KR20030085015A - 분자 전자 장치 제조 방법, 분자 전자 장치 및 시스템 - Google Patents
분자 전자 장치 제조 방법, 분자 전자 장치 및 시스템 Download PDFInfo
- Publication number
- KR20030085015A KR20030085015A KR10-2003-7012211A KR20037012211A KR20030085015A KR 20030085015 A KR20030085015 A KR 20030085015A KR 20037012211 A KR20037012211 A KR 20037012211A KR 20030085015 A KR20030085015 A KR 20030085015A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- molecular
- region
- passivation
- electronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 71
- 238000005442 molecular electronic Methods 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000002052 molecular layer Substances 0.000 claims abstract description 29
- 238000000059 patterning Methods 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 26
- 239000000615 nonconductor Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 claims description 3
- 238000006731 degradation reaction Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 11
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 105
- 241000894007 species Species 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000013547 langmuir monolayer Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76823—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. transforming an insulating layer into a conductive layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/815,922 | 2001-03-22 | ||
| US09/815,922 US6707063B2 (en) | 2001-03-22 | 2001-03-22 | Passivation layer for molecular electronic device fabrication |
| PCT/US2002/008934 WO2002078056A2 (en) | 2001-03-22 | 2002-03-21 | Passivation layer for molecular electronic device fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20030085015A true KR20030085015A (ko) | 2003-11-01 |
Family
ID=25219185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-7012211A Ceased KR20030085015A (ko) | 2001-03-22 | 2002-03-21 | 분자 전자 장치 제조 방법, 분자 전자 장치 및 시스템 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6707063B2 (enExample) |
| EP (1) | EP1371063A2 (enExample) |
| JP (1) | JP2005509266A (enExample) |
| KR (1) | KR20030085015A (enExample) |
| WO (1) | WO2002078056A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100470831B1 (ko) * | 2002-05-20 | 2005-03-08 | 한국전자통신연구원 | 분자전자소자 제조방법 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6432740B1 (en) * | 2001-06-28 | 2002-08-13 | Hewlett-Packard Company | Fabrication of molecular electronic circuit by imprinting |
| US7195343B2 (en) * | 2004-08-27 | 2007-03-27 | Lexmark International, Inc. | Low ejection energy micro-fluid ejection heads |
| US7242215B2 (en) * | 2004-10-27 | 2007-07-10 | Hewlett-Packard Development Company, L.P. | Nanoscale latches and impedance-encoded logic for use in nanoscale state machines, nanoscale pipelines, and in other nanoscale electronic circuits |
| US7443711B1 (en) | 2004-12-16 | 2008-10-28 | Hewlett-Packard Development Company, L.P. | Non-volatile programmable impedance nanoscale devices |
| US7741638B2 (en) * | 2005-11-23 | 2010-06-22 | Hewlett-Packard Development Company, L.P. | Control layer for a nanoscale electronic switching device |
| US8183554B2 (en) * | 2006-04-03 | 2012-05-22 | Blaise Laurent Mouttet | Symmetrical programmable memresistor crossbar structure |
| US20070233761A1 (en) * | 2006-04-03 | 2007-10-04 | Mouttet Blaise L | Crossbar arithmetic processor |
| US20070231972A1 (en) * | 2006-04-03 | 2007-10-04 | Mouttet Blaise L | Manufacture of programmable crossbar signal processor |
| US7576565B2 (en) * | 2006-04-03 | 2009-08-18 | Blaise Laurent Mouttet | Crossbar waveform driver circuit |
| US7302513B2 (en) * | 2006-04-03 | 2007-11-27 | Blaise Laurent Mouttet | Programmable crossbar signal processor |
| US9965251B2 (en) * | 2006-04-03 | 2018-05-08 | Blaise Laurent Mouttet | Crossbar arithmetic and summation processor |
| US7763552B2 (en) * | 2006-04-28 | 2010-07-27 | Hewlett-Packard Development Company, L.P. | Method of interconnect formation using focused beams |
| US8766224B2 (en) | 2006-10-03 | 2014-07-01 | Hewlett-Packard Development Company, L.P. | Electrically actuated switch |
| US8030754B2 (en) | 2007-01-31 | 2011-10-04 | Hewlett-Packard Development Company, L.P. | Chip cooling channels formed in wafer bonding gap |
| WO2010082922A1 (en) * | 2009-01-13 | 2010-07-22 | Hewlett-Packard Development Company, L.P. | Memristor having a triangular shaped electrode |
| WO2011010702A1 (ja) * | 2009-07-22 | 2011-01-27 | 株式会社村田製作所 | アンチヒューズ素子 |
