JP2005298327A - トリクロロモノシランの製造方法 - Google Patents
トリクロロモノシランの製造方法 Download PDFInfo
- Publication number
- JP2005298327A JP2005298327A JP2005112132A JP2005112132A JP2005298327A JP 2005298327 A JP2005298327 A JP 2005298327A JP 2005112132 A JP2005112132 A JP 2005112132A JP 2005112132 A JP2005112132 A JP 2005112132A JP 2005298327 A JP2005298327 A JP 2005298327A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- dust
- silicon particles
- trichloromonosilane
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 22
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 22
- 239000002699 waste material Substances 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims description 27
- 238000009826 distribution Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 239000005052 trichlorosilane Substances 0.000 claims description 8
- 239000000428 dust Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000003786 synthesis reaction Methods 0.000 claims description 6
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical compound C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 14
- 239000011863 silicon-based powder Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 238000006887 Ullmann reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
- C01B33/10763—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/51—Particles with a specific particle size distribution
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
【解決手段】流動床反応器中で珪素粒子を塩化水素と反応することによりトリクロロモノシランを製造する方法において、珪素粒子として塊状珪素から決められた珪素粒を製造する際に廃物生成物として生じる珪素ダストを使用し、珪素ダストを直接反応器に導入することを特徴とする。
【選択図】なし
Description
市販されている珪素(鉄含量1.4質量%、アルミニウム0.2質量%、カルシウム0.015質量%)を一般的な方法を使用してブロック注入珪素の破砕、粉砕および篩い分けにより種々の珪素粒度分布を有する群に処理した。粒の組成を表1に示す(粒1〜3)。種々の珪素粒度分布を比較例として使用した。
米国特許第4092446号の図12に示される流動床反応器中で例を実施した。
例2に記載された経過を異なる珪素粉末を使用して実施した。粉末タイプ1〜4は廃物粉末である。粒1〜3は比較のために製造した粒である。この珪素粉末の最も大きい粒子は最大粒度<500μmを有した。
Claims (7)
- 流動床反応器中で珪素粒子を塩化水素と反応することによりトリクロロモノシランを製造する方法において、珪素粒子として塊状珪素から決められた珪素粒を製造する際に廃物生成物として生じる珪素ダストを使用し、珪素ダストを直接反応器に導入することを特徴とするトリクロロモノシランを製造する方法。
- 珪素ダストとして、メチルクロロシラン合成およびトリクロロシラン合成に使用するために特定の珪素粒分布を製造する際に生じる廃物ダストを使用する請求項1記載の方法。
- 80μmの最大粒度を有する珪素ダストを使用する請求項1または2記載の方法。
- 珪素ダストが、すべての珪素粒子の全部の数に対して10%の珪素粒子が少なくとも1.3μmであり、多くても8μmの大きさであり、すべての珪素粒子の全部の数に対して50%の珪素粒子が少なくとも9μmであり、多くても31μmの大きさであり、すべての珪素粒子の全部の数に対して90%の珪素粒子が少なくとも32μmであり、多くても78μmの大きさである粒度分布合計を有する請求項1記載の方法。
- 珪素ダストが最大粒度80μmを有し、すべての珪素粒子の全部の数に対して10%の珪素粒子が少なくとも1.3μmであり、多くても8μmの大きさであり、すべての珪素粒子の全部の数に対して50%の珪素粒子が少なくとも9μmであり、多くても31μmの大きさであり、すべての珪素粒子の全部の数に対して90%の珪素粒子が少なくとも32μmであり、多くても78μmの大きさである粒度分布合計を有することを特徴とする珪素ダスト。
- 流動床反応器中でトリクロロモノシランを製造するための、塊状珪素の破砕の際に廃物生成物として生じる珪素ダストの使用。
- 流動床反応器中でトリクロロモノシランを製造するための請求項4または5記載の珪素ダストの使用。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004017453A DE102004017453A1 (de) | 2004-04-08 | 2004-04-08 | Verfahren zur Herstellung von Trichlormonosilan |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005298327A true JP2005298327A (ja) | 2005-10-27 |
| JP4612456B2 JP4612456B2 (ja) | 2011-01-12 |
Family
ID=34934510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005112132A Expired - Fee Related JP4612456B2 (ja) | 2004-04-08 | 2005-04-08 | トリクロロモノシランの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8043591B2 (ja) |
| EP (1) | EP1586537B1 (ja) |
