JP2005509266A - 分子電子デバイスを形成するための保護層 - Google Patents

分子電子デバイスを形成するための保護層 Download PDF

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Publication number
JP2005509266A
JP2005509266A JP2002575993A JP2002575993A JP2005509266A JP 2005509266 A JP2005509266 A JP 2005509266A JP 2002575993 A JP2002575993 A JP 2002575993A JP 2002575993 A JP2002575993 A JP 2002575993A JP 2005509266 A JP2005509266 A JP 2005509266A
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JP
Japan
Prior art keywords
layer
molecular
electronic device
region
protective layer
Prior art date
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Pending
Application number
JP2002575993A
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English (en)
Japanese (ja)
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JP2005509266A5 (enExample
Inventor
チェン、ヨン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2005509266A publication Critical patent/JP2005509266A/ja
Publication of JP2005509266A5 publication Critical patent/JP2005509266A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76823—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. transforming an insulating layer into a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002575993A 2001-03-22 2002-03-21 分子電子デバイスを形成するための保護層 Pending JP2005509266A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/815,922 US6707063B2 (en) 2001-03-22 2001-03-22 Passivation layer for molecular electronic device fabrication
PCT/US2002/008934 WO2002078056A2 (en) 2001-03-22 2002-03-21 Passivation layer for molecular electronic device fabrication

Publications (2)

Publication Number Publication Date
JP2005509266A true JP2005509266A (ja) 2005-04-07
JP2005509266A5 JP2005509266A5 (enExample) 2005-12-22

Family

ID=25219185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002575993A Pending JP2005509266A (ja) 2001-03-22 2002-03-21 分子電子デバイスを形成するための保護層

Country Status (5)

Country Link
US (2) US6707063B2 (enExample)
EP (1) EP1371063A2 (enExample)
JP (1) JP2005509266A (enExample)
KR (1) KR20030085015A (enExample)
WO (1) WO2002078056A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005521237A (ja) * 2001-06-28 2005-07-14 ヒューレット・パッカード・カンパニー インプリントによる分子電子回路の製造
JP2010506403A (ja) * 2006-10-03 2010-02-25 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 電気的に作動するスイッチ
US8431921B2 (en) 2009-01-13 2013-04-30 Hewlett-Packard Development Company, L.P. Memristor having a triangular shaped electrode

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KR100470831B1 (ko) * 2002-05-20 2005-03-08 한국전자통신연구원 분자전자소자 제조방법
US7195343B2 (en) * 2004-08-27 2007-03-27 Lexmark International, Inc. Low ejection energy micro-fluid ejection heads
US7242215B2 (en) * 2004-10-27 2007-07-10 Hewlett-Packard Development Company, L.P. Nanoscale latches and impedance-encoded logic for use in nanoscale state machines, nanoscale pipelines, and in other nanoscale electronic circuits
US7443711B1 (en) 2004-12-16 2008-10-28 Hewlett-Packard Development Company, L.P. Non-volatile programmable impedance nanoscale devices
US7741638B2 (en) * 2005-11-23 2010-06-22 Hewlett-Packard Development Company, L.P. Control layer for a nanoscale electronic switching device
US8183554B2 (en) * 2006-04-03 2012-05-22 Blaise Laurent Mouttet Symmetrical programmable memresistor crossbar structure
US20070233761A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Crossbar arithmetic processor
US20070231972A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Manufacture of programmable crossbar signal processor
US7576565B2 (en) * 2006-04-03 2009-08-18 Blaise Laurent Mouttet Crossbar waveform driver circuit
US7302513B2 (en) * 2006-04-03 2007-11-27 Blaise Laurent Mouttet Programmable crossbar signal processor
US9965251B2 (en) * 2006-04-03 2018-05-08 Blaise Laurent Mouttet Crossbar arithmetic and summation processor
US7763552B2 (en) * 2006-04-28 2010-07-27 Hewlett-Packard Development Company, L.P. Method of interconnect formation using focused beams
US8030754B2 (en) 2007-01-31 2011-10-04 Hewlett-Packard Development Company, L.P. Chip cooling channels formed in wafer bonding gap
WO2011010702A1 (ja) * 2009-07-22 2011-01-27 株式会社村田製作所 アンチヒューズ素子
TW201330282A (zh) * 2012-01-09 2013-07-16 隆達電子股份有限公司 齊納二極體結構及其製造方法
CN103730302B (zh) * 2012-10-10 2016-09-14 清华大学 场发射电子源及场发射装置
US12030081B2 (en) 2019-10-07 2024-07-09 The University Of Chicago Large lateral scale two-dimensional materials and other thin films, and associated systems and methods

