |
| US11315980B1 (en) | 2010-10-11 | 2022-04-26 | Monolithic 3D Inc. | 3D semiconductor device and structure with transistors |
| US11227897B2 (en) | 2010-10-11 | 2022-01-18 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
| US11469271B2 (en) | 2010-10-11 | 2022-10-11 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
| US11024673B1 (en) | 2010-10-11 | 2021-06-01 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11855114B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
| US10998374B1 (en) | 2010-10-13 | 2021-05-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
| US10943934B2 (en) | 2010-10-13 | 2021-03-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
| US11855100B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
| US11984438B2 (en) | 2010-10-13 | 2024-05-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
| US11869915B2 (en) | 2010-10-13 | 2024-01-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
| US12094892B2 (en) | 2010-10-13 | 2024-09-17 | Monolithic 3D Inc. | 3D micro display device and structure |
| US11163112B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
| US11437368B2 (en) | 2010-10-13 | 2022-09-06 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
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| US11063071B1 (en) | 2010-10-13 | 2021-07-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
| US10978501B1 (en) | 2010-10-13 | 2021-04-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
| US11043523B1 (en) | 2010-10-13 | 2021-06-22 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
| US10833108B2 (en) | 2010-10-13 | 2020-11-10 | Monolithic 3D Inc. | 3D microdisplay device and structure |
| US10679977B2 (en) | 2010-10-13 | 2020-06-09 | Monolithic 3D Inc. | 3D microdisplay device and structure |
| US12360310B2 (en) | 2010-10-13 | 2025-07-15 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
| US11164898B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
| US11929372B2 (en) | 2010-10-13 | 2024-03-12 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
| US11404466B2 (en) | 2010-10-13 | 2022-08-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
| US11327227B2 (en) | 2010-10-13 | 2022-05-10 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
| US11694922B2 (en) | 2010-10-13 | 2023-07-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
| US8159268B1 (en) | 2010-11-16 | 2012-04-17 | Raminda Udaya Madurawe | Interconnect structures for metal configurable integrated circuits |
| US8159266B1 (en) | 2010-11-16 | 2012-04-17 | Raminda Udaya Madurawe | Metal configurable integrated circuits |
| US8159265B1 (en) | 2010-11-16 | 2012-04-17 | Raminda Udaya Madurawe | Memory for metal configurable integrated circuits |
| US11121021B2 (en) | 2010-11-18 | 2021-09-14 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11784082B2 (en) | 2010-11-18 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
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| US11923230B1 (en) | 2010-11-18 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
| US11164770B1 (en) | 2010-11-18 | 2021-11-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
| US11735462B2 (en) | 2010-11-18 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
| US11615977B2 (en) | 2010-11-18 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US12100611B2 (en) | 2010-11-18 | 2024-09-24 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
| US11854857B1 (en) | 2010-11-18 | 2023-12-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
| US12136562B2 (en) | 2010-11-18 | 2024-11-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
| US11107721B2 (en) | 2010-11-18 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with NAND logic |
| US11004719B1 (en) | 2010-11-18 | 2021-05-11 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
| US11094576B1 (en) | 2010-11-18 | 2021-08-17 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
