JP2005276962A - 半導体装置用基板と半導体装置 - Google Patents
半導体装置用基板と半導体装置 Download PDFInfo
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- JP2005276962A JP2005276962A JP2004085969A JP2004085969A JP2005276962A JP 2005276962 A JP2005276962 A JP 2005276962A JP 2004085969 A JP2004085969 A JP 2004085969A JP 2004085969 A JP2004085969 A JP 2004085969A JP 2005276962 A JP2005276962 A JP 2005276962A
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- 239000000758 substrate Substances 0.000 title claims abstract description 104
- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 239000000463 material Substances 0.000 claims abstract description 57
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052802 copper Inorganic materials 0.000 claims abstract description 42
- 239000010949 copper Substances 0.000 claims abstract description 42
- 239000002131 composite material Substances 0.000 claims abstract description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 31
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 27
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 24
- 239000000956 alloy Substances 0.000 claims abstract description 24
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 23
- 239000010937 tungsten Substances 0.000 claims abstract description 23
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 17
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 16
- 239000011733 molybdenum Substances 0.000 claims abstract description 16
- 230000007547 defect Effects 0.000 claims description 16
- 230000003746 surface roughness Effects 0.000 claims description 16
- 230000006641 stabilisation Effects 0.000 abstract description 4
- 238000011105 stabilization Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 141
- 239000010410 layer Substances 0.000 description 99
- 239000011347 resin Substances 0.000 description 27
- 229920005989 resin Polymers 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 15
- 238000010292 electrical insulation Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000007747 plating Methods 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910000881 Cu alloy Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 229910001080 W alloy Inorganic materials 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 6
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 229910001182 Mo alloy Inorganic materials 0.000 description 5
- 239000001257 hydrogen Chemical group 0.000 description 5
- 229910052739 hydrogen Chemical group 0.000 description 5
- 230000008595 infiltration Effects 0.000 description 5
- 238000001764 infiltration Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 4
- 238000007664 blowing Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000010828 elution Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- BVWCRASTPPDAAK-UHFFFAOYSA-N [Mo].[W].[Cu] Chemical compound [Mo].[W].[Cu] BVWCRASTPPDAAK-UHFFFAOYSA-N 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229920005822 acrylic binder Polymers 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】 半導体装置用基板は、基材1と、この基材1の少なくとも一部の表面の上に形成された電気絶縁膜3とを備える。基材1は、銅とタングステンを含む合金、銅とモリブデンとを含む合金、銅とタングステンとモリブデンとを含む合金、アルミニウムと炭化シリコンを含む複合材料、および、シリコンと炭化シリコンとを含む複合材料からなる群より選ばれた1種の材料からなる。電気絶縁膜3は、ダイヤモンド・ライク・カーボン膜、酸化アルミニウム膜および酸化シリコン膜からなる群より選ばれた少なくとも1種の膜からなる複数層を含む。
【選択図】 図1
Description
Claims (9)
- 銅とタングステンを含む合金、銅とモリブデンとを含む合金、銅とタングステンとモリブデンとを含む合金、アルミニウムと炭化シリコンを含む複合材料、および、シリコンと炭化シリコンとを含む複合材料からなる群より選ばれた1種の材料からなる基材と、
前記基材の少なくとも一部の表面の上に形成された電気絶縁膜とを備え、
前記電気絶縁膜は、ダイヤモンド・ライク・カーボン膜、酸化アルミニウム膜および酸化シリコン膜からなる群より選ばれた少なくとも1種の膜からなる複数層を含む、半導体装置用基板。 - 前記電気絶縁膜の厚みは、前記基材の表面粗さ以上である、請求項1に記載の半導体装置用基板。
- 前記基材の表面粗さはRmaxで0.1μm以上20μm以下である、請求項2に記載の半導体装置用基板。
- 欠陥部の深さが前記電気絶縁膜の厚みの2/3以下である、請求項1から請求項3までのいずれか1項に記載の半導体装置用基板。
- 前記電気絶縁膜は、半導体素子が搭載される前記基材の表面の上に形成されている、請求項1から請求項4までのいずれか1項に記載の半導体装置用基板。
- 前記銅とタングステンを含む合金、銅とモリブデンとを含む合金、および、銅とタングステンとモリブデンとを含む合金は、銅を5質量%以上40質量%以下含む、請求項1から請求項5までのいずれか1項に記載の半導体装置用基板。
- 前記アルミニウムと炭化シリコンを含む複合材料は、アルミニウムを20質量%以上90質量%以下含む、請求項1から請求項5までのいずれか1項に記載の半導体装置用基板。
- 前記シリコンと炭化シリコンとを含む複合材料は、シリコンを10質量%以上35質量%以下含む、請求項1から請求項5までのいずれか1項に記載の半導体装置用基板。
- 銅とタングステンを含む合金、銅とモリブデンとを含む合金、銅とタングステンとモリブデンとを含む合金、アルミニウムと炭化シリコンを含む複合材料、および、シリコンと炭化シリコンとを含む複合材料からなる群より選ばれた1種の材料からなる基材と、
前記基材の少なくとも一部の表面の上に形成された電気絶縁膜と、
前記電気絶縁膜の上に接着された半導体素子とを備え、
前記電気絶縁膜は、ダイヤモンド・ライク・カーボン膜、酸化アルミニウム膜および酸化シリコン膜からなる群より選ばれた少なくとも1種の膜からなる複数層を含む、半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004085969A JP4382547B2 (ja) | 2004-03-24 | 2004-03-24 | 半導体装置用基板と半導体装置 |
