JP2005203801A - 不揮発性メモリセルの浮遊ゲート上に電子をプログラムする改良された方法 - Google Patents

不揮発性メモリセルの浮遊ゲート上に電子をプログラムする改良された方法 Download PDF

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Publication number
JP2005203801A
JP2005203801A JP2005033614A JP2005033614A JP2005203801A JP 2005203801 A JP2005203801 A JP 2005203801A JP 2005033614 A JP2005033614 A JP 2005033614A JP 2005033614 A JP2005033614 A JP 2005033614A JP 2005203801 A JP2005203801 A JP 2005203801A
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JP
Japan
Prior art keywords
floating gate
region
oxide
semiconductor structure
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005033614A
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English (en)
Japanese (ja)
Inventor
Bing Yeh
イェー ビン
Sohrab Kianian
キアニアン ソーラブ
Yaw Wen Hu
ウェン フー ヤー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Storage Technology Inc
Original Assignee
Silicon Storage Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/757,830 external-priority patent/US6891220B2/en
Application filed by Silicon Storage Technology Inc filed Critical Silicon Storage Technology Inc
Publication of JP2005203801A publication Critical patent/JP2005203801A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7887—Programmable transistors with more than two possible different levels of programmation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2005033614A 2004-01-13 2005-01-13 不揮発性メモリセルの浮遊ゲート上に電子をプログラムする改良された方法 Pending JP2005203801A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/757,830 US6891220B2 (en) 2002-04-05 2004-01-13 Method of programming electrons onto a floating gate of a non-volatile memory cell

Publications (1)

Publication Number Publication Date
JP2005203801A true JP2005203801A (ja) 2005-07-28

Family

ID=34826429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005033614A Pending JP2005203801A (ja) 2004-01-13 2005-01-13 不揮発性メモリセルの浮遊ゲート上に電子をプログラムする改良された方法

Country Status (4)

Country Link
JP (1) JP2005203801A (ko)
KR (1) KR20050074336A (ko)
CN (1) CN1641861A (ko)
TW (1) TW200537696A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103903969A (zh) * 2012-12-26 2014-07-02 北京兆易创新科技股份有限公司 浮栅的制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104882472A (zh) * 2015-06-07 2015-09-02 上海华虹宏力半导体制造有限公司 一种用于提高写效率的分离栅闪存结构
US10141321B2 (en) * 2015-10-21 2018-11-27 Silicon Storage Technology, Inc. Method of forming flash memory with separate wordline and erase gates
CN113192838B (zh) * 2021-03-24 2024-02-02 上海华虹宏力半导体制造有限公司 闪存存储器的形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01291470A (ja) * 1988-05-18 1989-11-24 Mitsubishi Electric Corp 半導体装置
JP2000269365A (ja) * 1999-03-17 2000-09-29 Sanyo Electric Co Ltd 不揮発性半導体記憶装置とその製造方法
JP2002093927A (ja) * 2000-07-12 2002-03-29 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01291470A (ja) * 1988-05-18 1989-11-24 Mitsubishi Electric Corp 半導体装置
JP2000269365A (ja) * 1999-03-17 2000-09-29 Sanyo Electric Co Ltd 不揮発性半導体記憶装置とその製造方法
JP2002093927A (ja) * 2000-07-12 2002-03-29 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103903969A (zh) * 2012-12-26 2014-07-02 北京兆易创新科技股份有限公司 浮栅的制备方法
CN103903969B (zh) * 2012-12-26 2016-05-04 北京兆易创新科技股份有限公司 浮栅的制备方法

Also Published As

Publication number Publication date
CN1641861A (zh) 2005-07-20
TW200537696A (en) 2005-11-16
KR20050074336A (ko) 2005-07-18

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