JP2005510861A - 投影照明システムの照明角度分布の特性化 - Google Patents
投影照明システムの照明角度分布の特性化 Download PDFInfo
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- JP2005510861A JP2005510861A JP2003548036A JP2003548036A JP2005510861A JP 2005510861 A JP2005510861 A JP 2005510861A JP 2003548036 A JP2003548036 A JP 2003548036A JP 2003548036 A JP2003548036 A JP 2003548036A JP 2005510861 A JP2005510861 A JP 2005510861A
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- illumination
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
a)投影露光システムにおける瞳平面の下流のビーム経路における平面で光源の照明強度を測定する工程と、
b)照明ジオメトリを変化させる工程と、
c)投影露光システムにおける瞳平面の下流のビーム経路における平面で光源の照明強度を再測定する工程とを含む方法に関する。
d)照明光学系の光軸に関して向き方向で異なるフィルター機能を有するフィルター素子が、工程a)の前に照明光学系の瞳平面の領域に導入され、
e)工程b)は、光軸を中心にしたフィルター素子の回転を含み、
f)少なくとも1つのパラメータは、フィルター機能と、回転角度と、測定された照明強度とから計算されることとによって、達成される。
I(H)=(T(AQ)I1−(T(TQ)I2))/(T(AQ)2−T(TQ)2)
(4)
I(V)=(T(AQ)I2−(T(TQ)I1))/T(AQ)2−T(TQ)2)
(5)
(1)への代入により瞳の非対称性eを生じる。
Claims (2)
- 特にマイクロリソグラフィのための、投影露光システムにおいて物体を照明するために使用される光源からの照明の角度分布に特有な少なくとも1つのパラメータを決定する方法であって、
a)投影露光システムにおける瞳平面の下流のビーム経路における平面で光源の照明強度を測定する工程と、
b)照明ジオメトリを変化させる工程と、
c)投影露光システムにおける瞳平面の下流のビーム経路における平面で光源の照明強度を再測定する工程とを含み、
d)照明光学系(5)の光軸に関して向き方向で異なるフィルター機能(12、13、14、15)を有するフィルター素子(8;108)が、工程a)の前に照明光学系5の瞳平面の領域に導入され、
e)工程b)は、光軸を中心にしたフィルター素子(8;108)の回転(30;130)を含み、
f)少なくとも1つのパラメータ(e)は、フィルター機能(12、13、14、15)と、回転角度(Φ)と、測定された照明強度(I1、I2)とから計算されることとを特徴とする、方法。 - 工程e)(130)およびf)(132)はフィルター素子(108)の複数の回転された位置で実行されることを特徴とする請求項1記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10158921A DE10158921A1 (de) | 2001-11-30 | 2001-11-30 | Verfahren zum Bestimmen von mindestens einer Kenngröße, die für die Beleuchtungswinkelverteilung einer der Beleuchtung eines Gegenstandes dienenden Lichtquelle einer Projektionsbelichtungsanlage charakteristisch ist |
PCT/EP2002/013430 WO2003046663A2 (de) | 2001-11-30 | 2002-11-28 | Charakterisierung der beleuchtungswinkelverteilung einer projektionsbelichtungs anlage |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005510861A true JP2005510861A (ja) | 2005-04-21 |
Family
ID=7707621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003548036A Pending JP2005510861A (ja) | 2001-11-30 | 2002-11-28 | 投影照明システムの照明角度分布の特性化 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6985218B2 (ja) |
JP (1) | JP2005510861A (ja) |
AU (1) | AU2002356748A1 (ja) |
DE (1) | DE10158921A1 (ja) |
WO (1) | WO2003046663A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008525828A (ja) * | 2004-12-23 | 2008-07-17 | カール・ツァイス・エスエムティー・アーゲー | 非対称瞳照射を補償するフィルタ装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005006079A1 (de) * | 2003-07-07 | 2005-01-20 | Carl Zeiss Smt Ag | Beleuchtungseinrichtung für eine mikrolithographische projektionsbelichtungsanlage |
DE102005004216A1 (de) * | 2005-01-29 | 2006-08-03 | Carl Zeiss Smt Ag | Beleuchtungssystem, insbesondere für eine Projektionsbelichtungsanlage in der Halbleiterlithographie |
US20080092944A1 (en) * | 2006-10-16 | 2008-04-24 | Leonid Rubin | Semiconductor structure and process for forming ohmic connections to a semiconductor structure |
EP2126636B1 (en) | 2007-01-30 | 2012-06-13 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
