JP2005260071A - 半導体記憶装置の製造方法 - Google Patents

半導体記憶装置の製造方法 Download PDF

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Publication number
JP2005260071A
JP2005260071A JP2004071081A JP2004071081A JP2005260071A JP 2005260071 A JP2005260071 A JP 2005260071A JP 2004071081 A JP2004071081 A JP 2004071081A JP 2004071081 A JP2004071081 A JP 2004071081A JP 2005260071 A JP2005260071 A JP 2005260071A
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JP
Japan
Prior art keywords
film
forming
insulating film
memory device
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004071081A
Other languages
English (en)
Japanese (ja)
Inventor
Kazuhiro Hata
和宏 秦
Shinichi Sato
眞一 里
Yukiharu Akiyama
幸春 秋山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2004071081A priority Critical patent/JP2005260071A/ja
Priority to KR1020050018328A priority patent/KR100647058B1/ko
Priority to TW094106696A priority patent/TW200601462A/zh
Priority to US11/077,233 priority patent/US7256085B2/en
Priority to CNA2005100547387A priority patent/CN1722411A/zh
Publication of JP2005260071A publication Critical patent/JP2005260071A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2004071081A 2004-03-12 2004-03-12 半導体記憶装置の製造方法 Pending JP2005260071A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004071081A JP2005260071A (ja) 2004-03-12 2004-03-12 半導体記憶装置の製造方法
KR1020050018328A KR100647058B1 (ko) 2004-03-12 2005-03-04 반도체 메모리 장치 및 그 제조 방법
TW094106696A TW200601462A (en) 2004-03-12 2005-03-04 Semiconductor memory device and manufacturing method thereof
US11/077,233 US7256085B2 (en) 2004-03-12 2005-03-11 Semiconductor memory device and manufacturing method thereof
CNA2005100547387A CN1722411A (zh) 2004-03-12 2005-03-11 半导体存储器件及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004071081A JP2005260071A (ja) 2004-03-12 2004-03-12 半導体記憶装置の製造方法

Publications (1)

Publication Number Publication Date
JP2005260071A true JP2005260071A (ja) 2005-09-22

Family

ID=34918562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004071081A Pending JP2005260071A (ja) 2004-03-12 2004-03-12 半導体記憶装置の製造方法

Country Status (5)

Country Link
US (1) US7256085B2 (zh)
JP (1) JP2005260071A (zh)
KR (1) KR100647058B1 (zh)
CN (1) CN1722411A (zh)
TW (1) TW200601462A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100752203B1 (ko) * 2005-07-11 2007-08-24 동부일렉트로닉스 주식회사 엔오알형 플래시 메모리 소자 및 그의 제조 방법
JP2007214530A (ja) * 2006-02-07 2007-08-23 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法
KR100833250B1 (ko) * 2006-12-08 2008-05-28 (주)실리콘화일 적층구조를 갖는 집적회로의 제조방법 및 그 집적회로
KR101626565B1 (ko) * 2008-10-31 2016-06-01 어플라이드 머티어리얼스, 인코포레이티드 Ｐ3ｉ 챔버에서 등각 도핑의 개선
CN103456611A (zh) * 2013-03-06 2013-12-18 深圳信息职业技术学院 提高锗材料n型掺杂载流子浓度的方法与应用
CN114784009B (zh) * 2022-06-20 2022-09-09 广州粤芯半导体技术有限公司 嵌入式闪存的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3147108B2 (ja) 1999-01-20 2001-03-19 日本電気株式会社 半導体記憶装置の製造方法
US6868015B2 (en) * 2000-09-20 2005-03-15 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with control gate spacer portions
US6563167B2 (en) * 2001-01-05 2003-05-13 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edges
US6917069B2 (en) * 2001-10-17 2005-07-12 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with buried bit-line and vertical word line transistor

Also Published As

Publication number Publication date
KR20060043429A (ko) 2006-05-15
KR100647058B1 (ko) 2006-11-23
US20050199946A1 (en) 2005-09-15
CN1722411A (zh) 2006-01-18
US7256085B2 (en) 2007-08-14
TW200601462A (en) 2006-01-01

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