JP2005509266A5 - - Google Patents

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Publication number
JP2005509266A5
JP2005509266A5 JP2002575993A JP2002575993A JP2005509266A5 JP 2005509266 A5 JP2005509266 A5 JP 2005509266A5 JP 2002575993 A JP2002575993 A JP 2002575993A JP 2002575993 A JP2002575993 A JP 2002575993A JP 2005509266 A5 JP2005509266 A5 JP 2005509266A5
Authority
JP
Japan
Prior art keywords
layer
molecular
region
electronic device
electrical conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002575993A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005509266A (ja
Filing date
Publication date
Priority claimed from US09/815,922 external-priority patent/US6707063B2/en
Application filed filed Critical
Publication of JP2005509266A publication Critical patent/JP2005509266A/ja
Publication of JP2005509266A5 publication Critical patent/JP2005509266A5/ja
Pending legal-status Critical Current

Links

JP2002575993A 2001-03-22 2002-03-21 分子電子デバイスを形成するための保護層 Pending JP2005509266A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/815,922 US6707063B2 (en) 2001-03-22 2001-03-22 Passivation layer for molecular electronic device fabrication
PCT/US2002/008934 WO2002078056A2 (en) 2001-03-22 2002-03-21 Passivation layer for molecular electronic device fabrication

Publications (2)

Publication Number Publication Date
JP2005509266A JP2005509266A (ja) 2005-04-07
JP2005509266A5 true JP2005509266A5 (enExample) 2005-12-22

Family

ID=25219185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002575993A Pending JP2005509266A (ja) 2001-03-22 2002-03-21 分子電子デバイスを形成するための保護層

Country Status (5)

Country Link
US (2) US6707063B2 (enExample)
EP (1) EP1371063A2 (enExample)
JP (1) JP2005509266A (enExample)
KR (1) KR20030085015A (enExample)
WO (1) WO2002078056A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432740B1 (en) * 2001-06-28 2002-08-13 Hewlett-Packard Company Fabrication of molecular electronic circuit by imprinting
KR100470831B1 (ko) * 2002-05-20 2005-03-08 한국전자통신연구원 분자전자소자 제조방법
US7195343B2 (en) * 2004-08-27 2007-03-27 Lexmark International, Inc. Low ejection energy micro-fluid ejection heads
US7242215B2 (en) * 2004-10-27 2007-07-10 Hewlett-Packard Development Company, L.P. Nanoscale latches and impedance-encoded logic for use in nanoscale state machines, nanoscale pipelines, and in other nanoscale electronic circuits
US7443711B1 (en) 2004-12-16 2008-10-28 Hewlett-Packard Development Company, L.P. Non-volatile programmable impedance nanoscale devices
US7741638B2 (en) * 2005-11-23 2010-06-22 Hewlett-Packard Development Company, L.P. Control layer for a nanoscale electronic switching device
US8183554B2 (en) * 2006-04-03 2012-05-22 Blaise Laurent Mouttet Symmetrical programmable memresistor crossbar structure
US20070233761A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Crossbar arithmetic processor
US20070231972A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Manufacture of programmable crossbar signal processor
US7576565B2 (en) * 2006-04-03 2009-08-18 Blaise Laurent Mouttet Crossbar waveform driver circuit
US7302513B2 (en) * 2006-04-03 2007-11-27 Blaise Laurent Mouttet Programmable crossbar signal processor
US9965251B2 (en) * 2006-04-03 2018-05-08 Blaise Laurent Mouttet Crossbar arithmetic and summation processor
US7763552B2 (en) * 2006-04-28 2010-07-27 Hewlett-Packard Development Company, L.P. Method of interconnect formation using focused beams
US8766224B2 (en) 2006-10-03 2014-07-01 Hewlett-Packard Development Company, L.P. Electrically actuated switch
US8030754B2 (en) 2007-01-31 2011-10-04 Hewlett-Packard Development Company, L.P. Chip cooling channels formed in wafer bonding gap
WO2010082922A1 (en) * 2009-01-13 2010-07-22 Hewlett-Packard Development Company, L.P. Memristor having a triangular shaped electrode
WO2011010702A1 (ja) * 2009-07-22 2011-01-27 株式会社村田製作所 アンチヒューズ素子
TW201330282A (zh) * 2012-01-09 2013-07-16 隆達電子股份有限公司 齊納二極體結構及其製造方法
CN103730302B (zh) * 2012-10-10 2016-09-14 清华大学 场发射电子源及场发射装置
US12030081B2 (en) 2019-10-07 2024-07-09 The University Of Chicago Large lateral scale two-dimensional materials and other thin films, and associated systems and methods

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
JPS5679449A (en) 1979-11-30 1981-06-30 Mitsubishi Electric Corp Production of semiconductor device
US4371883A (en) * 1980-03-14 1983-02-01 The Johns Hopkins University Current controlled bistable electrical organic thin film switching device
JPH0669109B2 (ja) * 1984-12-07 1994-08-31 シャ−プ株式会社 光半導体装置
US5272359A (en) * 1988-04-07 1993-12-21 California Institute Of Technology Reversible non-volatile switch based on a TCNQ charge transfer complex
JPH02215173A (ja) * 1989-02-16 1990-08-28 Canon Inc スイッチング素子及びその作成方法
JPH02216173A (ja) 1989-02-17 1990-08-29 Canon Inc 画像形成装置のクリーニング装置
US5311039A (en) * 1990-04-24 1994-05-10 Seiko Epson Corporation PROM and ROM memory cells
US5177567A (en) * 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5350484A (en) 1992-09-08 1994-09-27 Intel Corporation Method for the anisotropic etching of metal films in the fabrication of interconnects
US5834824A (en) 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
US5514876A (en) * 1994-04-15 1996-05-07 Trw Inc. Multi-terminal resonant tunneling transistor
DE69531477T2 (de) * 1994-05-16 2004-07-15 Koninklijke Philips Electronics N.V. Halbleiteranordnung aus halbleitendem, organischem material
US5424560A (en) * 1994-05-31 1995-06-13 Motorola, Inc. Integrated multicolor organic led array
JP3683669B2 (ja) * 1997-03-21 2005-08-17 株式会社リコー 半導体発光素子
US6344662B1 (en) * 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
EP0968537B1 (en) * 1997-08-22 2012-05-02 Creator Technology B.V. A method of manufacturing a field-effect transistor substantially consisting of organic materials
US6600185B1 (en) * 1999-03-10 2003-07-29 Oki Electric Industry Co., Ltd. Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6459095B1 (en) * 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices
US6265243B1 (en) * 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
DE10001301A1 (de) 2000-01-14 2001-07-19 Opel Adam Ag Gewindemutter
US6541309B2 (en) 2001-03-21 2003-04-01 Hewlett-Packard Development Company Lp Fabricating a molecular electronic device having a protective barrier layer
US6458621B1 (en) * 2001-08-01 2002-10-01 Hewlett-Packard Company Batch fabricated molecular electronic devices with cost-effective lithographic electrodes

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