JP2005303319A - 微細構造を改修するためのシステム - Google Patents
微細構造を改修するためのシステム Download PDFInfo
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- JP2005303319A JP2005303319A JP2005116316A JP2005116316A JP2005303319A JP 2005303319 A JP2005303319 A JP 2005303319A JP 2005116316 A JP2005116316 A JP 2005116316A JP 2005116316 A JP2005116316 A JP 2005116316A JP 2005303319 A JP2005303319 A JP 2005303319A
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- 239000004020 conductor Substances 0.000 claims abstract description 113
- 238000000034 method Methods 0.000 claims abstract description 106
- 239000003792 electrolyte Substances 0.000 claims abstract description 80
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000000151 deposition Methods 0.000 claims abstract description 47
- 229910052802 copper Inorganic materials 0.000 claims abstract description 44
- 239000010949 copper Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 43
- 239000002245 particle Substances 0.000 claims description 50
- 230000008021 deposition Effects 0.000 claims description 20
- 238000003487 electrochemical reaction Methods 0.000 claims description 16
- 238000010894 electron beam technology Methods 0.000 claims description 16
- 239000002608 ionic liquid Substances 0.000 claims description 10
- 238000010304 firing Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 10
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 abstract 1
- 229910001431 copper ion Inorganic materials 0.000 abstract 1
- 239000008151 electrolyte solution Substances 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 38
- 229910052751 metal Inorganic materials 0.000 description 36
- 239000002184 metal Substances 0.000 description 36
- 238000010586 diagram Methods 0.000 description 29
- 238000010884 ion-beam technique Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 15
- 238000012545 processing Methods 0.000 description 13
- 238000012986 modification Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000004070 electrodeposition Methods 0.000 description 7
- 239000000523 sample Substances 0.000 description 6
- 238000010349 cathodic reaction Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000011163 secondary particle Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000000866 electrolytic etching Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- MEAHOQPOZNHISZ-UHFFFAOYSA-M cesium;hydrogen sulfate Chemical compound [Cs+].OS([O-])(=O)=O MEAHOQPOZNHISZ-UHFFFAOYSA-M 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000010985 leather Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- ZONODCCBXBRQEZ-UHFFFAOYSA-N platinum tungsten Chemical compound [W].[Pt] ZONODCCBXBRQEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- -1 Fe (iron) Chemical class 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- SHEGNBCAYSUQEV-UHFFFAOYSA-N [Cu+].CC(C)=C(C)[SiH3] Chemical compound [Cu+].CC(C)=C(C)[SiH3] SHEGNBCAYSUQEV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000007735 ion beam assisted deposition Methods 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000006276 transfer reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
- C25D3/665—Electroplating: Baths therefor from melts from ionic liquids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
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- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
【解決手段】ビームを微視構造物に向かって発射して埋設された導体層116の領域112を露呈させる。銅線124が直流電流源122の陽極128と接続される。ドロップピペットなどを介して、電解質126の小滴が、加工されるべき特徴構造を含む領域に亘って堆積される。銅線である微細な導体124が前記電解質溶液中に浸積されて陽極として作動する。露呈された導体層116と電解質126に電圧を引加して電流が電気化学的セルを通じて流れ、その結果、電解質から、又は、陽極から銅イオンが取り除かれ、陰極表面、すなわち、導電層116上に銅が堆積される。最適な電流は、特定の用途についての実験を通じて容易に決定される。
