JP2005252219A - 発光装置及び封止部材 - Google Patents

発光装置及び封止部材 Download PDF

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Publication number
JP2005252219A
JP2005252219A JP2004223889A JP2004223889A JP2005252219A JP 2005252219 A JP2005252219 A JP 2005252219A JP 2004223889 A JP2004223889 A JP 2004223889A JP 2004223889 A JP2004223889 A JP 2004223889A JP 2005252219 A JP2005252219 A JP 2005252219A
Authority
JP
Japan
Prior art keywords
light emitting
light
emitting element
filler
sealing member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004223889A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005252219A5 (enExample
Inventor
Yoshinobu Suehiro
好伸 末広
Hideaki Kato
英昭 加藤
Seiji Takano
清二 高野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2004223889A priority Critical patent/JP2005252219A/ja
Priority to US11/050,432 priority patent/US7304326B2/en
Publication of JP2005252219A publication Critical patent/JP2005252219A/ja
Publication of JP2005252219A5 publication Critical patent/JP2005252219A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Devices (AREA)
JP2004223889A 2004-02-06 2004-07-30 発光装置及び封止部材 Withdrawn JP2005252219A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004223889A JP2005252219A (ja) 2004-02-06 2004-07-30 発光装置及び封止部材
US11/050,432 US7304326B2 (en) 2004-02-06 2005-02-04 Light emitting device and sealing material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004031305 2004-02-06
JP2004223889A JP2005252219A (ja) 2004-02-06 2004-07-30 発光装置及び封止部材

Publications (2)

Publication Number Publication Date
JP2005252219A true JP2005252219A (ja) 2005-09-15
JP2005252219A5 JP2005252219A5 (enExample) 2006-11-02

Family

ID=34829457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004223889A Withdrawn JP2005252219A (ja) 2004-02-06 2004-07-30 発光装置及び封止部材

Country Status (2)

Country Link
US (1) US7304326B2 (enExample)
JP (1) JP2005252219A (enExample)

Cited By (14)

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JP2007294974A (ja) * 2006-04-25 2007-11-08 Samsung Electro Mech Co Ltd 発光ダイオードモジュール
JP2007311663A (ja) * 2006-05-19 2007-11-29 Sharp Corp 発光装置の製造方法、発光装置、および発光装置の製造装置
JP2008085356A (ja) * 2006-09-28 2008-04-10 Philips Lumileds Lightng Co Llc マウントするために半導体構造体を準備するプロセス
JP2008251664A (ja) * 2007-03-29 2008-10-16 Toshiba Lighting & Technology Corp 照明装置
JP2008304611A (ja) * 2007-06-06 2008-12-18 Fujikura Ltd 光送受信装置
JP2010521805A (ja) * 2007-03-12 2010-06-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 低熱膨張係数を有する化合物を含む照明システム
JP2010532929A (ja) * 2007-07-06 2010-10-14 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
WO2011111334A1 (ja) * 2010-03-11 2011-09-15 株式会社 東芝 発光装置
US8064833B2 (en) 2007-05-17 2011-11-22 Kabushiki Kaisha Toshiba Radio communication apparatus and method
JP2012103732A (ja) * 2012-02-13 2012-05-31 Fujikura Ltd 光送受信装置の製造方法
JP2012238633A (ja) * 2011-05-10 2012-12-06 Rohm Co Ltd Ｌｅｄモジュール
JP2013511836A (ja) * 2009-11-23 2013-04-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 波長変換半導体発光ダイオード
JP2018182308A (ja) * 2017-04-12 2018-11-15 聯京光電股▲ふん▼有限公司 光電子パッケージ
JP2019021768A (ja) * 2017-07-18 2019-02-07 株式会社デンソー 電子装置

