JP5013657B2 - 半導体プロセスパラメータを制御する方法 - Google Patents

半導体プロセスパラメータを制御する方法 Download PDF

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Publication number
JP5013657B2
JP5013657B2 JP2003544809A JP2003544809A JP5013657B2 JP 5013657 B2 JP5013657 B2 JP 5013657B2 JP 2003544809 A JP2003544809 A JP 2003544809A JP 2003544809 A JP2003544809 A JP 2003544809A JP 5013657 B2 JP5013657 B2 JP 5013657B2
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Prior art keywords
test structure
wafer
focus
pattern
changes
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Japanese (ja)
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JP2005510058A5 (enExample
JP2005510058A (ja
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ベネディク・ジョゼフ・ジェイ．
ハンキンソン・マット
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2003544809A 2001-11-14 2002-11-14 半導体プロセスパラメータを制御する方法 Expired - Fee Related JP5013657B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US33571201P 2001-11-14 2001-11-14
US60/335,712 2001-11-14
US10/058,572 2002-01-28
US10/058,572 US6673638B1 (en) 2001-11-14 2002-01-28 Method and apparatus for the production of process sensitive lithographic features
PCT/US2002/036819 WO2003043075A1 (en) 2001-11-14 2002-11-14 Method and apparatus for the production of process sensitive lithographic features

Publications (3)

Publication Number Publication Date
JP2005510058A JP2005510058A (ja) 2005-04-14
JP2005510058A5 JP2005510058A5 (enExample) 2006-02-16
JP5013657B2 true JP5013657B2 (ja) 2012-08-29

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US (1) US6673638B1 (enExample)
JP (1) JP5013657B2 (enExample)
WO (1) WO2003043075A1 (enExample)

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US6673638B1 (en) 2004-01-06
JP2005510058A (ja) 2005-04-14

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