JP2005183943A - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
JP2005183943A
JP2005183943A JP2004339608A JP2004339608A JP2005183943A JP 2005183943 A JP2005183943 A JP 2005183943A JP 2004339608 A JP2004339608 A JP 2004339608A JP 2004339608 A JP2004339608 A JP 2004339608A JP 2005183943 A JP2005183943 A JP 2005183943A
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JP
Japan
Prior art keywords
silicon carbide
carbide layer
semiconductor element
region
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004339608A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005183943A5 (OSRAM
Inventor
Masao Uchida
正雄 内田
Makoto Kitahata
真 北畠
Osamu Kusumoto
修 楠本
Masaya Yamashita
賢哉 山下
Kunimasa Takahashi
邦方 高橋
Ryoko Miyanaga
良子 宮永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2004339608A priority Critical patent/JP2005183943A/ja
Publication of JP2005183943A publication Critical patent/JP2005183943A/ja
Publication of JP2005183943A5 publication Critical patent/JP2005183943A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2004339608A 2003-11-25 2004-11-24 半導体素子 Pending JP2005183943A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004339608A JP2005183943A (ja) 2003-11-25 2004-11-24 半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003393320 2003-11-25
JP2004339608A JP2005183943A (ja) 2003-11-25 2004-11-24 半導体素子

Publications (2)

Publication Number Publication Date
JP2005183943A true JP2005183943A (ja) 2005-07-07
JP2005183943A5 JP2005183943A5 (OSRAM) 2005-11-04

Family

ID=34797149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004339608A Pending JP2005183943A (ja) 2003-11-25 2004-11-24 半導体素子

Country Status (1)

Country Link
JP (1) JP2005183943A (OSRAM)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080786A (ja) * 2008-09-26 2010-04-08 Toshiba Corp 半導体装置
US7745828B2 (en) 2007-01-11 2010-06-29 Samsung Electronics Co., Ltd. Organic light emitting device and manufacturing method thereof
WO2010110252A1 (ja) * 2009-03-27 2010-09-30 住友電気工業株式会社 Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
WO2010110253A1 (ja) * 2009-03-27 2010-09-30 住友電気工業株式会社 Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
WO2010116887A1 (ja) * 2009-04-10 2010-10-14 住友電気工業株式会社 絶縁ゲート型電界効果トランジスタ
WO2010116886A1 (ja) * 2009-04-10 2010-10-14 住友電気工業株式会社 絶縁ゲート型バイポーラトランジスタ
JP2012234908A (ja) * 2011-04-28 2012-11-29 Denso Corp 炭化珪素半導体装置
US9012923B2 (en) 2013-08-01 2015-04-21 Kabushiki Kaisha Toshiba Semiconductor device
JP2015099845A (ja) * 2013-11-19 2015-05-28 住友電気工業株式会社 半導体装置
JPWO2013145023A1 (ja) * 2012-03-30 2015-08-03 株式会社日立製作所 電界効果型炭化珪素トランジスタ
JP2016063122A (ja) * 2014-09-19 2016-04-25 株式会社東芝 半導体装置
JP2016149566A (ja) * 2014-08-29 2016-08-18 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2019176194A (ja) * 2019-07-22 2019-10-10 ローム株式会社 半導体装置
US10612160B2 (en) 2014-08-01 2020-04-07 Sumitomo Electric Industries, Ltd. Epitaxial wafer and method for manufacturing same
JP2021108380A (ja) * 2013-09-20 2021-07-29 モノリス セミコンダクター インコーポレイテッド 高電圧ｍｏｓｆｅｔデバイスおよび該デバイスを製造する方法

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745828B2 (en) 2007-01-11 2010-06-29 Samsung Electronics Co., Ltd. Organic light emitting device and manufacturing method thereof
US8796694B2 (en) 2008-09-26 2014-08-05 Kabushiki Kaisha Toshiba Semiconductor device
JP2010080786A (ja) * 2008-09-26 2010-04-08 Toshiba Corp 半導体装置
US8513673B2 (en) 2009-03-27 2013-08-20 Sumitomo Electric Industries, Ltd. MOSFET and method for manufacturing MOSFET
WO2010110252A1 (ja) * 2009-03-27 2010-09-30 住友電気工業株式会社 Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
WO2010110253A1 (ja) * 2009-03-27 2010-09-30 住友電気工業株式会社 Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
US8536583B2 (en) 2009-03-27 2013-09-17 Sumitomo Electric Industries, Ltd. MOSFET and method for manufacturing MOSFET
JPWO2010110253A1 (ja) * 2009-03-27 2012-09-27 住友電気工業株式会社 Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
JPWO2010110252A1 (ja) * 2009-03-27 2012-09-27 住友電気工業株式会社 Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
US8525187B2 (en) 2009-04-10 2013-09-03 Sumitomo Electric Industries, Ltd. Insulated gate bipolar transistor
US8502236B2 (en) 2009-04-10 2013-08-06 Sumitomo Electric Industries, Ltd. Insulated gate field effect transistor
EP2418680A4 (en) * 2009-04-10 2012-12-12 Sumitomo Electric Industries ISOLATED GRID BIPOLAR TRANSISTOR
WO2010116886A1 (ja) * 2009-04-10 2010-10-14 住友電気工業株式会社 絶縁ゲート型バイポーラトランジスタ
WO2010116887A1 (ja) * 2009-04-10 2010-10-14 住友電気工業株式会社 絶縁ゲート型電界効果トランジスタ
JP2012234908A (ja) * 2011-04-28 2012-11-29 Denso Corp 炭化珪素半導体装置
JPWO2013145023A1 (ja) * 2012-03-30 2015-08-03 株式会社日立製作所 電界効果型炭化珪素トランジスタ
US9012923B2 (en) 2013-08-01 2015-04-21 Kabushiki Kaisha Toshiba Semiconductor device
JP2021108380A (ja) * 2013-09-20 2021-07-29 モノリス セミコンダクター インコーポレイテッド 高電圧ｍｏｓｆｅｔデバイスおよび該デバイスを製造する方法
JP7179893B2 (ja) 2013-09-20 2022-11-29 モノリス セミコンダクター インコーポレイテッド 高電圧ｍｏｓｆｅｔデバイスおよび該デバイスを製造する方法
JP2015099845A (ja) * 2013-11-19 2015-05-28 住友電気工業株式会社 半導体装置
WO2015076020A1 (ja) * 2013-11-19 2015-05-28 住友電気工業株式会社 半導体装置
US9698220B2 (en) 2013-11-19 2017-07-04 Sumitomo Electric Industries, Ltd. Semiconductor device
US10612160B2 (en) 2014-08-01 2020-04-07 Sumitomo Electric Industries, Ltd. Epitaxial wafer and method for manufacturing same
JP2016149566A (ja) * 2014-08-29 2016-08-18 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2016063122A (ja) * 2014-09-19 2016-04-25 株式会社東芝 半導体装置
JP2019176194A (ja) * 2019-07-22 2019-10-10 ローム株式会社 半導体装置

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