JP2005302809A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2005302809A
JP2005302809A JP2004112910A JP2004112910A JP2005302809A JP 2005302809 A JP2005302809 A JP 2005302809A JP 2004112910 A JP2004112910 A JP 2004112910A JP 2004112910 A JP2004112910 A JP 2004112910A JP 2005302809 A JP2005302809 A JP 2005302809A
Authority
JP
Japan
Prior art keywords
circuit
power supply
supply voltage
voltage
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004112910A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005302809A5 (enExample
Inventor
Kazue Kanda
和重 神田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2004112910A priority Critical patent/JP2005302809A/ja
Priority to US10/998,949 priority patent/US20050229050A1/en
Publication of JP2005302809A publication Critical patent/JP2005302809A/ja
Publication of JP2005302809A5 publication Critical patent/JP2005302809A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/006—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation at wafer scale level, i.e. wafer scale integration [WSI]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/46—Test trigger logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2004112910A 2004-04-07 2004-04-07 半導体装置 Pending JP2005302809A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004112910A JP2005302809A (ja) 2004-04-07 2004-04-07 半導体装置
US10/998,949 US20050229050A1 (en) 2004-04-07 2004-11-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004112910A JP2005302809A (ja) 2004-04-07 2004-04-07 半導体装置

Publications (2)

Publication Number Publication Date
JP2005302809A true JP2005302809A (ja) 2005-10-27
JP2005302809A5 JP2005302809A5 (enExample) 2007-06-07

Family

ID=35061935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004112910A Pending JP2005302809A (ja) 2004-04-07 2004-04-07 半導体装置

Country Status (2)

Country Link
US (1) US20050229050A1 (enExample)
JP (1) JP2005302809A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158237A (ja) * 2005-12-08 2007-06-21 Elpida Memory Inc 積層型半導体装置
US7636263B2 (en) 2007-01-16 2009-12-22 Panasonic Corporation Semiconductor memory having function to determine semiconductor low current
WO2010090334A1 (ja) * 2009-02-09 2010-08-12 日本電気株式会社 電子回路、回路装置、試験システム、電子回路の制御方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7808253B2 (en) * 2005-12-02 2010-10-05 Semiconductor Energy Laboratory Co., Ltd. Test method of microstructure body and micromachine
JP2007172766A (ja) * 2005-12-22 2007-07-05 Matsushita Electric Ind Co Ltd 半導体リーク電流検出器とリーク電流測定方法および電圧トリミング機能付半導体リーク電流検出器とリファレンス電圧トリミング方法およびこれらの半導体集積回路
US8013579B2 (en) 2007-08-02 2011-09-06 Micron Technology, Inc. Voltage trimming
KR102567134B1 (ko) * 2018-10-01 2023-08-16 삼성전자주식회사 엑스선 조사량 측정 장치, 이를 포함하는 반도체 메모리 장치 및 반도체 메모리 장치의 테스트 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945445A (en) * 1988-09-29 1990-07-31 Gentron Corporation Current sense circuit
KR930008886B1 (ko) * 1991-08-19 1993-09-16 삼성전자 주식회사 전기적으로 프로그램 할 수 있는 내부전원 발생회로
US6577148B1 (en) * 1994-08-31 2003-06-10 Motorola, Inc. Apparatus, method, and wafer used for testing integrated circuits formed on a product wafer
US5727001A (en) * 1996-08-14 1998-03-10 Micron Technology, Inc. Circuit and method for testing an integrated circuit
US5929650A (en) * 1997-02-04 1999-07-27 Motorola, Inc. Method and apparatus for performing operative testing on an integrated circuit
JP3489958B2 (ja) * 1997-03-19 2004-01-26 富士通株式会社 不揮発性半導体記憶装置
JP3087839B2 (ja) * 1997-08-28 2000-09-11 日本電気株式会社 半導体装置、そのテスト方法
US5918107A (en) * 1998-04-13 1999-06-29 Micron Technology, Inc. Method and system for fabricating and testing assemblies containing wire bonded semiconductor dice
JP2000074986A (ja) * 1998-08-31 2000-03-14 Ando Electric Co Ltd デバイス試験装置
JP4071378B2 (ja) * 1998-11-17 2008-04-02 株式会社ルネサステクノロジ 半導体回路装置
US6348806B1 (en) * 1999-03-18 2002-02-19 Motorola, Inc. Method and apparatus for measuring gate leakage current in an integrated circuit
US6249126B1 (en) * 1999-06-23 2001-06-19 Tsun Huang Lin Capacity detecting circuit for a battery
KR100343283B1 (ko) * 1999-07-02 2002-07-15 윤종용 반도체 장치의 테스트 전원 공급 회로
JP2001083217A (ja) * 1999-09-16 2001-03-30 Oki Micro Design Co Ltd 集積回路
JP2002074996A (ja) * 2000-08-25 2002-03-15 Mitsubishi Electric Corp 半導体集積回路

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158237A (ja) * 2005-12-08 2007-06-21 Elpida Memory Inc 積層型半導体装置
US7636263B2 (en) 2007-01-16 2009-12-22 Panasonic Corporation Semiconductor memory having function to determine semiconductor low current
WO2010090334A1 (ja) * 2009-02-09 2010-08-12 日本電気株式会社 電子回路、回路装置、試験システム、電子回路の制御方法
JP5440512B2 (ja) * 2009-02-09 2014-03-12 日本電気株式会社 電子回路、回路装置、試験システム、電子回路の制御方法

Also Published As

Publication number Publication date
US20050229050A1 (en) 2005-10-13

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