| US11508605B2 (en) | 2010-11-18 | 2022-11-22 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US11482439B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors |
| US11804396B2 (en) | 2010-11-18 | 2023-10-31 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
| US11018042B1 (en) | 2010-11-18 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US11031275B2 (en) | 2010-11-18 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
| US11610802B2 (en) | 2010-11-18 | 2023-03-21 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes |
| US12272586B2 (en) | 2010-11-18 | 2025-04-08 | Monolithic 3D Inc. | 3D semiconductor memory device and structure with memory and metal layers |
| US11521888B2 (en) | 2010-11-18 | 2022-12-06 | Monolithic 3D Inc. | 3D semiconductor device and structure with high-k metal gate transistors |
| US11443971B2 (en) | 2010-11-18 | 2022-09-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
| US12068187B2 (en) | 2010-11-18 | 2024-08-20 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding and DRAM memory cells |
| US12033884B2 (en) | 2010-11-18 | 2024-07-09 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
| US11569117B2 (en) | 2010-11-18 | 2023-01-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
| US12154817B1 (en) | 2010-11-18 | 2024-11-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
| US11211279B2 (en) | 2010-11-18 | 2021-12-28 | Monolithic 3D Inc. | Method for processing a 3D integrated circuit and structure |
| US11862503B2 (en) | 2010-11-18 | 2024-01-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
| US11901210B2 (en) | 2010-11-18 | 2024-02-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
| US11355380B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | Methods for producing 3D semiconductor memory device and structure utilizing alignment marks |
| US12144190B2 (en) | 2010-11-18 | 2024-11-12 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding and memory cells preliminary class |
| US11482438B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
| US11495484B2 (en) | 2010-11-18 | 2022-11-08 | Monolithic 3D Inc. | 3D semiconductor devices and structures with at least two single-crystal layers |
| US11355381B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US12243765B2 (en) | 2010-11-18 | 2025-03-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
| US12463076B2 (en) | 2010-12-16 | 2025-11-04 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US8519515B2 (en) | 2011-04-13 | 2013-08-27 | United Microlectronics Corp. | TSV structure and method for forming the same |
| US8481425B2 (en) | 2011-05-16 | 2013-07-09 | United Microelectronics Corp. | Method for fabricating through-silicon via structure |
| US8822336B2 (en) | 2011-06-16 | 2014-09-02 | United Microelectronics Corp. | Through-silicon via forming method |
| US10388568B2 (en) | 2011-06-28 | 2019-08-20 | Monolithic 3D Inc. | 3D semiconductor device and system |
| US8828745B2 (en) | 2011-07-06 | 2014-09-09 | United Microelectronics Corp. | Method for manufacturing through-silicon via |
| US8716876B1 (en) * | 2011-11-11 | 2014-05-06 | Altera Corporation | Systems and methods for stacking a memory chip above an integrated circuit chip |
| US20130157639A1 (en) * | 2011-12-16 | 2013-06-20 | SRC Computers, LLC | Mobile electronic devices utilizing reconfigurable processing techniques to enable higher speed applications with lowered power consumption |
| US8518823B2 (en) | 2011-12-23 | 2013-08-27 | United Microelectronics Corp. | Through silicon via and method of forming the same |
| US8609529B2 (en) | 2012-02-01 | 2013-12-17 | United Microelectronics Corp. | Fabrication method and structure of through silicon via |
| US11088050B2 (en) | 2012-04-09 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers |
| US11410912B2 (en) | 2012-04-09 | 2022-08-09 | Monolithic 3D Inc. | 3D semiconductor device with vias and isolation layers |