| TW201330282A (zh) * | 2012-01-09 | 2013-07-16 | 隆達電子股份有限公司 | 齊納二極體結構及其製造方法 |
| CN103730302B (zh) * | 2012-10-10 | 2016-09-14 | 清华大学 | 场发射电子源及场发射装置 |
| US12030081B2 (en) | 2019-10-07 | 2024-07-09 | The University Of Chicago | Large lateral scale two-dimensional materials and other thin films, and associated systems and methods |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5679449A (en) | 1979-11-30 | 1981-06-30 | Mitsubishi Electric Corp | Production of semiconductor device |
| US4371883A (en) * | 1980-03-14 | 1983-02-01 | The Johns Hopkins University | Current controlled bistable electrical organic thin film switching device |
| JPH0669109B2 (ja) * | 1984-12-07 | 1994-08-31 | シャ−プ株式会社 | 光半導体装置 |
| US5272359A (en) * | 1988-04-07 | 1993-12-21 | California Institute Of Technology | Reversible non-volatile switch based on a TCNQ charge transfer complex |
| JPH02215173A (ja) * | 1989-02-16 | 1990-08-28 | Canon Inc | スイッチング素子及びその作成方法 |
| JPH02216173A (ja) | 1989-02-17 | 1990-08-29 | Canon Inc | 画像形成装置のクリーニング装置 |
| US5311039A (en) * | 1990-04-24 | 1994-05-10 | Seiko Epson Corporation | PROM and ROM memory cells |
| US5177567A (en) * | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
| US5350484A (en) | 1992-09-08 | 1994-09-27 | Intel Corporation | Method for the anisotropic etching of metal films in the fabrication of interconnects |
| US5834824A (en) | 1994-02-08 | 1998-11-10 | Prolinx Labs Corporation | Use of conductive particles in a nonconductive body as an integrated circuit antifuse |
| US5514876A (en) * | 1994-04-15 | 1996-05-07 | Trw Inc. | Multi-terminal resonant tunneling transistor |
| DE69531477T2 (de) * | 1994-05-16 | 2004-07-15 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung aus halbleitendem, organischem material |
| US5424560A (en) * | 1994-05-31 | 1995-06-13 | Motorola, Inc. | Integrated multicolor organic led array |
| JP3683669B2 (ja) * | 1997-03-21 | 2005-08-17 | 株式会社リコー | 半導体発光素子 |
| US6344662B1 (en) * | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
| EP0968537B1 (en) * | 1997-08-22 | 2012-05-02 | Creator Technology B.V. | A method of manufacturing a field-effect transistor substantially consisting of organic materials |
| US6600185B1 (en) * | 1999-03-10 | 2003-07-29 | Oki Electric Industry Co., Ltd. | Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof |
| US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
| US6314019B1 (en) * | 1999-03-29 | 2001-11-06 | Hewlett-Packard Company | Molecular-wire crossbar interconnect (MWCI) for signal routing and communications |
| US6459095B1 (en) * | 1999-03-29 | 2002-10-01 | Hewlett-Packard Company | Chemically synthesized and assembled electronics devices |
| US6265243B1 (en) * | 1999-03-29 | 2001-07-24 | Lucent Technologies Inc. | Process for fabricating organic circuits |
| DE10001301A1 (de) | 2000-01-14 | 2001-07-19 | Opel Adam Ag | Gewindemutter |
| US6541309B2 (en) | 2001-03-21 | 2003-04-01 | Hewlett-Packard Development Company Lp | Fabricating a molecular electronic device having a protective barrier layer |
| US6458621B1 (en) * | 2001-08-01 | 2002-10-01 | Hewlett-Packard Company | Batch fabricated molecular electronic devices with cost-effective lithographic electrodes |
-
2001
- 2001-03-22 US US09/815,922 patent/US6707063B2/en not_active Expired - Lifetime
-
2002
- 2002-03-21 WO PCT/US2002/008934 patent/WO2002078056A2/en not_active Ceased
- 2002-03-21 KR KR10-2003-7012211A patent/KR20030085015A/ko not_active Ceased
- 2002-03-21 EP EP02713890A patent/EP1371063A2/en not_active Withdrawn
- 2002-03-21 JP JP2002575993A patent/JP2005509266A/ja active Pending
-
2003
- 2003-03-28 US US10/402,642 patent/US6835575B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100470831B1 (ko) * | 2002-05-20 | 2005-03-08 | 한국전자통신연구원 | 분자전자소자 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20020172064A1 (en) | 2002-11-21 |
| WO2002078056A3 (en) | 2003-02-13 |
| WO2002078056A2 (en) | 2002-10-03 |
| US6707063B2 (en) | 2004-03-16 |
| US20030186466A1 (en) | 2003-10-02 |
| JP2005509266A (ja) | 2005-04-07 |
| US6835575B2 (en) | 2004-12-28 |
| EP1371063A2 (en) | 2003-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20030919 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20070315 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20080313 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20080530 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20080313 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |