JP2005183954A - 窪んだゲート電極の形成方法 - Google Patents
窪んだゲート電極の形成方法 Download PDFInfo
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- JP2005183954A JP2005183954A JP2004356520A JP2004356520A JP2005183954A JP 2005183954 A JP2005183954 A JP 2005183954A JP 2004356520 A JP2004356520 A JP 2004356520A JP 2004356520 A JP2004356520 A JP 2004356520A JP 2005183954 A JP2005183954 A JP 2005183954A
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- forming
- gate electrode
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- silicon film
- conductive silicon
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- 238000000034 method Methods 0.000 title claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 230000007261 regionalization Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 4
- -1 tungsten nitride Chemical class 0.000 claims description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】この発明の窪んだゲート電極の形成方法は、基板400を選択的にエッチングしてゲート電極形成領域にオープン部401を形成する工程と、該オープン部が形成された形状に沿ってゲート酸化膜402を形成する工程と、該ゲート酸化膜上に最終パターン形成後に残留する厚さ以上の高さに渓谷が形成されるように導電性シリコン膜403を形成する工程と、最終パターン形成後に残留する厚さが残るように前記導電性シリコン膜を平坦化して前記渓谷を除去する工程と、平坦化された前記導電性シリコン膜上に導電膜405を形成する工程と該導電膜と前記導電性シリコン膜及び前記ゲート酸化膜を選択的にエッチングして窪んだゲート電極を形成する工程を含んでなる。
【選択図】図2E
Description
この場合、オープン部401の深さが100nm〜200nmになるようにするのが好ましい。
Claims (8)
- 基板を選択的にエッチングしてゲート電極形成領域にオープン部を形成する工程と、
該オープン部が形成された形状に沿ってゲート酸化膜を形成する工程と、
該ゲート酸化膜上に最終パターン形成後残に留する厚さ以上の高さに渓谷が形成されるように、導電性シリコン膜を形成する工程と、
最終パターン形成後に残留する厚さが残るように、前記導電性シリコン膜を平坦化することによって、前記渓谷を除去する工程と、
平坦化された前記導電性シリコン膜上に導電膜を形成する工程と、
該導電膜と前記導電性シリコン膜及び前記ゲート酸化膜を選択的にエッチングして窪んだゲート電極を形成する工程と
を含んでなることを特徴とする窪んだゲート電極の形成方法。 - 請求項1に記載の窪んだゲート電極の形成方法において、
前記導電性シリコン膜を前記オープン部の深さの1.5倍ないし3倍の厚さに蒸着する
ことを特徴とする方法。 - 請求項2に記載の窪んだゲート電極の形成方法において、
前記オープン部を100nmないし200nmの深さに形成する
ことを特徴とする方法。 - 請求項1に記載の窪んだゲート電極の形成方法において、
前記導電性シリコン膜を形成する工程で、不純物がドープされた導電性シリコン膜を蒸着するか、不純物がドープされてないシリコン膜を蒸着した後不純物をドープするかして、導電性を有するようにする
ことを特徴とする方法。 - 請求項1に記載の窪んだゲート電極の形成方法において、
前記導電性シリコン膜は、ポリシリコン膜または非晶質シリコン膜を含む
ことを特徴とする方法。 - 請求項1に記載の窪んだゲート電極の形成方法において、
前記導電膜は、タングステン、タングステンシリサイド、タングステンナイトライドおよびチタンナイトライドのうちの何れかを含む
ことを特徴とする方法。 - 請求項1に記載の窪んだゲート電極の形成方法において、
前記導電性シリコン膜を平坦化する工程で、化学機械的研磨またはエッチバック工程を用いる
ことを特徴とする方法。 - 請求項1または請求項2または請求項4または請求項5に記載の窪んだゲート電極の形成方法において、
前記導電性シリコン膜を蒸着する工程で、低圧化学気相蒸着方式を用いる
ことを特徴とする方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030091113A KR100566303B1 (ko) | 2003-12-15 | 2003-12-15 | 리세스된 게이트 전극 형성 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005183954A true JP2005183954A (ja) | 2005-07-07 |
Family
ID=36584542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004356520A Pending JP2005183954A (ja) | 2003-12-15 | 2004-12-09 | 窪んだゲート電極の形成方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060128130A1 (ja) |
JP (1) | JP2005183954A (ja) |
