JP2007294974A - 発光ダイオードモジュール - Google Patents
発光ダイオードモジュール Download PDFInfo
- Publication number
- JP2007294974A JP2007294974A JP2007116028A JP2007116028A JP2007294974A JP 2007294974 A JP2007294974 A JP 2007294974A JP 2007116028 A JP2007116028 A JP 2007116028A JP 2007116028 A JP2007116028 A JP 2007116028A JP 2007294974 A JP2007294974 A JP 2007294974A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- layer
- emitting chip
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 45
- 238000009792 diffusion process Methods 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 description 74
- 230000000052 comparative effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48235—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】発光チップと、前記発光チップから放出された光を、前記光の波長より長波長の光へと変換させる蛍光物質を含む蛍光層と、前記発光チップ及び前記蛍光層の間に配置される、前記発光チップを保護するとともに前記発光チップ及び前記蛍光層から発生した熱を拡散させる一以上の中間層と、を備える発光ダイオードモジュールである。
【選択図】図2
Description
3 第1樹脂層、
4 蛍光層、
5 第2樹脂層、
6 ベース、
15 サブマウント、
20 発光チップ、
23 キャッピング層、
26 熱拡散層、
30 蛍光層、
35 パッケージハウジング、
35a コップ状の内面、
37 第1リードフレーム、
39 第2リードフレーム。
Claims (11)
- 発光チップと、
前記発光チップから放出された光を、前記光の波長より長波長の光へと変換させる蛍光物質を含む蛍光層と、
前記発光チップ及び前記蛍光層の間に配置される、前記発光チップを保護するとともに前記発光チップ及び前記蛍光層から発生した熱を拡散させる一以上の中間層と、
を備える、発光ダイオードモジュール。 - 前記中間層が、
前記発光チップ上に形成されて前記発光チップを保護するキャッピング層と、
前記キャッピング層及び前記蛍光層の間に配置されて、前記発光チップ及び前記蛍光層から発生した熱を拡散させる熱拡散層と、
からなる、請求項1に記載の発光ダイオードモジュール。 - 前記熱拡散層が、熱伝導性物質及び透光性物質の混合物からなる、請求項2に記載の発光ダイオードモジュール。
- 前記熱伝導性物質が、SiO2、Al2O3、AlN、ZnOから選択される1種以上である、請求項3に記載の発光ダイオードモジュール。
- 前記透光性物質が樹脂である、請求項3または4に記載の発光ダイオードモジュール。
- 前記熱拡散層が、樹脂及びSiO2を1:1の割合で混合した物質からなる、請求項2〜5のいずれか1項に記載の発光ダイオードモジュール。
- 前記キャッピング層が樹脂からなる、請求項2〜6のいずれか1項に記載の発光ダイオードモジュール。
- 前記キャッピング層は、熱伝導性物質及び透光性物質の混合物からなる、請求項2〜6のいずれか1項に記載の発光ダイオードモジュール。
- 前記熱伝導性物質が、SiO2、Al2O3、AlN、ZnOから選択される1種以上である、請求項8に記載の発光ダイオードモジュール。
- 前記透光性物質が樹脂である、請求項8または9に記載の発光ダイオードモジュール。
- 前記キャッピング層が、樹脂及びSiO2を1:1の割合で混合した物質からなる、請求項8〜10のいずれか1項に記載の発光ダイオードモジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0037218 | 2006-04-25 | ||
KR1020060037218A KR100764391B1 (ko) | 2006-04-25 | 2006-04-25 | 발광 다이오드 모듈 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007294974A true JP2007294974A (ja) | 2007-11-08 |
JP5130425B2 JP5130425B2 (ja) | 2013-01-30 |
Family
ID=38618644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007116028A Expired - Fee Related JP5130425B2 (ja) | 2006-04-25 | 2007-04-25 | 発光ダイオードモジュール |
Country Status (3)
Country | Link |
---|---|
US (1) | US7902563B2 (ja) |
JP (1) | JP5130425B2 (ja) |
KR (1) | KR100764391B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009066780A1 (ja) * | 2007-11-23 | 2009-05-28 | Yamaguchi Prefectural Government | 光合成抑制光源及びそれを用いた照明装置 |
JP2014041993A (ja) * | 2012-07-24 | 2014-03-06 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
JP2017028063A (ja) * | 2015-07-21 | 2017-02-02 | 京セラ株式会社 | 発光装置 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0801509D0 (en) * | 2008-01-28 | 2008-03-05 | Photonstar Led Ltd | Light emitting system with optically transparent thermally conductive element |
US8076833B2 (en) * | 2008-06-30 | 2011-12-13 | Bridgelux, Inc. | Methods and apparatuses for enhancing heat dissipation from a light emitting device |
US7988311B2 (en) * | 2008-06-30 | 2011-08-02 | Bridgelux, Inc. | Light emitting device having a phosphor layer |
US7855394B2 (en) * | 2009-06-18 | 2010-12-21 | Bridgelux, Inc. | LED array package covered with a highly thermal conductive plate |
JP2011040494A (ja) * | 2009-08-07 | 2011-02-24 | Koito Mfg Co Ltd | 発光モジュール |
US8878454B2 (en) | 2009-12-09 | 2014-11-04 | Tyco Electronics Corporation | Solid state lighting system |
US8210715B2 (en) * | 2009-12-09 | 2012-07-03 | Tyco Electronics Corporation | Socket assembly with a thermal management structure |
US8241044B2 (en) * | 2009-12-09 | 2012-08-14 | Tyco Electronics Corporation | LED socket assembly |
US8845130B2 (en) | 2009-12-09 | 2014-09-30 | Tyco Electronics Corporation | LED socket assembly |
US8235549B2 (en) * | 2009-12-09 | 2012-08-07 | Tyco Electronics Corporation | Solid state lighting assembly |
KR20110094996A (ko) * | 2010-02-18 | 2011-08-24 | 엘지이노텍 주식회사 | 발광소자 패키지, 그 제조방법 및 조명시스템 |