| JP (1) | JP4612456B2 (ja) |
| CN (1) | CN1680399B (ja) |
| AT (1) | ATE454356T1 (ja) |
| DE (2) | DE102004017453A1 (ja) |
| ES (1) | ES2338568T3 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008137870A (ja) * | 2006-12-05 | 2008-06-19 | Osaka Titanium Technologies Co Ltd | シリコン塩化物の製造方法 |
| WO2013073144A1 (ja) * | 2011-11-16 | 2013-05-23 | 国立大学法人山口大学 | 廃シリコンからのハロシランの製造方法 |
| KR20200144572A (ko) * | 2018-04-18 | 2020-12-29 | 와커 헤미 아게 | 클로로실란의 제조 방법 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4160930B2 (ja) * | 2004-05-19 | 2008-10-08 | シャープ株式会社 | ハロシランの製造方法、固形分の精製方法 |
| DE102006009954A1 (de) * | 2006-03-03 | 2007-09-06 | Wacker Chemie Ag | Wiederverwertung von hochsiedenden Verbindungen innerhalb eines Chlorsilanverbundes |
| BRPI0822390B1 (pt) * | 2008-04-17 | 2018-06-26 | Unimin Corporation | Pó ultrafino formado a partir de mineral ou material de rocha com distribuição de tamanho de partícula controlada para filmes térmicos ou revestimentos, e seu método de produção |
| US20100264362A1 (en) * | 2008-07-01 | 2010-10-21 | Yongchae Chee | Method of producing trichlorosilane (TCS) rich Chlorosilane product stably from a fluidized gas phase reactor (FBR) and the structure of the reactor |
| US9067338B2 (en) * | 2008-08-04 | 2015-06-30 | Semlux Technologies, Inc. | Method to convert waste silicon to high purity silicon |
| DE102009020143A1 (de) * | 2009-05-04 | 2010-11-11 | Pv Silicon Forschungs- Und Produktionsgesellschaft Mbh | Verfahren zur Aufbereitung von Sägeabfällen zur Rückgewinnung von Silizium für die Herstellung von Solarsilizium |
| DE102009046265A1 (de) * | 2009-10-30 | 2011-05-19 | Rheinisch-Westfälische Technische Hochschule Aachen | Verfahren zur Aufarbeitung von Sägerückständen aus der Produktion von Silizium-Wafern |
| DE102010044108A1 (de) | 2010-11-18 | 2012-05-24 | Evonik Degussa Gmbh | Herstellung von Chlorsilanen aus kleinstteiligem Reinstsilicium |
| EP3233732B8 (en) | 2014-12-19 | 2020-06-17 | DDP Specialty Electronic Materials US 9, LLC | Process for preparing monohydrogentrihalosilanes |
| EP3691995B1 (de) | 2017-10-05 | 2021-03-17 | Wacker Chemie AG | Verfahren zur herstellung von chlorsilanen unter verwendung eines katalysators ausgewählt aus der gruppe co, mo, w |
| CN109319790B (zh) * | 2018-11-09 | 2020-11-24 | 成都蜀菱科技发展有限公司 | 一种利用细硅粉生产氯硅烷的方法及氯硅烷产品 |
| WO2025190477A1 (de) | 2024-03-12 | 2025-09-18 | Wacker Chemie Ag | Verfahren zur trennung eines abgasgemischs |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5424832A (en) * | 1977-07-22 | 1979-02-24 | Wacker Chemie Gmbh | Reusing method of reaction residue containing elemental silicon |
| JPS63170210A (ja) * | 1987-01-09 | 1988-07-14 | Toa Nenryo Kogyo Kk | クロルシランの製造方法 |
| US5063040A (en) * | 1988-03-23 | 1991-11-05 | Huels Aktiengesellschaft | Method for increasing the yield of trichlorosilane in the fluidized-bed hydrochlorination of silicon |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2466412A (en) * | 1946-02-21 | 1949-04-05 | Gen Electric | Method of preparation of hydrocarbon-substituted halosilanes |
| GB945618A (en) | 1959-06-24 | 1964-01-02 | Pechiney Prod Chimiques Sa | An improved process for the industrial manufacture of trichlorosilane |