【選択図】 図1
Description
本発明のいくつかの好適実施の形態は、「回路修正」の分野、すなわち、電析又は電気エッチングのような、異種電子電荷転移機構によって電気通路を加えたり取り除いたりして集積回路内の接続を変更するような分野で利用されている。特に、本発明は、粉砕して穴(via)を形成し、高アスペクト比の穴(via)を通して金属線を切断し、そして、導線を迅速に生成することにとって有効である。
荷電粒子ビーム802が集束イオンビームである場合、陽極化学反応を誘発する陽イオンを供給し、結果的に、ワークピースにおいて陰極反応となりワークピース上の堆積となる。イオンビームは二次電子を放出するが、これらはワークピースへの電流にも貢献することができる。荷電粒子ビーム802が電子ビームである場合、このビームは、ビームの動作状態に応じて、特に加速電圧に応じて、陰極反応又は陽極反応のいずれかを誘発することができる。電子ビームが陰極反応を誘発する場合、陽極反応とそれに続くエッチングがワークピースにおいて結果的に生じる。電子ビームが陽極反応を誘発する場合、陰極反応がワークピースにおいて生じ、結果的に堆積となる。
112、402…穴(via)
114…集積回路
116、404…導体層
118…ピン
120…カソード
126…電解質
122…電流源
128…陽極
124…ワイヤ
550,552…銅膜
554…ワークピース表面
700…真空チャンバ
702…荷電粒子ビームカラム
704…高圧電源
706…二次粒子検出器
802…荷電粒子ビーム
902…電子ビームカラム
904…電源
908…電子ビーム
910…粒子検出器
Claims (21)
- 微視構造物を変更する方法であって、
ビームを前記微視構造物に向かって発射して埋設された導体の領域を露呈させる工程と、
該露呈された導体の領域に対して電解質を局部的に塗布する工程と、
前記露呈された導体と前記電解質に電圧を引加して電気化学的反応によって材料を堆積するか、又は、導体から材料を取り除く工程とからなる方法。 - 前記露呈された導体と電解質に電圧を引加して電気化学的反応によって材料を堆積するか、又は、導体から材料を取り除く前記工程が、負電圧を導体に印加し、更に、陽電圧を電解質に印加してその電圧が電解質からの材料を導体上に堆積するようにする工程を含むことを特徴とする前記請求項1に記載の方法。
- 前記導体が銅からなり、該導体上に堆積された材料が銅であることを特徴とする前記請求項1に記載の方法。
- 前記ビームを前記微視構造物に向かって発射して埋設された導体の領域を露呈させる前記工程が、アクセス穴を開ける工程と、更に、導電材料の種層を前記アクセス穴の側面に堆積する工程とからなることを特徴とする前記請求項1に記載の方法。
- 堆積された若しくは取り除かれた材料が、Cu、W、Au、Pt、Pd、Ag、Ni、Cr、Al、Ta、Zn、Fe、Co、Re、又は合金からなることを特徴とする前記請求項1に記載の方法。
- 前記ビームを前記微視構造物に向かって発射して埋設された導体の領域を露呈させる前記工程が荷電粒子ビームをワークピース上の前記微視構造物に向かって発射する工程を有し、更に、
前記露呈された導体の領域に対して電解質を局部的に塗布する前記工程が、真空チャンバ内において電解質を塗布する工程を有することを特徴とする前記請求項1に記載の方法。 - 前記電解質がイオン液体であることを特徴とする前記請求項6に記載の方法。
- 前記荷電粒子ビームをワークピース上の前記微視構造物に向かって発射する工程が、低真空電子ビームシステムにおいて電子ビームを発射する工程を有し、
前記電解質が水溶性液体であることを特徴とする前記請求項6に記載の方法。 - 表面上に導体を堆積する方法であって、
荷電粒子ビームを絶縁体表面に向かって発射して第1の導体層を堆積する工程と、
電解質を通じて電流を流し前記第1の導体層の上に第2の導体層を電気化学的に堆積する工程とからなる方法。 - 前記荷電粒子ビームを絶縁体表面に向かって発射して第1の導体層を堆積する前記工程が、
前駆体ガスを絶縁体表面に向かって送り、ビーム誘発堆積によって前記第1の導体層を堆積する工程を有することを特徴とする前記請求項9に記載の方法。 - 更に、ビームを発射して絶縁層の下の導体を露呈することを特徴とする前記請求項9に記載の方法。
- 導体を堆積する方法であって、
ビームを発射して被覆材料を取り除いて被覆された導体を露呈させる工程と、
電解質を前記露呈された導体に塗布する工程と、
前記電解質と前記露呈された導体に電流を通して、導電材料を前記露呈された導体の上に堆積する工程とからなる方法。 - 前記導電材料が、50μΩ・cm未満の抵抗率を有する銅材料を含むことを特徴とする前記請求項12に記載の方法。
- 前記導電材料が、25μΩ・cm未満の抵抗率を有する銅材料を含むことを特徴とする前記請求項13に記載の方法。
- 更に、前記ビームを発射して被覆材料を取り除いて被覆された導体を露呈させる前記工程が、前記ビームを発射して被覆材料を取り除いて被覆された第2の導体を露呈させる工程を有することと、
前記電解質を前記露呈された導体に塗布する前記工程が、電解質を前記露呈された第2の導体に塗布すると共に、前記第1と第2の導体間の領域にも塗布する工程を有することと、
前記電解質と前記露呈された導体に電流を通して、前記導電材料を前記露呈された導体の上に堆積する前記工程が、前記電解質と前記露呈された第2の導体に電流を通して、導電材料を前記露呈された第2の導体の上に堆積する工程を有することを特徴とする前記請求項12に記載の方法。 - 更に、前記露呈された導体と前記露呈された第2の導体の間の領域上に導電材料を前もって堆積する工程を有し、
前記電解質を前記露呈された導体に塗布する前記工程が、電解質を前記導体材料の上に堆積する工程を有することと、
前記電解質に電流を流して第2の導電層を堆積させ、前記露呈された第1の導体と前記露呈された第2の導体を接続することを特徴とする前記請求項15に記載の方法。 - 前記電解質を塗布する工程が、低揮発性の電解質を塗布する工程を有し、
電解質を塗布する工程と電流を流す工程が、共に真空チャンバ内で行われることを特徴とする前記請求項12に記載の方法。 - 前記低揮発性の電解質がイオン水溶液からなることを特徴とする前記請求項17に記載の方法。
- ワークピース上の微小構造を改修するためのシステムであって、
前記ワークピースを内蔵する真空チャンバと、
荷電粒子ビームをワークピースに向けて発射する荷電粒子ビームカラムであって、真空チャンバ最大動作圧力を有するものと、
ワークピース全体ではなくワークピースの一部の上に電解質を塗布するための塗布器であって、前記電解質が真空チャンバ内の圧力が荷電粒子ビームの作動範囲内に残るような蒸気圧を有するものとからなるシステム。 - 前記真空チャンバ最大動作圧力が、10-4Torrであり、
前記電解質がイオン液体であることを特徴とする前記請求項19に記載のシステム。 - 前記荷電粒子ビームシステムが50Torrの真空チャンバ最大動作圧力を有する低真空ビームシステムであり、
前記電解質が水溶性液体であることを特徴とする前記請求項19に記載のシステム。
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US8163641B2 (en) | 2012-04-24 |
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JP5285833B2 (ja) | 2013-09-11 |
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US7674706B2 (en) | 2010-03-09 |
EP1610377A3 (en) | 2009-04-29 |
TW200608492A (en) | 2006-03-01 |
TWI493625B (zh) | 2015-07-21 |
KR20060092786A (ko) | 2006-08-23 |
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US20050227484A1 (en) | 2005-10-13 |
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