| US11594473B2 (en) | 2012-04-09 | 2023-02-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
| US11164811B2 (en) | 2012-04-09 | 2021-11-02 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers and oxide-to-oxide bonding |
| US11476181B1 (en) | 2012-04-09 | 2022-10-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US10600888B2 (en) | 2012-04-09 | 2020-03-24 | Monolithic 3D Inc. | 3D semiconductor device |
| US11694944B1 (en) | 2012-04-09 | 2023-07-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
| US11881443B2 (en) | 2012-04-09 | 2024-01-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
| US11616004B1 (en) | 2012-04-09 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
| US11735501B1 (en) | 2012-04-09 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
| US8691600B2 (en) | 2012-05-02 | 2014-04-08 | United Microelectronics Corp. | Method for testing through-silicon-via (TSV) structures |
| US8691688B2 (en) | 2012-06-18 | 2014-04-08 | United Microelectronics Corp. | Method of manufacturing semiconductor structure |
| US9275933B2 (en) | 2012-06-19 | 2016-03-01 | United Microelectronics Corp. | Semiconductor device |
| US8900996B2 (en) | 2012-06-21 | 2014-12-02 | United Microelectronics Corp. | Through silicon via structure and method of fabricating the same |
| US8525296B1 (en) | 2012-06-26 | 2013-09-03 | United Microelectronics Corp. | Capacitor structure and method of forming the same |
| US8912844B2 (en) | 2012-10-09 | 2014-12-16 | United Microelectronics Corp. | Semiconductor structure and method for reducing noise therein |
| US9064077B2 (en) * | 2012-11-28 | 2015-06-23 | Qualcomm Incorporated | 3D floorplanning using 2D and 3D blocks |
| US8984463B2 (en) | 2012-11-28 | 2015-03-17 | Qualcomm Incorporated | Data transfer across power domains |
| US9035457B2 (en) | 2012-11-29 | 2015-05-19 | United Microelectronics Corp. | Substrate with integrated passive devices and method of manufacturing the same |
| US8716104B1 (en) | 2012-12-20 | 2014-05-06 | United Microelectronics Corp. | Method of fabricating isolation structure |
| US11309292B2 (en) | 2012-12-22 | 2022-04-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11961827B1 (en) | 2012-12-22 | 2024-04-16 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11063024B1 (en) | 2012-12-22 | 2021-07-13 | Monlithic 3D Inc. | Method to form a 3D semiconductor device and structure |
| US11967583B2 (en) | 2012-12-22 | 2024-04-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11217565B2 (en) | 2012-12-22 | 2022-01-04 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
| US12051674B2 (en) | 2012-12-22 | 2024-07-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11784169B2 (en) | 2012-12-22 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11018116B2 (en) | 2012-12-22 | 2021-05-25 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
| US11916045B2 (en) | 2012-12-22 | 2024-02-27 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US10903089B1 (en) | 2012-12-29 | 2021-01-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US12249538B2 (en) | 2012-12-29 | 2025-03-11 | Monolithic 3D Inc. | 3D semiconductor device and structure including power distribution grids |
| US11004694B1 (en) | 2012-12-29 | 2021-05-11 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11430667B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
| US10600657B2 (en) | 2012-12-29 | 2020-03-24 | Monolithic 3D Inc | 3D semiconductor device and structure |
| US11177140B2 (en) | 2012-12-29 | 2021-11-16 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10651054B2 (en) | 2012-12-29 | 2020-05-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11087995B1 (en) | 2012-12-29 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10115663B2 (en) | 2012-12-29 | 2018-10-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11430668B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