| US4092446A (en) * | 1974-07-31 | 1978-05-30 | Texas Instruments Incorporated | Process of refining impure silicon to produce purified electronic grade silicon |
| JPS5832011A (ja) | 1981-08-17 | 1983-02-24 | Nippon Aerojiru Kk | 珪素と塩化水素からトリクロルシランと四塩化珪素を製造する方法 |
| DE3236276A1 (de) * | 1982-09-30 | 1984-04-05 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Neuer werkstoff aus silicium und verfahren zu seiner herstellung |
| US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
| NO166032C (no) * | 1988-12-08 | 1991-05-22 | Elkem As | Fremgangsmaate ved fremstilling av triklormonosilan. |
| US5871705A (en) * | 1996-09-19 | 1999-02-16 | Tokuyama Corporation | Process for producing trichlorosilane |
| DE10044794A1 (de) * | 2000-09-11 | 2002-04-04 | Bayer Ag | Verfahren zur Herstellung von Trichlorsilan |
| DE10118483C1 (de) * | 2001-04-12 | 2002-04-18 | Wacker Chemie Gmbh | Staubrückführung bei der Direktsynthese von Chlor- und Methylchlorsilanen in Wirbelschicht |
-
2004
- 2004-04-08 DE DE102004017453A patent/DE102004017453A1/de not_active Withdrawn
-
2005
- 2005-03-24 ES ES05006549T patent/ES2338568T3/es not_active Expired - Lifetime
- 2005-03-24 AT AT05006549T patent/ATE454356T1/de not_active IP Right Cessation
- 2005-03-24 DE DE502005008807T patent/DE502005008807D1/de not_active Expired - Lifetime
- 2005-03-24 EP EP05006549A patent/EP1586537B1/de not_active Expired - Lifetime
- 2005-04-01 US US11/096,605 patent/US8043591B2/en not_active Expired - Fee Related
- 2005-04-08 JP JP2005112132A patent/JP4612456B2/ja not_active Expired - Fee Related
- 2005-04-08 CN CN200510065115XA patent/CN1680399B/zh not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5424832A (en) * | 1977-07-22 | 1979-02-24 | Wacker Chemie Gmbh | Reusing method of reaction residue containing elemental silicon |
| JPS63170210A (ja) * | 1987-01-09 | 1988-07-14 | Toa Nenryo Kogyo Kk | クロルシランの製造方法 |
| US5063040A (en) * | 1988-03-23 | 1991-11-05 | Huels Aktiengesellschaft | Method for increasing the yield of trichlorosilane in the fluidized-bed hydrochlorination of silicon |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008137870A (ja) * | 2006-12-05 | 2008-06-19 | Osaka Titanium Technologies Co Ltd | シリコン塩化物の製造方法 |
| WO2013073144A1 (ja) * | 2011-11-16 | 2013-05-23 | 国立大学法人山口大学 | 廃シリコンからのハロシランの製造方法 |
| JP2013103872A (ja) * | 2011-11-16 | 2013-05-30 | Yamaguchi Univ | 廃シリコンからのハロシランの製造方法 |
| KR20200144572A (ko) * | 2018-04-18 | 2020-12-29 | 와커 헤미 아게 | 클로로실란의 제조 방법 |
| JP2021521092A (ja) * | 2018-04-18 | 2021-08-26 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | クロロシランの製造方法 |
| JP7087109B2 (ja) | 2018-04-18 | 2022-06-20 | ワッカー ケミー アクチエンゲゼルシャフト | クロロシランの製造方法 |
| KR102528127B1 (ko) | 2018-04-18 | 2023-05-02 | 와커 헤미 아게 | 클로로실란의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050226803A1 (en) | 2005-10-13 |
| US8043591B2 (en) | 2011-10-25 |
| DE102004017453A1 (de) | 2005-10-27 |
| ES2338568T3 (es) | 2010-05-10 |
| JP4612456B2 (ja) | 2011-01-12 |
| ATE454356T1 (de) | 2010-01-15 |
| EP1586537B1 (de) | 2010-01-06 |
| CN1680399A (zh) | 2005-10-12 |
| DE502005008807D1 (de) | 2010-02-25 |
| EP1586537A1 (de) | 2005-10-19 |
| CN1680399B (zh) | 2010-04-28 |
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