DE102009016456A1 (de) | 2008-06-03 | 2009-12-24 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die Mikrolithografie |
DE102012205181B4 (de) * | 2012-03-30 | 2015-09-24 | Carl Zeiss Smt Gmbh | Messvorrichtung zum Vermessen einer Beleuchtungseigenschaft |
WO2017144265A1 (en) * | 2016-02-25 | 2017-08-31 | Asml Netherlands B.V. | Beam homogenizer, illumination system and metrology system |
DE102018201009A1 (de) | 2018-01-23 | 2019-07-25 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithographie |
DE102018201010A1 (de) | 2018-01-23 | 2019-07-25 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithographie |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5673102A (en) * | 1991-02-22 | 1997-09-30 | Canon Kabushiki Kaisha | Image farming and microdevice manufacturing method and exposure apparatus in which a light source includes four quadrants of predetermined intensity |
US6285443B1 (en) | 1993-12-13 | 2001-09-04 | Carl-Zeiss-Stiftung | Illuminating arrangement for a projection microlithographic apparatus |
JPH09199390A (ja) * | 1996-01-16 | 1997-07-31 | Hitachi Ltd | パターン形成方法、投影露光装置および半導体装置の製造方法 |
US6333777B1 (en) * | 1997-07-18 | 2001-12-25 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
JP3262039B2 (ja) * | 1997-07-18 | 2002-03-04 | キヤノン株式会社 | 露光装置及びそれを用いたデバイスの製造方法 |
US6741394B1 (en) | 1998-03-12 | 2004-05-25 | Nikon Corporation | Optical integrator, illumination optical apparatus, exposure apparatus and observation apparatus |
JP3937580B2 (ja) * | 1998-04-30 | 2007-06-27 | キヤノン株式会社 | 投影露光装置及びそれを用いたデバイスの製造方法 |
DE10062579A1 (de) * | 1999-12-15 | 2001-06-21 | Nikon Corp | Optischer Integrierer,optische Beleuchtungseinrichtung, Photolithographie-Belichtungseinrichtung,und Beobachtungseinrichtung |
-
2001
- 2001-11-30 DE DE10158921A patent/DE10158921A1/de not_active Withdrawn
-
2002
- 2002-11-28 JP JP2003548036A patent/JP2005510861A/ja active Pending
- 2002-11-28 WO PCT/EP2002/013430 patent/WO2003046663A2/de active Application Filing
- 2002-11-28 AU AU2002356748A patent/AU2002356748A1/en not_active Abandoned
-
2004
- 2004-05-27 US US10/855,252 patent/US6985218B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008525828A (ja) * | 2004-12-23 | 2008-07-17 | カール・ツァイス・エスエムティー・アーゲー | 非対称瞳照射を補償するフィルタ装置 |
JP4700697B2 (ja) * | 2004-12-23 | 2011-06-15 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 非対称瞳照射を補償するフィルタ装置 |
US8246211B2 (en) | 2004-12-23 | 2012-08-21 | Carl Zeiss Smt Gmbh | Filter device for the compensation of an asymmetric pupil illumination |
US8480261B2 (en) | 2004-12-23 | 2013-07-09 | Carl Zeiss Smt Gmbh | Filter device for the compensation of an asymmetric pupil illumination |
US8636386B2 (en) | 2004-12-23 | 2014-01-28 | Carl Zeiss Smt Gmbh | Filter device for the compensation of an asymmetric pupil illumination |
Also Published As
Publication number | Publication date |
---|---|
DE10158921A1 (de) | 2003-06-26 |
AU2002356748A1 (en) | 2003-06-10 |
AU2002356748A8 (en) | 2003-06-10 |
US6985218B2 (en) | 2006-01-10 |
WO2003046663A3 (de) | 2003-12-18 |
WO2003046663A2 (de) | 2003-06-05 |
US20040257559A1 (en) | 2004-12-23 |
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