JP4449731B2 - 処理金属酸化物半導体ペースト、そのペーストを用いた金属酸化物半導体電極の製造方法、およびセルの製造方法 - Google Patents

処理金属酸化物半導体ペースト、そのペーストを用いた金属酸化物半導体電極の製造方法、およびセルの製造方法 Download PDF

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JP4449731B2
JP4449731B2 JP2004362467A JP2004362467A JP4449731B2 JP 4449731 B2 JP4449731 B2 JP 4449731B2 JP 2004362467 A JP2004362467 A JP 2004362467A JP 2004362467 A JP2004362467 A JP 2004362467A JP 4449731 B2 JP4449731 B2 JP 4449731B2
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metal oxide
group
oxide semiconductor
paste
metal
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JP2005203360A (ja
JP2005203360A5 (zh
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宗徳 安藤
弾生 八木
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Toyo Ink SC Holdings Co Ltd
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Toyo Ink SC Holdings Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Inorganic Compounds Of Heavy Metals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
JP2004362467A 2003-12-19 2004-12-15 処理金属酸化物半導体ペースト、そのペーストを用いた金属酸化物半導体電極の製造方法、およびセルの製造方法 Expired - Fee Related JP4449731B2 (ja)

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JP2004362467A JP4449731B2 (ja) 2003-12-19 2004-12-15 処理金属酸化物半導体ペースト、そのペーストを用いた金属酸化物半導体電極の製造方法、およびセルの製造方法

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JP2003421905 2003-12-19
JP2004362467A JP4449731B2 (ja) 2003-12-19 2004-12-15 処理金属酸化物半導体ペースト、そのペーストを用いた金属酸化物半導体電極の製造方法、およびセルの製造方法

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JP2005203360A JP2005203360A (ja) 2005-07-28
JP2005203360A5 JP2005203360A5 (zh) 2005-10-06
JP4449731B2 true JP4449731B2 (ja) 2010-04-14

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US8568684B2 (en) 2000-10-17 2013-10-29 Nanogram Corporation Methods for synthesizing submicron doped silicon particles
US7226966B2 (en) 2001-08-03 2007-06-05 Nanogram Corporation Structures incorporating polymer-inorganic particle blends
JP4801899B2 (ja) * 2004-12-10 2011-10-26 学校法人桐蔭学園 塗膜形成用組成物、それを用いて得られる電極及び光電変換素子
JP4525583B2 (ja) * 2005-12-15 2010-08-18 東レ・ファインケミカル株式会社 酸化亜鉛分散ペーストの製造方法
JP5114846B2 (ja) * 2006-02-02 2013-01-09 東レ・ファインケミカル株式会社 酸化亜鉛分散ペーストの製造方法
CN103333526A (zh) * 2007-01-03 2013-10-02 内诺格雷姆公司 基于硅/锗的纳米颗粒油墨、掺杂型颗粒、用于半导体应用的印刷和方法
JP2008180998A (ja) * 2007-01-25 2008-08-07 Sony Corp エレクトロクロミック装置
KR101212436B1 (ko) 2007-03-07 2012-12-13 주식회사 엘지화학 전해질 적하장치 및 이를 이용한 전기변색 소자의 제조방법
JP4908275B2 (ja) * 2007-03-16 2012-04-04 宇部興産株式会社 酸化亜鉛微細結晶を接着した基板、およびその製造方法
JP5217581B2 (ja) * 2008-04-04 2013-06-19 コニカミノルタホールディングス株式会社 色素増感型太陽電池
JP5382763B2 (ja) * 2008-04-09 2014-01-08 独立行政法人産業技術総合研究所 半導体素子及びその製造方法と、該半導体素子を備えた電子デバイス
JP5508730B2 (ja) * 2009-02-02 2014-06-04 日立造船株式会社 透明電極上における光触媒膜の形成方法
GB0905082D0 (en) * 2009-03-26 2009-05-06 Univ Bangor Low temperature sintering of dye-sensitised solar cells
US8895962B2 (en) 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
JP2012066988A (ja) * 2010-09-27 2012-04-05 Sekisui Chem Co Ltd 多孔質酸化チタン構造体の製造方法
JP5870862B2 (ja) * 2012-06-29 2016-03-01 コニカミノルタ株式会社 光電変換素子、その製造方法およびそれを用いた太陽電池
CN104919012A (zh) 2013-05-24 2015-09-16 纳克公司 具有基于硅/锗的纳米颗料并且具有高粘度醇类溶剂的可印刷墨水
JP6167734B2 (ja) * 2013-07-31 2017-07-26 三菱ケミカル株式会社 電界発光素子、光電変換素子、太陽電池、及び電子デバイス
JP6275441B2 (ja) * 2013-09-30 2018-02-07 富士フイルム株式会社 半導体膜、酸化物微粒子分散液、半導体膜の製造方法、及び、薄膜トランジスタ
CN110040766B (zh) * 2019-04-02 2021-09-03 重庆大学 高抗湿性的纳米气敏材料的制备方法和气敏传感器

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