JP2005510058A5 - - Google Patents

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JP2005510058A5
JP2005510058A5 JP2003544809A JP2003544809A JP2005510058A5 JP 2005510058 A5 JP2005510058 A5 JP 2005510058A5 JP 2003544809 A JP2003544809 A JP 2003544809A JP 2003544809 A JP2003544809 A JP 2003544809A JP 2005510058 A5 JP2005510058 A5 JP 2005510058A5
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Japan
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test structure
wafer
pattern
changes
wavefront engineering
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JP2003544809A
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Japanese (ja)
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JP5013657B2 (ja
JP2005510058A (ja
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Priority claimed from US10/058,572 external-priority patent/US6673638B1/en
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JP2003544809A 2001-11-14 2002-11-14 半導体プロセスパラメータを制御する方法 Expired - Fee Related JP5013657B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US33571201P 2001-11-14 2001-11-14
US60/335,712 2001-11-14
US10/058,572 2002-01-28
US10/058,572 US6673638B1 (en) 2001-11-14 2002-01-28 Method and apparatus for the production of process sensitive lithographic features
PCT/US2002/036819 WO2003043075A1 (en) 2001-11-14 2002-11-14 Method and apparatus for the production of process sensitive lithographic features

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JP2005510058A JP2005510058A (ja) 2005-04-14
JP2005510058A5 true JP2005510058A5 (enExample) 2006-02-16
JP5013657B2 JP5013657B2 (ja) 2012-08-29

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US (1) US6673638B1 (enExample)
JP (1) JP5013657B2 (enExample)
WO (1) WO2003043075A1 (enExample)

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