JP2005327793A - 有機電界効果トランジスタおよびその製造方法 - Google Patents

有機電界効果トランジスタおよびその製造方法 Download PDF

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Publication number
JP2005327793A
JP2005327793A JP2004142320A JP2004142320A JP2005327793A JP 2005327793 A JP2005327793 A JP 2005327793A JP 2004142320 A JP2004142320 A JP 2004142320A JP 2004142320 A JP2004142320 A JP 2004142320A JP 2005327793 A JP2005327793 A JP 2005327793A
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JP
Japan
Prior art keywords
field effect
effect transistor
organic field
organic
buffer layer
Prior art date
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Pending
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JP2004142320A
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English (en)
Japanese (ja)
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JP2005327793A5 (enExample
Inventor
Ryuichi Yatsunami
竜一 八浪
Megumi Sakagami
恵 坂上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2004142320A priority Critical patent/JP2005327793A/ja
Priority to US11/127,178 priority patent/US7372070B2/en
Publication of JP2005327793A publication Critical patent/JP2005327793A/ja
Publication of JP2005327793A5 publication Critical patent/JP2005327793A5/ja
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2004142320A 2004-05-12 2004-05-12 有機電界効果トランジスタおよびその製造方法 Pending JP2005327793A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004142320A JP2005327793A (ja) 2004-05-12 2004-05-12 有機電界効果トランジスタおよびその製造方法
US11/127,178 US7372070B2 (en) 2004-05-12 2005-05-12 Organic field effect transistor and method of manufacturing the same

Applications Claiming Priority (1)

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JP2004142320A JP2005327793A (ja) 2004-05-12 2004-05-12 有機電界効果トランジスタおよびその製造方法

Publications (2)

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JP2005327793A true JP2005327793A (ja) 2005-11-24
JP2005327793A5 JP2005327793A5 (enExample) 2007-03-01

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JP2004142320A Pending JP2005327793A (ja) 2004-05-12 2004-05-12 有機電界効果トランジスタおよびその製造方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227442A (ja) * 2007-02-13 2008-09-25 Mitsubishi Electric Corp 薄膜トランジスタアレイ基板、その製造方法、及び表示装置
WO2009044614A1 (ja) * 2007-10-01 2009-04-09 Rohm Co., Ltd. 有機半導体装置
CN102790172A (zh) * 2011-05-19 2012-11-21 索尼公司 半导体元件和电子装置
GB2521138A (en) * 2013-12-10 2015-06-17 Plastic Logic Ltd Source / Drain Conductors for transistor Devices
CN111490161A (zh) * 2020-04-24 2020-08-04 电子科技大学 一种有机薄场效应晶体管及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003298056A (ja) * 2002-03-28 2003-10-17 National Institute Of Advanced Industrial & Technology 有機薄膜電界効果トランジスターおよびその製造方法
JP2004103905A (ja) * 2002-09-11 2004-04-02 Pioneer Electronic Corp 有機半導体素子
JP2005109028A (ja) * 2003-09-29 2005-04-21 Tdk Corp 有機電界効果トランジスタ及びその製造方法
JP2005203728A (ja) * 2003-08-19 2005-07-28 Seiko Epson Corp 電極、電極形成方法、薄膜トランジスタ、電子回路、有機エレクトロルミネッセンス素子、表示装置および電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003298056A (ja) * 2002-03-28 2003-10-17 National Institute Of Advanced Industrial & Technology 有機薄膜電界効果トランジスターおよびその製造方法
JP2004103905A (ja) * 2002-09-11 2004-04-02 Pioneer Electronic Corp 有機半導体素子
JP2005203728A (ja) * 2003-08-19 2005-07-28 Seiko Epson Corp 電極、電極形成方法、薄膜トランジスタ、電子回路、有機エレクトロルミネッセンス素子、表示装置および電子機器
JP2005109028A (ja) * 2003-09-29 2005-04-21 Tdk Corp 有機電界効果トランジスタ及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227442A (ja) * 2007-02-13 2008-09-25 Mitsubishi Electric Corp 薄膜トランジスタアレイ基板、その製造方法、及び表示装置
WO2009044614A1 (ja) * 2007-10-01 2009-04-09 Rohm Co., Ltd. 有機半導体装置
JPWO2009044614A1 (ja) * 2007-10-01 2011-02-03 ローム株式会社 有機半導体装置
CN102790172A (zh) * 2011-05-19 2012-11-21 索尼公司 半导体元件和电子装置
CN102790172B (zh) * 2011-05-19 2017-09-15 索尼公司 半导体元件和电子装置
GB2521138A (en) * 2013-12-10 2015-06-17 Plastic Logic Ltd Source / Drain Conductors for transistor Devices
GB2521138B (en) * 2013-12-10 2019-01-02 Flexenable Ltd Source/Drain Conductors for Transistor Devices
CN111490161A (zh) * 2020-04-24 2020-08-04 电子科技大学 一种有机薄场效应晶体管及其制备方法

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