| US10892169B2 (en) | 2012-12-29 | 2021-01-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| KR102032895B1 (ko) | 2013-01-28 | 2019-11-08 | 삼성전자주식회사 | 기능 유닛들 간의 기능 로직 공유 장치, 방법 및 재구성 가능 프로세서 |
| US9536840B2 (en) | 2013-02-12 | 2017-01-03 | Qualcomm Incorporated | Three-dimensional (3-D) integrated circuits (3DICS) with graphene shield, and related components and methods |
| US9041448B2 (en) | 2013-03-05 | 2015-05-26 | Qualcomm Incorporated | Flip-flops in a monolithic three-dimensional (3D) integrated circuit (IC) (3DIC) and related methods |
| US9177890B2 (en) | 2013-03-07 | 2015-11-03 | Qualcomm Incorporated | Monolithic three dimensional integration of semiconductor integrated circuits |
| US8902663B1 (en) | 2013-03-11 | 2014-12-02 | Monolithic 3D Inc. | Method of maintaining a memory state |
| US11869965B2 (en) | 2013-03-11 | 2024-01-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
| US11935949B1 (en) | 2013-03-11 | 2024-03-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
| US10325651B2 (en) | 2013-03-11 | 2019-06-18 | Monolithic 3D Inc. | 3D semiconductor device with stacked memory |
| US12094965B2 (en) | 2013-03-11 | 2024-09-17 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
| US11088130B2 (en) | 2014-01-28 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10840239B2 (en) | 2014-08-26 | 2020-11-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11923374B2 (en) | 2013-03-12 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US12100646B2 (en) | 2013-03-12 | 2024-09-24 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11398569B2 (en) | 2013-03-12 | 2022-07-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US9171608B2 (en) | 2013-03-15 | 2015-10-27 | Qualcomm Incorporated | Three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) tiers, and related 3D integrated circuits (3DICS), 3DIC processor cores, and methods |
| US10224279B2 (en) | 2013-03-15 | 2019-03-05 | Monolithic 3D Inc. | Semiconductor device and structure |
| US8884398B2 (en) | 2013-04-01 | 2014-11-11 | United Microelectronics Corp. | Anti-fuse structure and programming method thereof |
| CN103207852B (zh) * | 2013-04-03 | 2016-03-02 | 北京华清瑞达科技有限公司 | 多总线嵌入式处理装置 |
| US11270055B1 (en) | 2013-04-15 | 2022-03-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
| US11720736B2 (en) | 2013-04-15 | 2023-08-08 | Monolithic 3D Inc. | Automation methods for 3D integrated circuits and devices |
| US11487928B2 (en) | 2013-04-15 | 2022-11-01 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
| US11574109B1 (en) | 2013-04-15 | 2023-02-07 | Monolithic 3D Inc | Automation methods for 3D integrated circuits and devices |
| US9021414B1 (en) | 2013-04-15 | 2015-04-28 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
| US11030371B2 (en) | 2013-04-15 | 2021-06-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
| US11341309B1 (en) | 2013-04-15 | 2022-05-24 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
| US9287173B2 (en) | 2013-05-23 | 2016-03-15 | United Microelectronics Corp. | Through silicon via and process thereof |
| US9123730B2 (en) | 2013-07-11 | 2015-09-01 | United Microelectronics Corp. | Semiconductor device having through silicon trench shielding structure surrounding RF circuit |
| US9024416B2 (en) | 2013-08-12 | 2015-05-05 | United Microelectronics Corp. | Semiconductor structure |
| US8916471B1 (en) | 2013-08-26 | 2014-12-23 | United Microelectronics Corp. | Method for forming semiconductor structure having through silicon via for signal and shielding structure |
| US9048223B2 (en) | 2013-09-03 | 2015-06-02 | United Microelectronics Corp. | Package structure having silicon through vias connected to ground potential |
| US9117804B2 (en) | 2013-09-13 | 2015-08-25 | United Microelectronics Corporation | Interposer structure and manufacturing method thereof |
| US9343359B2 (en) | 2013-12-25 | 2016-05-17 | United Microelectronics Corp. | Integrated structure and method for fabricating the same |