PCT/JP2005/003846 WO2005091360A1 (ja) | 2004-03-24 | 2005-03-07 | 半導体装置用基板と半導体装置 |
EP05720118A EP1732128A4 (en) | 2004-03-24 | 2005-03-07 | SUBSTRATE FOR A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT |
US10/593,819 US7470982B2 (en) | 2004-03-24 | 2005-03-07 | Substrate for semiconductor device and semiconductor device |
Applications Claiming Priority (1)
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---|---|---|---|
JP2004085969A JP4382547B2 (ja) | 2004-03-24 | 2004-03-24 | 半導体装置用基板と半導体装置 |
Publications (3)
Publication Number | Publication Date |
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JP2005276962A true JP2005276962A (ja) | 2005-10-06 |
JP2005276962A5 JP2005276962A5 (ja) | 2007-01-11 |
JP4382547B2 JP4382547B2 (ja) | 2009-12-16 |
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JP2004085969A Expired - Fee Related JP4382547B2 (ja) | 2004-03-24 | 2004-03-24 | 半導体装置用基板と半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7470982B2 (ja) |
EP (1) | EP1732128A4 (ja) |
JP (1) | JP4382547B2 (ja) |
WO (1) | WO2005091360A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010013383A1 (ja) * | 2008-07-30 | 2010-02-04 | 株式会社アライドマテリアル | ヒートスプレッダおよびその製造方法 |
US20100051979A1 (en) * | 2008-08-27 | 2010-03-04 | Oki Data Corporation | Semiconductor device and optical print head |
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JP4913605B2 (ja) * | 2005-01-20 | 2012-04-11 | 株式会社アライドマテリアル | 半導体装置用部材の製造方法 |
WO2007141851A1 (ja) * | 2006-06-07 | 2007-12-13 | Fujitsu Limited | 半導体パッケージ及び電子装置 |
CN101496165B (zh) * | 2006-07-28 | 2011-01-19 | 京瓷株式会社 | 电子部件收容用封装件以及电子装置 |
WO2008081904A1 (ja) * | 2006-12-27 | 2008-07-10 | Hitachi Chemical Co., Ltd. | 凹版及びこれを用いた導体層パターン付き基材 |
WO2008142700A2 (en) * | 2007-05-24 | 2008-11-27 | Micro Components Ltd. | Interconnect substrates, methods and systems thereof |
JP4558012B2 (ja) * | 2007-07-05 | 2010-10-06 | 株式会社東芝 | 半導体パッケージ用放熱プレート及び半導体装置 |
TWI433615B (zh) * | 2012-04-12 | 2014-04-01 | Subtron Technology Co Ltd | 散熱基板及其製作方法 |
US9575523B2 (en) * | 2015-01-22 | 2017-02-21 | Microsoft Technology Licensing, Llc | Device sandwich structured composite housing |
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JPS5815241A (ja) | 1981-07-20 | 1983-01-28 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
JPS60128625A (ja) | 1983-12-15 | 1985-07-09 | Sumitomo Electric Ind Ltd | 半導体素子搭載用基板 |
JPS61194884A (ja) | 1985-02-25 | 1986-08-29 | Hitachi Ltd | 超電導素子集積回路 |
JP3493833B2 (ja) | 1995-10-09 | 2004-02-03 | 住友電気工業株式会社 | 半導体素子搭載用プラスチックパッケージおよびその製造方法 |
JP3814924B2 (ja) | 1997-04-03 | 2006-08-30 | 住友電気工業株式会社 | 半導体装置用基板 |
JP4304749B2 (ja) * | 1998-02-24 | 2009-07-29 | 住友電気工業株式会社 | 半導体装置用部材の製造方法 |
JP3436702B2 (ja) | 1998-12-07 | 2003-08-18 | 日本碍子株式会社 | 複合材料 |
JP2001118960A (ja) | 1999-10-15 | 2001-04-27 | Sentan Zairyo:Kk | 電気絶縁膜付炭素基金属複合材基板 |
WO2001069674A1 (fr) | 2000-03-15 | 2001-09-20 | Sumitomo Electric Industries, Ltd. | Substrat de semi-conducteur a base d'aluminium-carbure de silicium et procede de fabrication |
JP4206651B2 (ja) * | 2001-06-19 | 2009-01-14 | 三菱マテリアル株式会社 | ヒートシンク付回路基板 |
JP2004104074A (ja) * | 2002-07-17 | 2004-04-02 | Sumitomo Electric Ind Ltd | 半導体装置用部材 |
-
2004
- 2004-03-24 JP JP2004085969A patent/JP4382547B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-07 US US10/593,819 patent/US7470982B2/en not_active Expired - Fee Related
- 2005-03-07 WO PCT/JP2005/003846 patent/WO2005091360A1/ja not_active Application Discontinuation
- 2005-03-07 EP EP05720118A patent/EP1732128A4/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010013383A1 (ja) * | 2008-07-30 | 2010-02-04 | 株式会社アライドマテリアル | ヒートスプレッダおよびその製造方法 |
JP4435868B1 (ja) * | 2008-07-30 | 2010-03-24 | 株式会社アライドマテリアル | ヒートスプレッダおよびその製造方法 |
US20100051979A1 (en) * | 2008-08-27 | 2010-03-04 | Oki Data Corporation | Semiconductor device and optical print head |
US8748918B2 (en) * | 2008-08-27 | 2014-06-10 | Oki Data Corporation | Semiconductor device and optical print head |
Also Published As
Publication number | Publication date |
---|---|
US20070194440A1 (en) | 2007-08-23 |
EP1732128A4 (en) | 2009-11-04 |
EP1732128A1 (en) | 2006-12-13 |
US7470982B2 (en) | 2008-12-30 |
JP4382547B2 (ja) | 2009-12-16 |
WO2005091360A1 (ja) | 2005-09-29 |
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