JP2005303150A5 - - Google Patents
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- Publication number
- JP2005303150A5 JP2005303150A5 JP2004119624A JP2004119624A JP2005303150A5 JP 2005303150 A5 JP2005303150 A5 JP 2005303150A5 JP 2004119624 A JP2004119624 A JP 2004119624A JP 2004119624 A JP2004119624 A JP 2004119624A JP 2005303150 A5 JP2005303150 A5 JP 2005303150A5
- Authority
- JP
- Japan
- Prior art keywords
- refractory metal
- gas
- film
- nitride film
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003870 refractory metal Substances 0.000 claims 22
- 239000004065 semiconductor Substances 0.000 claims 12
- 239000007789 gas Substances 0.000 claims 11
- 150000004767 nitrides Chemical class 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 238000005546 reactive sputtering Methods 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004119624A JP4583797B2 (ja) | 2004-04-14 | 2004-04-14 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004119624A JP4583797B2 (ja) | 2004-04-14 | 2004-04-14 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005303150A JP2005303150A (ja) | 2005-10-27 |
| JP2005303150A5 true JP2005303150A5 (enrdf_load_stackoverflow) | 2007-05-17 |
| JP4583797B2 JP4583797B2 (ja) | 2010-11-17 |
Family
ID=35334264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004119624A Expired - Fee Related JP4583797B2 (ja) | 2004-04-14 | 2004-04-14 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4583797B2 (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0524783D0 (en) * | 2005-12-05 | 2006-01-11 | Cambridge Display Tech Ltd | Cavity glass for light-emissive devices and a method of manufacturing the same |
| JP5259247B2 (ja) * | 2007-08-22 | 2013-08-07 | 富士フイルム株式会社 | 表示素子の封止方法およびガスバリアフィルムで封止された表示素子の製造方法 |
| JP4953166B2 (ja) * | 2007-11-29 | 2012-06-13 | カシオ計算機株式会社 | 表示パネルの製造方法 |
| JP5293322B2 (ja) * | 2009-03-24 | 2013-09-18 | 凸版印刷株式会社 | 有機ｅｌパネル及びその製造方法 |
| KR102010752B1 (ko) | 2009-12-04 | 2019-08-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| JP6617024B2 (ja) * | 2015-12-24 | 2019-12-04 | パイオニア株式会社 | 発光装置 |
| CN110326114B (zh) * | 2017-02-28 | 2022-04-22 | 夏普株式会社 | Tft基板、具备tft基板的扫描天线以及tft基板的制造方法 |
| CN107359126B (zh) | 2017-07-11 | 2020-03-10 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板和显示面板 |
| CN110729409B (zh) * | 2019-10-25 | 2020-12-29 | 吉林大学 | 一种有机光电器件封装薄膜及其制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3141656B2 (ja) * | 1993-11-01 | 2001-03-05 | 富士ゼロックス株式会社 | 薄膜半導体装置の製造方法 |
| JP2001223365A (ja) * | 2000-02-10 | 2001-08-17 | Fujitsu Ltd | 薄膜トランジスタ及びその製造方法 |
| JP4056765B2 (ja) * | 2001-02-28 | 2008-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4027740B2 (ja) * | 2001-07-16 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2004
- 2004-04-14 JP JP2004119624A patent/JP4583797B2/ja not_active Expired - Fee Related
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