| US12094829B2 (en) | 2014-01-28 | 2024-09-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11107808B1 (en) | 2014-01-28 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11031394B1 (en) | 2014-01-28 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10297586B2 (en) | 2015-03-09 | 2019-05-21 | Monolithic 3D Inc. | Methods for processing a 3D semiconductor device |
| US10340203B2 (en) | 2014-02-07 | 2019-07-02 | United Microelectronics Corp. | Semiconductor structure with through silicon via and method for fabricating and testing the same |
| EP3158839B1 (en) * | 2014-06-23 | 2020-12-16 | Zglue, Inc. | System and methods for producing modular stacked integrated circuits |
| US9954533B2 (en) * | 2014-12-16 | 2018-04-24 | Samsung Electronics Co., Ltd. | DRAM-based reconfigurable logic |
| US11056468B1 (en) | 2015-04-19 | 2021-07-06 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10381328B2 (en) | 2015-04-19 | 2019-08-13 | Monolithic 3D Inc. | Semiconductor device and structure |
| US11011507B1 (en) | 2015-04-19 | 2021-05-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10825779B2 (en) | 2015-04-19 | 2020-11-03 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US9886193B2 (en) * | 2015-05-15 | 2018-02-06 | International Business Machines Corporation | Architecture and implementation of cortical system, and fabricating an architecture using 3D wafer scale integration |
| US11956952B2 (en) | 2015-08-23 | 2024-04-09 | Monolithic 3D Inc. | Semiconductor memory device and structure |
| US12250830B2 (en) | 2015-09-21 | 2025-03-11 | Monolithic 3D Inc. | 3D semiconductor memory devices and structures |
| WO2017053329A1 (en) | 2015-09-21 | 2017-03-30 | Monolithic 3D Inc | 3d semiconductor device and structure |
| US11114427B2 (en) | 2015-11-07 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor processor and memory device and structure |
| US12178055B2 (en) | 2015-09-21 | 2024-12-24 | Monolithic 3D Inc. | 3D semiconductor memory devices and structures |
| US12477752B2 (en) | 2015-09-21 | 2025-11-18 | Monolithic 3D Inc. | 3D semiconductor memory devices and structures |
| US11978731B2 (en) | 2015-09-21 | 2024-05-07 | Monolithic 3D Inc. | Method to produce a multi-level semiconductor memory device and structure |
| US11937422B2 (en) | 2015-11-07 | 2024-03-19 | Monolithic 3D Inc. | Semiconductor memory device and structure |
| US12100658B2 (en) | 2015-09-21 | 2024-09-24 | Monolithic 3D Inc. | Method to produce a 3D multilayer semiconductor device and structure |
| US10522225B1 (en) | 2015-10-02 | 2019-12-31 | Monolithic 3D Inc. | Semiconductor device with non-volatile memory |
| US12120880B1 (en) | 2015-10-24 | 2024-10-15 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
| US12035531B2 (en) | 2015-10-24 | 2024-07-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
| US12219769B2 (en) | 2015-10-24 | 2025-02-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
| US10847540B2 (en) | 2015-10-24 | 2020-11-24 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US11114464B2 (en) | 2015-10-24 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11991884B1 (en) | 2015-10-24 | 2024-05-21 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
| US11296115B1 (en) | 2015-10-24 | 2022-04-05 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10418369B2 (en) | 2015-10-24 | 2019-09-17 | Monolithic 3D Inc. | Multi-level semiconductor memory device and structure |
| US12016181B2 (en) | 2015-10-24 | 2024-06-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
| US10580735B2 (en) | 2016-10-07 | 2020-03-03 | Xcelsis Corporation | Stacked IC structure with system level wiring on multiple sides of the IC die |
| US10607136B2 (en) | 2017-08-03 | 2020-03-31 | Xcelsis Corporation | Time borrowing between layers of a three dimensional chip stack |
| KR102393946B1 (ko) | 2016-10-07 | 2022-05-03 | 엑셀시스 코포레이션 | 직접-접합된 네이티브 상호접속부 및 능동 베이스 다이 |
| US10672745B2 (en) * | 2016-10-07 | 2020-06-02 | Xcelsis Corporation | 3D processor |
