JP2005303032A5 - - Google Patents

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Publication number
JP2005303032A5
JP2005303032A5 JP2004117629A JP2004117629A JP2005303032A5 JP 2005303032 A5 JP2005303032 A5 JP 2005303032A5 JP 2004117629 A JP2004117629 A JP 2004117629A JP 2004117629 A JP2004117629 A JP 2004117629A JP 2005303032 A5 JP2005303032 A5 JP 2005303032A5
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor
semiconductor layer
forming
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004117629A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005303032A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004117629A priority Critical patent/JP2005303032A/ja
Priority claimed from JP2004117629A external-priority patent/JP2005303032A/ja
Publication of JP2005303032A publication Critical patent/JP2005303032A/ja
Publication of JP2005303032A5 publication Critical patent/JP2005303032A5/ja
Pending legal-status Critical Current

Links

JP2004117629A 2004-04-13 2004-04-13 半導体装置の製造方法 Pending JP2005303032A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004117629A JP2005303032A (ja) 2004-04-13 2004-04-13 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004117629A JP2005303032A (ja) 2004-04-13 2004-04-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2005303032A JP2005303032A (ja) 2005-10-27
JP2005303032A5 true JP2005303032A5 (enExample) 2007-05-31

Family

ID=35334169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004117629A Pending JP2005303032A (ja) 2004-04-13 2004-04-13 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2005303032A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8415765B2 (en) 2009-03-31 2013-04-09 Panasonic Corporation Semiconductor device including a guard ring or an inverted region
KR101439805B1 (ko) 2011-01-14 2014-09-11 미쓰비시덴키 가부시키가이샤 반도체 장치의 제조 방법
CN114300348B (zh) * 2021-12-31 2025-07-22 北海惠科半导体科技有限公司 掺杂半导体器件的制备方法及半导体器件
CN114300358B (zh) * 2021-12-31 2025-09-12 北海惠科半导体科技有限公司 二极管的制备方法及半导体器件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168270A (ja) * 1985-01-18 1986-07-29 Nec Kansai Ltd 半導体装置の製造方法
JP2879841B2 (ja) * 1993-10-08 1999-04-05 ローム株式会社 プレーナ型ダイオードの製造方法

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