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WO2006054228A2 (en) * 2004-11-18 2006-05-26 Koninklijke Philips Electronics N.V. Illuminator and method for producing such illuminator
US20060171152A1 (en) * 2005-01-20 2006-08-03 Toyoda Gosei Co., Ltd. Light emitting device and method of making the same
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US8076680B2 (en) * 2005-03-11 2011-12-13 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
JP2007027278A (ja) * 2005-07-13 2007-02-01 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
KR100731678B1 (ko) * 2006-05-08 2007-06-22 서울반도체 주식회사 칩형 발광 다이오드 패키지 및 그것을 갖는 발광 장치
TWI321857B (en) * 2006-07-21 2010-03-11 Epistar Corp A light emitting device
TWI418054B (zh) * 2006-08-08 2013-12-01 Ｌｇ電子股份有限公司 發光裝置封裝與製造此封裝之方法
KR100772113B1 (ko) * 2006-09-28 2007-11-01 주식회사 하이닉스반도체 입체 인쇄회로 기판
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US8704265B2 (en) * 2007-08-27 2014-04-22 Lg Electronics Inc. Light emitting device package and lighting apparatus using the same
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
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US8530990B2 (en) * 2009-07-20 2013-09-10 Sunpower Corporation Optoelectronic device with heat spreader unit
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JP5744386B2 (ja) * 2009-10-07 2015-07-08 日東電工株式会社 光半導体封止材
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CN102414851B (zh) * 2010-03-11 2016-06-22 松下知识产权经营株式会社 发光模块、光源装置、液晶显示装置和发光模块的制造方法
JP5515992B2 (ja) * 2010-04-07 2014-06-11 日亜化学工業株式会社 発光装置
JP5939977B2 (ja) * 2010-04-09 2016-06-29 ローム株式会社 Ｌｅｄモジュール
DE102010021791A1 (de) 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements und eines Verbunds
US8563849B2 (en) 2010-08-03 2013-10-22 Sunpower Corporation Diode and heat spreader for solar module
JP5049382B2 (ja) * 2010-12-21 2012-10-17 パナソニック株式会社 発光装置及びそれを用いた照明装置
US8697541B1 (en) * 2010-12-24 2014-04-15 Ananda H. Kumar Methods and structures for preparing single crystal silicon wafers for use as substrates for epitaxial growth of crack-free gallium nitride films and devices
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JP2007294974A (ja) * 2006-04-25 2007-11-08 Samsung Electro Mech Co Ltd 発光ダイオードモジュール
JP2007311663A (ja) * 2006-05-19 2007-11-29 Sharp Corp 発光装置の製造方法、発光装置、および発光装置の製造装置
JP2008085356A (ja) * 2006-09-28 2008-04-10 Philips Lumileds Lightng Co Llc マウントするために半導体構造体を準備するプロセス
US9899578B2 (en) 2006-09-28 2018-02-20 Lumileds Llc Process for preparing a semiconductor structure for mounting
JP2010521805A (ja) * 2007-03-12 2010-06-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 低熱膨張係数を有する化合物を含む照明システム
JP2008251664A (ja) * 2007-03-29 2008-10-16 Toshiba Lighting & Technology Corp 照明装置
US8064833B2 (en) 2007-05-17 2011-11-22 Kabushiki Kaisha Toshiba Radio communication apparatus and method
JP2008304611A (ja) * 2007-06-06 2008-12-18 Fujikura Ltd 光送受信装置
JP2010532929A (ja) * 2007-07-06 2010-10-14 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
US9368697B2 (en) 2007-07-06 2016-06-14 Lg Innotek Co., Ltd. Light emitting device package
US8890297B2 (en) 2007-07-06 2014-11-18 Lg Innotek Co., Ltd. Light emitting device package
US8610255B2 (en) 2007-07-06 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
JP2013511836A (ja) * 2009-11-23 2013-04-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 波長変換半導体発光ダイオード
JP5716010B2 (ja) * 2010-03-11 2015-05-13 株式会社東芝 発光装置
US8933475B2 (en) 2010-03-11 2015-01-13 Kabushiki Kaisha Toshiba Light emitting device
WO2011111334A1 (ja) * 2010-03-11 2011-09-15 株式会社 東芝 発光装置
JP2012238633A (ja) * 2011-05-10 2012-12-06 Rohm Co Ltd Ｌｅｄモジュール
JP2012103732A (ja) * 2012-02-13 2012-05-31 Fujikura Ltd 光送受信装置の製造方法
JP2018182308A (ja) * 2017-04-12 2018-11-15 聯京光電股▲ふん▼有限公司 光電子パッケージ
JP2019021768A (ja) * 2017-07-18 2019-02-07 株式会社デンソー 電子装置

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Publication number Publication date
US7304326B2 (en) 2007-12-04
US20050173708A1 (en) 2005-08-11

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