| US10672663B2 (en) | 2016-10-07 | 2020-06-02 | Xcelsis Corporation | 3D chip sharing power circuit |
| US10580757B2 (en) | 2016-10-07 | 2020-03-03 | Xcelsis Corporation | Face-to-face mounted IC dies with orthogonal top interconnect layers |
| US11711928B2 (en) | 2016-10-10 | 2023-07-25 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
| US11329059B1 (en) | 2016-10-10 | 2022-05-10 | Monolithic 3D Inc. | 3D memory devices and structures with thinned single crystal substrates |
| US11812620B2 (en) | 2016-10-10 | 2023-11-07 | Monolithic 3D Inc. | 3D DRAM memory devices and structures with control circuits |
| US11930648B1 (en) | 2016-10-10 | 2024-03-12 | Monolithic 3D Inc. | 3D memory devices and structures with metal layers |
| US12225704B2 (en) | 2016-10-10 | 2025-02-11 | Monolithic 3D Inc. | 3D memory devices and structures with memory arrays and metal layers |
| US11869591B2 (en) | 2016-10-10 | 2024-01-09 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
| US11251149B2 (en) | 2016-10-10 | 2022-02-15 | Monolithic 3D Inc. | 3D memory device and structure |
| US10601426B1 (en) | 2018-09-06 | 2020-03-24 | Intel Corporation | Programmable logic device with fine-grained disaggregation |
| US10673439B1 (en) * | 2019-03-27 | 2020-06-02 | Xilinx, Inc. | Adaptive integrated programmable device platform |
| US11158652B1 (en) | 2019-04-08 | 2021-10-26 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| US11763864B2 (en) | 2019-04-08 | 2023-09-19 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures with bit-line pillars |
| US11296106B2 (en) | 2019-04-08 | 2022-04-05 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| US10892016B1 (en) | 2019-04-08 | 2021-01-12 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| US11018156B2 (en) | 2019-04-08 | 2021-05-25 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| US12068257B1 (en) | 2020-12-29 | 2024-08-20 | Xilinx, Inc. | Integrated circuit (IC) structure protection scheme |
| CN113722268B (zh) * | 2021-09-02 | 2024-07-19 | 西安紫光国芯半导体有限公司 | 一种存算一体的堆叠芯片 |
| US11901338B2 (en) | 2021-10-29 | 2024-02-13 | Xilinx, Inc. | Interwafer connection structure for coupling wafers in a wafer stack |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0665998A4 (en) | 1993-08-03 | 1996-06-12 | Xilinx Inc | FPGA CIRCUIT WITH MICROPROCESSOR. |
| EP0721662A1 (en) * | 1993-09-30 | 1996-07-17 | Kopin Corporation | Three-dimensional processor using transferred thin film circuits |
| US5585675A (en) | 1994-05-11 | 1996-12-17 | Harris Corporation | Semiconductor die packaging tub having angularly offset pad-to-pad via structure configured to allow three-dimensional stacking and electrical interconnections among multiple identical tubs |
| JPH08268189A (ja) | 1995-03-30 | 1996-10-15 | Mitsubishi Motors Corp | 並走車両検知装置 |
| US5838060A (en) * | 1995-12-12 | 1998-11-17 | Comer; Alan E. | Stacked assemblies of semiconductor packages containing programmable interconnect |
| US5953588A (en) * | 1996-12-21 | 1999-09-14 | Irvine Sensors Corporation | Stackable layers containing encapsulated IC chips |
| JPH10268189A (ja) | 1997-03-28 | 1998-10-09 | Asahi Glass Co Ltd | 投射光学装置 |
| JPH11168185A (ja) * | 1997-12-03 | 1999-06-22 | Rohm Co Ltd | 積層基板体および半導体装置 |
| US6072233A (en) * | 1998-05-04 | 2000-06-06 | Micron Technology, Inc. | Stackable ball grid array package |
| US6092174A (en) | 1998-06-01 | 2000-07-18 | Context, Inc. | Dynamically reconfigurable distributed integrated circuit processor and method |
| US6051887A (en) * | 1998-08-28 | 2000-04-18 | Medtronic, Inc. | Semiconductor stacked device for implantable medical apparatus |
| US6313522B1 (en) * | 1998-08-28 | 2001-11-06 | Micron Technology, Inc. | Semiconductor structure having stacked semiconductor devices |
| JP3754221B2 (ja) | 1999-03-05 | 2006-03-08 | ローム株式会社 | マルチチップ型半導体装置 |
| US6449170B1 (en) * | 2000-08-30 | 2002-09-10 | Advanced Micro Devices, Inc. | Integrated circuit package incorporating camouflaged programmable elements |