CN102339938A (zh) * | 2010-07-20 | 2012-02-01 | 隆达电子股份有限公司 | 发光二极管的封装结构 |
JP5733743B2 (ja) * | 2010-12-15 | 2015-06-10 | 日東電工株式会社 | 光半導体装置 |
US9423119B2 (en) | 2011-09-26 | 2016-08-23 | Ideal Industries, Inc. | Device for securing a source of LED light to a heat sink surface |
US9249955B2 (en) | 2011-09-26 | 2016-02-02 | Ideal Industries, Inc. | Device for securing a source of LED light to a heat sink surface |
US9429309B2 (en) | 2011-09-26 | 2016-08-30 | Ideal Industries, Inc. | Device for securing a source of LED light to a heat sink surface |
EP2777080B1 (en) * | 2011-11-08 | 2019-07-03 | LG Innotek Co., Ltd. | Light emitting device |
US8917010B2 (en) * | 2012-02-02 | 2014-12-23 | Citizen Electronics Co., Ltd. | Lighting device including phosphor layer and light-transmitting layer that is arranged in contact with the phosphor layer to release static charge to substrate |
US8568001B2 (en) | 2012-02-03 | 2013-10-29 | Tyco Electronics Corporation | LED socket assembly |
US20140209950A1 (en) * | 2013-01-31 | 2014-07-31 | Luxo-Led Co., Limited | Light emitting diode package module |
CN105093776B (zh) * | 2014-05-13 | 2020-08-25 | 深圳光峰科技股份有限公司 | 波长转换装置、光源系统及投影系统 |
Citations (3)
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JP2005252219A (ja) * | 2004-02-06 | 2005-09-15 | Toyoda Gosei Co Ltd | 発光装置及び封止部材 |
WO2005091386A1 (ja) * | 2004-03-24 | 2005-09-29 | Toshiba Lighting & Technology Corporation | 照明装置 |
JP2005311170A (ja) * | 2004-04-23 | 2005-11-04 | Stanley Electric Co Ltd | 半導体発光装置 |
Family Cites Families (12)
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US6294800B1 (en) * | 1998-02-06 | 2001-09-25 | General Electric Company | Phosphors for white light generation from UV emitting diodes |
JP2002050797A (ja) * | 2000-07-31 | 2002-02-15 | Toshiba Corp | 半導体励起蛍光体発光装置およびその製造方法 |
MY151065A (en) * | 2003-02-25 | 2014-03-31 | Kaneka Corp | Curing composition and method for preparing same, light-shielding paste, light-shielding resin and method for producing same, package for light-emitting diode, and semiconductor device |
US6835960B2 (en) * | 2003-03-03 | 2004-12-28 | Opto Tech Corporation | Light emitting diode package structure |
WO2004081140A1 (ja) * | 2003-03-13 | 2004-09-23 | Nichia Corporation | 発光膜、発光装置、発光膜の製造方法および発光装置の製造方法 |
KR101173320B1 (ko) * | 2003-10-15 | 2012-08-10 | 니치아 카가쿠 고교 가부시키가이샤 | 발광장치 |
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KR100622824B1 (ko) * | 2004-05-18 | 2006-09-14 | 엘지전자 주식회사 | 발광 다이오드의 패키지 및 그의 패키징 방법 |
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US20060171152A1 (en) * | 2005-01-20 | 2006-08-03 | Toyoda Gosei Co., Ltd. | Light emitting device and method of making the same |
WO2007002234A1 (en) * | 2005-06-23 | 2007-01-04 | Rensselaer Polytechnic Institute | Package design for producing white light with short-wavelength leds and down-conversion materials |
-
2006
- 2006-04-25 KR KR1020060037218A patent/KR100764391B1/ko not_active IP Right Cessation
- 2006-09-05 US US11/515,248 patent/US7902563B2/en not_active Expired - Fee Related
-
2007
- 2007-04-25 JP JP2007116028A patent/JP5130425B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005252219A (ja) * | 2004-02-06 | 2005-09-15 | Toyoda Gosei Co Ltd | 発光装置及び封止部材 |
WO2005091386A1 (ja) * | 2004-03-24 | 2005-09-29 | Toshiba Lighting & Technology Corporation | 照明装置 |
JP2005311170A (ja) * | 2004-04-23 | 2005-11-04 | Stanley Electric Co Ltd | 半導体発光装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009066780A1 (ja) * | 2007-11-23 | 2009-05-28 | Yamaguchi Prefectural Government | 光合成抑制光源及びそれを用いた照明装置 |
JP4670108B2 (ja) * | 2007-11-23 | 2011-04-13 | 地方独立行政法人山口県産業技術センター | 光合成抑制光源及びそれを用いた照明装置 |
JP2014041993A (ja) * | 2012-07-24 | 2014-03-06 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
JP2017028063A (ja) * | 2015-07-21 | 2017-02-02 | 京セラ株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
US20070246712A1 (en) | 2007-10-25 |
JP5130425B2 (ja) | 2013-01-30 |
US7902563B2 (en) | 2011-03-08 |
KR100764391B1 (ko) | 2007-10-05 |
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