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JPS5679449A (en) 1979-11-30 1981-06-30 Mitsubishi Electric Corp Production of semiconductor device
US4371883A (en) * 1980-03-14 1983-02-01 The Johns Hopkins University Current controlled bistable electrical organic thin film switching device
JPH0669109B2 (ja) * 1984-12-07 1994-08-31 シャ−プ株式会社 光半導体装置
US5272359A (en) * 1988-04-07 1993-12-21 California Institute Of Technology Reversible non-volatile switch based on a TCNQ charge transfer complex
JPH02215173A (ja) * 1989-02-16 1990-08-28 Canon Inc スイッチング素子及びその作成方法
JPH02216173A (ja) 1989-02-17 1990-08-29 Canon Inc 画像形成装置のクリーニング装置
US5311039A (en) * 1990-04-24 1994-05-10 Seiko Epson Corporation PROM and ROM memory cells
US5177567A (en) * 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5350484A (en) 1992-09-08 1994-09-27 Intel Corporation Method for the anisotropic etching of metal films in the fabrication of interconnects
US5834824A (en) 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
US5514876A (en) * 1994-04-15 1996-05-07 Trw Inc. Multi-terminal resonant tunneling transistor
DE69531477T2 (de) * 1994-05-16 2004-07-15 Koninklijke Philips Electronics N.V. Halbleiteranordnung aus halbleitendem, organischem material
US5424560A (en) * 1994-05-31 1995-06-13 Motorola, Inc. Integrated multicolor organic led array
JP3683669B2 (ja) * 1997-03-21 2005-08-17 株式会社リコー 半導体発光素子
US6344662B1 (en) * 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
EP0968537B1 (en) * 1997-08-22 2012-05-02 Creator Technology B.V. A method of manufacturing a field-effect transistor substantially consisting of organic materials
US6600185B1 (en) * 1999-03-10 2003-07-29 Oki Electric Industry Co., Ltd. Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6459095B1 (en) * 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices
US6265243B1 (en) * 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
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US6541309B2 (en) 2001-03-21 2003-04-01 Hewlett-Packard Development Company Lp Fabricating a molecular electronic device having a protective barrier layer
US6458621B1 (en) * 2001-08-01 2002-10-01 Hewlett-Packard Company Batch fabricated molecular electronic devices with cost-effective lithographic electrodes

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005521237A (ja) * 2001-06-28 2005-07-14 ヒューレット・パッカード・カンパニー インプリントによる分子電子回路の製造
JP2010506403A (ja) * 2006-10-03 2010-02-25 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 電気的に作動するスイッチ
US8766224B2 (en) 2006-10-03 2014-07-01 Hewlett-Packard Development Company, L.P. Electrically actuated switch
US9735355B2 (en) 2006-10-03 2017-08-15 Hewlett Packard Enterprise Development Lp Electrically actuated switch
US10374155B2 (en) 2006-10-03 2019-08-06 Hewlett Packard Enterprise Development Lp Electrically actuated switch
US11283012B2 (en) 2006-10-03 2022-03-22 Hewlett Packard Enterprise Development Lp Electrically actuated switch
US8431921B2 (en) 2009-01-13 2013-04-30 Hewlett-Packard Development Company, L.P. Memristor having a triangular shaped electrode

Also Published As

Publication number Publication date
US20020172064A1 (en) 2002-11-21
KR20030085015A (ko) 2003-11-01
WO2002078056A3 (en) 2003-02-13
WO2002078056A2 (en) 2002-10-03
US6707063B2 (en) 2004-03-16
US20030186466A1 (en) 2003-10-02
US6835575B2 (en) 2004-12-28
EP1371063A2 (en) 2003-12-17

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