KR (1) | KR100566303B1 (ja) |
CN (1) | CN100555575C (ja) |
TW (1) | TWI264766B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100625795B1 (ko) | 2005-08-25 | 2006-09-18 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 및 그 형성방법 |
JP2007081095A (ja) * | 2005-09-14 | 2007-03-29 | Elpida Memory Inc | 半導体装置の製造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100668851B1 (ko) | 2005-06-30 | 2007-01-16 | 주식회사 하이닉스반도체 | 모스펫 소자 제조방법 |
US7435673B2 (en) * | 2005-09-28 | 2008-10-14 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit devices having metal interconnect structures therein |
KR100689840B1 (ko) * | 2005-10-04 | 2007-03-08 | 삼성전자주식회사 | 리세스된 게이트 전극을 갖는 반도체소자 및 그의 제조방법 |
KR100697292B1 (ko) * | 2005-10-04 | 2007-03-20 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
KR100673109B1 (ko) * | 2005-11-17 | 2007-01-22 | 주식회사 하이닉스반도체 | 반도체소자의 리세스 게이트 형성방법 |
KR100702132B1 (ko) * | 2005-12-22 | 2007-03-30 | 주식회사 하이닉스반도체 | 화학기계적연마를 이용한 리세스 게이트 형성 방법 |
KR100869359B1 (ko) | 2006-09-28 | 2008-11-19 | 주식회사 하이닉스반도체 | 반도체 소자의 리세스 게이트 제조 방법 |
KR100780629B1 (ko) | 2006-11-15 | 2007-11-30 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체 소자의 제조 방법 |
KR100825796B1 (ko) | 2006-12-14 | 2008-04-28 | 삼성전자주식회사 | 매몰 게이트를 구비한 반도체 소자의 제조 방법 |
KR101128886B1 (ko) * | 2009-03-11 | 2012-03-26 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 및 그 형성방법 |
KR101886382B1 (ko) * | 2011-12-14 | 2018-08-09 | 삼성전자주식회사 | 정보 저장 소자 및 그 제조 방법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6855593B2 (en) * | 2002-07-11 | 2005-02-15 | International Rectifier Corporation | Trench Schottky barrier diode |
KR100498476B1 (ko) * | 2003-01-11 | 2005-07-01 | 삼성전자주식회사 | 리세스 채널 mosfet 및 그 제조방법 |
KR100471001B1 (ko) * | 2003-07-02 | 2005-03-14 | 삼성전자주식회사 | 리세스형 트랜지스터 및 그의 제조방법 |
-
2003
- 2003-12-15 KR KR1020030091113A patent/KR100566303B1/ko not_active IP Right Cessation
-
2004
- 2004-12-02 TW TW093137119A patent/TWI264766B/zh not_active IP Right Cessation
- 2004-12-02 US US11/003,755 patent/US20060128130A1/en not_active Abandoned
- 2004-12-09 JP JP2004356520A patent/JP2005183954A/ja active Pending
- 2004-12-15 CN CNB2004101012036A patent/CN100555575C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100625795B1 (ko) | 2005-08-25 | 2006-09-18 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 및 그 형성방법 |
JP2007081095A (ja) * | 2005-09-14 | 2007-03-29 | Elpida Memory Inc | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20050059488A (ko) | 2005-06-21 |
US20060128130A1 (en) | 2006-06-15 |
TW200520071A (en) | 2005-06-16 |
KR100566303B1 (ko) | 2006-03-30 |
CN1630040A (zh) | 2005-06-22 |
TWI264766B (en) | 2006-10-21 |
CN100555575C (zh) | 2009-10-28 |
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