JP2005203360A5 - - Google Patents

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Publication number
JP2005203360A5
JP2005203360A5 JP2004362467A JP2004362467A JP2005203360A5 JP 2005203360 A5 JP2005203360 A5 JP 2005203360A5 JP 2004362467 A JP2004362467 A JP 2004362467A JP 2004362467 A JP2004362467 A JP 2004362467A JP 2005203360 A5 JP2005203360 A5 JP 2005203360A5
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JP
Japan
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oxide semiconductor
metal oxide
atom
general formula
metal
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JP2004362467A
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Japanese (ja)
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JP4449731B2 (ja
JP2005203360A (ja
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Publication of JP2005203360A5 publication Critical patent/JP2005203360A5/ja
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JP2004362467A 2003-12-19 2004-12-15 処理金属酸化物半導体ペースト、そのペーストを用いた金属酸化物半導体電極の製造方法、およびセルの製造方法 Expired - Fee Related JP4449731B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004362467A JP4449731B2 (ja) 2003-12-19 2004-12-15 処理金属酸化物半導体ペースト、そのペーストを用いた金属酸化物半導体電極の製造方法、およびセルの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003421905 2003-12-19
JP2004362467A JP4449731B2 (ja) 2003-12-19 2004-12-15 処理金属酸化物半導体ペースト、そのペーストを用いた金属酸化物半導体電極の製造方法、およびセルの製造方法

Publications (3)

Publication Number Publication Date
JP2005203360A JP2005203360A (ja) 2005-07-28
JP2005203360A5 true JP2005203360A5 (zh) 2005-10-06
JP4449731B2 JP4449731B2 (ja) 2010-04-14

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JP2004362467A Expired - Fee Related JP4449731B2 (ja) 2003-12-19 2004-12-15 処理金属酸化物半導体ペースト、そのペーストを用いた金属酸化物半導体電極の製造方法、およびセルの製造方法

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JP (1) JP4449731B2 (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7226966B2 (en) 2001-08-03 2007-06-05 Nanogram Corporation Structures incorporating polymer-inorganic particle blends
US8568684B2 (en) 2000-10-17 2013-10-29 Nanogram Corporation Methods for synthesizing submicron doped silicon particles
JP4801899B2 (ja) * 2004-12-10 2011-10-26 学校法人桐蔭学園 塗膜形成用組成物、それを用いて得られる電極及び光電変換素子
JP4525583B2 (ja) * 2005-12-15 2010-08-18 東レ・ファインケミカル株式会社 酸化亜鉛分散ペーストの製造方法
JP5114846B2 (ja) * 2006-02-02 2013-01-09 東レ・ファインケミカル株式会社 酸化亜鉛分散ペーストの製造方法
WO2008085806A1 (en) * 2007-01-03 2008-07-17 Nanogram Corporation Nanoparticle inks based on silicon/germanium, doped particles, printing and processes for semiconductor applications
JP2008180998A (ja) * 2007-01-25 2008-08-07 Sony Corp エレクトロクロミック装置
KR101212436B1 (ko) 2007-03-07 2012-12-13 주식회사 엘지화학 전해질 적하장치 및 이를 이용한 전기변색 소자의 제조방법
JP4908275B2 (ja) * 2007-03-16 2012-04-04 宇部興産株式会社 酸化亜鉛微細結晶を接着した基板、およびその製造方法
JP5217581B2 (ja) * 2008-04-04 2013-06-19 コニカミノルタホールディングス株式会社 色素増感型太陽電池
JP5382763B2 (ja) * 2008-04-09 2014-01-08 独立行政法人産業技術総合研究所 半導体素子及びその製造方法と、該半導体素子を備えた電子デバイス
JP5508730B2 (ja) * 2009-02-02 2014-06-04 日立造船株式会社 透明電極上における光触媒膜の形成方法
GB0905082D0 (en) * 2009-03-26 2009-05-06 Univ Bangor Low temperature sintering of dye-sensitised solar cells
US8895962B2 (en) 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
JP2012066988A (ja) * 2010-09-27 2012-04-05 Sekisui Chem Co Ltd 多孔質酸化チタン構造体の製造方法
JP5870862B2 (ja) * 2012-06-29 2016-03-01 コニカミノルタ株式会社 光電変換素子、その製造方法およびそれを用いた太陽電池
CN104919012A (zh) 2013-05-24 2015-09-16 纳克公司 具有基于硅/锗的纳米颗料并且具有高粘度醇类溶剂的可印刷墨水
JP6167734B2 (ja) * 2013-07-31 2017-07-26 三菱ケミカル株式会社 電界発光素子、光電変換素子、太陽電池、及び電子デバイス
JP6275441B2 (ja) * 2013-09-30 2018-02-07 富士フイルム株式会社 半導体膜、酸化物微粒子分散液、半導体膜の製造方法、及び、薄膜トランジスタ
CN110040766B (zh) * 2019-04-02 2021-09-03 重庆大学 高抗湿性的纳米气敏材料的制备方法和气敏传感器

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