JP2005303032A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2005303032A
JP2005303032A JP2004117629A JP2004117629A JP2005303032A JP 2005303032 A JP2005303032 A JP 2005303032A JP 2004117629 A JP2004117629 A JP 2004117629A JP 2004117629 A JP2004117629 A JP 2004117629A JP 2005303032 A JP2005303032 A JP 2005303032A
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JP
Japan
Prior art keywords
semiconductor layer
semiconductor
forming
insulating film
layer
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JP2004117629A
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Japanese (ja)
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JP2005303032A5 (enExample
Inventor
Kazuhiko Shimizu
和彦 清水
Takashi Sato
隆史 佐藤
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2004117629A priority Critical patent/JP2005303032A/ja
Publication of JP2005303032A publication Critical patent/JP2005303032A/ja
Publication of JP2005303032A5 publication Critical patent/JP2005303032A5/ja
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JP2004117629A 2004-04-13 2004-04-13 半導体装置の製造方法 Pending JP2005303032A (ja)

Priority Applications (1)

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JP2004117629A JP2005303032A (ja) 2004-04-13 2004-04-13 半導体装置の製造方法

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JP2004117629A JP2005303032A (ja) 2004-04-13 2004-04-13 半導体装置の製造方法

Publications (2)

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JP2005303032A true JP2005303032A (ja) 2005-10-27
JP2005303032A5 JP2005303032A5 (enExample) 2007-05-31

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JP2004117629A Pending JP2005303032A (ja) 2004-04-13 2004-04-13 半導体装置の製造方法

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012096010A1 (ja) * 2011-01-14 2012-07-19 三菱電機株式会社 半導体装置の製造方法
US8415765B2 (en) 2009-03-31 2013-04-09 Panasonic Corporation Semiconductor device including a guard ring or an inverted region
CN114300348A (zh) * 2021-12-31 2022-04-08 北海惠科半导体科技有限公司 掺杂半导体器件的制备方法及半导体器件
CN114300358A (zh) * 2021-12-31 2022-04-08 北海惠科半导体科技有限公司 二极管的制备方法及半导体器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168270A (ja) * 1985-01-18 1986-07-29 Nec Kansai Ltd 半導体装置の製造方法
JPH07106336A (ja) * 1993-10-08 1995-04-21 Rohm Co Ltd プレーナ型ダイオードの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168270A (ja) * 1985-01-18 1986-07-29 Nec Kansai Ltd 半導体装置の製造方法
JPH07106336A (ja) * 1993-10-08 1995-04-21 Rohm Co Ltd プレーナ型ダイオードの製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8415765B2 (en) 2009-03-31 2013-04-09 Panasonic Corporation Semiconductor device including a guard ring or an inverted region
US8822316B2 (en) 2009-03-31 2014-09-02 Panasonic Corporation Method for manufacturing semiconductor device including an inverted region formed by doping second conductive type impurities into diffusion region of a first conductive type
WO2012096010A1 (ja) * 2011-01-14 2012-07-19 三菱電機株式会社 半導体装置の製造方法
CN103299425A (zh) * 2011-01-14 2013-09-11 三菱电机株式会社 半导体装置的制造方法
JP5479616B2 (ja) * 2011-01-14 2014-04-23 三菱電機株式会社 半導体装置の製造方法
KR101439805B1 (ko) 2011-01-14 2014-09-11 미쓰비시덴키 가부시키가이샤 반도체 장치의 제조 방법
US9059086B2 (en) 2011-01-14 2015-06-16 Mitsubishi Electric Corporation Method of manufacturing semiconductor device
CN114300348A (zh) * 2021-12-31 2022-04-08 北海惠科半导体科技有限公司 掺杂半导体器件的制备方法及半导体器件
CN114300358A (zh) * 2021-12-31 2022-04-08 北海惠科半导体科技有限公司 二极管的制备方法及半导体器件
CN114300348B (zh) * 2021-12-31 2025-07-22 北海惠科半导体科技有限公司 掺杂半导体器件的制备方法及半导体器件
CN114300358B (zh) * 2021-12-31 2025-09-12 北海惠科半导体科技有限公司 二极管的制备方法及半导体器件

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