| US6451626B1 (en) * | 2001-07-27 | 2002-09-17 | Charles W.C. Lin | Three-dimensional stacked semiconductor package |
| US7126214B2 (en) * | 2001-12-05 | 2006-10-24 | Arbor Company Llp | Reconfigurable processor module comprising hybrid stacked integrated circuit die elements |
| US6627985B2 (en) * | 2001-12-05 | 2003-09-30 | Arbor Company Llp | Reconfigurable processor module comprising hybrid stacked integrated circuit die elements |
| US7082591B2 (en) * | 2002-01-17 | 2006-07-25 | Irvine Sensors Corporation | Method for effectively embedding various integrated circuits within field programmable gate arrays |
| US7183643B2 (en) * | 2003-11-04 | 2007-02-27 | Tessera, Inc. | Stacked packages and systems incorporating the same |
| US6991947B1 (en) * | 2004-03-22 | 2006-01-31 | Tushar Gheewala | Hybrid semiconductor circuit with programmable intraconnectivity |
-
2001
- 2001-12-05 US US10/012,057 patent/US6627985B2/en not_active Ceased
-
2002
- 2002-11-08 JP JP2003551682A patent/JP2005512229A/ja active Pending
- 2002-11-08 EP EP02789540A patent/EP1461715A4/en not_active Withdrawn
- 2002-11-08 WO PCT/US2002/035972 patent/WO2003050694A1/en not_active Ceased
- 2002-11-08 CA CA002467821A patent/CA2467821C/en not_active Expired - Fee Related
- 2002-11-08 KR KR10-2004-7008724A patent/KR20040072645A/ko not_active Ceased
- 2002-11-08 AU AU2002352582A patent/AU2002352582A1/en not_active Abandoned
-
2003
- 2003-06-02 US US10/452,113 patent/US6781226B2/en not_active Expired - Lifetime
-
2008
- 2008-07-23 US US12/178,511 patent/USRE42035E1/en not_active Expired - Lifetime
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12225711B2 (en) | 2011-01-14 | 2025-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising wiring layer over driver circuit |
| JP2023178501A (ja) * | 2011-01-14 | 2023-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2014112082A1 (ja) * | 2013-01-17 | 2014-07-24 | 富士通株式会社 | プログラマブルロジック装置 |
| US12287687B2 (en) | 2019-04-23 | 2025-04-29 | Arbor Company, Lllp | Systems and methods for integrating batteries to maintain volatile memories and protect the volatile memories from excessive temperatures |
| US11797067B2 (en) | 2019-04-23 | 2023-10-24 | Arbor Company, Lllp | Systems and methods for reconfiguring dual-function cell arrays |
| JP2022531983A (ja) * | 2019-05-21 | 2022-07-12 | アーバー・カンパニー・エルエルエルピイ | 積層集積回路ダイ素子と電池を集積するためのシステムおよび方法 |
| JP7368505B2 (ja) | 2019-05-21 | 2023-10-24 | アーバー・カンパニー・エルエルエルピイ | 積層集積回路ダイ素子と電池を集積するためのシステムおよび方法 |
| JP7617096B2 (ja) | 2019-10-28 | 2025-01-17 | ザイリンクス インコーポレイテッド | 適応システムの構成、セキュリティ、及び管理のためのサブシステム |
| JP2022554255A (ja) * | 2019-10-28 | 2022-12-28 | ザイリンクス インコーポレイテッド | 適応システムの構成、セキュリティ、及び管理のためのサブシステム |
| US11895191B2 (en) | 2020-06-29 | 2024-02-06 | Arbor Company, Lllp | Mobile IoT edge device using 3D-die stacking re-configurable processor module with 5G processor-independent modem |
| JP7402357B2 (ja) | 2020-06-29 | 2023-12-20 | アーバー・カンパニー・エルエルエルピイ | プロセッサ非依存5Gモデムを有する3Dダイ・スタッキングの再構成可能プロセッサ・モジュールを使用するモバイルIoTエッジ・デバイス |
| JP2023531294A (ja) * | 2020-06-29 | 2023-07-21 | アーバー・カンパニー・エルエルエルピイ | プロセッサ非依存5Gモデムを有する3Dダイ・スタッキングの再構成可能プロセッサ・モジュールを使用するモバイルIoTエッジ・デバイス |
| US12470628B2 (en) | 2020-06-29 | 2025-11-11 | Arbor Company, Lllp | Mobile IoT edge device using 3D-die stacking re-configurable processor module with 5G processor-independent modem |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1461715A1 (en) | 2004-09-29 |
| EP1461715A4 (en) | 2007-08-01 |
| US6781226B2 (en) | 2004-08-24 |
| CA2467821A1 (en) | 2003-06-19 |
| US6627985B2 (en) | 2003-09-30 |
| AU2002352582A1 (en) | 2003-06-23 |
| KR20040072645A (ko) | 2004-08-18 |
| US20030102495A1 (en) | 2003-06-05 |
| CA2467821C (en) | 2006-09-12 |
| US20040000705A1 (en) | 2004-01-01 |
| USRE42035E1 (en) | 2011-01-18 |
| WO2003050694A1 (en) | 2003-06-19 |
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